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JPS5634227A - Switching driving circuit of bipolar transistor - Google Patents

Switching driving circuit of bipolar transistor

Info

Publication number
JPS5634227A
JPS5634227A JP10983979A JP10983979A JPS5634227A JP S5634227 A JPS5634227 A JP S5634227A JP 10983979 A JP10983979 A JP 10983979A JP 10983979 A JP10983979 A JP 10983979A JP S5634227 A JPS5634227 A JP S5634227A
Authority
JP
Japan
Prior art keywords
trq1
trq5
diodes
bases
turning
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10983979A
Other languages
Japanese (ja)
Inventor
Akio Tokuge
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Pioneer Corp
Original Assignee
Pioneer Electronic Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Pioneer Electronic Corp filed Critical Pioneer Electronic Corp
Priority to JP10983979A priority Critical patent/JPS5634227A/en
Publication of JPS5634227A publication Critical patent/JPS5634227A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/60—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being bipolar transistors
    • H03K17/66—Switching arrangements for passing the current in either direction at will; Switching arrangements for reversing the current at will
    • H03K17/665—Switching arrangements for passing the current in either direction at will; Switching arrangements for reversing the current at will connected to one load terminal only
    • H03K17/666—Switching arrangements for passing the current in either direction at will; Switching arrangements for reversing the current at will connected to one load terminal only the output circuit comprising more than one controlled bipolar transistor
    • H03K17/667—Switching arrangements for passing the current in either direction at will; Switching arrangements for reversing the current at will connected to one load terminal only the output circuit comprising more than one controlled bipolar transistor using complementary bipolar transistors

Landscapes

  • Electronic Switches (AREA)

Abstract

PURPOSE:To make a high-speed switching operation possible, by providing a means, which shunts a part of a current when the potential difference between the driving current output terminal and the collector of a transistor reaches a prescribed value, to make the operation for turning-on of the transistor nonsaturated. CONSTITUTION:Darlington-connected PNP bipolar transistors TrQ1, Q2 which perform push-pull drive of load RL and similar NPN bipolar TrQ3, Q4 are used, and currents from NPN and PNP TrQ5, Q6 with emitters connected commonly are supplied to bases of these TrQ1-Q4. Diodes D1 and D2 to supply the driving current are connected between output terminals of TrQ5, Q6 and bases of TrQ1-Q4, and further, diodes D3 and D4 are provided which shunt a part of the voltage when the potential difference between output terminals of TrQ5, Q6 and collectors of TrQ1- Q4 exceeds a prescribed value, and the operation for turning-on of TrQ1-Q4 is set to the nonsaturation state, so that a high-speed switching operation possible.
JP10983979A 1979-08-29 1979-08-29 Switching driving circuit of bipolar transistor Pending JPS5634227A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10983979A JPS5634227A (en) 1979-08-29 1979-08-29 Switching driving circuit of bipolar transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10983979A JPS5634227A (en) 1979-08-29 1979-08-29 Switching driving circuit of bipolar transistor

Publications (1)

Publication Number Publication Date
JPS5634227A true JPS5634227A (en) 1981-04-06

Family

ID=14520502

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10983979A Pending JPS5634227A (en) 1979-08-29 1979-08-29 Switching driving circuit of bipolar transistor

Country Status (1)

Country Link
JP (1) JPS5634227A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS606748A (en) * 1983-06-27 1985-01-14 Shin Etsu Chem Co Ltd Swimming and diving implements made of silicone rubber and part thereof
JPH0339360A (en) * 1989-07-07 1991-02-20 Shin Etsu Chem Co Ltd Curable liquid silicone rubber composition
US6690200B2 (en) * 2002-01-16 2004-02-10 Pixart Imagning Inc. Driving circuit for transmission lines

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS606748A (en) * 1983-06-27 1985-01-14 Shin Etsu Chem Co Ltd Swimming and diving implements made of silicone rubber and part thereof
JPS6138948B2 (en) * 1983-06-27 1986-09-01 Shinetsu Chem Ind Co
JPH0339360A (en) * 1989-07-07 1991-02-20 Shin Etsu Chem Co Ltd Curable liquid silicone rubber composition
US6690200B2 (en) * 2002-01-16 2004-02-10 Pixart Imagning Inc. Driving circuit for transmission lines

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