JPS5630771A - Manufacture of photoreceptor - Google Patents
Manufacture of photoreceptorInfo
- Publication number
- JPS5630771A JPS5630771A JP10635579A JP10635579A JPS5630771A JP S5630771 A JPS5630771 A JP S5630771A JP 10635579 A JP10635579 A JP 10635579A JP 10635579 A JP10635579 A JP 10635579A JP S5630771 A JPS5630771 A JP S5630771A
- Authority
- JP
- Japan
- Prior art keywords
- film
- electrode
- znse
- substrate
- upper electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 108091008695 photoreceptors Proteins 0.000 title abstract 2
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000000956 alloy Substances 0.000 abstract 3
- 229910045601 alloy Inorganic materials 0.000 abstract 3
- SBIBMFFZSBJNJF-UHFFFAOYSA-N selenium;zinc Chemical compound [Se]=[Zn] SBIBMFFZSBJNJF-UHFFFAOYSA-N 0.000 abstract 3
- 239000000758 substrate Substances 0.000 abstract 3
- 229910052793 cadmium Inorganic materials 0.000 abstract 2
- 239000011248 coating agent Substances 0.000 abstract 2
- 238000000576 coating method Methods 0.000 abstract 2
- 238000005530 etching Methods 0.000 abstract 2
- 229910052738 indium Inorganic materials 0.000 abstract 2
- 229910052714 tellurium Inorganic materials 0.000 abstract 2
- 229910052725 zinc Inorganic materials 0.000 abstract 2
- 229910004613 CdTe Inorganic materials 0.000 abstract 1
- UHYPYGJEEGLRJD-UHFFFAOYSA-N cadmium(2+);selenium(2-) Chemical compound [Se-2].[Cd+2] UHYPYGJEEGLRJD-UHFFFAOYSA-N 0.000 abstract 1
- 239000011521 glass Substances 0.000 abstract 1
- 238000010438 heat treatment Methods 0.000 abstract 1
- 239000002075 main ingredient Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
- H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
- H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
- H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
- H10F30/222—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PN heterojunction
Landscapes
- Light Receiving Elements (AREA)
Abstract
PURPOSE:To recover the increase of a dark current in a photoreceptor by forming an electrode on a substrate, coating ZnSe, ZnCd or the like thereon as a film, further coating an alloy film made of Zn, Cd, In, Te or the like thereon, etching it, heat treating it, and mounting an upper electrode thereon. CONSTITUTION:An electrode 2 is formed on a substrate 1 made of glass or the like, and the first film 3 made of ZnSe, ZnS, CdS, ZnTe, CdSe, ZnCd or the like is coated thereon. Then, an alloy film 4 of (ZnCdTe)(InTe) containing Zn, Cd, In, Te as main ingredients is coated thereon, unnecessary portion is physically or chemically etched and removed, is heat treated at 500-600 deg.C, and an upper electrode 5 is mounted on the film 4. Or, an electrode 2' is formed on an Si substrate 1', ZnSe film 3', CdTe film 4a', (ZnTe)(InTe) alloy film 4b' are laminated thereon, is similarly treated to the above, and an upper electrode 5' is then mounted thereon. The heat treatment is thus excuted after the etching in said manner, and the reduction in a light current can be consequently recovered.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10635579A JPS5630771A (en) | 1979-08-20 | 1979-08-20 | Manufacture of photoreceptor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10635579A JPS5630771A (en) | 1979-08-20 | 1979-08-20 | Manufacture of photoreceptor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5630771A true JPS5630771A (en) | 1981-03-27 |
Family
ID=14431450
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10635579A Pending JPS5630771A (en) | 1979-08-20 | 1979-08-20 | Manufacture of photoreceptor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5630771A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2002093654A1 (en) * | 2001-05-15 | 2002-11-21 | Acrorad Co.,Ltd. | Semiconductor radiation detecting element |
-
1979
- 1979-08-20 JP JP10635579A patent/JPS5630771A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2002093654A1 (en) * | 2001-05-15 | 2002-11-21 | Acrorad Co.,Ltd. | Semiconductor radiation detecting element |
| JP2002344000A (en) * | 2001-05-15 | 2002-11-29 | Acrorad Co Ltd | Semiconductor radiation detector |
| US6975012B2 (en) | 2001-05-15 | 2005-12-13 | Acrorad Co., Ltd. | Semiconductor radiation detector having voltage application means comprises InxCdyTez on CdTe semiconductor substrate |
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