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JPS56161647A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS56161647A
JPS56161647A JP6390380A JP6390380A JPS56161647A JP S56161647 A JPS56161647 A JP S56161647A JP 6390380 A JP6390380 A JP 6390380A JP 6390380 A JP6390380 A JP 6390380A JP S56161647 A JPS56161647 A JP S56161647A
Authority
JP
Japan
Prior art keywords
stem
copper
fiber
fixed
proof
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP6390380A
Other languages
Japanese (ja)
Inventor
Tasao Soga
Takuzo Ogawa
Tateo Tamamura
Akio Chiba
Seiki Shimizu
Keiichi Kuniya
Masao Funiyu
Hiroshi Kato
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP6390380A priority Critical patent/JPS56161647A/en
Publication of JPS56161647A publication Critical patent/JPS56161647A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/367—Cooling facilitated by shape of device
    • H01L23/3677—Wire-like or pin-like cooling fins or heat sinks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/2901—Shape
    • H01L2224/29011—Shape comprising apertures or cavities
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    • H01L2224/29075—Plural core members
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    • H01L2224/291—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
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    • H01L2224/29101—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
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    • H01L2224/481—Disposition
    • H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
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    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
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    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/4823—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a pin of the item
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    • H01L2224/484—Connecting portions
    • H01L2224/4847—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
    • H01L2224/48472—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond the other connecting portion not on the bonding area also being a wedge bond, i.e. wedge-to-wedge
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    • H01L2224/732—Location after the connecting process
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    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
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    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/838—Bonding techniques
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    • H01L2924/16152—Cap comprising a cavity for hosting the device, e.g. U-shaped cap

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Die Bonding (AREA)

Abstract

PURPOSE:To decrease the thermal resistance and improve the power cycle-proof of a high power transistor by a method wherein an element is fixed to a stem provided with, for example, copper-carbon fiber which is almost equivalent in the coefficient of thermal expansion and high in thermal conductivity as compared with the element, in the semiconductor device comprising a heat sink and the stem fixed with the heat sink. CONSTITUTION:For example, a substrate of the composite fiber of 50% copper and 50% carbon in the volume ratio is manufactured by plain weaving a fiber bundle 13 of the copper-plated carbon fiber or 7-8mum diameter and hot-pressing the fiber bundles superimposed by two sheets. The composite substrate can be made 2.0W/cm deg.C in the thermal conductivity and 3.5-4.0X10<-6>/ deg.C in the coefficient of thermal expansion. The composite substrate is silver-soldered to an iron stem to form the stem 11 after being Ni-plated. A chip of the power element is fixed by a highly-heated solder and covered with a cap 12 to be made the element. Thereby, the device can be constructed in the low thermal resistance and the power cycle- proof, and in addition, the cost is reduced.
JP6390380A 1980-05-16 1980-05-16 Semiconductor device Pending JPS56161647A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6390380A JPS56161647A (en) 1980-05-16 1980-05-16 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6390380A JPS56161647A (en) 1980-05-16 1980-05-16 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS56161647A true JPS56161647A (en) 1981-12-12

Family

ID=13242737

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6390380A Pending JPS56161647A (en) 1980-05-16 1980-05-16 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS56161647A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5089439A (en) * 1990-02-02 1992-02-18 Hughes Aircraft Company Process for attaching large area silicon-backed chips to gold-coated surfaces
US6933531B1 (en) 1999-12-24 2005-08-23 Ngk Insulators, Ltd. Heat sink material and method of manufacturing the heat sink material

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5089439A (en) * 1990-02-02 1992-02-18 Hughes Aircraft Company Process for attaching large area silicon-backed chips to gold-coated surfaces
US6933531B1 (en) 1999-12-24 2005-08-23 Ngk Insulators, Ltd. Heat sink material and method of manufacturing the heat sink material

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