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JPS56147146A - Photoetching method - Google Patents

Photoetching method

Info

Publication number
JPS56147146A
JPS56147146A JP5143280A JP5143280A JPS56147146A JP S56147146 A JPS56147146 A JP S56147146A JP 5143280 A JP5143280 A JP 5143280A JP 5143280 A JP5143280 A JP 5143280A JP S56147146 A JPS56147146 A JP S56147146A
Authority
JP
Japan
Prior art keywords
photoresist
light
exposure
etched
absorptance
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP5143280A
Other languages
Japanese (ja)
Inventor
Masao Kanazawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP5143280A priority Critical patent/JPS56147146A/en
Publication of JPS56147146A publication Critical patent/JPS56147146A/en
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G03F7/0226—Quinonediazides characterised by the non-macromolecular additives

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Manufacturing Of Printed Circuit Boards (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

PURPOSE:To avoid unfavorable influence resulting from reflected light emitted from the surface of a body to be etched in exposure and enhance the etching accuracy by adding a light absorbing substance to a photoresist to regulate the light or electromagnetic wave absorptance of the photoresist. CONSTITUTION:A coloring material such as auramine conc. is added to an ultraviolet sensitive photoresist such as a composition prepared by dispersing naphthoquinone azide in novolak type phenol resin. Photoetching is carried out using the resulting photoresist with regulated absorptance such as >= about 0.5 absorbance to ultraviolet rays for exposure. This method is especially effective when applied to the exposure of a resist on a body of Al or the like with high reflectance to be etched using monochromatic light such as light having 435nm wavelength from a mercury lamp.
JP5143280A 1980-04-18 1980-04-18 Photoetching method Pending JPS56147146A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5143280A JPS56147146A (en) 1980-04-18 1980-04-18 Photoetching method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5143280A JPS56147146A (en) 1980-04-18 1980-04-18 Photoetching method

Publications (1)

Publication Number Publication Date
JPS56147146A true JPS56147146A (en) 1981-11-14

Family

ID=12886762

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5143280A Pending JPS56147146A (en) 1980-04-18 1980-04-18 Photoetching method

Country Status (1)

Country Link
JP (1) JPS56147146A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4588671A (en) * 1981-12-21 1986-05-13 Institut Khimii Akademii Nauk Sssr Photo and electron resist with donor-acceptor complex and light sensitive compound
JPS62295044A (en) * 1986-06-16 1987-12-22 Tokyo Ohka Kogyo Co Ltd Positive type photosensitive composition
JPS6433544A (en) * 1987-07-29 1989-02-03 Fujitsu Ltd Pattern forming method

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5137562A (en) * 1974-09-26 1976-03-29 Sony Corp Karaainkyokusenkan no keikomenyakitsukeyokogakufuiruta
JPS5230428A (en) * 1975-09-03 1977-03-08 Hitachi Ltd Photoresist exposure method
JPS52130286A (en) * 1976-04-26 1977-11-01 Hitachi Ltd Negative type photo resist
JPS5536838A (en) * 1978-09-08 1980-03-14 Tokyo Ohka Kogyo Co Ltd Novel light absorber and photoresist composition containing this

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5137562A (en) * 1974-09-26 1976-03-29 Sony Corp Karaainkyokusenkan no keikomenyakitsukeyokogakufuiruta
JPS5230428A (en) * 1975-09-03 1977-03-08 Hitachi Ltd Photoresist exposure method
JPS52130286A (en) * 1976-04-26 1977-11-01 Hitachi Ltd Negative type photo resist
JPS5536838A (en) * 1978-09-08 1980-03-14 Tokyo Ohka Kogyo Co Ltd Novel light absorber and photoresist composition containing this

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4588671A (en) * 1981-12-21 1986-05-13 Institut Khimii Akademii Nauk Sssr Photo and electron resist with donor-acceptor complex and light sensitive compound
JPS62295044A (en) * 1986-06-16 1987-12-22 Tokyo Ohka Kogyo Co Ltd Positive type photosensitive composition
JPS6433544A (en) * 1987-07-29 1989-02-03 Fujitsu Ltd Pattern forming method

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