JPS57122530A - Photoetching method - Google Patents
Photoetching methodInfo
- Publication number
- JPS57122530A JPS57122530A JP846581A JP846581A JPS57122530A JP S57122530 A JPS57122530 A JP S57122530A JP 846581 A JP846581 A JP 846581A JP 846581 A JP846581 A JP 846581A JP S57122530 A JPS57122530 A JP S57122530A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- series
- substrate
- pattern
- etched
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 title 1
- 238000001259 photo etching Methods 0.000 title 1
- 239000000463 material Substances 0.000 abstract 4
- 239000000758 substrate Substances 0.000 abstract 3
- 239000011521 glass Substances 0.000 abstract 2
- 230000003449 preventive effect Effects 0.000 abstract 2
- 229910052709 silver Inorganic materials 0.000 abstract 2
- 239000004332 silver Substances 0.000 abstract 2
- RRHGJUQNOFWUDK-UHFFFAOYSA-N Isoprene Chemical class CC(=C)C=C RRHGJUQNOFWUDK-UHFFFAOYSA-N 0.000 abstract 1
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical class OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 abstract 1
- 238000005530 etching Methods 0.000 abstract 1
- 239000002245 particle Substances 0.000 abstract 1
- 229920002120 photoresistant polymer Polymers 0.000 abstract 1
- 239000011347 resin Substances 0.000 abstract 1
- 229920005989 resin Polymers 0.000 abstract 1
- 125000003748 selenium group Chemical class *[Se]* 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
- 229920002554 vinyl polymer Polymers 0.000 abstract 1
- -1 vinyl silicate series Chemical class 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Drying Of Semiconductors (AREA)
- Weting (AREA)
Abstract
PURPOSE:To obtain a highly accurate pattern by providing a preventive layer made of macromolecular resin material on a singing plate when forming and etching an inorganic photoresist material layer on a substrate, and forming the prescribed pattern from the substrate. CONSTITUTION:When a substrate 3 to be etched made of a semiconductor wafer 1 provided with a metallic layer 2 on the surface is etched, a preventive layer 21 made of an isoprene series, vinyl silicate series or carbolic acid series, which prevents a photo-doping and a reaction with an inorganic resist layer is formed on the surface of the layer 2. Thereafter, an inorganic resist material layer 7 made of a laminate of a selenium series glass material layer 5 and a layer 6 containing silver is covered on the overall surface, accelerated particle beam 8 is emitted in the prescribed pattern to produce a layer 9 doped with silver in the glass. An unexposed part is removed, and the layer 9 is used as a mask layer 10. Subsequently, the exposed layer 21 and then the exposed metallic layer 2 are sequentially etched and removed to obtain a desired metallic layer pattern 11.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP846581A JPS57122530A (en) | 1981-01-22 | 1981-01-22 | Photoetching method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP846581A JPS57122530A (en) | 1981-01-22 | 1981-01-22 | Photoetching method |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS57122530A true JPS57122530A (en) | 1982-07-30 |
Family
ID=11693875
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP846581A Pending JPS57122530A (en) | 1981-01-22 | 1981-01-22 | Photoetching method |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS57122530A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60117723A (en) * | 1983-11-30 | 1985-06-25 | Fujitsu Ltd | Forming method of fine pattern |
US6368939B1 (en) * | 1997-04-18 | 2002-04-09 | Nec Corporation | Multilevel interconnection structure having an air gap between interconnects |
-
1981
- 1981-01-22 JP JP846581A patent/JPS57122530A/en active Pending
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60117723A (en) * | 1983-11-30 | 1985-06-25 | Fujitsu Ltd | Forming method of fine pattern |
JPH0473291B2 (en) * | 1983-11-30 | 1992-11-20 | Fujitsu Ltd | |
US6368939B1 (en) * | 1997-04-18 | 2002-04-09 | Nec Corporation | Multilevel interconnection structure having an air gap between interconnects |
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