JPS55134956A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS55134956A JPS55134956A JP4330879A JP4330879A JPS55134956A JP S55134956 A JPS55134956 A JP S55134956A JP 4330879 A JP4330879 A JP 4330879A JP 4330879 A JP4330879 A JP 4330879A JP S55134956 A JPS55134956 A JP S55134956A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- emitter
- base
- buried
- sitl
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 230000003321 amplification Effects 0.000 abstract 2
- 238000003199 nucleic acid amplification method Methods 0.000 abstract 2
- 238000009792 diffusion process Methods 0.000 abstract 1
- 230000006698 induction Effects 0.000 abstract 1
- 238000002347 injection Methods 0.000 abstract 1
- 239000007924 injection Substances 0.000 abstract 1
- 230000003068 static effect Effects 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
- H10D89/211—Design considerations for internal polarisation
Landscapes
- Bipolar Transistors (AREA)
- Junction Field-Effect Transistors (AREA)
Abstract
PURPOSE:To improve base grounding current amplification rate of a static induction transistor logic semiconductor (SITL) by arranging buried layers in the lower part of the emitter and base of the pnp injector. CONSTITUTION:On a substrate 1, an n<-> epitaxial layer 2 is grown to an interrupted line 11. After buried layers are arranged by p diffusion, the epitaxial growth is resumed to complete the n<-> layer 2. An emitter layer 5 is formed above the buried layer 12, and a p-type gate 3 and a drain 4 are formed. Thus, the buried layer 6, forming a reflection surface, is permitted to block an unnecessary downward hole- injection from the emitter layer 5, so that the emitter injection-efficiency and base carrier transport-factor can be improved, and base grounding current amplification rate is increased. The SITL having a lateral pnp injector of this constitution, which can be highly efficiently charged with capacitance, can be effectively utilized for a watch IC or the like.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4330879A JPS55134956A (en) | 1979-04-10 | 1979-04-10 | Semiconductor device |
| DE19803013508 DE3013508A1 (en) | 1979-04-10 | 1980-04-08 | Static induction and lateral transistor chip - has high concn. impurity zones for main electrodes of transistors |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4330879A JPS55134956A (en) | 1979-04-10 | 1979-04-10 | Semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS55134956A true JPS55134956A (en) | 1980-10-21 |
Family
ID=12660160
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4330879A Pending JPS55134956A (en) | 1979-04-10 | 1979-04-10 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS55134956A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5358883A (en) * | 1992-02-03 | 1994-10-25 | Motorola, Inc. | Lateral bipolar transistor |
-
1979
- 1979-04-10 JP JP4330879A patent/JPS55134956A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5358883A (en) * | 1992-02-03 | 1994-10-25 | Motorola, Inc. | Lateral bipolar transistor |
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