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JPS5597473A - Target for sputtering - Google Patents

Target for sputtering

Info

Publication number
JPS5597473A
JPS5597473A JP509979A JP509979A JPS5597473A JP S5597473 A JPS5597473 A JP S5597473A JP 509979 A JP509979 A JP 509979A JP 509979 A JP509979 A JP 509979A JP S5597473 A JPS5597473 A JP S5597473A
Authority
JP
Japan
Prior art keywords
target
low
cathode body
melting
cathode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP509979A
Other languages
Japanese (ja)
Other versions
JPS6358912B2 (en
Inventor
Koji Nishiyama
Takeshi Nakamura
Suehiro Kato
Kenji Ando
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Murata Manufacturing Co Ltd
Original Assignee
Murata Manufacturing Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Murata Manufacturing Co Ltd filed Critical Murata Manufacturing Co Ltd
Priority to JP509979A priority Critical patent/JPS5597473A/en
Publication of JPS5597473A publication Critical patent/JPS5597473A/en
Publication of JPS6358912B2 publication Critical patent/JPS6358912B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

PURPOSE:To prevent the thermal fracture of target due to the rise of film-forming speed, etc., by interposing a low-melting Pb-Sn alloy layer between cathode and target. CONSTITUTION:A low-melting Pb-Sn alloy containing one or more of Zn, Sb, Al, Ti, Si, Cu, and Cd is rubbed on the surface of the cathode body 11, and also the low-melting alloy is rubbed on the surface of the target 17 of ceramic, glass, synthetic resin, etc. Then, the low-melting alloy layers 18 on the cathode body 11 side and the target 17 side are adhered to each other by heating and compression and then solidified by cooling to fix the target 17 to the cathode body 11. Thus, the thermal conductivity of the cathode body 11 and the target 17 is raised and the difference in thermal expansion between both is absorbed by the low-melting alloy layer 18, the thermal fracture of the target can be prevented even in case where high-frequency power is applied to the cathode body 11.
JP509979A 1979-01-18 1979-01-18 Target for sputtering Granted JPS5597473A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP509979A JPS5597473A (en) 1979-01-18 1979-01-18 Target for sputtering

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP509979A JPS5597473A (en) 1979-01-18 1979-01-18 Target for sputtering

Publications (2)

Publication Number Publication Date
JPS5597473A true JPS5597473A (en) 1980-07-24
JPS6358912B2 JPS6358912B2 (en) 1988-11-17

Family

ID=11601923

Family Applications (1)

Application Number Title Priority Date Filing Date
JP509979A Granted JPS5597473A (en) 1979-01-18 1979-01-18 Target for sputtering

Country Status (1)

Country Link
JP (1) JPS5597473A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57145981A (en) * 1981-03-03 1982-09-09 Toshiba Corp Target for sputtering device
JPS63121662A (en) * 1987-10-14 1988-05-25 Hitachi Metals Ltd Target for sputtering

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0341615U (en) * 1989-08-30 1991-04-19

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57145981A (en) * 1981-03-03 1982-09-09 Toshiba Corp Target for sputtering device
JPH0215631B2 (en) * 1981-03-03 1990-04-12 Tokyo Shibaura Electric Co
JPS63121662A (en) * 1987-10-14 1988-05-25 Hitachi Metals Ltd Target for sputtering

Also Published As

Publication number Publication date
JPS6358912B2 (en) 1988-11-17

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