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JPS559438A - Method of manufacturing semiconductor device - Google Patents

Method of manufacturing semiconductor device

Info

Publication number
JPS559438A
JPS559438A JP8219078A JP8219078A JPS559438A JP S559438 A JPS559438 A JP S559438A JP 8219078 A JP8219078 A JP 8219078A JP 8219078 A JP8219078 A JP 8219078A JP S559438 A JPS559438 A JP S559438A
Authority
JP
Japan
Prior art keywords
semiconductor device
manufacturing semiconductor
elements
grooves
semiconductor wafer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP8219078A
Other languages
Japanese (ja)
Other versions
JPS5847855B2 (en
Inventor
Hiroshi Asami
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Home Electronics Ltd
NEC Corp
Original Assignee
NEC Home Electronics Ltd
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Home Electronics Ltd, Nippon Electric Co Ltd filed Critical NEC Home Electronics Ltd
Priority to JP53082190A priority Critical patent/JPS5847855B2/en
Publication of JPS559438A publication Critical patent/JPS559438A/en
Publication of JPS5847855B2 publication Critical patent/JPS5847855B2/en
Expired legal-status Critical Current

Links

Landscapes

  • Dicing (AREA)

Abstract

PURPOSE: To make many elements from a semiconductor wafer without cracking.
CONSTITUTION: A semiconductor wafer 11 is sticked on a vinyl sheet 13 and grooves 14 with remaining thickness t=5W30μ are made between semiconductor elements 12 by dicing. Next, pull the sheet 13 laterally, and the bases of the grooves 14 are cut and the elements are separated apart by dimensions L.
COPYRIGHT: (C)1980,JPO&Japio
JP53082190A 1978-07-05 1978-07-05 Manufacturing method of semiconductor device Expired JPS5847855B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP53082190A JPS5847855B2 (en) 1978-07-05 1978-07-05 Manufacturing method of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP53082190A JPS5847855B2 (en) 1978-07-05 1978-07-05 Manufacturing method of semiconductor device

Publications (2)

Publication Number Publication Date
JPS559438A true JPS559438A (en) 1980-01-23
JPS5847855B2 JPS5847855B2 (en) 1983-10-25

Family

ID=13767509

Family Applications (1)

Application Number Title Priority Date Filing Date
JP53082190A Expired JPS5847855B2 (en) 1978-07-05 1978-07-05 Manufacturing method of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5847855B2 (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58159349A (en) * 1982-03-18 1983-09-21 Nec Corp Dividing of crystal substrate
JP2017041525A (en) * 2015-08-19 2017-02-23 株式会社ディスコ Wafer division method
JP2020068322A (en) * 2018-10-25 2020-04-30 株式会社ディスコ Wafer processing method

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58159349A (en) * 1982-03-18 1983-09-21 Nec Corp Dividing of crystal substrate
JP2017041525A (en) * 2015-08-19 2017-02-23 株式会社ディスコ Wafer division method
JP2020068322A (en) * 2018-10-25 2020-04-30 株式会社ディスコ Wafer processing method

Also Published As

Publication number Publication date
JPS5847855B2 (en) 1983-10-25

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