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JPS5583249A - Method of fabricating semiconductor device - Google Patents

Method of fabricating semiconductor device

Info

Publication number
JPS5583249A
JPS5583249A JP15889378A JP15889378A JPS5583249A JP S5583249 A JPS5583249 A JP S5583249A JP 15889378 A JP15889378 A JP 15889378A JP 15889378 A JP15889378 A JP 15889378A JP S5583249 A JPS5583249 A JP S5583249A
Authority
JP
Japan
Prior art keywords
alumina
properties
changed
electric field
field intensity
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP15889378A
Other languages
Japanese (ja)
Other versions
JPS6249982B2 (en
Inventor
Toshihiko Ono
Toshio Kurahashi
Ichiro Fujita
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP15889378A priority Critical patent/JPS5583249A/en
Publication of JPS5583249A publication Critical patent/JPS5583249A/en
Publication of JPS6249982B2 publication Critical patent/JPS6249982B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Drying Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • ing And Chemical Polishing (AREA)

Abstract

PURPOSE: To readily and exactly remove an alumina layer changed in its properties on the surface of an aluminum layer of a semiconductor substrate by high frequency sputtering etch by higher than 120V/cm of electric field intensity.
CONSTITUTION: Since an alumina AlxOyFz changed in its properties incorporates much stronger coupling force than an alumina Al2O3, when higher than 120V/cm of electric field intensity is applied thereto to cause the collision energy of Ar ion to exceed the coupling energy, an etching is initiated. When the pressure of the Ar is increased, the etching speed is accelerated. Thus, the alumina changed in its properties can be exactly etched in good reproducibility.
COPYRIGHT: (C)1980,JPO&Japio
JP15889378A 1978-12-20 1978-12-20 Method of fabricating semiconductor device Granted JPS5583249A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15889378A JPS5583249A (en) 1978-12-20 1978-12-20 Method of fabricating semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15889378A JPS5583249A (en) 1978-12-20 1978-12-20 Method of fabricating semiconductor device

Publications (2)

Publication Number Publication Date
JPS5583249A true JPS5583249A (en) 1980-06-23
JPS6249982B2 JPS6249982B2 (en) 1987-10-22

Family

ID=15681672

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15889378A Granted JPS5583249A (en) 1978-12-20 1978-12-20 Method of fabricating semiconductor device

Country Status (1)

Country Link
JP (1) JPS5583249A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6037130A (en) * 1983-08-10 1985-02-26 Comput Basic Mach Technol Res Assoc Patterning method of thin-film

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0257156A (en) * 1988-09-19 1990-02-26 Nakashima:Kk Fried beans

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6037130A (en) * 1983-08-10 1985-02-26 Comput Basic Mach Technol Res Assoc Patterning method of thin-film

Also Published As

Publication number Publication date
JPS6249982B2 (en) 1987-10-22

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