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JPS5579447A - Photomask substrate and photomask - Google Patents

Photomask substrate and photomask

Info

Publication number
JPS5579447A
JPS5579447A JP15223178A JP15223178A JPS5579447A JP S5579447 A JPS5579447 A JP S5579447A JP 15223178 A JP15223178 A JP 15223178A JP 15223178 A JP15223178 A JP 15223178A JP S5579447 A JPS5579447 A JP S5579447A
Authority
JP
Japan
Prior art keywords
thin film
thickness
photomask
metal
silicon type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP15223178A
Other languages
Japanese (ja)
Other versions
JPS649617B2 (en
Inventor
Akira Kaneki
Tatsuya Ikeuchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Dai Nippon Printing Co Ltd
Original Assignee
Dai Nippon Printing Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Dai Nippon Printing Co Ltd filed Critical Dai Nippon Printing Co Ltd
Priority to JP15223178A priority Critical patent/JPS5579447A/en
Publication of JPS5579447A publication Critical patent/JPS5579447A/en
Publication of JPS649617B2 publication Critical patent/JPS649617B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/50—Mask blanks not covered by G03F1/20 - G03F1/34; Preparation thereof

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Weting (AREA)

Abstract

PURPOSE:To obtain a silicon type photomask capable of electron beam drawing and dry etching, and superior in see-through property and durability, by providing a thin film of silicon type, and a thin film of a conductive material made of a specified metal on a transparent substrate. CONSTITUTION:Ti, V, Nb, Mo, Ta, W, etc. are used as a metal for forming a conductive material thin film. Silicon type thin film 2 (this may be doped with Ge) of about 500-2000Angstrom , preferably 600-1000Angstrom thickness is formed on transparent substrate 1 of about 0.2-6mm thickness, and on this film, conductive thin film 3 of the above metal having a thickness of 1-100Angstrom or so, and a surface electric resistivity of 500kOMEGA/cm<2> or less is further formed to serve as photomask substrate A. The lamination order of these thin films 2, 3 may be reversed and reflection prevention layer 4 of a metal oxide film of 400Angstrom or less thickness may be formed on the uppermost layer.
JP15223178A 1978-12-09 1978-12-09 Photomask substrate and photomask Granted JPS5579447A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15223178A JPS5579447A (en) 1978-12-09 1978-12-09 Photomask substrate and photomask

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15223178A JPS5579447A (en) 1978-12-09 1978-12-09 Photomask substrate and photomask

Publications (2)

Publication Number Publication Date
JPS5579447A true JPS5579447A (en) 1980-06-14
JPS649617B2 JPS649617B2 (en) 1989-02-17

Family

ID=15535948

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15223178A Granted JPS5579447A (en) 1978-12-09 1978-12-09 Photomask substrate and photomask

Country Status (1)

Country Link
JP (1) JPS5579447A (en)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5764739A (en) * 1980-10-09 1982-04-20 Dainippon Printing Co Ltd Photomask substrate and photomask
JPS58138028A (en) * 1982-02-12 1983-08-16 Hitachi Ltd Correcting method for photo mask defect
US4440841A (en) * 1981-02-28 1984-04-03 Dai Nippon Insatsu Kabushiki Kaisha Photomask and photomask blank
US4634643A (en) * 1984-04-18 1987-01-06 Nec X-ray mask and method of manufacturing the same
JPH0194347A (en) * 1987-09-03 1989-04-13 Philips Gloeilampenfab:Nv Manufacture of mask for radiation lithography
JPH0278216A (en) * 1988-09-14 1990-03-19 Hitachi Ltd Manufacture of photomask
JP2010079110A (en) * 2008-09-27 2010-04-08 Hoya Corp Mask blank and method of manufacturing transfer mask
JP2011048353A (en) * 2009-07-30 2011-03-10 Hoya Corp Multi-gradation photomask, photomask blank, method for manufacturing multi-gradation photomask, and pattern transfer method

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4853380A (en) * 1971-11-06 1973-07-26
JPS492626A (en) * 1972-04-24 1974-01-10
JPS5052073A (en) * 1973-02-01 1975-05-09
JPS5113577A (en) * 1974-06-19 1976-02-03 Western Electric Co
JPS53129637A (en) * 1977-04-19 1978-11-11 Nippon Telegr & Teleph Corp <Ntt> Mask for photoetching

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4853380A (en) * 1971-11-06 1973-07-26
JPS492626A (en) * 1972-04-24 1974-01-10
JPS5052073A (en) * 1973-02-01 1975-05-09
JPS5113577A (en) * 1974-06-19 1976-02-03 Western Electric Co
JPS53129637A (en) * 1977-04-19 1978-11-11 Nippon Telegr & Teleph Corp <Ntt> Mask for photoetching

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5764739A (en) * 1980-10-09 1982-04-20 Dainippon Printing Co Ltd Photomask substrate and photomask
US4556608A (en) * 1980-10-09 1985-12-03 Dai Nippon Insatsu Kabushiki Kaisha Photomask blank and photomask
US4440841A (en) * 1981-02-28 1984-04-03 Dai Nippon Insatsu Kabushiki Kaisha Photomask and photomask blank
JPS58138028A (en) * 1982-02-12 1983-08-16 Hitachi Ltd Correcting method for photo mask defect
JPS634173B2 (en) * 1982-02-12 1988-01-27 Hitachi Ltd
US4634643A (en) * 1984-04-18 1987-01-06 Nec X-ray mask and method of manufacturing the same
JPH0194347A (en) * 1987-09-03 1989-04-13 Philips Gloeilampenfab:Nv Manufacture of mask for radiation lithography
JPH0278216A (en) * 1988-09-14 1990-03-19 Hitachi Ltd Manufacture of photomask
JP2010079110A (en) * 2008-09-27 2010-04-08 Hoya Corp Mask blank and method of manufacturing transfer mask
JP2011048353A (en) * 2009-07-30 2011-03-10 Hoya Corp Multi-gradation photomask, photomask blank, method for manufacturing multi-gradation photomask, and pattern transfer method

Also Published As

Publication number Publication date
JPS649617B2 (en) 1989-02-17

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