JPS57159072A - Manufacture of avalanche photodiode - Google Patents
Manufacture of avalanche photodiodeInfo
- Publication number
- JPS57159072A JPS57159072A JP56043627A JP4362781A JPS57159072A JP S57159072 A JPS57159072 A JP S57159072A JP 56043627 A JP56043627 A JP 56043627A JP 4362781 A JP4362781 A JP 4362781A JP S57159072 A JPS57159072 A JP S57159072A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor layer
- junction
- type inp
- guard ring
- low temperature
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 abstract 6
- 229910052793 cadmium Inorganic materials 0.000 abstract 1
- 230000015556 catabolic process Effects 0.000 abstract 1
- 238000010586 diagram Methods 0.000 abstract 1
- 238000009792 diffusion process Methods 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 229910052725 zinc Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/107—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier working in avalanche mode, e.g. avalanche photodiodes
- H01L31/1075—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier working in avalanche mode, e.g. avalanche photodiodes in which the active layers, e.g. absorption or multiplication layers, form an heterostructure, e.g. SAM structure
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Light Receiving Elements (AREA)
Abstract
PURPOSE:To prevent the edge breakdown at the junction terminal, to reduce the dark current and to obtain the avalanche photodiode with which high multiplication can be obtained by a method wherein a guard ring is formed by diffusing Zn at a low temperature. CONSTITUTION:An N type InxGa1-xAsyP1-y (0<=x<=1, 0<=y<=1) semiconductor layer 25, which will be buried later, is formed on an N<+> type InP semiconductor layer 26 by performing an epitaxial growth, and then an N type InP semiconductor layer 8', which forms the heterojunction with the semiconductor layer 25, is formed. Then the deep P-N junction 16 of the guard ring 11 is formed by performing a low temperature diffusion at the temperature of 500 deg.C or below of Zn, and a P<+> type InP semiconductor layer 10' and a shallow P-N junction 17, which will be used to detect light 24, are formed using Zn or Cd. Besides, numeral 12 in the diagram represents an insulating film and numerals 14 and 15 represent an electrode. This device is constituted in such a manner that one end of depletion layer exists in the semiconductor layer 25 when voltage is applied to the P-N junction so that an avalanche multiplication can be generated.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56043627A JPS57159072A (en) | 1981-03-25 | 1981-03-25 | Manufacture of avalanche photodiode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56043627A JPS57159072A (en) | 1981-03-25 | 1981-03-25 | Manufacture of avalanche photodiode |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS57159072A true JPS57159072A (en) | 1982-10-01 |
Family
ID=12669085
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56043627A Pending JPS57159072A (en) | 1981-03-25 | 1981-03-25 | Manufacture of avalanche photodiode |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57159072A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6359322B1 (en) * | 1999-04-15 | 2002-03-19 | Georgia Tech Research Corporation | Avalanche photodiode having edge breakdown suppression |
| WO2020189179A1 (en) * | 2019-03-20 | 2020-09-24 | ソニーセミコンダクタソリューションズ株式会社 | Light reception element, production method for light reception element, and imaging device |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5561078A (en) * | 1978-10-31 | 1980-05-08 | Nippon Telegr & Teleph Corp <Ntt> | Manufacture of guard ring-fitted photodiode |
| JPS5572084A (en) * | 1978-11-27 | 1980-05-30 | Nippon Telegr & Teleph Corp <Ntt> | Semiconductor photo-detector |
-
1981
- 1981-03-25 JP JP56043627A patent/JPS57159072A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5561078A (en) * | 1978-10-31 | 1980-05-08 | Nippon Telegr & Teleph Corp <Ntt> | Manufacture of guard ring-fitted photodiode |
| JPS5572084A (en) * | 1978-11-27 | 1980-05-30 | Nippon Telegr & Teleph Corp <Ntt> | Semiconductor photo-detector |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6359322B1 (en) * | 1999-04-15 | 2002-03-19 | Georgia Tech Research Corporation | Avalanche photodiode having edge breakdown suppression |
| WO2020189179A1 (en) * | 2019-03-20 | 2020-09-24 | ソニーセミコンダクタソリューションズ株式会社 | Light reception element, production method for light reception element, and imaging device |
| US11804561B2 (en) | 2019-03-20 | 2023-10-31 | Sony Semiconductor Solutions Corporation | Light receiving element, method of manufacturing light receiving element, and imaging apparatus |
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