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JPS5558552A - Metal wiring - Google Patents

Metal wiring

Info

Publication number
JPS5558552A
JPS5558552A JP13202778A JP13202778A JPS5558552A JP S5558552 A JPS5558552 A JP S5558552A JP 13202778 A JP13202778 A JP 13202778A JP 13202778 A JP13202778 A JP 13202778A JP S5558552 A JPS5558552 A JP S5558552A
Authority
JP
Japan
Prior art keywords
film
base plate
current
metal
mask
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP13202778A
Other languages
Japanese (ja)
Inventor
Shinichi Sato
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CHIYOU LSI GIJUTSU KENKYU KUMIAI
CHO LSI GIJUTSU KENKYU KUMIAI
Original Assignee
CHIYOU LSI GIJUTSU KENKYU KUMIAI
CHO LSI GIJUTSU KENKYU KUMIAI
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by CHIYOU LSI GIJUTSU KENKYU KUMIAI, CHO LSI GIJUTSU KENKYU KUMIAI filed Critical CHIYOU LSI GIJUTSU KENKYU KUMIAI
Priority to JP13202778A priority Critical patent/JPS5558552A/en
Publication of JPS5558552A publication Critical patent/JPS5558552A/en
Pending legal-status Critical Current

Links

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

PURPOSE: To obtain a wiring pattern accurately and easily, by providing a foundation metal layer for flowing current uniformly when metal wiring, which is connected to a base plate via an insulating film having an opening, is formed on a semiconductor base plate by means of electrolytic etching.
CONSTITUTION: SiO2 film 2 having contact hole 5 in a specified region is formed on Si base plate 1. On top of this is fitted No.1 metal film 11 for supplying current to various wirings of Ti or W in contact with base plate 1. Next, the entire surface is fitted with Al No.2 metal film 3. Then, by using mask 4, made of photoresist film, electrolytic etching is operated. Current is supplied from the anode side to film 3 via base plate 1, hole 5 and film 11. By this, even if film 11 is exposed as etching progresses, current flows through this, and film 3 is separated from wirings a, b, c clearly. Subsequently, mask 4 is removed, and film 11, which has become unneeded, is removed by using CF4 gas plasma.
COPYRIGHT: (C)1980,JPO&Japio
JP13202778A 1978-10-25 1978-10-25 Metal wiring Pending JPS5558552A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13202778A JPS5558552A (en) 1978-10-25 1978-10-25 Metal wiring

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13202778A JPS5558552A (en) 1978-10-25 1978-10-25 Metal wiring

Publications (1)

Publication Number Publication Date
JPS5558552A true JPS5558552A (en) 1980-05-01

Family

ID=15071781

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13202778A Pending JPS5558552A (en) 1978-10-25 1978-10-25 Metal wiring

Country Status (1)

Country Link
JP (1) JPS5558552A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62154628A (en) * 1985-12-26 1987-07-09 Matsushita Electric Ind Co Ltd Dry etching method
WO2002022916A1 (en) * 2000-09-18 2002-03-21 Obducat Aktiebolag Method of etching, as well as frame element, mask and prefabricated substrate element for use in such etching
US6656341B2 (en) 2000-09-18 2003-12-02 Obducat Aktiebolag Method of etching, as well as frame element, mask and prefabricated substrate element for use in such etching

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62154628A (en) * 1985-12-26 1987-07-09 Matsushita Electric Ind Co Ltd Dry etching method
WO2002022916A1 (en) * 2000-09-18 2002-03-21 Obducat Aktiebolag Method of etching, as well as frame element, mask and prefabricated substrate element for use in such etching
US6656341B2 (en) 2000-09-18 2003-12-02 Obducat Aktiebolag Method of etching, as well as frame element, mask and prefabricated substrate element for use in such etching

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