JPS5555594A - Semiconductor light amplifier - Google Patents
Semiconductor light amplifierInfo
- Publication number
- JPS5555594A JPS5555594A JP12780678A JP12780678A JPS5555594A JP S5555594 A JPS5555594 A JP S5555594A JP 12780678 A JP12780678 A JP 12780678A JP 12780678 A JP12780678 A JP 12780678A JP S5555594 A JPS5555594 A JP S5555594A
- Authority
- JP
- Japan
- Prior art keywords
- light
- end surfaces
- waveguide path
- al2o3
- evaporated
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/50—Amplifier structures not provided for in groups H01S5/02 - H01S5/30
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
- H01S5/0286—Coatings with a reflectivity that is not constant over the facets, e.g. apertures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
- H01S5/0281—Coatings made of semiconductor materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/1003—Waveguide having a modified shape along the axis, e.g. branched, curved, tapered, voids
- H01S5/1007—Branched waveguides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/1082—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region with a special facet structure, e.g. structured, non planar, oblique
- H01S5/1085—Oblique facets
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
- Optical Integrated Circuits (AREA)
- Optical Communication System (AREA)
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12780678A JPS5555594A (en) | 1978-10-19 | 1978-10-19 | Semiconductor light amplifier |
DE19792942204 DE2942204A1 (de) | 1978-10-19 | 1979-10-18 | Halbleiter-lichtverstaerker |
FR7925893A FR2439481A1 (fr) | 1978-10-19 | 1979-10-18 | Amplificateur de lumiere a semi-conducteur |
GB7936432A GB2033648A (en) | 1978-10-19 | 1979-10-19 | Semi-conductor light amplifier |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12780678A JPS5555594A (en) | 1978-10-19 | 1978-10-19 | Semiconductor light amplifier |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5555594A true JPS5555594A (en) | 1980-04-23 |
Family
ID=14969130
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP12780678A Pending JPS5555594A (en) | 1978-10-19 | 1978-10-19 | Semiconductor light amplifier |
Country Status (4)
Country | Link |
---|---|
JP (1) | JPS5555594A (fr) |
DE (1) | DE2942204A1 (fr) |
FR (1) | FR2439481A1 (fr) |
GB (1) | GB2033648A (fr) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01109789A (ja) * | 1987-10-22 | 1989-04-26 | Mitsubishi Electric Corp | 光増幅器 |
JPH0659163A (ja) * | 1992-01-31 | 1994-03-04 | Matsushita Electric Ind Co Ltd | 光学装置 |
JP2010003833A (ja) * | 2008-06-19 | 2010-01-07 | Seiko Epson Corp | 発光装置 |
JP2010016172A (ja) * | 2008-07-03 | 2010-01-21 | Seiko Epson Corp | 発光装置 |
JP2011071390A (ja) * | 2009-09-28 | 2011-04-07 | Seiko Epson Corp | 発光素子、発光装置、およびプロジェクター |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3604293A1 (de) * | 1986-02-12 | 1987-08-13 | Telefunken Electronic Gmbh | Heterostruktur-halbleiterlaserdiode |
GB8611241D0 (en) * | 1986-05-08 | 1986-06-18 | British Telecomm | Optical amplifiers |
US4870654A (en) * | 1987-05-22 | 1989-09-26 | California Laboratories, Inc. | Generation of multiply folded optical paths |
US4815094A (en) * | 1987-05-22 | 1989-03-21 | California Laboratories, Inc. | Multiply folded laser systems |
JP2539089B2 (ja) * | 1990-09-28 | 1996-10-02 | 株式会社東芝 | 半導体レ―ザ増幅器および半導体レ―ザ増幅装置 |
JP2010093078A (ja) * | 2008-10-08 | 2010-04-22 | Hamamatsu Photonics Kk | 光学素子、レーザ光発振装置及びレーザ光増幅装置 |
CN102916327A (zh) * | 2012-10-25 | 2013-02-06 | 北京理工大学 | 一种全反射式板条激光放大器 |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
BE789175A (fr) * | 1971-09-24 | 1973-01-15 | Siemens Ag | Amplificateur intermediaire pour un systeme de transmission d'informations |
US3760297A (en) * | 1972-01-20 | 1973-09-18 | Int Standard Electric Corp | Laser to optical fiber coupling |
-
1978
- 1978-10-19 JP JP12780678A patent/JPS5555594A/ja active Pending
-
1979
- 1979-10-18 FR FR7925893A patent/FR2439481A1/fr active Granted
- 1979-10-18 DE DE19792942204 patent/DE2942204A1/de not_active Ceased
- 1979-10-19 GB GB7936432A patent/GB2033648A/en not_active Withdrawn
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01109789A (ja) * | 1987-10-22 | 1989-04-26 | Mitsubishi Electric Corp | 光増幅器 |
JPH0659163A (ja) * | 1992-01-31 | 1994-03-04 | Matsushita Electric Ind Co Ltd | 光学装置 |
JP2010003833A (ja) * | 2008-06-19 | 2010-01-07 | Seiko Epson Corp | 発光装置 |
JP2010016172A (ja) * | 2008-07-03 | 2010-01-21 | Seiko Epson Corp | 発光装置 |
JP2011071390A (ja) * | 2009-09-28 | 2011-04-07 | Seiko Epson Corp | 発光素子、発光装置、およびプロジェクター |
Also Published As
Publication number | Publication date |
---|---|
FR2439481A1 (fr) | 1980-05-16 |
FR2439481B1 (fr) | 1983-11-25 |
DE2942204A1 (de) | 1980-04-24 |
GB2033648A (en) | 1980-05-21 |
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