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JPS5595389A - Semiconductor laser device - Google Patents

Semiconductor laser device

Info

Publication number
JPS5595389A
JPS5595389A JP356679A JP356679A JPS5595389A JP S5595389 A JPS5595389 A JP S5595389A JP 356679 A JP356679 A JP 356679A JP 356679 A JP356679 A JP 356679A JP S5595389 A JPS5595389 A JP S5595389A
Authority
JP
Japan
Prior art keywords
laser beam
emitting surface
wavelength
reflection mirror
laser
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP356679A
Other languages
Japanese (ja)
Other versions
JPS5821436B2 (en
Inventor
Tetsuya Kaneda
Kiyoshi Nawata
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP54003566A priority Critical patent/JPS5821436B2/en
Publication of JPS5595389A publication Critical patent/JPS5595389A/en
Publication of JPS5821436B2 publication Critical patent/JPS5821436B2/en
Expired legal-status Critical Current

Links

Landscapes

  • Semiconductor Lasers (AREA)

Abstract

PURPOSE: To increase the laser beam gain ratio at the pulse-modulated signal ON/OFF time, by coupling an external resonator constructed of a reflection mirror and having a length of light path half an integer multiple of the single mode laser beam wavelength, to the laser beam emitting surface of a semiconductor laser.
CONSTITUTION: External resonator 6, having metal evaporated film 9 via lens 4 and consisting of reflection mirror 5, is coupled to emitting surface 2b of double heterojunction type semiconductor laser 3, in which stripe-shaped laser beam emitting surfaces 2a and 2b are formed on its opposing sides 1a and 1b. In this structure, semicircular cylindrical surface 7a is provided on the side of laser 3 of rasonator 6, and flat surface 7b on the opposite side. The laser beam from emitting surface 2b is passed through glass 8 constituting lens 4 and is made parallel to the axis of beam. further, the length of the beam path between emitting surface 2b and reflection mirror 5 is set at half an integer multiple of the wavelength λ0 at the maximum gain mode, namely, λ0×N/2 (where N=1, 2,...). By this, it is possible to get a single mode laser beam of wavelength λ0 from emitting surface 2a.
COPYRIGHT: (C)1980,JPO&Japio
JP54003566A 1979-01-16 1979-01-16 semiconductor laser equipment Expired JPS5821436B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP54003566A JPS5821436B2 (en) 1979-01-16 1979-01-16 semiconductor laser equipment

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP54003566A JPS5821436B2 (en) 1979-01-16 1979-01-16 semiconductor laser equipment

Publications (2)

Publication Number Publication Date
JPS5595389A true JPS5595389A (en) 1980-07-19
JPS5821436B2 JPS5821436B2 (en) 1983-04-30

Family

ID=11560977

Family Applications (1)

Application Number Title Priority Date Filing Date
JP54003566A Expired JPS5821436B2 (en) 1979-01-16 1979-01-16 semiconductor laser equipment

Country Status (1)

Country Link
JP (1) JPS5821436B2 (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59500248A (en) * 1982-02-09 1984-02-16 アイ、テイ−、テイ−，インダストリ−ズ　インコ−ポレ−テッド semiconductor laser
JPS5998579A (en) * 1982-11-05 1984-06-06 ブリティシュ・テレコミュニケーションズ・パブリック・リミテッド・カンパニ Laser device and controlling method therefor
JPS59163886A (en) * 1983-02-25 1984-09-14 アメリカン・テレフオン・アンド・テレグラフ・カムパニ− Coupling cavity laser
JPS60136276A (en) * 1983-12-23 1985-07-19 Fujitsu Ltd Semiconductor laser device
JPS60501928A (en) * 1983-07-28 1985-11-07 アメリカン テレフオン アンド テレグラフ カムパニ− coupled cavity laser

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52106696A (en) * 1976-03-04 1977-09-07 Nec Corp Basic transverse mode oscillating semiconductor razar unit
JPS5358788A (en) * 1976-11-06 1978-05-26 Mitsubishi Electric Corp Injection type laser device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52106696A (en) * 1976-03-04 1977-09-07 Nec Corp Basic transverse mode oscillating semiconductor razar unit
JPS5358788A (en) * 1976-11-06 1978-05-26 Mitsubishi Electric Corp Injection type laser device

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59500248A (en) * 1982-02-09 1984-02-16 アイ、テイ−、テイ−，インダストリ−ズ　インコ−ポレ−テッド semiconductor laser
JPS5998579A (en) * 1982-11-05 1984-06-06 ブリティシュ・テレコミュニケーションズ・パブリック・リミテッド・カンパニ Laser device and controlling method therefor
JPH0559595B2 (en) * 1982-11-05 1993-08-31 British Telecomm
JPS59163886A (en) * 1983-02-25 1984-09-14 アメリカン・テレフオン・アンド・テレグラフ・カムパニ− Coupling cavity laser
JPS60501928A (en) * 1983-07-28 1985-11-07 アメリカン テレフオン アンド テレグラフ カムパニ− coupled cavity laser
JPS60136276A (en) * 1983-12-23 1985-07-19 Fujitsu Ltd Semiconductor laser device

Also Published As

Publication number Publication date
JPS5821436B2 (en) 1983-04-30

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