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JPS5547300A - Crystal pulling device - Google Patents

Crystal pulling device

Info

Publication number
JPS5547300A
JPS5547300A JP11899078A JP11899078A JPS5547300A JP S5547300 A JPS5547300 A JP S5547300A JP 11899078 A JP11899078 A JP 11899078A JP 11899078 A JP11899078 A JP 11899078A JP S5547300 A JPS5547300 A JP S5547300A
Authority
JP
Japan
Prior art keywords
crucible
single crystal
molten
heat
prevent
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP11899078A
Other languages
Japanese (ja)
Other versions
JPS6018634B2 (en
Inventor
Toshihiko Suzuki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP11899078A priority Critical patent/JPS6018634B2/en
Publication of JPS5547300A publication Critical patent/JPS5547300A/en
Publication of JPS6018634B2 publication Critical patent/JPS6018634B2/en
Expired legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

PURPOSE: To obtain a Si single crystal having a uniform impurity concn. distribution by setting an inner crucible in an outer crucible containing molten raw material at an enough interval to prevent the inner crucible from adhering to the outer crucible owing to heat and by lowering the inner crucible to hold the level of the melt in the inner crucible constant.
CONSTITUTION: Inner quartz crucible 13 is set outer quartz crucible 12 contg. molten Si 14 at an interval of 1cm or more to prevent adhesion of the crucibles owing to the heat of Si 14. Crucible 13 is supported by support rod 22 through holder 21 to prevent heat deformation, thereby carrying out smooth operation of growing Si single crystal 18. Since crucible 13 is lowered by a predetermined distance, or crucible 12 is raised by a predetermined distance by raising crucible shaft 19, the level of molten Si in crucible 13 is held constant to make the concn. of impurities in grown Si single crystal 18 uniform. Thus, occurrence of swirly defects is prevented in the pulled single crystal.
COPYRIGHT: (C)1980,JPO&Japio
JP11899078A 1978-09-27 1978-09-27 Crystal pulling device Expired JPS6018634B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11899078A JPS6018634B2 (en) 1978-09-27 1978-09-27 Crystal pulling device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11899078A JPS6018634B2 (en) 1978-09-27 1978-09-27 Crystal pulling device

Publications (2)

Publication Number Publication Date
JPS5547300A true JPS5547300A (en) 1980-04-03
JPS6018634B2 JPS6018634B2 (en) 1985-05-11

Family

ID=14750268

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11899078A Expired JPS6018634B2 (en) 1978-09-27 1978-09-27 Crystal pulling device

Country Status (1)

Country Link
JP (1) JPS6018634B2 (en)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6033294A (en) * 1983-07-29 1985-02-20 Toshiba Ceramics Co Ltd Pulling device for single crystal semiconductor
JPS61261288A (en) * 1985-05-14 1986-11-19 Toshiba Ceramics Co Ltd Apparatus for pulling up silicon single crystal
EP0296401A1 (en) * 1987-06-09 1988-12-28 Nitto Chemical Industry Co., Ltd. Process for manufacturing fine silica particles
US4936949A (en) * 1987-06-01 1990-06-26 Mitsubishi Kinzoku Kabushiki Kaisha Czochraski process for growing crystals using double wall crucible
US5196173A (en) * 1988-10-13 1993-03-23 Mitsubishi Materials Corporation Apparatus for process for growing crystals of semiconductor materials
JP2006199577A (en) * 2004-12-22 2006-08-03 Tokuyama Corp Pulling apparatus for manufacturing metal fluoride single crystal and method of manufacturing metal fluoride single crystal using the apparatus
JP2007297222A (en) * 2006-04-27 2007-11-15 Tokuyama Corp Pulling apparatus for metal fluoride single crystal and method for manufacturing metal fluoride single crystal

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6033294A (en) * 1983-07-29 1985-02-20 Toshiba Ceramics Co Ltd Pulling device for single crystal semiconductor
JPH0359040B2 (en) * 1983-07-29 1991-09-09 Toshiba Ceramics Co
JPS61261288A (en) * 1985-05-14 1986-11-19 Toshiba Ceramics Co Ltd Apparatus for pulling up silicon single crystal
US4936949A (en) * 1987-06-01 1990-06-26 Mitsubishi Kinzoku Kabushiki Kaisha Czochraski process for growing crystals using double wall crucible
EP0296401A1 (en) * 1987-06-09 1988-12-28 Nitto Chemical Industry Co., Ltd. Process for manufacturing fine silica particles
US5196173A (en) * 1988-10-13 1993-03-23 Mitsubishi Materials Corporation Apparatus for process for growing crystals of semiconductor materials
JP2006199577A (en) * 2004-12-22 2006-08-03 Tokuyama Corp Pulling apparatus for manufacturing metal fluoride single crystal and method of manufacturing metal fluoride single crystal using the apparatus
JP2007297222A (en) * 2006-04-27 2007-11-15 Tokuyama Corp Pulling apparatus for metal fluoride single crystal and method for manufacturing metal fluoride single crystal

Also Published As

Publication number Publication date
JPS6018634B2 (en) 1985-05-11

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