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GB1365724A - Methods of manufacturing single crystals of semiconductor mater ial - Google Patents

Methods of manufacturing single crystals of semiconductor mater ial

Info

Publication number
GB1365724A
GB1365724A GB4442871A GB4442871A GB1365724A GB 1365724 A GB1365724 A GB 1365724A GB 4442871 A GB4442871 A GB 4442871A GB 4442871 A GB4442871 A GB 4442871A GB 1365724 A GB1365724 A GB 1365724A
Authority
GB
United Kingdom
Prior art keywords
rod
crystal
diameter
free
silicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB4442871A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Philips Electronics UK Ltd
Original Assignee
Philips Electronic and Associated Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Electronic and Associated Industries Ltd filed Critical Philips Electronic and Associated Industries Ltd
Publication of GB1365724A publication Critical patent/GB1365724A/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/28—Controlling or regulating
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/08—Germanium

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

1365724 Single silicon crystals PHILIPS ELECTRONIC & ASSOCIATED INDUSTRIES Ltd 23 Sept 1971 [26 Sept 1970] 44428/71 Heading BIS Single crystals of silicon having a rod-shaped, dislocation free part with a diameter of at least 1 cm, are made by solidifying molten silicon in substantially one growth direction in a substantially oxygen-free atmosphere, taking known measures to prevent formation of dislocations during growth of the rod-shaped crystal part of at least 1cm in diameter, by growing the crystal in a hydrogen-containing atmosphere at a rate of displacement of more than 2 mms per minute whilst maintaining the rod diameter at least 1 cm. The crystal is "vacancy-cluster free" i.e. clusters are not visible in the crystal when the latter is subjected to an amisotropic etching treatment. The crystal is preferably grown by a floating zone melting process using as starting material a dislocation-free seed crystal and initially in the growth the rod diameter is less than 1 cm but is subsequently increased to at least 1 cm. As shown in the Figure a rod-shaped body of polycrystalline silicon 1, positioned in holder 2 is movable vertically and rotatable about its vertical axis by shaft 12. The rod has a diameter of 25 mms and a length of about 40 cm and has been purified by floating zone melting. To form the single crystal a rod-shaped seed crystal 3, of silicon of length 5 cms and of diameter 8 mms is secured in holder 4 which is movable vertically by shaft 14 and also rotatable. The assembly is arranged in chamber 10 and the desired atmosphere in the chamber e.g. oxygen-free argon with 10% hydrogen, is supplied through inlet duct 11 and outlet duct 13. The upper end of rod 1 is then converted to a molten zone 6, by a water-cooled high frequency coil 5 operated by high frequency generator 15, and the seed crystal 3, lowered and contacted with the molten zone. Initially a rod shaped part 7 is drawn from the melt and after this part has attained a length of about 5 cms the drawing rate is decrease, conical part 8 formed, and subsequently a monocrystalline silicon rod 9 formed having the desired diameter and vacancy cluster-free property. The monocrystal may be used as a photosensitive target.
GB4442871A 1970-09-26 1971-09-23 Methods of manufacturing single crystals of semiconductor mater ial Expired GB1365724A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL7014206A NL7014206A (en) 1970-09-26 1970-09-26

Publications (1)

Publication Number Publication Date
GB1365724A true GB1365724A (en) 1974-09-04

Family

ID=19811172

Family Applications (1)

Application Number Title Priority Date Filing Date
GB4442871A Expired GB1365724A (en) 1970-09-26 1971-09-23 Methods of manufacturing single crystals of semiconductor mater ial

Country Status (8)

Country Link
AU (1) AU3387371A (en)
BE (1) BE773097A (en)
CA (1) CA954017A (en)
DE (1) DE2147514A1 (en)
FR (1) FR2112983A5 (en)
GB (1) GB1365724A (en)
IT (1) IT939867B (en)
NL (1) NL7014206A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6843848B2 (en) 2000-03-24 2005-01-18 Siltronic Ag Semiconductor wafer made from silicon and method for producing the semiconductor wafer
CN103993353A (en) * 2014-04-18 2014-08-20 洛阳金诺机械工程有限公司 Seed crystal clamping head for rotating seed crystals
CN103993352A (en) * 2014-04-18 2014-08-20 洛阳金诺机械工程有限公司 Silicon core pulling method for rotating seed crystals
CN104264220A (en) * 2014-07-02 2015-01-07 洛阳金诺机械工程有限公司 Direct silicon core drawing method using product material
CN111624460A (en) * 2020-06-28 2020-09-04 西安奕斯伟硅片技术有限公司 Method for detecting defect distribution area of monocrystalline silicon

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6843848B2 (en) 2000-03-24 2005-01-18 Siltronic Ag Semiconductor wafer made from silicon and method for producing the semiconductor wafer
CN103993353A (en) * 2014-04-18 2014-08-20 洛阳金诺机械工程有限公司 Seed crystal clamping head for rotating seed crystals
CN103993352A (en) * 2014-04-18 2014-08-20 洛阳金诺机械工程有限公司 Silicon core pulling method for rotating seed crystals
CN103993353B (en) * 2014-04-18 2019-07-23 洛阳金诺机械工程有限公司 A kind of seedholder rotating seed crystal
CN104264220A (en) * 2014-07-02 2015-01-07 洛阳金诺机械工程有限公司 Direct silicon core drawing method using product material
CN111624460A (en) * 2020-06-28 2020-09-04 西安奕斯伟硅片技术有限公司 Method for detecting defect distribution area of monocrystalline silicon
CN111624460B (en) * 2020-06-28 2022-10-21 西安奕斯伟材料科技有限公司 Method for detecting defect distribution area of monocrystalline silicon

Also Published As

Publication number Publication date
AU3387371A (en) 1973-03-29
IT939867B (en) 1973-02-10
BE773097A (en) 1972-03-24
NL7014206A (en) 1972-03-28
CA954017A (en) 1974-09-03
DE2147514A1 (en) 1972-03-30
FR2112983A5 (en) 1972-06-23

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Legal Events

Date Code Title Description
PS Patent sealed
PLNP Patent lapsed through nonpayment of renewal fees