JPS5538946A - Sputtering apparatus - Google Patents
Sputtering apparatusInfo
- Publication number
- JPS5538946A JPS5538946A JP11125878A JP11125878A JPS5538946A JP S5538946 A JPS5538946 A JP S5538946A JP 11125878 A JP11125878 A JP 11125878A JP 11125878 A JP11125878 A JP 11125878A JP S5538946 A JPS5538946 A JP S5538946A
- Authority
- JP
- Japan
- Prior art keywords
- workpiece
- electrode
- bias
- cathode
- self
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Physical Vapour Deposition (AREA)
Abstract
PURPOSE:To provide a sputtering apparatus which shows a large accumulating rate without causing defect on the workpiece, by arranging an intermediate electrode insulated electrically between the cathode and the anode. CONSTITUTION:An intermediate disc-shaped electrode 9 made of Al is arranged between the cathode 2 and the anode 3 contained in a belljar l, and a workpiece 5 is attached to the under surface of the electrode 9. The electrode 9 arranged at such a position apart from the cathode 2 that a required self-bias is given to the electorde 9, and is supported by a supporting means in the belljar 1 so that it is insulated electrically. When the self-bias is set at a value, use of this apparatus allows to apply high frequency electric power by a power supply 7 larger than that applied by conventional apparatuses, consequently, the accumulating rate of the material particles of target 4 on the workpiece 5 is increased. When the accumulating rate is set at the same value, the self-bias is decreased compared with that of conventional apparatuses, reducing the formation of defect on the workpiece.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11125878A JPS5538946A (en) | 1978-09-12 | 1978-09-12 | Sputtering apparatus |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11125878A JPS5538946A (en) | 1978-09-12 | 1978-09-12 | Sputtering apparatus |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5538946A true JPS5538946A (en) | 1980-03-18 |
Family
ID=14556625
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP11125878A Pending JPS5538946A (en) | 1978-09-12 | 1978-09-12 | Sputtering apparatus |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5538946A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6411971A (en) * | 1987-07-03 | 1989-01-17 | Seiko Epson Corp | High frequency bias sputtering device |
-
1978
- 1978-09-12 JP JP11125878A patent/JPS5538946A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6411971A (en) * | 1987-07-03 | 1989-01-17 | Seiko Epson Corp | High frequency bias sputtering device |
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