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JPS5647574A - Plasma etching apparatus - Google Patents

Plasma etching apparatus

Info

Publication number
JPS5647574A
JPS5647574A JP12420679A JP12420679A JPS5647574A JP S5647574 A JPS5647574 A JP S5647574A JP 12420679 A JP12420679 A JP 12420679A JP 12420679 A JP12420679 A JP 12420679A JP S5647574 A JPS5647574 A JP S5647574A
Authority
JP
Japan
Prior art keywords
electrodes
treated
electrode
etching apparatus
plasma etching
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP12420679A
Other languages
Japanese (ja)
Inventor
Masahiro Shibagaki
Yasuhiro Horiike
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP12420679A priority Critical patent/JPS5647574A/en
Publication of JPS5647574A publication Critical patent/JPS5647574A/en
Pending legal-status Critical Current

Links

Landscapes

  • ing And Chemical Polishing (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

PURPOSE: To improve the thermal contact between a material to be treated and an electrode by fixing the material to the electrode by electrostatic attraction.
CONSTITUTION: In the plasma etching apparatus wherein voltage is applied to electrodes 4, 5 arranged in a mutually opposed manner and a gas plasma is formed between said electrodes to etch the material 20 to be treated on the electrodes, DC voltage with several kV is applied between electrodes 101 from a DC electric source 103. Therefore, the material 104 to be treated is fixed to an electrode 105 sufficiently by electrostatic attraction and an extremely good deposited film is obtained.
COPYRIGHT: (C)1981,JPO&Japio
JP12420679A 1979-09-28 1979-09-28 Plasma etching apparatus Pending JPS5647574A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12420679A JPS5647574A (en) 1979-09-28 1979-09-28 Plasma etching apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12420679A JPS5647574A (en) 1979-09-28 1979-09-28 Plasma etching apparatus

Publications (1)

Publication Number Publication Date
JPS5647574A true JPS5647574A (en) 1981-04-30

Family

ID=14879609

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12420679A Pending JPS5647574A (en) 1979-09-28 1979-09-28 Plasma etching apparatus

Country Status (1)

Country Link
JP (1) JPS5647574A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58185773A (en) * 1982-04-21 1983-10-29 Toshiba Corp Dry etching method
JPH03232226A (en) * 1990-02-08 1991-10-16 Fujitsu Ltd Etching device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58185773A (en) * 1982-04-21 1983-10-29 Toshiba Corp Dry etching method
JPH03232226A (en) * 1990-02-08 1991-10-16 Fujitsu Ltd Etching device

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