[go: up one dir, main page]
More Web Proxy on the site http://driver.im/

JPS55154784A - Photoreceptor - Google Patents

Photoreceptor

Info

Publication number
JPS55154784A
JPS55154784A JP6299979A JP6299979A JPS55154784A JP S55154784 A JPS55154784 A JP S55154784A JP 6299979 A JP6299979 A JP 6299979A JP 6299979 A JP6299979 A JP 6299979A JP S55154784 A JPS55154784 A JP S55154784A
Authority
JP
Japan
Prior art keywords
layer
region
type
same
low resistance
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP6299979A
Other languages
Japanese (ja)
Other versions
JPS6244704B2 (en
Inventor
Yasuo Shinohara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP6299979A priority Critical patent/JPS55154784A/en
Publication of JPS55154784A publication Critical patent/JPS55154784A/en
Publication of JPS6244704B2 publication Critical patent/JPS6244704B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
    • H01L31/105—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PIN type

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Light Receiving Elements (AREA)

Abstract

PURPOSE:To obtain a photodiode having high light receiving efficiency by forming the same conducting type low resistance layer on the surface layer of a high resistance semiconductor substrate, and forming a reverse conducting type diffused region having the same or slightly protruded as the low resistance layer thereat to form a PIN-junction. CONSTITUTION:P ion or the like is implanted onto the same conducting type low resistance shallow n<+>-type layer 2 as the surface layer of a high resistance n<->-type semiconductor substrate 1 thereon, and an n<+>-type channel stopper region 4 is inserted into the substrate 1 through the layer 2 at the peripheral edge. Then, to the layer 2 surround by the region 4 is diffused and formed a p<+>-type light receiving region 3 having the same depth as or slightly protruded into the layer 2, and a non- reflective coating film 6 is coated over the region 3 and the oxide film 11 formed on the exposed layer 2. Thereafter, aluminum surface electrodes 7 are mounted through the openings perforated at the region 4 and the film 6 at the region 3, and the ohmic back surface electrode 8 is mounted through the region 5 onto the back surface of the substrate 1.
JP6299979A 1979-05-22 1979-05-22 Photoreceptor Granted JPS55154784A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6299979A JPS55154784A (en) 1979-05-22 1979-05-22 Photoreceptor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6299979A JPS55154784A (en) 1979-05-22 1979-05-22 Photoreceptor

Publications (2)

Publication Number Publication Date
JPS55154784A true JPS55154784A (en) 1980-12-02
JPS6244704B2 JPS6244704B2 (en) 1987-09-22

Family

ID=13216577

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6299979A Granted JPS55154784A (en) 1979-05-22 1979-05-22 Photoreceptor

Country Status (1)

Country Link
JP (1) JPS55154784A (en)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6384169A (en) * 1986-09-29 1988-04-14 Matsushita Electronics Corp Optical semiconductor device
JPH01303752A (en) * 1988-05-31 1989-12-07 Oki Electric Ind Co Ltd Structure of photosensitive part of solid-state image sensing device
JPH08213647A (en) * 1995-12-07 1996-08-20 Matsushita Electron Corp Optical semiconductor device
JPH08228019A (en) * 1995-12-07 1996-09-03 Matsushita Electron Corp Optical semiconductor device
EP0908956A2 (en) * 1997-10-06 1999-04-14 Canon Kabushiki Kaisha Photoelectric conversion apparatus and image sensor
US6590242B1 (en) 1999-02-25 2003-07-08 Canon Kabushiki Kaisha Light-receiving element and photoelectric conversion device
US6878977B1 (en) 1999-02-25 2005-04-12 Canon Kabushiki Kaisha Photoelectric conversion device, and image sensor and image input system making use of the same

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6384169A (en) * 1986-09-29 1988-04-14 Matsushita Electronics Corp Optical semiconductor device
JPH01303752A (en) * 1988-05-31 1989-12-07 Oki Electric Ind Co Ltd Structure of photosensitive part of solid-state image sensing device
JP2521789B2 (en) * 1988-05-31 1996-08-07 沖電気工業株式会社 Photosensitive unit structure of solid-state imaging device
JPH08213647A (en) * 1995-12-07 1996-08-20 Matsushita Electron Corp Optical semiconductor device
JPH08228019A (en) * 1995-12-07 1996-09-03 Matsushita Electron Corp Optical semiconductor device
EP0908956A2 (en) * 1997-10-06 1999-04-14 Canon Kabushiki Kaisha Photoelectric conversion apparatus and image sensor
EP0908956B1 (en) * 1997-10-06 2007-11-21 Canon Kabushiki Kaisha Photoelectric conversion apparatus and image sensor
US6590242B1 (en) 1999-02-25 2003-07-08 Canon Kabushiki Kaisha Light-receiving element and photoelectric conversion device
US6878977B1 (en) 1999-02-25 2005-04-12 Canon Kabushiki Kaisha Photoelectric conversion device, and image sensor and image input system making use of the same
US7151305B2 (en) 1999-02-25 2006-12-19 Canon Kabushiki Kaisha Photoelectric conversion device, and image sensor and image input system making use of the same
EP2287917A2 (en) 1999-02-25 2011-02-23 Canon Kabushiki Kaisha Light-receiving element and photoelectric conversion device

Also Published As

Publication number Publication date
JPS6244704B2 (en) 1987-09-22

Similar Documents

Publication Publication Date Title
JPS55154784A (en) Photoreceptor
JPS5395581A (en) Manufacture for semiconductor device
JPS55102267A (en) Semiconductor control element
JPS5591184A (en) Photodiode
JPS5721875A (en) Photosensor
JPS57166078A (en) Semiconductor device
JPS57155784A (en) Photodiode
JPS57197860A (en) Semiconductor device
JPS55146967A (en) Semiconductor ic device
JPS5550669A (en) Pin diode
JPS556841A (en) Planar type semiconductor device
JPS55125678A (en) Zener diode
JPS5685858A (en) Semiconductor device
JPS54106174A (en) Semiconductor device and its manufacture
JPS5640276A (en) Preparation of semiconductor device
JPS5598857A (en) Planar type semiconductor device
JPS5715420A (en) Manufacture of semiconductor device
JPS5745273A (en) Semiconductor device
JPS54102992A (en) Photoelectric converting device
JPS564274A (en) Semiconductor device
JPS55120166A (en) Semiconductor device
JPS5487470A (en) Manufacture of semiconductor device
JPS54114185A (en) Semiconductor device
JPS54101663A (en) Aluminum diffusion method
JPS53110464A (en) Semiconductor device