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JPS55105350A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS55105350A
JPS55105350A JP1295079A JP1295079A JPS55105350A JP S55105350 A JPS55105350 A JP S55105350A JP 1295079 A JP1295079 A JP 1295079A JP 1295079 A JP1295079 A JP 1295079A JP S55105350 A JPS55105350 A JP S55105350A
Authority
JP
Japan
Prior art keywords
film
periphery
side walls
sio
region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1295079A
Other languages
Japanese (ja)
Other versions
JPS6210027B2 (en
Inventor
Koichi Hashimoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP1295079A priority Critical patent/JPS55105350A/en
Publication of JPS55105350A publication Critical patent/JPS55105350A/en
Publication of JPS6210027B2 publication Critical patent/JPS6210027B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Bipolar Transistors (AREA)
  • Local Oxidation Of Silicon (AREA)

Abstract

PURPOSE: To prevent deterioration of current amplification factors, frequency characteristics, and the like, by covering the inner side walls of the periphery of a thick field oxide film, which is formed on the periphery of a semiconductor substrate by a silicon nitride film and avoiding the damages of the field oxide film in opening a hole in a gate oxide film.
CONSTITUTION: A thick field SiO2 film 1 is formed on the periphery of a semiconductor substrate, and a base region 2 is diffused and formed in the substrate surrounded by the said field SiO2 film 1. The inner side walls at the periphery of the film 1 are covered by an Si3N4 film 9 and a thin gate SiO2 film 6 is deposited on the film 1. Thereafter, a window for diffusing and forming an emitter region 3 is formed by using hydrogen fluoride and the like. In this way, the inner side walls of the periphery of the film 1 are not subjected to damages, and the base width W3 of the normal portion beneath the region 3 becomes equal to the base width W4 of the side portion of the side wall of the film 1. Therefore, the characteristics of the element are not deteriorated.
COPYRIGHT: (C)1980,JPO&Japio
JP1295079A 1979-02-07 1979-02-07 Semiconductor device Granted JPS55105350A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1295079A JPS55105350A (en) 1979-02-07 1979-02-07 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1295079A JPS55105350A (en) 1979-02-07 1979-02-07 Semiconductor device

Publications (2)

Publication Number Publication Date
JPS55105350A true JPS55105350A (en) 1980-08-12
JPS6210027B2 JPS6210027B2 (en) 1987-03-04

Family

ID=11819551

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1295079A Granted JPS55105350A (en) 1979-02-07 1979-02-07 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS55105350A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57104240A (en) * 1980-12-22 1982-06-29 Nec Corp Semiconductor device
US4591760A (en) * 1983-03-25 1986-05-27 Matsushita Electronics Corporation Cathode ray tube apparatus

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51118392A (en) * 1975-04-10 1976-10-18 Matsushita Electric Ind Co Ltd Manuforcturing process for semiconductor unit
JPS5218169A (en) * 1975-08-01 1977-02-10 Nec Corp Production method of semiconductor

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51118392A (en) * 1975-04-10 1976-10-18 Matsushita Electric Ind Co Ltd Manuforcturing process for semiconductor unit
JPS5218169A (en) * 1975-08-01 1977-02-10 Nec Corp Production method of semiconductor

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57104240A (en) * 1980-12-22 1982-06-29 Nec Corp Semiconductor device
US4591760A (en) * 1983-03-25 1986-05-27 Matsushita Electronics Corporation Cathode ray tube apparatus

Also Published As

Publication number Publication date
JPS6210027B2 (en) 1987-03-04

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