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JPS5483377A - Correction method of pattern of photo mask - Google Patents

Correction method of pattern of photo mask

Info

Publication number
JPS5483377A
JPS5483377A JP15057877A JP15057877A JPS5483377A JP S5483377 A JPS5483377 A JP S5483377A JP 15057877 A JP15057877 A JP 15057877A JP 15057877 A JP15057877 A JP 15057877A JP S5483377 A JPS5483377 A JP S5483377A
Authority
JP
Japan
Prior art keywords
mask
emulsion
layer
correction
burnt
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP15057877A
Other languages
Japanese (ja)
Other versions
JPS5616538B2 (en
Inventor
Akira Morishige
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP15057877A priority Critical patent/JPS5483377A/en
Publication of JPS5483377A publication Critical patent/JPS5483377A/en
Publication of JPS5616538B2 publication Critical patent/JPS5616538B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Preparing Plates And Mask In Photomechanical Process (AREA)

Abstract

PURPOSE: To form a photo resist pattern after the emulsion-type mask is burnt and hardened, thereby making it possible to perform desired mask correction.
CONSTITUTION: Emulsion layer 2 on glass plate 1 is burnt at a temperature of 250 to 280°C for 5 to 10 min, applied with photo resist, and developed. Next, mask 3 is used to photoetch layer 2. Without the burning step, layer 2 is etched on its side face, and correction will become difficult. Next, layer 2 is covered with Cr 11 and mask 3 is lifted off; and thus additional pattern 11 is obtained. Photo resist 3 is applied to the burnt emulsion layer 2, and after exposure and developing, resist pattern 3 is formed. Then the emulsion mask is immersed in the bleaching solution and the exposed blackened emulsion portion 11' is selectively made transparent. Next, when mask 3 is removed, erasing correction is achieved. In this way, the pre- treatment by burning makes it practically possible to make correction on the emulsion-type photo mask.
COPYRIGHT: (C)1979,JPO&Japio
JP15057877A 1977-12-16 1977-12-16 Correction method of pattern of photo mask Granted JPS5483377A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15057877A JPS5483377A (en) 1977-12-16 1977-12-16 Correction method of pattern of photo mask

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15057877A JPS5483377A (en) 1977-12-16 1977-12-16 Correction method of pattern of photo mask

Publications (2)

Publication Number Publication Date
JPS5483377A true JPS5483377A (en) 1979-07-03
JPS5616538B2 JPS5616538B2 (en) 1981-04-16

Family

ID=15499936

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15057877A Granted JPS5483377A (en) 1977-12-16 1977-12-16 Correction method of pattern of photo mask

Country Status (1)

Country Link
JP (1) JPS5483377A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH039354A (en) * 1989-06-06 1991-01-17 Dainippon Printing Co Ltd Method for correcting defect of emulsion mask or the like
US6656644B2 (en) 2000-07-07 2003-12-02 Hitachi Ltd. Manufacturing method of photomask and photomask
US6794207B2 (en) 2000-07-07 2004-09-21 Renesas Technology Corp. Method of manufacturing integrated circuit

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6181230A (en) * 1984-09-28 1986-04-24 Yanmar Diesel Engine Co Ltd Automatic tractor control device

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH039354A (en) * 1989-06-06 1991-01-17 Dainippon Printing Co Ltd Method for correcting defect of emulsion mask or the like
US6656644B2 (en) 2000-07-07 2003-12-02 Hitachi Ltd. Manufacturing method of photomask and photomask
US6794207B2 (en) 2000-07-07 2004-09-21 Renesas Technology Corp. Method of manufacturing integrated circuit
US6846598B2 (en) 2000-07-07 2005-01-25 Hitachi, Ltd. Manufacturing method of photomask and photomask
US6902868B2 (en) 2000-07-07 2005-06-07 Renesas Technology Corp. Method of manufacturing integrated circuit
US6936406B2 (en) 2000-07-07 2005-08-30 Renesas Technology Corp. Method of manufacturing integrated circuit
US6958292B2 (en) 2000-07-07 2005-10-25 Renesas Technology Corp. Method of manufacturing integrated circuit

Also Published As

Publication number Publication date
JPS5616538B2 (en) 1981-04-16

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