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JPS5494283A - Production system of semiconductor device - Google Patents

Production system of semiconductor device

Info

Publication number
JPS5494283A
JPS5494283A JP88878A JP88878A JPS5494283A JP S5494283 A JPS5494283 A JP S5494283A JP 88878 A JP88878 A JP 88878A JP 88878 A JP88878 A JP 88878A JP S5494283 A JPS5494283 A JP S5494283A
Authority
JP
Japan
Prior art keywords
marks
substrate
film
patterns
mask
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP88878A
Other languages
Japanese (ja)
Inventor
Okimitsu Yasuda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP88878A priority Critical patent/JPS5494283A/en
Publication of JPS5494283A publication Critical patent/JPS5494283A/en
Pending legal-status Critical Current

Links

Landscapes

  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)

Abstract

PURPOSE: To reduce production period and let the system rapidly adapt itself to switching of types by forming marks indicating types, process instructions, etc. on the main surface edge part of semiconductor substrates and reading said patterns.
CONSTITUTION: Laminated films of a SiO2 film 2 and a photo resist film 10 are formed on a Si substrate 1 and a mask 11 having specified patterns are provided thereon, to which exposure and developing are applied to form patterns on the film 10. Next, with the film 10 as a mask, the substrate 1 is etched to form marks on the substrate 1, at which time the end edge parts of the substrate to be discarded later are beforehand selected for the portions to be formed with the marks. After the marks are formed on the substrate 1 in this way, the marks are scanned thereon by the use of He-Ne laser or the like and the kinds of the marks are identified from the differences in the intensities of the light received owing to reflection and scattering. These facilitate process control and make the system suitable for mass production.
COPYRIGHT: (C)1979,JPO&Japio
JP88878A 1978-01-10 1978-01-10 Production system of semiconductor device Pending JPS5494283A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP88878A JPS5494283A (en) 1978-01-10 1978-01-10 Production system of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP88878A JPS5494283A (en) 1978-01-10 1978-01-10 Production system of semiconductor device

Publications (1)

Publication Number Publication Date
JPS5494283A true JPS5494283A (en) 1979-07-25

Family

ID=11486207

Family Applications (1)

Application Number Title Priority Date Filing Date
JP88878A Pending JPS5494283A (en) 1978-01-10 1978-01-10 Production system of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5494283A (en)

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