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JPS5467792A - Elastic surface wave element - Google Patents

Elastic surface wave element

Info

Publication number
JPS5467792A
JPS5467792A JP13488477A JP13488477A JPS5467792A JP S5467792 A JPS5467792 A JP S5467792A JP 13488477 A JP13488477 A JP 13488477A JP 13488477 A JP13488477 A JP 13488477A JP S5467792 A JPS5467792 A JP S5467792A
Authority
JP
Japan
Prior art keywords
electrodes
input
output transducer
way
surface wave
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP13488477A
Other languages
Japanese (ja)
Other versions
JPS6142891B2 (en
Inventor
Hiroshi Miyama
Nobuaki Furuya
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP13488477A priority Critical patent/JPS5467792A/en
Publication of JPS5467792A publication Critical patent/JPS5467792A/en
Publication of JPS6142891B2 publication Critical patent/JPS6142891B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02535—Details of surface acoustic wave devices
    • H03H9/02818—Means for compensation or elimination of undesirable effects
    • H03H9/02921—Measures for preventing electric discharge due to pyroelectricity
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H3/08—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of resonators or networks using surface acoustic waves
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02228—Guided bulk acoustic wave devices or Lamb wave devices having interdigital transducers situated in parallel planes on either side of a piezoelectric layer
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02535—Details of surface acoustic wave devices
    • H03H9/02543—Characteristics of substrate, e.g. cutting angles
    • H03H9/02574—Characteristics of substrate, e.g. cutting angles of combined substrates, multilayered substrates, piezoelectrical layers on not-piezoelectrical substrate
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02535—Details of surface acoustic wave devices
    • H03H9/02637—Details concerning reflective or coupling arrays
    • H03H9/02653—Grooves or arrays buried in the substrate

Landscapes

  • Physics & Mathematics (AREA)
  • Acoustics & Sound (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)

Abstract

PURPOSE:To prevent the occurrence of electrical short-circuit defects of respective electrodes and increase the scale of integration by forming the electrodes of an input- output transducer alternately through insulator. CONSTITUTION:Only the one-way electrodes 5A, 7A of an input-output transducer are formed on a piezoelectric body 1 and an insulation film 6 is formed over the entire surface on this piezoelectric body 1 and electrodes 5A, 7A. The remaining one-way electrodes 5B, 7B of the input-output transducer are formed on the film 6. Even if any electrically short-circuited portions are caused in the one-way electrodes having been formed first, the electrical short-circuiting with the second electrodes is prevented by the insulator 6.
JP13488477A 1977-11-09 1977-11-09 Elastic surface wave element Granted JPS5467792A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13488477A JPS5467792A (en) 1977-11-09 1977-11-09 Elastic surface wave element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13488477A JPS5467792A (en) 1977-11-09 1977-11-09 Elastic surface wave element

Publications (2)

Publication Number Publication Date
JPS5467792A true JPS5467792A (en) 1979-05-31
JPS6142891B2 JPS6142891B2 (en) 1986-09-24

Family

ID=15138749

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13488477A Granted JPS5467792A (en) 1977-11-09 1977-11-09 Elastic surface wave element

Country Status (1)

Country Link
JP (1) JPS5467792A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09153758A (en) * 1995-09-29 1997-06-10 Toshiba Corp Surface acoustic wave device
JP2008078739A (en) * 2006-09-19 2008-04-03 Fujitsu Media Device Kk Elastic wave device and filter
CN110868181A (en) * 2019-11-29 2020-03-06 清华大学 Thin film material surface acoustic wave device with GS layered electrode and preparation method and application thereof
CN111010126A (en) * 2019-12-12 2020-04-14 无锡市好达电子有限公司 Surface acoustic wave filter structure of layered electrode and preparation method thereof
CN112383288A (en) * 2020-11-16 2021-02-19 清华大学 Temperature-compensated packaging-free surface acoustic wave device and preparation method thereof

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPWO2013108608A1 (en) * 2012-01-20 2015-05-11 パナソニックＩｐマネジメント株式会社 Elastic wave sensor

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09153758A (en) * 1995-09-29 1997-06-10 Toshiba Corp Surface acoustic wave device
JP2008078739A (en) * 2006-09-19 2008-04-03 Fujitsu Media Device Kk Elastic wave device and filter
CN110868181A (en) * 2019-11-29 2020-03-06 清华大学 Thin film material surface acoustic wave device with GS layered electrode and preparation method and application thereof
WO2021103579A1 (en) * 2019-11-29 2021-06-03 清华大学 Thin film material surface acoustic wave device with gs layered electrode, preparation method therefor and use thereof
CN111010126A (en) * 2019-12-12 2020-04-14 无锡市好达电子有限公司 Surface acoustic wave filter structure of layered electrode and preparation method thereof
CN112383288A (en) * 2020-11-16 2021-02-19 清华大学 Temperature-compensated packaging-free surface acoustic wave device and preparation method thereof

Also Published As

Publication number Publication date
JPS6142891B2 (en) 1986-09-24

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