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JPS54131890A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS54131890A
JPS54131890A JP3995378A JP3995378A JPS54131890A JP S54131890 A JPS54131890 A JP S54131890A JP 3995378 A JP3995378 A JP 3995378A JP 3995378 A JP3995378 A JP 3995378A JP S54131890 A JPS54131890 A JP S54131890A
Authority
JP
Japan
Prior art keywords
ratch
emitter
source
schottky diode
channel fet
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP3995378A
Other languages
Japanese (ja)
Other versions
JPS6250985B2 (en
Inventor
Junichi Nakamura
Iwao Yamazaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP3995378A priority Critical patent/JPS54131890A/en
Publication of JPS54131890A publication Critical patent/JPS54131890A/en
Publication of JPS6250985B2 publication Critical patent/JPS6250985B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
    • H01L27/0921—Means for preventing a bipolar, e.g. thyristor, action between the different transistor regions, e.g. Latchup prevention

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE:To avoid the ratch-up by forming the Schottky diode with utilization of the electric wiring of the CMOS circuit. CONSTITUTION:Source or drain electrode 11 of p- and n-channel MOSFET1 and 2 is made use of the provide Schottky diode DS near electrode 11 to connect between the emitter and the base of parasitic bipolar transistors Tr1-Tr4. Thus, the emitter- earthed current amplification factor is reduced greatly to prevent occurrence of the ratch-up. Generally, in case the P layer of about 10<16>cm<-3> is formed on the N-type substrate of about 1015cm<-3>, Al, W, Ti, Pi or the like is used for DS in a simple formation. Such DS has only to be provided to either one of the parasitic transistors. The effect is especially remarkable if DS is provided to the drain of p-channel FET or the source of n-channel FET.
JP3995378A 1978-04-05 1978-04-05 Semiconductor device Granted JPS54131890A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3995378A JPS54131890A (en) 1978-04-05 1978-04-05 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3995378A JPS54131890A (en) 1978-04-05 1978-04-05 Semiconductor device

Publications (2)

Publication Number Publication Date
JPS54131890A true JPS54131890A (en) 1979-10-13
JPS6250985B2 JPS6250985B2 (en) 1987-10-28

Family

ID=12567314

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3995378A Granted JPS54131890A (en) 1978-04-05 1978-04-05 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS54131890A (en)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5712547A (en) * 1980-06-27 1982-01-22 Oki Electric Ind Co Ltd Semiconductor device
JPS57500400A (en) * 1980-04-07 1982-03-04
JPS57177554A (en) * 1981-04-27 1982-11-01 Hitachi Ltd Semiconductor integrated circuit device
JPS5933848A (en) * 1982-08-19 1984-02-23 Sanyo Electric Co Ltd Semiconductor integrated circuit
JPS6411359A (en) * 1987-07-03 1989-01-13 Yamaha Corp Integrated circuit device
JPH05198764A (en) * 1991-09-19 1993-08-06 Internatl Business Mach Corp <Ibm> Silicide interconnection structure by schottky-barrier-diode separation
JPH0955439A (en) * 1995-08-16 1997-02-25 Nec Corp Semiconductor device and its manufacturing method

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10732714B2 (en) 2017-05-08 2020-08-04 Cirrus Logic, Inc. Integrated haptic system
US11259121B2 (en) 2017-07-21 2022-02-22 Cirrus Logic, Inc. Surface speaker
US10455339B2 (en) 2018-01-19 2019-10-22 Cirrus Logic, Inc. Always-on detection systems
US10620704B2 (en) 2018-01-19 2020-04-14 Cirrus Logic, Inc. Haptic output systems
US11139767B2 (en) 2018-03-22 2021-10-05 Cirrus Logic, Inc. Methods and apparatus for driving a transducer
US10795443B2 (en) 2018-03-23 2020-10-06 Cirrus Logic, Inc. Methods and apparatus for driving a transducer
US10820100B2 (en) 2018-03-26 2020-10-27 Cirrus Logic, Inc. Methods and apparatus for limiting the excursion of a transducer
US10667051B2 (en) 2018-03-26 2020-05-26 Cirrus Logic, Inc. Methods and apparatus for limiting the excursion of a transducer
US10832537B2 (en) 2018-04-04 2020-11-10 Cirrus Logic, Inc. Methods and apparatus for outputting a haptic signal to a haptic transducer
US11069206B2 (en) 2018-05-04 2021-07-20 Cirrus Logic, Inc. Methods and apparatus for outputting a haptic signal to a haptic transducer
US11269415B2 (en) 2018-08-14 2022-03-08 Cirrus Logic, Inc. Haptic output systems
GB201817495D0 (en) 2018-10-26 2018-12-12 Cirrus Logic Int Semiconductor Ltd A force sensing system and method
US20200313529A1 (en) 2019-03-29 2020-10-01 Cirrus Logic International Semiconductor Ltd. Methods and systems for estimating transducer parameters
US11644370B2 (en) 2019-03-29 2023-05-09 Cirrus Logic, Inc. Force sensing with an electromagnetic load
US10828672B2 (en) 2019-03-29 2020-11-10 Cirrus Logic, Inc. Driver circuitry
US10992297B2 (en) 2019-03-29 2021-04-27 Cirrus Logic, Inc. Device comprising force sensors
US10726683B1 (en) 2019-03-29 2020-07-28 Cirrus Logic, Inc. Identifying mechanical impedance of an electromagnetic load using a two-tone stimulus
US11509292B2 (en) 2019-03-29 2022-11-22 Cirrus Logic, Inc. Identifying mechanical impedance of an electromagnetic load using least-mean-squares filter
US11150733B2 (en) 2019-06-07 2021-10-19 Cirrus Logic, Inc. Methods and apparatuses for providing a haptic output signal to a haptic actuator
US10976825B2 (en) 2019-06-07 2021-04-13 Cirrus Logic, Inc. Methods and apparatuses for controlling operation of a vibrational output system and/or operation of an input sensor system
US11408787B2 (en) 2019-10-15 2022-08-09 Cirrus Logic, Inc. Control methods for a force sensor system
US11380175B2 (en) 2019-10-24 2022-07-05 Cirrus Logic, Inc. Reproducibility of haptic waveform
US11545951B2 (en) 2019-12-06 2023-01-03 Cirrus Logic, Inc. Methods and systems for detecting and managing amplifier instability
US11908310B2 (en) 2021-06-22 2024-02-20 Cirrus Logic Inc. Methods and systems for detecting and managing unexpected spectral content in an amplifier system
US11552649B1 (en) 2021-12-03 2023-01-10 Cirrus Logic, Inc. Analog-to-digital converter-embedded fixed-phase variable gain amplifier stages for dual monitoring paths

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51132976A (en) * 1975-05-14 1976-11-18 Fujitsu Ltd Semiconductor device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51132976A (en) * 1975-05-14 1976-11-18 Fujitsu Ltd Semiconductor device

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57500400A (en) * 1980-04-07 1982-03-04
JPS5712547A (en) * 1980-06-27 1982-01-22 Oki Electric Ind Co Ltd Semiconductor device
JPS57177554A (en) * 1981-04-27 1982-11-01 Hitachi Ltd Semiconductor integrated circuit device
JPS5933848A (en) * 1982-08-19 1984-02-23 Sanyo Electric Co Ltd Semiconductor integrated circuit
JPS6411359A (en) * 1987-07-03 1989-01-13 Yamaha Corp Integrated circuit device
JPH05198764A (en) * 1991-09-19 1993-08-06 Internatl Business Mach Corp <Ibm> Silicide interconnection structure by schottky-barrier-diode separation
JPH0955439A (en) * 1995-08-16 1997-02-25 Nec Corp Semiconductor device and its manufacturing method
US6147386A (en) * 1995-08-16 2000-11-14 Nec Corporation Semiconductor device and method of producing the same

Also Published As

Publication number Publication date
JPS6250985B2 (en) 1987-10-28

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