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JPS5438779A - Semiconductor integrated circuit device - Google Patents

Semiconductor integrated circuit device

Info

Publication number
JPS5438779A
JPS5438779A JP10559777A JP10559777A JPS5438779A JP S5438779 A JPS5438779 A JP S5438779A JP 10559777 A JP10559777 A JP 10559777A JP 10559777 A JP10559777 A JP 10559777A JP S5438779 A JPS5438779 A JP S5438779A
Authority
JP
Japan
Prior art keywords
integrated circuit
semiconductor integrated
type region
circuit device
parasitic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10559777A
Other languages
Japanese (ja)
Inventor
Kazutoshi Kamibayashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP10559777A priority Critical patent/JPS5438779A/en
Publication of JPS5438779A publication Critical patent/JPS5438779A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
    • H01L27/0744—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common without components of the field effect type
    • H01L27/075—Bipolar transistors in combination with diodes, or capacitors, or resistors, e.g. lateral bipolar transistor, and vertical bipolar transistor and resistor
    • H01L27/0755—Vertical bipolar transistor in combination with diodes, or capacitors, or resistors
    • H01L27/0761—Vertical bipolar transistor in combination with diodes only
    • H01L27/0766—Vertical bipolar transistor in combination with diodes only with Schottky diodes only

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Bipolar Integrated Circuits (AREA)

Abstract

PURPOSE:To reduce the parasitic effect of parasitic PNP transistors by providing a high concentration N type region or second P type region in a semiconductor integrated circuit having a Schottky barrier diode and a P type region within the insulated N type region.
JP10559777A 1977-09-01 1977-09-01 Semiconductor integrated circuit device Pending JPS5438779A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10559777A JPS5438779A (en) 1977-09-01 1977-09-01 Semiconductor integrated circuit device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10559777A JPS5438779A (en) 1977-09-01 1977-09-01 Semiconductor integrated circuit device

Publications (1)

Publication Number Publication Date
JPS5438779A true JPS5438779A (en) 1979-03-23

Family

ID=14411899

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10559777A Pending JPS5438779A (en) 1977-09-01 1977-09-01 Semiconductor integrated circuit device

Country Status (1)

Country Link
JP (1) JPS5438779A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55127057A (en) * 1979-03-26 1980-10-01 Hitachi Ltd Semiconductor device and semiconductor circuit device
US5023482A (en) * 1982-03-29 1991-06-11 North American Philips Corp. ISL to TTL translator

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55127057A (en) * 1979-03-26 1980-10-01 Hitachi Ltd Semiconductor device and semiconductor circuit device
US5023482A (en) * 1982-03-29 1991-06-11 North American Philips Corp. ISL to TTL translator

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