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JPS54121072A - Charge transfer device - Google Patents

Charge transfer device

Info

Publication number
JPS54121072A
JPS54121072A JP2896378A JP2896378A JPS54121072A JP S54121072 A JPS54121072 A JP S54121072A JP 2896378 A JP2896378 A JP 2896378A JP 2896378 A JP2896378 A JP 2896378A JP S54121072 A JPS54121072 A JP S54121072A
Authority
JP
Japan
Prior art keywords
electrode
layer
electrodes
floating diffusion
transfer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2896378A
Other languages
Japanese (ja)
Inventor
Yasuo Ishihara
Hidetsugu Oda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP2896378A priority Critical patent/JPS54121072A/en
Publication of JPS54121072A publication Critical patent/JPS54121072A/en
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
    • G11C19/28—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements
    • G11C19/282—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements with charge storage in a depletion layer, i.e. charge coupled devices [CCD]
    • G11C19/285—Peripheral circuits, e.g. for writing into the first stage; for reading-out of the last stage
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/762—Charge transfer devices
    • H01L29/765—Charge-coupled devices
    • H01L29/768—Charge-coupled devices with field effect produced by an insulated gate
    • H01L29/76816—Output structures

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Solid State Image Pick-Up Elements (AREA)

Abstract

PURPOSE:To reduce the combination length between the floating diffusion layer and the transfer channel and then to improve the SN ratio by decreasing the width of the transfer path at the storage region with installation of the gate electrode containing the barrier region and the storage region to the transfer direction between the floating diffusion layer and the final electrode of the charge transfer path. CONSTITUTION:Electrodes 12-19 are attached to plural charge transfer paths 11, and electrodes 12, 14, 16 and 18 are connected to transfer pulse line 20. At the same time, electrodes 13, 15, 17 and 19 are connected to line 21. Then gate electrode 22, which features a narrow width and DC-biased touching final electrode 18 and 19, is provided, and floating diffusion layer 23 featuring a larger width than electrode 22 and possessing the PN junction between the substrate and electrode 22 is formed touching electrode 22. After this, reset gate electrode 24 to set the reference potential plus reset drain electrode 25 to supply the reference potential are provided to layer 23. The potential change of layer 23 is detected by gate 27 of MOSFET26 provided to the same substrate. In such constitution, the combination capacity is reduce between electrode 22 and layer 23, enhancing the output.
JP2896378A 1978-03-13 1978-03-13 Charge transfer device Pending JPS54121072A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2896378A JPS54121072A (en) 1978-03-13 1978-03-13 Charge transfer device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2896378A JPS54121072A (en) 1978-03-13 1978-03-13 Charge transfer device

Publications (1)

Publication Number Publication Date
JPS54121072A true JPS54121072A (en) 1979-09-19

Family

ID=12263060

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2896378A Pending JPS54121072A (en) 1978-03-13 1978-03-13 Charge transfer device

Country Status (1)

Country Link
JP (1) JPS54121072A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5994870A (en) * 1982-11-22 1984-05-31 Nec Corp Charge transfer element
JPS61198676A (en) * 1985-02-27 1986-09-03 Nec Corp Semiconductor integrated circuit device
FR2597647A1 (en) * 1986-04-18 1987-10-23 Thomson Csf LOAD TRANSFER SHIFTING REGISTER WITH FLOATING DIODE VOLTAGE READ DEVICE

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4853683A (en) * 1971-11-04 1973-07-27

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4853683A (en) * 1971-11-04 1973-07-27

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5994870A (en) * 1982-11-22 1984-05-31 Nec Corp Charge transfer element
JPS61198676A (en) * 1985-02-27 1986-09-03 Nec Corp Semiconductor integrated circuit device
JPH055179B2 (en) * 1985-02-27 1993-01-21 Nippon Electric Co
FR2597647A1 (en) * 1986-04-18 1987-10-23 Thomson Csf LOAD TRANSFER SHIFTING REGISTER WITH FLOATING DIODE VOLTAGE READ DEVICE
US4839911A (en) * 1986-04-18 1989-06-13 Thomson-Lsf Charger transfer shift register with voltage sensing device using a floating-potential diode

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