[go: up one dir, main page]
More Web Proxy on the site http://driver.im/

JPS5489583A - Junction type field effect transistor device - Google Patents

Junction type field effect transistor device

Info

Publication number
JPS5489583A
JPS5489583A JP15883777A JP15883777A JPS5489583A JP S5489583 A JPS5489583 A JP S5489583A JP 15883777 A JP15883777 A JP 15883777A JP 15883777 A JP15883777 A JP 15883777A JP S5489583 A JPS5489583 A JP S5489583A
Authority
JP
Japan
Prior art keywords
gate
region
substrate
field effect
effect transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP15883777A
Other languages
Japanese (ja)
Inventor
Shuji Kanamori
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP15883777A priority Critical patent/JPS5489583A/en
Publication of JPS5489583A publication Critical patent/JPS5489583A/en
Pending legal-status Critical Current

Links

Landscapes

  • Junction Field-Effect Transistors (AREA)

Abstract

PURPOSE: To avoid the reduction in thermal noise, by increasing the nutual conductance and reducing the gate diffusion resistor without lowering the thersehold voltage and the reverse voltage, through electrical shortening the gate region and the substrate electrically at the channel region.
CONSTITUTION: At the X-X' cross section, the part between the gate 4 and the substrate 1 is shortened with the substrate 1 with the region enclosing the drain 5, source 6 and gate 4 from the substrate pick up region 3 and the gate 4 on the channel region 2. Accordingly, from the gate and substrate shortening region to the gate present at the region 3, one gate width z' remains, and the gate diffusion resistor is made a half the conventional devices and the noise voltage can be reduced.
COPYRIGHT: (C)1979,JPO&Japio
JP15883777A 1977-12-27 1977-12-27 Junction type field effect transistor device Pending JPS5489583A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15883777A JPS5489583A (en) 1977-12-27 1977-12-27 Junction type field effect transistor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15883777A JPS5489583A (en) 1977-12-27 1977-12-27 Junction type field effect transistor device

Publications (1)

Publication Number Publication Date
JPS5489583A true JPS5489583A (en) 1979-07-16

Family

ID=15680472

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15883777A Pending JPS5489583A (en) 1977-12-27 1977-12-27 Junction type field effect transistor device

Country Status (1)

Country Link
JP (1) JPS5489583A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59193072A (en) * 1984-03-28 1984-11-01 Sanyo Electric Co Ltd Junction type field effect transistor
JPS6066867A (en) * 1983-09-24 1985-04-17 Fujitsu Ltd Junction type fet

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6066867A (en) * 1983-09-24 1985-04-17 Fujitsu Ltd Junction type fet
JPS59193072A (en) * 1984-03-28 1984-11-01 Sanyo Electric Co Ltd Junction type field effect transistor

Similar Documents

Publication Publication Date Title
JPS5368581A (en) Semiconductor device
JPS5422781A (en) Insulator gate protective semiconductor device
JPS5489583A (en) Junction type field effect transistor device
UST964009I4 (en) High voltage semiconductor structure
JPS52117586A (en) Semiconductor device
JPS54136275A (en) Field effect transistor of isolation gate
JPS53149771A (en) Mis-type semiconductor device and its manufacture
JPS5469388A (en) Junction type field effect semiconductor device and its production
JPS5491074A (en) Semiconductor device
JPS5627969A (en) Mos semiconductor device
JPS5516480A (en) Insulating gate electrostatic effect transistor and semiconductor integrated circuit device
JPS5436189A (en) Semiconductor device
JPS5489584A (en) Junction type field effect semiconductor device
JPS5772386A (en) Junction type field-effect semiconductor device
JPS5366179A (en) Semiconductor device
JPS5364480A (en) Field effect semiconductor device
JPS5772388A (en) Junction type field-effect semiconductor device and its manufacdure
JPS5489582A (en) Junction type field effect transistor
JPS53137677A (en) Junction type field effect transistor and its manufacture
JPS6439065A (en) Thin film field-effect transistor
JPS5464982A (en) Junction-type field effect semiconductor device and its manufacture
JPS5586163A (en) Mis semiconductor device
JPS5358780A (en) Field effect type transistor
JPS5577177A (en) Mos type semiconductor device
JPS6461059A (en) Semiconductor device