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JPS5412684A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS5412684A
JPS5412684A JP7867377A JP7867377A JPS5412684A JP S5412684 A JPS5412684 A JP S5412684A JP 7867377 A JP7867377 A JP 7867377A JP 7867377 A JP7867377 A JP 7867377A JP S5412684 A JPS5412684 A JP S5412684A
Authority
JP
Japan
Prior art keywords
manufacture
semiconductor device
metal
film
insulator film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP7867377A
Other languages
Japanese (ja)
Other versions
JPS588144B2 (en
Inventor
Takashi Ito
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP7867377A priority Critical patent/JPS588144B2/en
Publication of JPS5412684A publication Critical patent/JPS5412684A/en
Publication of JPS588144B2 publication Critical patent/JPS588144B2/en
Expired legal-status Critical Current

Links

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

PURPOSE: To increase the adhesion between the insulator film and the metal film by irradiating the ion on the surface of the metal film pattern which is formed on the substrate via an insulator film and then injecting part of the metal to the insulator film.
COPYRIGHT: (C)1979,JPO&Japio
JP7867377A 1977-06-30 1977-06-30 Manufacturing method of semiconductor device Expired JPS588144B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7867377A JPS588144B2 (en) 1977-06-30 1977-06-30 Manufacturing method of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7867377A JPS588144B2 (en) 1977-06-30 1977-06-30 Manufacturing method of semiconductor device

Publications (2)

Publication Number Publication Date
JPS5412684A true JPS5412684A (en) 1979-01-30
JPS588144B2 JPS588144B2 (en) 1983-02-14

Family

ID=13668373

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7867377A Expired JPS588144B2 (en) 1977-06-30 1977-06-30 Manufacturing method of semiconductor device

Country Status (1)

Country Link
JP (1) JPS588144B2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4597163A (en) * 1984-12-21 1986-07-01 Zilog, Inc. Method of improving film adhesion between metallic silicide and polysilicon in thin film integrated circuit structures

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4597163A (en) * 1984-12-21 1986-07-01 Zilog, Inc. Method of improving film adhesion between metallic silicide and polysilicon in thin film integrated circuit structures

Also Published As

Publication number Publication date
JPS588144B2 (en) 1983-02-14

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