JPH11509049A - 高アスペクト比を有するコンタクトホールに平坦な配線膜及びプラグを形成する改善された成膜装置及び成膜方法 - Google Patents
高アスペクト比を有するコンタクトホールに平坦な配線膜及びプラグを形成する改善された成膜装置及び成膜方法Info
- Publication number
- JPH11509049A JPH11509049A JP9538711A JP53871197A JPH11509049A JP H11509049 A JPH11509049 A JP H11509049A JP 9538711 A JP9538711 A JP 9538711A JP 53871197 A JP53871197 A JP 53871197A JP H11509049 A JPH11509049 A JP H11509049A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- target
- film
- contact hole
- bias
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 title claims abstract description 58
- 239000000758 substrate Substances 0.000 claims abstract description 171
- 230000015572 biosynthetic process Effects 0.000 claims abstract description 33
- 238000005530 etching Methods 0.000 claims abstract description 9
- 239000013077 target material Substances 0.000 claims abstract description 9
- 239000002245 particle Substances 0.000 claims description 58
- 238000004544 sputter deposition Methods 0.000 claims description 57
- 239000000463 material Substances 0.000 claims description 56
- 238000000151 deposition Methods 0.000 claims description 28
- 230000008021 deposition Effects 0.000 claims description 25
- 150000002500 ions Chemical class 0.000 claims description 22
- 230000008569 process Effects 0.000 claims description 15
- 230000000903 blocking effect Effects 0.000 claims description 5
- 239000011800 void material Substances 0.000 claims description 4
- 238000010009 beating Methods 0.000 claims 1
- 239000011248 coating agent Substances 0.000 claims 1
- 238000000576 coating method Methods 0.000 claims 1
- 238000003825 pressing Methods 0.000 claims 1
- 238000010079 rubber tapping Methods 0.000 claims 1
- 239000010408 film Substances 0.000 description 83
- 235000012431 wafers Nutrition 0.000 description 19
- 230000002093 peripheral effect Effects 0.000 description 16
- 239000010936 titanium Substances 0.000 description 11
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 10
- 229910052719 titanium Inorganic materials 0.000 description 10
- 238000012545 processing Methods 0.000 description 9
- 239000010409 thin film Substances 0.000 description 9
- 238000004519 manufacturing process Methods 0.000 description 8
- 229910052751 metal Inorganic materials 0.000 description 8
- 239000002184 metal Substances 0.000 description 8
- 239000012495 reaction gas Substances 0.000 description 7
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 6
- 230000007423 decrease Effects 0.000 description 6
- 230000004907 flux Effects 0.000 description 6
- 230000006870 function Effects 0.000 description 6
- 238000005259 measurement Methods 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 5
- 238000002474 experimental method Methods 0.000 description 5
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 229910052786 argon Inorganic materials 0.000 description 3
- 230000004888 barrier function Effects 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 230000010354 integration Effects 0.000 description 3
- 238000005240 physical vapour deposition Methods 0.000 description 3
- 238000002310 reflectometry Methods 0.000 description 3
- 229910052721 tungsten Inorganic materials 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 239000000523 sample Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- 235000014036 Castanea Nutrition 0.000 description 1
- 241001070941 Castanea Species 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000005513 bias potential Methods 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 238000013507 mapping Methods 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 238000000992 sputter etching Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/04—Coating on selected surface areas, e.g. using masks
- C23C14/046—Coating cavities or hollow spaces, e.g. interior of tubes; Infiltration of porous substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
- H01L21/2855—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table by physical means, e.g. sputtering, evaporation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76841—Barrier, adhesion or liner layers
- H01L21/76843—Barrier, adhesion or liner layers formed in openings in a dielectric
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
- Electrodes Of Semiconductors (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US63829096A | 1996-04-26 | 1996-04-26 | |
| US08/638,290 | 1996-04-26 | ||
| PCT/IB1997/000522 WO1997041598A1 (fr) | 1996-04-26 | 1997-04-15 | Appareil et procede permettant un depot ameliore de couches minces de revetement et de fiches conformes dans des contacts a fort allongement |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH11509049A true JPH11509049A (ja) | 1999-08-03 |
Family
ID=24559418
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP9538711A Pending JPH11509049A (ja) | 1996-04-26 | 1997-04-15 | 高アスペクト比を有するコンタクトホールに平坦な配線膜及びプラグを形成する改善された成膜装置及び成膜方法 |
Country Status (7)
| Country | Link |
|---|---|
| EP (1) | EP0843890A1 (fr) |
| JP (1) | JPH11509049A (fr) |
| KR (1) | KR19990028451A (fr) |
| AU (1) | AU2400497A (fr) |
| CA (1) | CA2225446A1 (fr) |
| TW (1) | TW417223B (fr) |
| WO (1) | WO1997041598A1 (fr) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005082873A (ja) * | 2003-09-10 | 2005-03-31 | Applied Materials Inc | 膜形成方法 |
| JP2011500967A (ja) * | 2007-10-26 | 2011-01-06 | オーツェー・エリコン・バルザース・アーゲー | ３次元半導体パッケージングにおける貫通シリコンビアのメタライゼーションへのｈｉｐｉｍｓの適用 |
| JP2012506638A (ja) * | 2008-10-22 | 2012-03-15 | アプライド マテリアルズ インコーポレイテッド | 強化された銅のイオン化を伴うｐｖｄ銅シードオーバーハング再スパッタ |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2002007198A2 (fr) * | 2000-07-18 | 2002-01-24 | Applied Materials, Inc. | Depot de films de tantale de faible contrainte |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4925542A (en) * | 1988-12-08 | 1990-05-15 | Trw Inc. | Plasma plating apparatus and method |
| KR960026261A (ko) * | 1994-12-14 | 1996-07-22 | 제임스 조셉 드롱 | 재 도입형 콘택 홀을 피복시키거나 또는 충진시키기 위한 방법 및 장치 |
-
1997
- 1997-04-15 EP EP97919587A patent/EP0843890A1/fr not_active Withdrawn
- 1997-04-15 WO PCT/IB1997/000522 patent/WO1997041598A1/fr not_active Application Discontinuation
- 1997-04-15 AU AU24004/97A patent/AU2400497A/en not_active Abandoned
- 1997-04-15 CA CA002225446A patent/CA2225446A1/fr not_active Abandoned
- 1997-04-15 KR KR1019970709767A patent/KR19990028451A/ko active IP Right Grant
- 1997-04-15 JP JP9538711A patent/JPH11509049A/ja active Pending
- 1997-04-23 TW TW086105261A patent/TW417223B/zh active
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005082873A (ja) * | 2003-09-10 | 2005-03-31 | Applied Materials Inc | 膜形成方法 |
| JP2011500967A (ja) * | 2007-10-26 | 2011-01-06 | オーツェー・エリコン・バルザース・アーゲー | ３次元半導体パッケージングにおける貫通シリコンビアのメタライゼーションへのｈｉｐｉｍｓの適用 |
| JP2012506638A (ja) * | 2008-10-22 | 2012-03-15 | アプライド マテリアルズ インコーポレイテッド | 強化された銅のイオン化を伴うｐｖｄ銅シードオーバーハング再スパッタ |
Also Published As
| Publication number | Publication date |
|---|---|
| KR19990028451A (ko) | 1999-04-15 |
| TW417223B (en) | 2001-01-01 |
| AU2400497A (en) | 1997-11-19 |
| WO1997041598A1 (fr) | 1997-11-06 |
| CA2225446A1 (fr) | 1997-11-06 |
| EP0843890A1 (fr) | 1998-05-27 |
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