JPH11269643A - Deposition apparatus and deposition method using the same - Google Patents

Abstract

PROBLEM TO BE SOLVED: To obtain a film which is highly crystallized without heating a substrate to a high temp. and into which reactive gases, such as oxygen, are sufficiently taken, by disposing an ionization energy supplying means capable of independently controlling energy supply between the target material and substrate holding part of a deposition apparatus by a sputtering method. SOLUTION: The substrate 12 and a target 15 (TiO2 ) are respectively installed at holding sections 13, 16 and thereafter the inside of a sputtering chamber is evacuated and only the gaseous Ar is introduced therein to form a plasma and to execute cleaning. The plasma energy supplying means including a coil 181 functions as an Ar ions forming source for cleaning. The shutter between the substrate 12 and the coil 181 is thereafter closed and the electric power supply from power sources 14, 17 is stopped. A gaseous mixture composed of Ar and oxygen is then introduced from a gas introducing port 22 and after the pressure in a vacuum vessel is regulated, the plasma ionization state in the coil 181 is regulated by a power source 19 and the deposition is executed by opening the shutter after making of the prescribed electric power from the power source 17 and making of RF electric power from the power source 12.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a film forming apparatus and a film forming method by sputtering, and more particularly to a method of causing particles emitted from a target material to collide with electrons or ions in plasma by passing through a plasma region. By
The present invention relates to a film forming apparatus and a film forming method for promoting ionization of particles.

[0002]

2. Description of the Related Art A target is a material containing constituent elements of a film to be formed, and ionized ions in a plasma state collide with the target to release particles of the material constituting the target material and deposit the particles on a substrate. (Hereinafter, this film forming method is referred to as a sputtering method)
For, many technologies have already been developed and are known.

In order to avoid the problem of charge-up when a material having low conductivity is formed, an RF
A method of supplying (radio frequency) power to a target is widely used. There is also known a method of increasing the plasma density by generating a magnetic field on the surface of the target, thereby increasing the film formation rate.

[0004] Reactive sputtering is known for oxides and nitrides composed of a plurality of constituent elements, of which the-element can be introduced in a gaseous state.

In this method, a target material having excellent conductivity such as a metal is used to supply power by a DC bias to discharge particles from the target, and to react with a component element supplied in a gaseous state during deposition. The film is formed while the film is formed. In the above method, plasma is generated by directly supplying power to the target, but a method of separately providing a plasma supply source and sputtering the target is also known. For example, an ECR (Electron Cycro-tron Resonance) plasma that can generate high-density plasma under low pressure is known as an ECR sputtering method. The ΕCR sputtering method is a method of performing sputtering by irradiating a plasma generated by に て CR to a target, and performing film formation at a low pressure, generating plasma separately from the target, and facing the target and a film formation substrate. It has features such as being able to form a film without performing it.

When a material such as a metal oxide is formed by a sputtering method, an amorphous thin film is often formed unless the substrate is sufficiently heated. An amorphous film may be used as long as the generated film is used as an insulating film as typified by silicon oxide.However, in a case where physical properties due to crystallinity such as piezoelectricity or pyroelectricity are to be used. It is important that the thin film has good crystallinity.

For example, when a material such as titanium oxide is formed into a film, in order to obtain a thin film having sufficient crystallinity,
It is necessary to heat the substrate to 500 ° C. or higher.

[0008] However, the need to heat the substrate imposes restrictions on the materials that can be used as the substrate and the structure of the device. Therefore, it is desirable that crystallization can be performed by a method other than heating the substrate.

In the reactive sputtering method, since a material having excellent conductivity such as a metal is used as a target material, there is no problem of electrification. Therefore, sputtering by a DC power supply is possible. However, even when a material such as a metal is used, when oxygen in the atmosphere reaches the target side and forms an oxide skin on the target, the oxide skin forms a layer with low conductivity. Therefore, charging may be caused. For this reason, it is necessary to suppress the arrival of oxygen atoms to the vicinity of the target and make it difficult to form an oxide skin.

When a metal oxide film is formed,
Oxygen may not be sufficiently incorporated into the film. In metal oxides, in general, a composition deviation from the stoichiometric ratio causes a change in characteristics. In particular, an insufficient amount of oxygen, even if the amount is small, has an effect on physical properties such as a decrease in insulation.

Therefore, as a method of more actively working oxygen into the thin film, a method of using O ₃ or N ₂ O, which is more active than O ₂ , has been taken, but it is by no means sufficient. Thus, a better way to address oxygen in thin films is desired.

Further, since the sputtering method is a physical deposition method utilizing an ionized state, in a sputtering apparatus, it is particularly necessary to dispose a member for providing a new function to a portion between a target and a substrate. With difficult problems. In other words, if a member is disposed at this portion and sputtering is performed, not only is the target sputtered and film-forming particles are emitted, but also the disposed member is sputtered, so that components of the member are mixed as impurities into the thin film. Would. For example, when zinc oxide is formed, if a member made of aluminum is arranged, aluminum is mixed into the zinc oxide film as an impurity. Since the valence of aluminum ion is different from that of zinc ion, the characteristics of the formed film are greatly changed.

[0013]

As described above, in order to obtain a crystalline thin film by the sputtering method, it is necessary to heat the substrate to a high temperature. There is a problem that restrictions are imposed on materials and device structures that can be used as a device.

In the reactive sputtering method, there is a problem that oxygen in the atmosphere reaches the target side to form an oxide skin and cause charging.

Further, when a metal oxide film is formed, there is also a problem that oxygen is not sufficiently taken into the film and a film having a composition deviated from the stoichiometric ratio is formed, which causes a decrease in insulation. .

Further, when a member is provided between the target and the substrate of the sputtering apparatus to provide a new function, this member is also sputtered, and the components of the member are mixed as impurities into the thin film. There is also.

The present invention has been made in order to solve such a conventional problem, and an object of the present invention is to provide a film forming apparatus and a film forming method which do not have the above problem.

[0018]

According to a first aspect of the present invention, there is provided a film forming apparatus comprising: a target material made of a material containing at least a constituent element of a film to be formed; In a film forming apparatus having an energy particle supply unit configured to release particles of a constituent component of the target material from the surface of the target material, independently controlling supply of energy between the target material and the substrate holding unit. It is characterized in that an ionizing energy supply means is provided.

As an energy particle supply means for releasing particles of the constituents of the target material from the surface of the target material, argon ions are generally used, but krypton ions and other ions can also be used.

As the ionization energy control means, a single-turn coil that can reduce the distance between the target and the substrate is suitable, but a solenoid coil can also be used.

As a power source applied to the target material, the substrate, and the ionization energy control means, an alternating current (or an alternating current obtained by superimposing a direct current) is used. These phases may be synchronized or the phases may be different. May be applied.

According to a second aspect of the present invention, in the film forming apparatus of the first aspect, the ionization energy supply means includes a gas or liquid introduction means as a plasma generating material.

According to a third aspect of the present invention, in the film forming apparatus of the first or second aspect, the ionizing energy supply means is covered with a material containing a constituent element of a film to be formed. Features.

According to a fourth aspect of the present invention, in the film forming apparatus, an AC power supply is applied to the target material, the substrate holder, and the energetic particle supply means in a synchronized phase or arbitrarily controlled in phase. It is characterized by being performed.

According to a fifth aspect of the present invention, in the film forming method of the first aspect, the ionizing energy supply means includes:
It is characterized in that it is arranged near the target material.

According to a sixth aspect of the present invention, in the film forming method of the first aspect, the ionization energy supply means is disposed near the substrate. It is characterized by being arranged near the substrate.

[0027] According to a seventh aspect of the present invention, in the film forming method, ionized ions collide with a target material made of a material containing at least the constituent elements of the film to be formed, thereby releasing particles made of the components constituting the target material. A method of forming a film by depositing the particles on a substrate, forming a plasma region between the target material and the substrate, and passing particles emitted from the target material through the plasma region to generate electrons in plasma. Alternatively, the ionization of the particles is promoted by colliding with ions. The film forming method according to claim 8 is the film forming method according to claim 7,
As a constituent element of the plasma, a constituent element of a film to be formed is used, and a film is formed by a constituent element of the target material and a constituent element of the plasma.

According to a ninth aspect of the present invention, in the film forming method of the seventh or eighth aspect, electrons or ions emitted from the plasma region are caused to collide with the target material and / or the substrate. Cleaning the target material and / or the substrate.

The present invention relates to TiO ₂ , Ta ₂ O ₅ , IT
It is suitable for manufacturing oxides such as O and ZrO, nitrides such as TiN and SiN, oxynitrides such as SIALON, and oxide superconductors such as YBCO.

(Operation) Next, the operation of the present invention will be described.

According to the present invention, an ionizing energy supply means capable of independently controlling the supply of energy is provided between the target material and the substrate holding section, and a high-density plasma region is independently formed in the section. Can be.

The presence of the high-density plasma region causes (1) particles emitted from the target to be miniaturized due to collision with ions and to be highly ionized while passing through the plasma region, and to be highly ionized on the substrate. Thus, a defect-free film which is highly crystallized at a low temperature can be formed.

(2) By forming a plasma region with a plasma of a reactive gas such as oxygen, particularly in the vicinity of the substrate, by forming an active state, a film having sufficient electric characteristics in which oxygen or the like is sufficiently incorporated is formed. Becomes possible. The activated reactive gas is not only sufficiently supplied during the crystal growth on the outermost surface of the thin film, but also can compensate for defects such as oxygen generated in the thin film. In particular, T
When a highly oxidizable material such as i or Ta is used, there is an effect of improving the film quality.

(3) Since the plasma region is formed from an energy source different from the target such as an inductively-coupled high-frequency discharge, particles emitted from the target collide with many particles in the process of passing through the plasma region. By doing so, the energy distribution of each particle can be adjusted, and since the sheath voltage can be controlled, it is possible to irradiate the substrate surface, particularly to control the energy of ions. In addition, the plasma potential can be controlled to an appropriate level by the inductively coupled plasma, and the ozone energy of the film-forming particles passing therethrough can be controlled. By controlling the energy of the particles to an appropriate size, migration on the substrate surface is promoted, and a film having high crystallinity and high density can be obtained. Furthermore, even if a component having a high vapor pressure is contained in the film-forming material (and an intermediate product during the film-forming), the adhesion time on the substrate during the film growth can be extended by optimizing the energy of the particles, A film with less composition deviation can be formed.

Further, the following effects can be obtained by disposing the ionization energy control means close to the target material or the substrate.

(A) Arranging the ionization energy control means near the target material Since Ar ions can be supplied even at a low pressure, high-concentration plasma can be supplied to the target surface.
Therefore, in order to expect such an effect that a film can be formed even in a pressure region where it is difficult to maintain the discharge only by supplying power to the target, when the distance between the target material and the substrate is set to 1, the distance from the target material becomes 1 It is preferable to dispose the ionization energy control means at a position not more than / 3.

(B) The ionization energy control means is disposed near the substrate. (1) Particles emitted from the target are scattered by high-concentration plasma to have uniform energy, and furthermore, a site where particles are stabilized by a vibration effect. , A uniform film having high crystallinity is formed.

(2) Also, sufficient electrons are supplied near the vicinity of the substrate, so that dielectric breakdown due to charge distribution on the film formation surface can be prevented.

(3) It can be expected that a portion having low crystallinity on the substrate surface is reverse-sputtered by high-concentration plasma.

In order to expect such an effect, when the distance between the target material and the substrate is set to 1, 2/5
It is preferable to dispose ionization energy control means in the following nearby positions.

By coating the ionization energy control means and other constituent members with a material comprising a film constituent element, it is possible to avoid the contamination of the film formed by sputtering from a source other than the target.

[0042]

Embodiments of the present invention will be described below.

(Embodiment 1) FIG. 1 schematically shows a film forming apparatus according to an embodiment of the present invention.

The film forming apparatus shown in FIG. 1 includes a vacuum chamber 11 constituting a sputtering chamber. The vacuum chamber 11 has an exhaust port 21 and a gas inlet 22.

The substrate 12 is held by a substrate holder 13 provided in the vacuum vessel 11, and the substrate holder 13 is configured to be heated by electric power from a power supply 14.

The target 15 is held opposite to the substrate 12 by a target holder 16 provided with a cooling means (not shown).
7 is connected.

A one-turn antenna coil (I) connected to an AC power supply 19 is provided between the substrate 12 and the target 15.
CP coil 181 is disposed. The antenna coil 181 ionizes the supplied gas by the power from the AC power supply 19 to form the plasma region 20. This plasma region can be controlled independently by the AC power supply 19.

Next, a film forming process using the film forming apparatus shown in FIG. 1 will be described.

First, the substrate 12 was set on the substrate holder 13 and the target 15 (titanium oxide) was set on the target holder. Then, sufficient exhaust was performed to remove impurities and the like in the sputtering chamber.

Thereafter, only argon gas was introduced into the sputter chamber, and the pressure in the sputtering chamber was adjusted to 5 × 10 ⁻⁴ Torr. Here, 50 from the power supply 19 at 13.56 MHz.
By supplying 0 W of RF power, the antenna 181
Could form an inductively coupled plasma excited by the plasma.

Next, a relatively weak RF power of about 300 W was applied to the power supplies 14 and 17. Here, the alternating current phases of the power supply 14 and the power supply 17 were set to be the same. Thus, the surface cleaning of the deposition substrate 12 and the target 15 was simultaneously performed by the argon ions excited by the coil 18. At this time, the plasma generation source including the coil 18 functions as a sputtering argon ion generation source for cleaning the surfaces of the substrate 12 and the target 15.

After performing this cleaning for about 5 minutes, the shutter provided between the film forming substrate 12 and the coil 18 was closed, and the power supply from the power supplies 14 and 17 was stopped. Next, a mixed gas of argon and oxygen was introduced from the gas inlet 22, and the pressure in the vacuum vessel was set to 5 × 10 ⁻³ Torr.
This is because the oxygen content contained in the target is insufficient. Argon and oxygen gases are mixed after adjusting the flow rate from each cylinder and introduced through the gas inlet 22. The vacuum chamber 11 was connected to a vacuum pump via an exhaust port 21. The pressure inside the sputtering chamber was adjusted by operating a valve installed between the exhaust port 22 and the vacuum pump.

After adjusting the pressure in the vessel, the state of plasma ionization in the antenna coil 18 is adjusted by the power supply 19,
800 W of power was supplied from the power supply 17. Here, the electric power applied to the target was limited to a range where abnormal discharge did not occur and the target was not damaged.

Next, after RF power was supplied from the power supply 12, the shutter provided between the film forming substrate 12 and the coil 18 was opened to form a film. The film formation time was adjusted by opening and closing a shutter.

As described above, a film of titanium oxide having no impurities, no oxygen deficiency, and good crystallinity was obtained.

In this embodiment, argon gas is used as a gas for sputtering, but other inert gases can be used. The RF power supplied from the power supplies 14, 17 and 19 may be of the same phase from the same power supply, but may be of different phases according to the purpose.

Conventionally, it has been considered difficult to generate stable plasma only by supplying RF power to a target under high vacuum. However, in the present invention, the coil 18 capable of generating high-density plasma under low pressure uses an argon ion coil. Also functions as a source.

(Embodiment 2) FIG. 2 shows an embodiment in which the other configuration is the same as that of the embodiment 1 except that the antenna coil 181 in the embodiment 1 shown in FIG. It is an example. In the following drawings, the same parts as those in FIG. 1 are denoted by the same reference numerals, and redundant description will be omitted.

(Embodiment 3) FIG. 3 shows an embodiment in which a magnet 23 is provided in the target holding section 16 in the film forming apparatus shown in FIG.

In this embodiment, due to the magnetic field generated in the vicinity of the target from the magnet, the electrons perform cyclotron motion, whereby the density of the electrons colliding with the target 15 is increased and the deposition rate is increased.

(Embodiment 4) FIG. 4 schematically shows a film forming apparatus according to another embodiment of the present invention.

In the embodiment shown in FIG. 4, an antenna coil 184 serving as a plasma energy supply means is arranged near a target.

According to this embodiment, the antenna coil 18
A high-density plasma is formed in the vicinity of the target 15 by the power supply from 4, and sufficient ions are supplied even at a low pressure. Further, prior to film formation, the target and the substrate can be cleaned with plasma to prevent oxides from being formed on the surface of the target material during reactive sputtering.

Further, as shown in the sectional view of FIG. 5, by covering the surface of the antenna coil 184 with the same material 151 as the target material, it is possible to prevent the coil from being sputtered and contaminating the film with impurities. it can. For example, if the target is titanium oxide, the coil coating may be fired by adhering titanium oxide powder around the coil. The titanium oxide powder can be adhered to the surface of the coil by repeating a process of dispersing the surface-treated titanium oxide particles in polyvinyl alcohol into a slurry, impregnating the coil with the slurry, and drying the slurry.
Alternatively, a covering ring conforming to the coil shape may be formed first, and the coil may be introduced therein.

It is to be noted that covering a member which is likely to be sputtered with a material having the same composition as the target or a material containing an element constituting a film is suitable as a means for avoiding impurity contamination in other embodiments. I have.

(Embodiment 5) FIG. 6 schematically shows a film forming apparatus according to another embodiment of the present invention.

In the embodiment shown in FIG. 6, an antenna coil 185 serving as plasma energy supply means is arranged near the substrate.

According to this embodiment, the antenna coil 18
In the plasma generated in step 5, a high-density plasma is formed near the substrate. Therefore, the constituent element gas can be introduced into the plasma region generated by the antenna coil 185 to convert the gas into plasma, and a film can be formed by the reactive sputtering method.

(Embodiment 6) FIG. 7 schematically shows a film forming apparatus according to another embodiment of the present invention.

In the embodiment shown in FIG. 7, the antenna coil 186 is formed of a hollow tube, and a number of small holes are drilled downward in the annular portion.

The distal end of the hollow portion of the antenna coil 186 is formed as a gas inlet 222, and a reactive gas such as oxygen is supplied from the gas inlet 222 and blows out from the small hole 223. Has become. The small hole 223 is shown in FIG.
As shown in (2), the reaction gas is formed on the circumference inward toward the substrate so that the reaction gas is efficiently sent onto the substrate. By regulating the blowing direction of the reaction gas as described above, not only the activated constituent element gas can be efficiently supplied to the substrate surface, but also the constituent element gas can be prevented from reaching the target surface.

Next, a film forming process using the apparatus of this embodiment will be described.

First, after the substrate 12 was placed on the substrate holder 13, the substrate was heated so that the substrate temperature was 400 ° C., and sufficient exhaust was performed to remove impurities and the like in the sputtering chamber. Thereafter, argon gas was introduced into the sputtering chamber from the gas inlet 21 and oxygen gas was introduced into the sputtering chamber from the gas inlet 222, and the pressure in the sputtering chamber was set to 5 × 10 ⁻³ To.
rr. Here, from the power source, for example, 13.56M
An RF power of 300 W at 300 Hz was supplied to form a plasma by the antenna 186.

Next, a DC voltage of 300 V was applied to the target (titanium oxide). Here, it was left for about 5 minutes to clean the target surface. In order to improve the sputtering efficiency, a magnet was arranged so as to form a magnetic field on the target surface. Adjustment of the film formation time was performed by opening and closing a shutter provided between the coil 186 and the film formation substrate. In this embodiment, the antenna coil 186 exists near the substrate. For this reason, since a shutter made of a conductive material has a large effect, the shutter is formed using an insulating material.

After the completion of the film forming time, the power supply to the target was stopped by closing the -degree shutter, and the shutter was opened again to irradiate the film surface with active oxygen. Thus, oxygen deficiency at the outermost surface of the thin film could be suppressed.

(Embodiment 7) FIG. 9 shows an embodiment in which a magnet 25 is provided below the substrate holder 13 in the film forming apparatus shown in FIG. In this embodiment, the electrons perform cyclotron motion due to the magnetic field generated from the magnet near the substrate,
As a result, the density of electrons colliding with the substrate 12 is increased, the plasma density on the substrate surface is increased, and the film quality is improved.

(Embodiment 8) FIG. 10 is a sectional view schematically showing another embodiment of the film forming apparatus of the present invention.

In the embodiment shown in FIG. 10, the magnetic field generating means 26 and the electric field generating means 27 are respectively disposed between the ionization state generating part where the antenna coil 181 is disposed, the target part and the substrate part. (At least one of them)
Are used to divide the plasma region.

According to the film forming apparatus of this embodiment, since the high-density plasma region can be limited and controlled, it is possible to avoid the contamination of the film formed by sputtering from a source other than the target.

(Embodiment 9) In the embodiment shown in FIG. 11, an antenna coil 187 and an antenna coil 188 are arranged in parallel in a vacuum vessel 11 at an interval of two adjacent to a target 15 and a substrate 12, respectively. It was made. According to this embodiment, the effects of the fourth embodiment (FIG. 4) and the fifth embodiment (FIG. 6) can be obtained.

(Embodiment 10) The embodiment shown in FIG.
In the embodiment shown in FIG. 11, the gas inlets 22a, 22 are brought close to the respective antenna coils 187, 188.
2b is provided, and the same or different gas is introduced from each of the gas introduction ports 22a and 22b to enable deposition of various film qualities.

(Embodiment 11) The embodiment shown in FIG.
In the embodiment shown in FIG.
This is an example in which the electric field generating means 27 is disposed between the gate electrodes 7 and 188 to divide the plasma region.

(Embodiment 12) The embodiment shown in FIG.
In the embodiment shown in FIG.
This is an example in which a magnetic field generating means 26 is provided between the first and second plasma regions 7 and 188 to divide the plasma region.

Embodiment 13 The embodiment shown in FIG.
In the embodiment shown in FIG.
7 and 188, the magnetic field generating means 26 and the electric field generating means 27
Is an example in which a plasma region is divided by disposing.

(Embodiment 14) The embodiment shown in FIG.
In the embodiment shown in FIG.
This is an example in which a separation layer 261 is provided between Nos. 7 and 188 to partition a plasma region. The separation layer 261 changes the degree of vacuum like the chamber on the target side (low vacuum side) and the chamber on the film formation substrate side (high vacuum side) of the vacuum vessel, thereby changing the flow direction of the particles on the target side. From the substrate to the film-forming substrate can be prioritized.

(Embodiment 15) FIG. 17 shows a case where a separation layer 262 having a rectifying action is disposed between the antenna coils 187 and 188 in the embodiment shown in FIG. When the 262 is provided, not only the flow direction of the particles is prioritized in the direction of the substrate, but also the function of making the flow direction uniform is provided.

(Example 16) A film forming process was performed as follows using the apparatus of the example shown in FIG.

Substrate holder 1 incorporating heater (not shown) for metal vacuum vessel 11 made of stainless steel or aluminum alloy
The glass substrate 12 was placed on 3. The target 15 was water-cooled at a position facing the substrate 12 and the target 15 was bonded to the electrode insulated from the vacuum vessel 11 with In or the like. A permanent magnet 23 is arranged on the back surface of the target 15 and 100
A magnetic field of ~ 1000 Gauss was formed. Target 15
Is an oxide ceramic material (Sr _x Ti _y O)
_z , Ti _x O _y, etc.) and a resistivity of 10 ⁴ to 10 ⁶ Ωcm
Was used as the insulating material. 13. On the electrode on the back of the target 15
A high frequency voltage of 56 MHz was applied. On the other hand, a coil tube (here, one turn) 181 was formed by circling a water-cooled copper tube between the substrate 12 and the target 15 in a substantially circular shape, and a high frequency of 13.56 MHz was applied. The power supply of the coil electrode was applied in synchronization with the target power supply.
The area surrounded by the coil electrode 181 was larger than the target 15. The surface of the copper tube was coated with an insulator (TiO ₂ (titanium oxide)) containing the same element as the target material. This insulator may contain 0.1 to 10 at% of Mo, Ta, Sr, Ba or the like. The thickness of the coating was between 10 μm and 1 mm. In addition, you may make it provide the alumina of another material, and a Ti oxide in order in the inside by making a coating layer into a multilayer. The target 15 used was 1.2 to 2 times larger than the substrate 12. As power supply to the coil, high-frequency power may be applied to both ends through a matching circuit so that the potential is not fixed in terms of direct current, an appropriate bias is applied, or a balance is made between positive and negative. .

Here, the distance between the target and the substrate is 10
Target 1 for a 6 inch substrate 12 at ~ 30 cm
5 is 8 inches.

As gases, Ar and O ₂ were introduced into the vacuum vessel 11 through a flow meter. Ar: O ₂ =
3: 1 to 5: 1 were used. The coil electrode 181 was provided closer to the target at a distance of 1: 1 to 1: 3 between the target and the substrate. The whole pressure is 0.005Pa ~ 0.5P
As a, 800 W of RF was applied to the target electrode and 10 to 1000 W of RF was applied to the coil electrode 181. In this embodiment, the stage of the substrate 12 was set to the ground potential. An inductively coupled high-density plasma region is formed inside the coil electrode, and the electron density of plasma at the center of the coil is 10 ¹⁰ / c.
m ³ or more. At this time, it was confirmed that particles containing the target element were ionized by 1 to 30% and reached the substrate. The ion energy of the particles passing through the plasma was suppressed to a low level of about 5 to 30 eV. Since the surroundings are grounds in a conductive chamber and are inductively coupled plasma, it can be said that the effect is that the plasma potential does not rise at a low pressure and the plasma is discharged. In addition, since the magnetic field generated by the magnet on the back surface of the target extends to the plasma region generated by the coil electrode, the uniformity of the plasma is obtained while the density is improved and the potential is reduced.

Under these conditions, when the substrate temperature was room temperature, the film on the substrate was of poor quality.
At 0 ° C., a good crystal having a high resistivity and a stable dielectric constant was obtained. HOYA NA-35, NA-
45, a film was formed at 400 ° C. using 1737 manufactured by Corning, but no particular deformation was observed.

(Embodiment 17) FIG. 18 shows an apparatus of the embodiment shown in FIG. 3 in which a shield electrode 2 almost covering a target, a substrate, and a coil electrode is used to control the state of plasma.
00 is provided to apply a predetermined potential.

In this embodiment, a DC component is superimposed on a high frequency, and an average voltage of +5 to −30 is applied to the outer wall of the chamber.
A potential of V was applied. Thereby, the energy of the ions reaching the substrate can be reduced, and the film characteristics such as the smoothness of the film surface are improved.

Although high frequency does not need to be applied, when the insulating material is formed, the insulating material is formed on the shield electrode 200 and direct current connection with plasma cannot be performed.
It is desirable to apply a high frequency also to the substrate stage and synchronize it at substantially the same phase at the same frequency.

(Embodiment 18) FIG. 19 shows an embodiment in which the antenna coil 181 is arranged outside the vacuum vessel 11, and the portion of the vacuum vessel 11 facing the antenna coil 181 is made of a dielectric 201 such as quartz or ceramic. It is. In this embodiment, even if the power applied to the coil electrode 181 is increased on the glass substrate 12, the components of the coil electrode 181 are not mixed, and the characteristics of the film are improved. Coil electrode 18
By setting 1 to 2 to 4 turns, a plasma having a higher density can be generated.

(Embodiment 19) FIG. 20 shows an embodiment in which a dielectric cylindrical wall 206 is provided inside an antenna coil 181 in the embodiment shown in FIG. In this embodiment, effects similar to those of the eighteenth embodiment can be obtained. In this case, providing a thin conductive material with a slit between the dielectric wall 206 and the coil 181 to suppress the coupling between the electrostatic coil 181 and the plasma is effective for controlling the plasma potential.

(Embodiment 20) FIG. 21 shows an embodiment in which the antenna coil 181 is formed in a space 210 closer to the outside than the shield electrode 200 in the embodiment shown in FIG.
In addition, there is an effect even if the region of the shield electrode 200 does not completely cover the region from the target 15 to the substrate 12.

Using the above embodiments, when forming an oxide film or the like, it is possible to improve the film quality by applying high-frequency power to the substrate side (stage). It has been confirmed that the application of about 10 W improves the adhesion of the film. Particularly, it is effective to add it as a cleaning only before film formation.

Further, a plurality of targets may be provided to apply different electric power.

Furthermore, in the above embodiments, high-frequency power is applied to the target, but this makes it possible to freely control the potential of the plasma and to effectively control the energy of the film-formed particles. Usually, the frequency of each power supply is the same as that of the coil electrode to control the phase, but different frequencies (for example, 100
MHz and 13.56 Mz). Further, the present invention can also be applied to a method in which a DC power or a superimposed power with a high frequency is applied to a target by using a conductive material and reacted with a gas to be introduced to form a film.

Further, in the above embodiments, the other terminal side of the high-frequency power supply is illustrated as being grounded. However, the present invention is not limited to such an embodiment, and it is not necessary to ground the power supply. Can be supplied from a common power supply or arbitrarily changed.

Further, in order to reduce the loss due to the recombination of the plasma on the wall surface, a magnet is provided at the chamber wall or at the shield electrode, and the NS is arranged so that electrons do not hit the wall. Is also good.

A multi-component oxide containing Ti or Ta as a film-forming material was particularly effective in realizing a film having excellent properties such as insulating properties and crystallinity at a low temperature.

It is considered that the control of oxidation and film particle energy is important for these materials, and that the present invention is effective for realizing them.

[0105]

As described above, according to the present invention,
Since a plasma region is provided between the target of the sputtering apparatus and the film formation substrate, and a high-density plasma region can be formed here, the high-density plasma region can be conveniently used for film formation.

That is, according to the present invention, since a crystallized film can be obtained at a relatively low substrate temperature, restrictions on substrate selection and device structure are greatly reduced.

By forming a high-density plasma region near the substrate, some constituent elements can be supplied to the substrate surface in a gaseous state, reacted on the surface of the thin film, and taken into the thin film. For this reason, it is possible to prevent in advance the deterioration of the film characteristics due to the composition deviation. Further, since the high-density plasma region can be limited, it is possible to avoid the deterioration of the film formation characteristics due to the contamination of the film formed by sputtering from a target other than the target.

[Brief description of the drawings]

FIG. 1 is a sectional view schematically showing an embodiment of the present invention.

FIG. 2 is a sectional view schematically showing another embodiment of the present invention.

FIG. 3 is a sectional view schematically showing still another embodiment of the present invention.

FIG. 4 is a sectional view schematically showing still another embodiment of the present invention.

FIG. 5 is a cross-sectional view showing a state in which a material containing a film forming element is coated on an outer periphery of a coil which is a plasma energy supply unit used in an embodiment of the present invention.

FIG. 6 is a sectional view schematically showing still another embodiment of the present invention.

FIG. 7 is a sectional view schematically showing still another embodiment of the present invention.

FIG. 8 is a view showing an arrangement of gas introduction holes in a gas introduction section provided in the coil shown in FIG. 7;

FIG. 9 is a sectional view schematically showing still another embodiment of the present invention.

FIG. 10 is a sectional view schematically showing still another embodiment of the present invention.

FIG. 11 is a sectional view schematically showing still another embodiment of the present invention.

FIG. 12 is a sectional view schematically showing still another embodiment of the present invention.

FIG. 13 is a sectional view schematically showing still another embodiment of the present invention.

FIG. 14 is a sectional view schematically showing still another embodiment of the present invention.

FIG. 15 is a sectional view schematically showing still another embodiment of the present invention.

FIG. 16 is a sectional view schematically showing still another embodiment of the present invention.

FIG. 17 is a sectional view schematically showing still another embodiment of the present invention.

FIG. 18 is a sectional view schematically showing still another embodiment of the present invention.

FIG. 19 is a sectional view schematically showing still another embodiment of the present invention.

FIG. 20 is a sectional view schematically showing still another embodiment of the present invention.

FIG. 21 is a sectional view schematically showing still another embodiment of the present invention.

[Explanation of symbols]

11 Vacuum container 12 Substrate 13 Substrate holder 14 Power supply 15 Target 16
... Target holder, 17 power source, 19 power source, 20 plasma region, 21 exhaust port, 2
2 ... gas inlet, 23 ... magnet, 25 ... magnet,
26 magnetic field generating means 27 electric field generating means
151: coating with the same material as the target, 181
~ 188 ... Plasma energy supply means 222 ...
Gas inlet, 261-262 ... Separation layer

 ──────────────────────────────────────────────────続 き Continuing on the front page (72) Inventor Yoko Fukuda 33 Shinisogocho, Isogo-ku, Yokohama-shi, Kanagawa Prefecture Inside Toshiba Production Technology Research Institute (72) Inventor Yutaka Onozuka 33 shares in Shinisogocho, Isogo-ku, Yokohama-shi, Kanagawa Company Toshiba Production Technology Laboratory

Claims (9)

[Claims] 1. A target material made of a material containing at least a constituent element of a film to be formed, a substrate holding part for holding a substrate on which a film is formed, and particles of constituent components of the target material from a surface of the target material In the film forming apparatus having an energy particle supply means for discharging the ion, an ionization energy supply means capable of independently controlling energy supply is provided between the target material and the substrate holding unit. Film forming apparatus. 2. In the ionization energy supply means,
2. The film forming apparatus according to claim 1, further comprising means for introducing a gas or a liquid as a plasma generating material. 3. The film forming apparatus according to claim 1, wherein the ionizing energy supply unit is coated with a material containing a constituent element of a film to be formed. 4. An AC power source in each of the target material, the substrate holding unit, and the energetic particle supply unit, the phase of which is synchronized or arbitrarily controlled,
The film forming apparatus according to claim 1, wherein the voltage is applied. 5. The film forming apparatus according to claim 1, wherein the ionizing energy supply unit is disposed near a target material. 6. The film forming apparatus according to claim 1, wherein said ionizing energy supply means is disposed near a substrate. 7. A target material made of a material containing at least a constituent element of a film to be formed, ionized ions collide with the target material to release particles made of components constituting the target material, and deposit the particles on a substrate. In the method of forming a film, by forming a plasma region between the target material and the substrate, by causing particles emitted from the target material to pass through the plasma region and collide with electrons or ions in plasma, A film forming method characterized by promoting ionization of the particles. 8. A film is formed by using a constituent element of a film to be formed as an element constituting the plasma and using a constituent element of the target material and a constituent element of the plasma. Film formation method. 9. The target material and / or substrate is cleaned by colliding electrons or ions emitted from the plasma region with the target material and / or substrate. The film forming method according to the above.