JP2002263473A - Film deposition system - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a film deposition system for superfine particles for which a plasma condition and a nozzle condition are independently controlled. SOLUTION: This film deposition system for depositing the superfine particles in aerosol on a substrate is provided with an evacuatable film deposition chamber to which gas is introduced and an evacuatable nozzle chamber connected to the film deposition chamber and equipped with a nozzle for forming the flow of the aerosol. A barrier wall is formed between the film deposition chamber and the nozzle chamber and the barrier wall is provided with an opening part capable of maintaining a pressure difference between the film deposition chamber and the nozzle chamber and making pass through the superfine particles discharged from the nozzle. A substrate holder for holding the substrate so as to face the nozzle, whose relative position can be displaced to the nozzle, is equipped inside the film deposition chamber. As a plasma generation means not obstructing the flying of the superfine particles to the substrate, a power source means for applying voltage for plasma generation to the substrate holder is provided.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

The present invention relates to an apparatus for forming ultrafine particles on a substrate.

[0002]

2. Description of the Related Art Conventionally known as a jet printing system, ultra-fine particles of metal, ceramics, etc. are converted into aerosol, formed into a high-speed beam through a fine nozzle, and irradiated and collided toward a substrate to form a strong film. Are known. In this method, when a functional material is formed into a film, depending on the type of ultrafine particles, it may be difficult to maintain its crystal structure when formed into a film, so that sufficient functions may not be exhibited.

The basic principle of the film forming method is that when a part of the kinetic energy of the ultrafine particles collides with the substrate, the kinetic energy is converted into thermal energy to sinter between the fine particles or between the substrate and the fine particles. In the case of an oxide material having a high melting point, in order to obtain a heating temperature sufficient for fusion bonding,
When the ultrafine particles are accelerated at a high speed of several hundred m / sec or more, there is a defect that the crystal structure of the ultrafine particles collides with the substrate, and at the same time, undergoes a large distortion due to an impact force or the like, or is greatly changed by being crushed.

[0004] In addition, a large stress is generated and remains in the film having the distortion, which causes problems such as deterioration of film characteristics and separation from the substrate. Further, when the ultrafine particle material is a metal, an oxide film or the like is easily formed on the surface thereof, and it has been difficult to obtain a film having sufficient conductivity and adhesive force to a substrate. Further, even in the case of an oxide ultrafine particle material, if water molecules are attached to the surface of the material, the bonding force between the ultrafine particles is reduced, and it is difficult to obtain a film having excellent characteristics.

[0005] Further, a technique called a plasma spraying method is conventionally known. This technique is a technique of forming a film by spraying fine particles from a nozzle toward a substrate using a high-temperature plasma gas. In this method, particles having a particle diameter of several μm or more are conveyed by a gas into a high-temperature, high-speed plasma jet generated by ionizing an inert gas, and the supplied particles are heated and supplied at a high pressure generated at the same time. The film is sprayed from a nozzle, accelerated, and collided with a substrate to form a film. The high-temperature plasma jet generates an arc discharge by applying a high voltage between a cathode and an anode provided in a gun head for injecting a coating material, and converts the introduced gas near the atmospheric pressure into a high-temperature plasma. Is obtained.

However, the temperature of the generated plasma jet reaches 30,000 ° C. in a high place, and the deposited fine particles are heated from the vicinity of the melting point to a temperature higher than the melting point by the high-temperature plasma to be in a semi-molten or molten state, and are jetted toward the substrate. You. Therefore, the crystal structure of the fine particles ejected from the nozzle is destroyed, and depending on the material, the composition changes due to the difference in the vapor pressure of the constituent atoms, and further controls the state of cooling and recrystallization when adhering to the substrate. Difficult,
There is a problem that the crystal structure of the deposited film is greatly changed from the crystal structure of the original fine particles.

[0007] For this reason, conventionally, it is necessary to heat the deposited film again at a high temperature during or after the deposition in order to improve the characteristics by converting the deposited material into the crystal structure of the original ultrafine particle material. This has been a major problem in film formation and fine processing of a functional material for forming fine functional components and device components. Furthermore, when the ultrafine particle material is a metal, it has been difficult to obtain a film having sufficient conductivity and adhesive force to a substrate.

Further, conventionally, a PV without using ultrafine particles is used.
D, A thin film forming method by CVD is also known. In the case of this method, a heat treatment at a high temperature is often required, such as in the case of an oxide ceramic material, since a growth process from an atomic or molecular state is performed. Since it is lower than the film forming process by two digits or more, it is practically difficult to obtain a film having a thickness of several μm or more.

[0009]

As a technique for solving the above-mentioned problems, for example, Japanese Patent No. 2963993 discloses an ultra-fine particle forming method in which ultra-fine particles are sprayed toward a substrate and deposited to form a film. Has been disclosed. In this method, at least before the ultrafine particles collide with the substrate, these ultrafine particles and the substrate are irradiated with high-energy atoms such as ions, atoms, molecular beams and low-temperature plasma, and high-speed high-energy beams that are molecules. Particle size is 10nm
Removing or amorphizing a contaminant layer or an oxide layer due to water molecules or the like adhering to the ultrafine particles and the surface of the substrate without melting or decomposing the ultrafine particles of metals and ceramics in the range of 5 μm to 5 μm. Activated by
Even if the ultra-fine particle stream collides with the substrate at a low speed, strong bonding between the ultra-fine particles and the substrate or ultra-fine particles is realized at low temperature, maintaining the crystallinity of the ultra-fine particles to achieve dense and excellent physical properties and substrates. To form a thin film having good adhesion.

However, in the film forming apparatus used in the above method, a nozzle is provided in the film forming chamber, and the reduced pressure is maintained by the same exhaust system. It was very difficult.

Further, if the discharge electrode for generating plasma is in the path until the ultrafine particles from the nozzle enter the substrate, the discharge electrode may be blasted by the impact of the ultrafine particles and may be mixed into the film as a contaminant. There is. Further, it is necessary to periodically take out and maintain the electrode to which the ultrafine particles are attached.

According to the present invention, a film forming chamber for generating plasma and a nozzle chamber for setting nozzle conditions are separated, and a pressure difference between the film forming chamber and the nozzle chamber can be maintained. Provided is a film forming apparatus capable of controlling plasma conditions.

[0013]

According to the present invention, there is provided a film forming apparatus for forming ultra fine particles in an aerosol on a substrate, the apparatus comprising an active gas or an inert gas,
A film forming chamber into which a mixed gas of these two is introduced, and a decompressible nozzle chamber provided with a nozzle connected to the film forming chamber and forming a flow of the aerosol, wherein the film forming chamber and the A partition is formed between the nozzle chamber and the partition, the partition having an opening capable of maintaining a pressure difference between the film forming chamber and the nozzle chamber and allowing the ultrafine particles emitted from the nozzle to pass therethrough, In the film forming chamber, a substrate holder that holds the substrate so as to face the nozzle and displaces a relative position with respect to the nozzle is provided, and as a plasma generation unit that does not hinder the flight of the ultrafine particles toward the substrate. This can be achieved by a film forming apparatus provided with a power supply unit for applying a plasma generation voltage to the substrate holder.

[0014] Further, the above object is as defined in claim 2.
A film forming apparatus for forming ultra-fine particles in an aerosol on a substrate, comprising: a film forming chamber capable of introducing an active gas or an inert gas, or a mixed gas of both, into a decompressible film forming chamber; A nozzle chamber provided with a nozzle for forming the flow of the aerosol is provided, a partition is formed between the film forming chamber and the nozzle chamber, and the partition is formed between the film forming chamber and the nozzle chamber. An opening capable of maintaining the pressure difference and allowing the ultrafine particles emitted from the nozzle to pass therethrough, and holding the substrate in the film forming chamber so as to face the nozzle and A film-forming apparatus in which a high-frequency induction coil is wound around the film-forming chamber is provided as a plasma generating means provided with a substrate holder capable of displacing the position and not hindering the flight of the ultrafine particles toward the substrate. Can do That.

[0015] Further, the above object is as defined in claim 3.
A film forming apparatus for forming ultra-fine particles in an aerosol on a substrate, comprising: a film forming chamber capable of introducing an active gas or an inert gas, or a mixed gas of both, into a decompressible film forming chamber; A nozzle chamber provided with a nozzle for forming the flow of the aerosol is provided, a partition is formed between the film forming chamber and the nozzle chamber, and the partition is formed between the film forming chamber and the nozzle chamber. An opening capable of maintaining the pressure difference and allowing the ultrafine particles emitted from the nozzle to pass therethrough, and holding the substrate in the film forming chamber so as to face the nozzle and A helicon provided with a substrate holder capable of displacing its position and serving as a plasma generating means that does not hinder the flight of the ultrafine particles toward the substrate, an antenna around the film forming chamber and an electromagnetic coil wound outside the antenna. Wave discharge equipment It can also be achieved by the hotel to film forming device.

[0016] Further, the above object is as described in claim 4.
A film forming apparatus for forming ultra-fine particles in an aerosol on a substrate, comprising: a film forming chamber capable of introducing an active gas or an inert gas, or a mixed gas of both, into a decompressible film forming chamber; A nozzle chamber provided with a nozzle for forming the flow of the aerosol is provided, a partition is formed between the film forming chamber and the nozzle chamber, and the partition is formed between the film forming chamber and the nozzle chamber. An opening capable of maintaining the pressure difference and allowing the ultrafine particles emitted from the nozzle to pass therethrough, and holding the substrate in the film forming chamber so as to face the nozzle and This is also achieved by a film forming apparatus provided with a substrate holder capable of displacing its position, and as a plasma generating means that does not hinder the flight of the ultrafine particles toward the substrate, a window for introducing microwaves is provided on the film forming chamber side. be able to.

[0017] Further, the above object is as described in claim 5,
A film forming apparatus for forming ultra-fine particles in an aerosol on a substrate, comprising: a film forming chamber capable of introducing an active gas or an inert gas, or a mixed gas of both, into a decompressible film forming chamber; A nozzle chamber provided with a nozzle for forming the flow of the aerosol is provided, a partition is formed between the film forming chamber and the nozzle chamber, and the partition is formed between the film forming chamber and the nozzle chamber. An opening capable of maintaining the pressure difference and allowing the ultrafine particles emitted from the nozzle to pass therethrough, and holding the substrate in the film forming chamber so as to face the nozzle and A substrate holder capable of displacing the position is provided, and as a plasma generation unit that does not hinder the flight of the ultrafine particles toward the substrate, a microwave radiator is provided in the film formation chamber while a resonance magnetic field is provided around the film formation chamber. It is connected It can be achieved by the membrane device.

Further, the above object is as described in claim 6.
A film forming apparatus for forming ultra-fine particles in an aerosol on a substrate, comprising: a film forming chamber capable of introducing an active gas or an inert gas, or a mixed gas of both, into a decompressible film forming chamber; A nozzle chamber provided with a nozzle for forming the flow of the aerosol is provided, a partition is formed between the film forming chamber and the nozzle chamber, and the partition is formed between the film forming chamber and the nozzle chamber. An opening capable of maintaining the pressure difference and allowing the ultrafine particles emitted from the nozzle to pass therethrough, and holding the substrate in the film forming chamber so as to face the nozzle and A substrate holder capable of displacing the position is provided, and a ring-shaped electrode is provided around the film forming chamber as plasma generation means that does not hinder the flight of the ultrafine particles toward the substrate, and a high-frequency power supply is connected to the ring-shaped electrode. Film forming equipment It can also be achieved by.

[0019]

Embodiments of the present invention will be described below with reference to the drawings.

FIG. 1 shows a film forming apparatus 100 according to the first embodiment. The film forming apparatus 100 is an apparatus for forming ultra-fine particles in an aerosol on a substrate. The film forming chamber 2 of the film forming apparatus 100 includes an active gas or an inert gas,
Alternatively, a gas introducing pipe 1 for introducing a mixed gas of these two is provided, and the pressure can be reduced by an exhaust device 11.

A nozzle chamber 4 is connected to the film forming chamber 2. The nozzle chamber 4 is provided with a nozzle 3 for forming the flow of the aerosol, and can be depressurized by an exhaust device 12.

A partition 5 is formed between the film forming chamber 2 and the nozzle chamber 4. The partition 5 has an opening 7 that maintains the pressure difference between the film forming chamber 2 and the nozzle chamber 4 and allows the ultrafine particle flow 6 discharged from the nozzle 3 to pass therethrough.

A substrate holder 9 is provided in the film forming chamber 2 for holding the substrate 8 so as to face the nozzle 3 and for displacing the relative position of the substrate 8 with respect to the nozzle 3. Have been.

As a plasma generation means which does not hinder the flight of the ultrafine particle flow 6 toward the substrate 8, a power supply means 10 for applying a plasma generation voltage to the substrate holder 9 is provided.

As long as the voltage applied from the power supply means 10 to the substrate holder 9 is a voltage equal to or higher than the discharge starting voltage, any one of DC, AC, medium frequency, high frequency, and a superimposed voltage thereof may be used. Can be.

For example, the power supply means 10 is a high-frequency power supply, and the introduced gas is an inert gas such as Ar. At this time,
The inside of the film forming chamber 2 is evacuated to a pressure of 10 ⁻⁵ Torr or less in advance, and then an inert gas such as Ar is pumped to 10 ⁻⁴ to 10
Introduce at a pressure of ^-3 Torr. The nozzle chamber 4 is evacuated to a pressure of several Torr or less before discharging the ultrafine particles.

A partition 5 between the film forming chamber 2 and the nozzle chamber 4
The opening 7 is small enough to allow the flow of the ultrafine particles 6 discharged from the nozzle 3 to pass therethrough, and is formed so that the pressure difference between the film forming chamber 2 and the nozzle chamber 4 can be sufficiently maintained.

Here, when a voltage from the power supply means 10 is applied to the substrate holder 9, a high-frequency plasma P can be generated. Thereafter, the aerosol generated in the aerosolization chamber 13 is discharged through the nozzle 3 to form the ultrafine particle flow 6. At this time, before the ultrafine particle flow 6 collides with the substrate 8, the ultrafine particle flow 6 and the substrate 8 are irradiated with Ar ions from the plasma P to activate the ultrafine particles of the ultrafine particle flow 6 and the surface of the substrate 8. Is done.

The activated ultrafine particle stream 6 is sprayed onto the substrate 8 to form a deposited film. At this time, the speed of the ultrafine particle flow 6 injected from the nozzle 3 can be controlled by the opening cross-sectional area of the nozzle 3 or the pressure in the aerosolization chamber 13.

At the time of film formation in this apparatus, the substrate holder 9
Can be displaced relative to the nozzle by driving means (not shown), and by scanning the incident position of the ultrafine particles, a uniform film can be formed on the substrate surface.

As described above, the film forming chamber 2 and the nozzle chamber 4
There is a partition wall 5 between them, and the opening 7 of the partition wall 5 only needs to be small enough to allow the flow of the ultrafine particles 6 discharged from the nozzle 3 to pass therethrough. And the pressure difference with the aerosolization chamber 13 is sufficiently maintained.
The pressure inside the film forming chamber 2 is set to an opening size that does not cause a significant change even if the pressure of the ultra fine particles 6 from the nozzle 3 is controlled by changing the pressure, so that a stable plasma state can be maintained. it can.

According to the film forming apparatus of the first embodiment, the supply of the film forming energy (kinetic energy) by spraying the ultrafine particle material onto the substrate 8 and the supply of the ultrafine particle activation energy by the plasma P are independent. Because it can be performed, the ultrafine particle material is activated without melting, the bonding between the ultrafine particles and the substrate or the ultrafine particles is promoted, and while maintaining the crystallinity of the ultrafine particles, a dense and good film physical property and a good A deposit having adhesiveness can be formed.

The film forming apparatus 100 according to the present embodiment is particularly advantageous when forming a film using an aerosol of ceramics such as tin oxide, zinc oxide, titanium oxide and PZT. In addition, the gas species to be introduced is not limited to an inert gas, and an active gas such as an oxidizing or reducing gas or a mixed gas of an inert gas and an active gas can be used. The film formation of (chlorination, carbonization reaction, etc.) can also be controlled independently of other conditions, and it is also possible to form a film by depositing after forming a reaction layer on the surface of ultrafine particles.

That is, as shown in the device illustrated in FIG.
Al ultrafine particles 112 formed on the surface of 1 (Al ₂ O ₃ )
An MIM element can be suitably manufactured by depositing the same. Also, S
The present invention can also be applied to the production of a MIS device by depositing ultrafine Si particles having an oxide layer (SiO ₂ ) formed on the surface thereof using the aerosol of i.

Next, FIG. 3 shows a film forming apparatus 200 according to a second embodiment of the present invention. This film forming apparatus 200 is shown in FIG.
In addition to the film forming apparatus 100 described above, a magnetic field generating means 21 is provided on the back side of the substrate holder 9 so as to generate an orthogonal electromagnetic field on the path of the ultrafine particle flow.

The same parts as those in FIG. 1 are denoted by the same reference numerals, and redundant description will be omitted. Further, the same applies to the reference numerals of the film forming apparatuses shown in the following examples.

Since the electrons always move in the direction perpendicular to both the electric field and the magnetic field and perform a drift motion, the moving distance of the electrons to reach the electrode can be increased. For this reason, in the present film forming apparatus 200, the density of plasma is increased by increasing the chance of collision of one electron with gas molecules,
Thereby, the ion density required for activation can be increased.

As the magnetic field generating means 21, a permanent magnet,
Any of the electromagnets can be used. Furthermore, if the magnets are arranged in a so-called magnetron type in which the trajectory of the electron drift motion describes one endless closed path, the plasma density can be further increased and the effect of activation can be enhanced. In addition, the substrate temperature can be prevented from rising due to electron impact.

At this time, the magnetic field generating means 21 is arranged at a position which does not hinder the flight of the ultrafine particles from the nozzle.
With this configuration, since the ultrafine particles from the nozzle do not directly enter the magnetic field generating means 21, it is possible to suppress the magnetic field generating means 21 from being damaged by the impact of the ultrafine particle flow 6.

FIG. 4 shows a film forming apparatus 300 according to the third embodiment. In the present film forming apparatus 300, a high frequency induction coil 31 is wound around a plasma generation region in the film forming chamber 2 and connected to a high frequency power supply 32, and 1 to 50 MHz, for example, 13.56 MHz which is a normal commercial frequency. The plasma is generated in the gas supplied from the gas introduction tube 1 by applying the voltage.

Then, ions in the plasma are irradiated to the ultrafine particles from the nozzle 3 to activate the surface or to form a compound film (oxide film, nitride film, etc.) on the surface.

In the film forming apparatus 300 according to the third embodiment, no discharge electrode is provided in the film forming chamber 2, that is, scattering of ultrafine particles by the electrode and instability of plasma due to electrode contamination are prevented. Can be suppressed.

FIG. 5 shows a film forming apparatus 400 of the fourth embodiment. In the film forming apparatus 400, an antenna 42 is provided outside the film forming chamber 2, and an electromagnetic coil 41 is further connected outside the film forming chamber 2 in the axial direction, and a high frequency of 1 to 50 MHz, for example, 13.56 MHz is applied to the antenna 42. 42
And the electromagnetic coil 41 to generate a helicon wave, and the gas supplied from the gas introduction pipe 1 is ionized through the generation of the helicon wave. As a result, plasma is generated, and ions in the plasma are irradiated to the ultrafine particles from the nozzle 3 in this plasma generation region to activate the surface or to form a compound film (oxide film, nitride film, etc.) on the surface. To form.

Also in the film forming apparatus 400 of the fourth embodiment, no discharge electrode is provided in the film forming chamber 2, that is, scattering of ultrafine particles by the electrode and instability of plasma due to electrode contamination are prevented. Can be suppressed.

FIG. 6 shows a film forming apparatus 500 of the fifth embodiment. In the present film forming apparatus 500, the film forming chamber 2 is provided with dielectric windows 51 and 52 for introducing microwaves such as alumina ceramics or quartz.

Simultaneously with the gas being discharged from the gas introduction pipe 1 into the film forming chamber 2, the frequency from the microwave power supply (not shown) is 500 MHz or more, preferably 2.45 GHz.
The microwave of z is passed through a waveguide (not shown), and then introduced into the film forming chamber 2 through the dielectric window 51. Thus,
The gas introduced into the film formation chamber 2 is excited by microwave energy and dissociated, generating neutral radical particles, ion particles, electrons, and the like, and generating plasma in the gas.

Then, the ions in the plasma are irradiated to the ultrafine particles from the nozzle 3 to activate the surface or to form a compound film (oxide film, nitride film, etc.) on the surface.

Also in the film forming apparatus 500 of the fifth embodiment, no discharge electrode is provided in the film forming chamber 2, that is, scattering of ultrafine particles by the electrode and instability of plasma due to electrode contamination are prevented. Can be suppressed.

FIG. 7 shows a film forming apparatus 600 according to the sixth embodiment. In the present film forming apparatus 600, the microwave radiating device 62 is connected to the film forming chamber 2, and for example, 2.45G
A microwave of Hz is generated, and a resonance magnetic field of, for example, 875 gauss is applied to the outside of the film forming chamber by an electromagnetic coil of a resonance magnetic field 61 to generate plasma. In this plasma generation region, the ions in the plasma are irradiated to the ultrafine particles from the nozzle 3 to activate the surface or to form a compound film (oxide film, nitride film, etc.) on the surface. .

Also in the film forming apparatus 600 of the sixth embodiment, no discharge electrode is provided in the film forming chamber 2, that is, scattering of ultrafine particles by the electrode and instability of plasma due to electrode contamination are prevented. Can be suppressed.

FIG. 8 shows a film forming apparatus 700 according to the seventh embodiment. In the present film forming apparatus 700, ring-shaped electrodes 71 and 72 are connected to the outside of the film forming chamber 2 in the longitudinal direction and loosely fitted.
For example, it is configured to apply a current having a commercial frequency of 13.56 MHz. In this manner, plasma is generated, and ions in the plasma are irradiated to the ultrafine particles from the nozzle 3 in the plasma generation region to activate the surface or to form a compound film (oxide film, oxide film, etc.) on the surface.
A nitride film or the like).

Also in the film forming apparatus 700 of the seventh embodiment, no discharge electrode is provided in the film forming chamber 2, that is, scattering of ultrafine particles by the electrode and instability of plasma due to electrode contamination are prevented. Can be suppressed.

FIG. 9 shows a film forming apparatus 800 according to the eighth embodiment. In the present film forming apparatus 800, an intermediate chamber 81 that can be decompressed by the exhaust device 82 is formed between the film forming chamber 2 and the nozzle chamber 4, and the partition 5 and the partition 83 between the film forming chamber 2 and the intermediate chamber 81 are formed. An opening 7 and an opening 84 that maintain the pressure difference between the film forming chamber 2 and the nozzle chamber 4 and allow the ultrafine particle flow 6 discharged from the nozzle 3 to pass therethrough are formed. Further, an exhaust speed control means 85 such as a conductance valve is provided between the intermediate chamber 81 and the exhaust device 82.

By providing the intermediate chamber 81 between the film forming chamber 2 and the nozzle chamber 4 in this way, even if the pressure of the aerosolization chamber 13 is changed to control the ultrafine particle flow 6 from the nozzle 3, By adjusting the pumping speed at 81, a large change in the pressure in the film forming chamber 2 can be avoided, and a stable plasma state can be maintained.

The configuration in which the intermediate chamber is provided according to this embodiment can be applied to the film forming apparatus shown in the above-described embodiment.

FIG. 10 shows a speed selector 90 applicable to the film forming apparatus of the above embodiment. The speed selector 90 is configured such that a disk 91 having a radius r ₀ having a slit 92 having a width W and a disk 93 having a radius r ₀ having a slit 94 having a width W are separated by a distance L at a phase angle φ _{0 as} shown in FIG. And is connected to the same rotating shaft 95, and rotates at an angular velocity ω.

FIG. 12 shows an example in which the speed selector 90 is applied to the film forming apparatus 400 of the fourth embodiment shown in FIG. At the time of film formation by this film forming apparatus 400, as shown in FIG. 12, the rotation shaft 95 is set in the nozzle chamber 4 so as to be parallel to the ultrafine particle flow 6, and is rotated by rotation introducing means (not shown). Here, the ultrafine particle flow 6 that has passed through the slit 92 reaches the disk 93 after a time t. At that time, if the slit 94 is just there, the ultrafine particle stream 6 can pass through the slit 94.

If the velocity of the ultrafine particle flow 6 is V, the distance between the disks is L, the phase angle between the disks 91 and 93 is φ ₀ , and the rotational angular velocity of the disks is ω, t = L / V = Φ ₀ / ω holds.

[0059] Because in fact the slit 94 there is a width W, it occurred width, which is also in φ is, the velocity V to _{pass, (ωL / φ max) <} v <(ωL / φ min) (1) Comes in a range of

Assuming that the radius of the disk is r ₀ , φ _min = φ ₀ − (W / r ₀ ) and φ _max = φ
₀ + to become (W _{/ r} 0).

As a result, the flow of ultrafine particles limited to the velocity in the range of the above equation (1) passes through the plasma, so that the interaction time with the plasma is limited to a time range corresponding to the velocity range. This is convenient when a reaction layer is formed on the surface of the ultrafine particles by a plasma reaction to a predetermined thickness.

In particular, an Al aerosol is used to produce an MIM element by depositing ultrafine Al particles having an oxide layer (Al ₂ O ₃ ) formed on the surface, or an oxide layer (SiO 2) is used by using a Si aerosol. ₂ ) It is effective in the production of a MIS device by depositing ultrafine Si particles formed on the surface.

In order to increase the efficiency of film formation, it is of course possible to provide a plurality of slits in the disk so as to provide a plurality of places through which the flow of ultrafine particles can pass.

Further, the case where the main speed selector 90 is disposed in the nozzle chamber 4 has been described here, but it can be made to function sufficiently even when disposed in the film forming chamber 2.

FIG. 13 also applies to the film forming apparatus of the embodiment.
Another possible speed selector 900 is shown. this
The speed sorter 900 has a half with a slit 102 having a width W.
Diameter r ₀Rotating cylinder 105 to which the circular plate 101 is connected, and the width W
Radius r with slit 104₀Disk 103
The rotation axis 106 is the phase angle between the disks as shown in FIG.
φ₀In the state of the above, it is arranged coaxially with a distance L
And rotate at the angular velocity ω in the same direction.

The rotating cylinder 105 and the rotating shaft 106 are rotated by separate rotation introducing means (not shown) and can be driven independently.

FIG. 15 shows an example in which the speed selector 900 is applied to the film forming apparatus 400 of the fourth embodiment shown in FIG. At the time of film formation by the film forming apparatus 400, as shown in FIG. 15, the rotating cylinder 105 and the rotating shaft 106 are set in the nozzle chamber 4 so as to be parallel to the ultrafine particle flow 6, and are rotated by a rotation introducing means (not shown). Rotated. Here, the ultrafine particle flow 6 that has passed through the slit 102 reaches the disk 103 after a time t. At that time, the ultrafine particle stream 6 can pass through the slit 104 if the slit 104 is just there.

If the velocity of the ultrafine particle flow 6 is V, the distance between the disks is L, the phase angle between the disks 91 and 93 is φ ₀ , and the rotational angular velocity of the disks is ω, t = L / v = The relationship φ ₀ / ω holds.

[0069] Since in practice the slit 104 has a width W, caused certain width in phi is, the speed V at which passing of _{(ωL / φ max) <v} <(ωL / φ min) (2) A range of things come in.

Assuming that the radius of the disk is r ₀ , φ _min = φ ₀ − (W / r ₀ ) and φ _max = φ
₀ + to become (W _{/ r} 0).

As a result, the flow of ultrafine particles limited to the velocity in the range of the above equation (2) passes through the plasma, so that the interaction time with the plasma is limited to a time range corresponding to the velocity range. This is convenient when a reaction layer is formed on the surface of the ultrafine particles by a plasma reaction to a predetermined thickness.

In particular, an Al aerosol is used to produce an MIM element by depositing ultrafine Al particles having an oxide layer (Al ₂ O ₃ ) formed on the surface, or an oxide layer (SiO 2) is used by using an aerosol of Si. ₂ ) It is effective in the production of a MIS device by depositing ultrafine Si particles formed on the surface.

[0073] In the case of the speed selector 900, where since the rotational shaft and the rotation cylinder can be rotated at independently and separately of the rotating introduction means, optionally a phase angle phi ₀ of the disc between Can be set. This eliminates the need to replace the speed selector with atmospheric pressure in the apparatus for each speed range to be set, and allows a single speed selector to freely select a time range in which the plasma passes through the plasma.

In order to increase the efficiency of film formation, a disk may be provided with a plurality of slits and a plurality of places where the flow of ultrafine particles can pass may be used.

Further, the case where the main speed selector 900 is disposed in the nozzle chamber 4 has been described here.
Even if it is arranged inside, it can function sufficiently.

Although the preferred embodiments of the present invention have been described in detail, the present invention is not limited to the specific embodiments, and various modifications may be made within the scope of the present invention described in the appended claims. Can be modified and changed.

[0077]

As is apparent from the above description, according to the present invention, the supply of the film forming energy when the ultrafine particle material is sprayed onto the substrate and the supply of the ultrafine particle activation energy by the plasma are independent. Control. Therefore, the ultrafine particle material is activated without melting, and the bonding between the ultrafine particles and the substrate or the ultrafine particles is promoted, and while maintaining the crystallinity of the ultrafine particles, dense and good film properties and good adhesion to the substrate are obtained. It can be provided as a film forming apparatus capable of forming a deposit having properties on a substrate.

Further, when the discharge electrode is not provided in the film forming chamber, the present invention can be provided as a film forming apparatus in which scattering of ultrafine particles by the electrode and instability of plasma due to electrode contamination are suppressed.

[Brief description of the drawings]

FIG. 1 is a view showing a film forming apparatus of a first embodiment.

FIG. 2 is a diagram illustrating an MIM element.

FIG. 3 is a view showing a film forming apparatus of a second embodiment.

FIG. 4 is a view showing a film forming apparatus of a third embodiment.

FIG. 5 is a view showing a film forming apparatus of a fourth embodiment.

FIG. 6 is a view showing a film forming apparatus of a fifth embodiment.

FIG. 7 is a view showing a film forming apparatus of a sixth embodiment.

FIG. 8 is a view showing a film forming apparatus of a seventh embodiment.

FIG. 9 is a view showing a film forming apparatus of an eighth embodiment.

FIG. 10 is a diagram showing a speed selector applicable to the film forming apparatus of the embodiment.

FIG. 11 is a view showing a disk of the speed selector of FIG. 10;

FIG. 12 is a diagram showing an example in which a speed selector is applied to the film forming apparatus of the fourth embodiment.

FIG. 13 is a diagram showing another speed selector applicable to the film forming apparatus of the embodiment.

FIG. 14 is a diagram showing a disk of the speed selector of FIG. 13;

FIG. 15 is a diagram showing an example in which another speed selector is applied to the film forming apparatus of the fourth embodiment.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 Gas introduction pipe 2 Film-forming chamber 3 Nozzle 4 Nozzle chamber 5 Partition wall 6 Ultrafine particle flow 7 Opening 8 Substrate 9 Substrate holder 10 Power supply means 11 Exhaust device 12 Exhaust device 100 Film-forming device

──────────────────────────────────────────────────続 き Continued on the front page (51) Int.Cl. ⁷ Identification symbol FI Theme coat ゛ (Reference) H05H 1/46 H05H 1/46 L

Claims (6)

[Claims] 1. A film forming apparatus for forming ultra fine particles in an aerosol on a substrate, comprising: a film forming chamber capable of introducing an active gas, an inert gas, or a mixed gas of both; A depressurizable nozzle chamber provided with a nozzle connected to a film forming chamber and forming a flow of the aerosol, wherein a partition is formed between the film forming chamber and the nozzle chamber, and the partition is the film forming chamber And an opening for maintaining the pressure difference between the nozzle chamber and allowing the ultrafine particles emitted from the nozzle to pass therethrough, holding the substrate in the film forming chamber so as to face the nozzle, and A substrate holder capable of displacing a relative position with respect to a nozzle is provided, and a power supply unit for applying a plasma generation voltage to the substrate holder is provided as a plasma generation unit that does not hinder the flight of the ultrafine particles toward the substrate. Was Film-forming apparatus which is characterized the door. 2. A film-forming apparatus for forming ultra-fine particles in an aerosol on a substrate, comprising: a film-forming chamber capable of introducing an active gas, an inert gas, or a mixed gas thereof; A depressurizable nozzle chamber provided with a nozzle connected to a film forming chamber and forming a flow of the aerosol; forming a partition between the film forming chamber and the nozzle chamber; And an opening capable of maintaining the pressure difference between the nozzle chamber and allowing the ultrafine particles emitted from the nozzle to pass therethrough, holding the substrate in the film forming chamber so as to face the nozzle, and A substrate holder capable of displacing the relative position with respect to a nozzle is provided, and a high-frequency induction coil is wound around the film forming chamber as plasma generation means that does not hinder the flight of the ultrafine particles toward the substrate. Characterized by Membrane device. 3. A film-forming apparatus for forming ultra-fine particles in an aerosol on a substrate, comprising: a film-forming chamber capable of introducing an active gas, an inert gas, or a mixed gas thereof; A depressurizable nozzle chamber provided with a nozzle connected to a film forming chamber and forming a flow of the aerosol, wherein a partition is formed between the film forming chamber and the nozzle chamber, and the partition is the film forming chamber And an opening capable of maintaining the pressure difference between the nozzle chamber and allowing the ultrafine particles emitted from the nozzle to pass therethrough, holding the substrate in the film forming chamber so as to face the nozzle, and A substrate holder capable of displacing a relative position with respect to a nozzle is provided. As a plasma generation unit that does not hinder the flight of the ultrafine particles toward the substrate, an antenna is provided around the film forming chamber and an electromagnetic coil is provided outside the antenna. Wound And it features a silicon wave discharge apparatus, film formation apparatus, characterized in that. 4. A film forming apparatus for forming ultra fine particles in an aerosol on a substrate, comprising: a film forming chamber capable of introducing an active gas, an inert gas, or a mixed gas of both; A depressurizable nozzle chamber provided with a nozzle connected to a film forming chamber and forming a flow of the aerosol, wherein a partition is formed between the film forming chamber and the nozzle chamber, and the partition is the film forming chamber And an opening capable of maintaining the pressure difference between the nozzle chamber and allowing the ultrafine particles emitted from the nozzle to pass therethrough, holding the substrate in the film forming chamber so as to face the nozzle, and A substrate holder capable of displacing a relative position with respect to a nozzle is provided, and a microwave introduction window is provided on the film forming chamber side as plasma generation means that does not hinder the flight of the ultrafine particles toward the substrate. Film forming apparatus characterized by the following 5. A film forming apparatus for forming ultrafine particles in an aerosol on a substrate, comprising: a film forming chamber capable of introducing an active gas, an inert gas, or a mixed gas of both, and A depressurizable nozzle chamber provided with a nozzle connected to a film forming chamber and forming a flow of the aerosol, wherein a partition is formed between the film forming chamber and the nozzle chamber, and the partition is the film forming chamber And an opening capable of maintaining the pressure difference between the nozzle chamber and allowing the ultrafine particles emitted from the nozzle to pass therethrough, holding the substrate in the film forming chamber so as to face the nozzle, and A substrate holder capable of displacing a relative position with respect to a nozzle is provided. As a plasma generation unit that does not hinder the flight of the ultrafine particles toward the substrate, a resonance magnetic field is provided around the film formation chamber, and Microwave radiation device Are connected, the film forming apparatus characterized by. 6. A film-forming apparatus for forming ultra-fine particles in an aerosol on a substrate, comprising: a film-forming chamber capable of introducing an active gas, an inert gas, or a mixed gas thereof; A depressurizable nozzle chamber provided with a nozzle connected to a film forming chamber and forming a flow of the aerosol, wherein a partition is formed between the film forming chamber and the nozzle chamber, and the partition is the film forming chamber And an opening capable of maintaining the pressure difference between the nozzle chamber and allowing the ultrafine particles emitted from the nozzle to pass therethrough, holding the substrate in the film forming chamber so as to face the nozzle, and A substrate holder capable of displacing a relative position with respect to a nozzle is provided, and a ring-shaped electrode is provided around the film forming chamber as plasma generation means that does not hinder the flight of the ultrafine particles toward the substrate. High frequency power supply connected Is to have, the film forming apparatus characterized by.