JPH11224885A - Semiconductor device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a semiconductor device with high reliability by preventing the peeling off of an insulating resin layer, due to moisture absorbed by the insulating resin layer. SOLUTION: This semiconductor device is provided with an insulating resin layer 20 formed by opening an electrode 11 on the main surface of a semiconductor chip 10, metal wiring 30 formed on the electrode 11 and the insulating resin layer 20 and provided with a land 31, a solder resist 40 formed by opening the land 31, a through-hole 50 passing through the solder resist 40 and the insulating resin layer 20 reaching the main surface of the semiconductor chip 10 and a metal ball 60 provided on the land 31. Since the moisture absorbed by the insulating resin layer 20 is discharged from the exposed surface of the insulating resin layer 20 at the through-hole 50 to the outside of the semiconductor device, the peeling off of the insulating resin layer 20 due to the moisture is prevented, and the semiconductor device with the high reliability is provided.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device having a semiconductor element such as a transistor, and more particularly to a semiconductor device capable of securing reliability of connection with an external device.

[0002]

2. Description of the Related Art In recent years, as electronic devices have become smaller and more sophisticated, semiconductor devices have been required to be smaller, denser and faster. For this reason, for example, LOC (lead-on-chip) or SON (small outline non-lead) is used as a memory package.
ΜBG using TAB tape
A (Micro ball grid array)
No. 6-504408).

Hereinafter, a conventional semiconductor device called μBGA and a method of manufacturing the same will be described with reference to FIG. FIG. 3 is a cross-sectional view showing a conventional semiconductor device called μBGA. 3, reference numeral 101 denotes a semiconductor chip having a built-in semiconductor element such as a transistor; 102, a wiring circuit sheet provided on the semiconductor chip 101 and made of resin; 103, a semiconductor chip 101 and a wiring circuit sheet 1;
02, a flexible low-modulus material interposed between
Is a partial lead of the wiring circuit sheet 102, 105 is an electrode of the semiconductor chip 101, 106 is an electrode of the wiring circuit sheet 102, an external electrode for connecting the semiconductor device to an external device, and 107 is on the external electrode 106. Are metal balls provided on the surface. As shown in FIG.
The semiconductor device called A has a structure in which a wiring circuit sheet 102 is bonded to a semiconductor chip 101 via a low elastic modulus material 103, and an electrode 105 of the semiconductor chip 101 and an external electrode 106 of the wiring circuit sheet 102 are connected to each other. , Are electrically connected via the partial leads 104.

Next, a method of manufacturing a conventional semiconductor device called μBGA will be described with reference to FIG. First, the external electrode 106 and the external electrode 10 are formed on the semiconductor chip 101.
The wiring circuit sheet 102 having the partial leads 104 extended from 6 is joined via the low elastic modulus material 103. The low elastic modulus material 103 is an insulating resin and has an adhesive function. Next, the partial lead 104 and the electrode 105 are connected by a conventional thermocompression bonding technique or an ultrasonic bonding technique which is usually used when electrically connecting in a “TAB” (tape automated bonding) operation. Next, the connection portion is reinforced by applying a sealing resin. Next, after placing the metal ball 107 on the external electrode 106, the external electrode 106 and the metal ball 107 are melt-bonded. By the above method, a semiconductor device called μBGA has been manufactured.

[0005]

However, according to the above-described conventional semiconductor device, since the low elastic modulus material 103 absorbs moisture, that is, absorbs moisture in the atmosphere,
In a high-temperature atmosphere due to solder reflow or the like when a semiconductor device is mounted on a printed circuit board or the like, absorbed moisture evaporates from the low elastic modulus material 103. Therefore, at the interface between the semiconductor chip 101 and the low-modulus material 103 or at the interface between the low-modulus material 103 and the wiring circuit sheet 102, peeling due to vaporized moisture occurs, and the connection reliability is reduced. There was a problem.

An object of the present invention is to solve the above conventional problems and to provide a semiconductor device having high reliability.

[0007]

In order to achieve the above-mentioned object, the present invention provides means for a semiconductor device according to the first to third aspects of the present invention.

According to a first aspect of the present invention, there is provided a semiconductor chip having an electrode on a main surface, and an insulating resin layer formed by opening an electrode on the main surface. And a metal wiring connected to the electrode and formed over the insulating resin layer, a protective film made of an insulating substance having a property of repelling a conductive material, and a through hole penetrating the protective film and reaching at least the insulating resin layer. And

Thus, even if heat is applied during mounting or the like, the moisture absorbed in the insulating resin layer is removed from the surface of the insulating resin layer exposed from the bottom surface of the through hole penetrating the protective film. Released outside the device. Therefore, since stress caused by moisture is suppressed in the insulating resin layer, separation does not occur at the interface between the insulating resin layer and the semiconductor chip or the protective film, and a highly reliable semiconductor device is realized. .

According to a second aspect of the present invention, in the semiconductor device of the first aspect, the through hole may further penetrate the insulating resin layer and reach the main surface of the semiconductor chip.

Thus, even if heat is applied at the time of mounting or the like, moisture absorbed in the insulating resin layer is exposed in the through-hole penetrating the protective film and the insulating resin layer. It is effectively released from the inner wall surface to the outside of the semiconductor device. Therefore, since stress caused by moisture is more effectively suppressed in the insulating resin layer, separation does not occur at the interface between the insulating resin layer and the semiconductor chip or the protective film, and a semiconductor having higher reliability is obtained. The device is realized.

According to a third aspect of the present invention, the semiconductor device according to the first or second aspect further includes a protruding electrode formed in the opening penetrating the protective film and connected to the metal wiring. be able to.

Thus, signals can be more reliably input and output between the semiconductor device and the external device via the protruding electrodes.

[0014]

(First Embodiment) A first embodiment of the present invention will be described below with reference to FIG. FIG. 1 is a sectional view showing a semiconductor device according to the present embodiment. In FIG. 1, reference numeral 10 denotes a semiconductor chip having a built-in semiconductor integrated circuit including semiconductor elements such as transistors. On the main surface of the semiconductor chip 10, a plurality of electrodes 11 are arranged in the vicinity of the peripheral portion, and a passivation (not shown) is formed by opening each of the electrodes 11.
An insulating resin layer 20 is provided on the main surface of the semiconductor chip 10 so as to open each electrode 11 and form a flat portion that rises at the center. The metal wiring 30 formed so as to cover the electrode 11 is
0 on the main surface of the semiconductor chip 1 and the insulating resin layer 20.
0, ie, in the direction facing the peripheral portion where each electrode 11 is formed. On a main surface of the semiconductor chip 10, a solder resist 40 is formed by opening a land 31 which is a part of the metal wiring 30 and connects a semiconductor device to an external device (not shown). A through hole 21 penetrates the insulating resin layer 20 and a through hole 41 penetrates the solder resist 40. The through hole 21 and the through hole 41 together form one through hole 50. I do. This allows
The insulating resin layer 20 and the solder resist 40 are exposed on the inner surface of the through hole 50, and the semiconductor chip 1 is formed on the bottom surface.
0 main surface is exposed. On the land 31, a metal ball 60 as a protruding electrode is provided. That is, the land 3 exposed at the opening of the solder resist 40
1 has a structure in which a metal ball 60 is joined.

As described above, according to the semiconductor device of the present embodiment, on the main surface of the semiconductor chip 10, the semiconductor resin penetrates the insulating resin layer 20 and the solder resist 40, which are sequentially laminated. The vaporized water is effectively released from the insulating resin layer 20 to the outside of the semiconductor device through the through hole 50 reaching the main surface of the chip 10. Therefore, even if heat is applied at the time of mounting or the like, the stress caused by the moisture absorbed in the insulating resin layer 20 can be suppressed, so that the interface between the semiconductor chip 10 and the insulating resin layer 20 or the insulating resin layer A semiconductor device in which separation does not occur at the interface between the solder resist 20 and the solder resist 40 is realized.

A method for manufacturing a semiconductor device according to this embodiment will be described with reference to FIG.

First, a resin made of a photosensitive insulator is applied to the main surface of the semiconductor chip 10 and dried to form a resin film.
And the insulating resin layer 20 having the through hole 21 opened. In this case, for example, the cross-sectional shape of the insulating resin layer 20 in the opening near the electrode 11 is formed not in a direction perpendicular to the electrode 11 but in a tapered shape by using scattered light instead of parallel light in the exposure. As a material having photosensitivity for forming the insulating resin layer 20, any resin having an insulating property such as polyimide or epoxy may be used.

Next, a metal thin film layer made of, for example, Ti / Cu is formed on the entire main surface of the semiconductor chip 10 by a vacuum evaporation method, a sputtering method, a CVD method or an electroless plating method. Then, patterning is performed. Thus, the metal wiring 30 having the lands 31 is formed on the main surface of the semiconductor chip 10.

The patterning is performed as follows.
A photosensitive resist is applied on the metal thin film layer, and the resist other than a predetermined pattern portion is cured by exposure, and then the resist in the pattern portion is removed. A metal layer having a large thickness, for example, made of Cu is formed on the pattern portion by using electrolytic plating, and then the resist is melted and removed. Thereafter, the metal wiring 30 is formed by dissolving the metal thin film layer and leaving a metal layer having a large thickness.

A metal film is deposited on the entire surface, a resist is applied thereon, and a resist for an etching mask is formed on a predetermined pattern portion using a photolithography technique, and this resist is used as a mask. The wiring pattern may be formed by etching the metal layer.

Next, after a photosensitive solder resist is applied on the insulating resin layer 20, a solder resist 40 is formed by opening the through holes 21 and the lands 31 by using photolithography technology. I do. That is,
In the through hole 50 formed by the through hole 21 and the through hole 41 thereon, the main surface of the semiconductor chip 10 is exposed. Then, the portions other than the lands 31 in the metal wiring 30 are protected from the solder melted in a post-process such as reflow by the solder resist 40.

Next, made of solder, copper, nickel, etc.
Alternatively, a metal ball 60 made of solder-plated metal is placed on the land 31 so that the metal ball 60 and the land 3
1 and melt-bonded. Through the above steps, the semiconductor device according to the present embodiment can be obtained.

According to the method of manufacturing the semiconductor device of the present embodiment, the through holes 50 are formed in the insulating resin layer 20 and the solder resist 40 which are sequentially laminated on the main surface of the semiconductor chip 10. Can easily be manufactured.

In the above description, a photosensitive resin is applied to form the insulating resin layer 20. However, the present invention is not limited to this. Materials may be used. In this case, the semiconductor chip 10 is exposed and developed after a film-like insulating material is bonded onto the main surface of the semiconductor chip 10.
At the same time, the through holes 21 are formed.

The cross section of the opening of the insulating resin layer 20 was formed in a tapered shape by using scattered light. Alternatively, the cross-sectional shape of the opening of the insulating resin layer 20 may be formed in a tapered shape by performing exposure using parallel light and controlling a temperature profile in heat treatment after development.

Further, insulating materials having no photosensitivity can be used. In this case, the electrodes 11 of the semiconductor chip 10 are exposed by mechanical processing such as laser or plasma, or chemical processing such as etching.

Although Ti / Cu was used as the metal thin film layer, TiW, Au, Pd, Cr, W,
Cu, Ni or the like may be used.

(Second Embodiment) Hereinafter, a second embodiment of the present invention will be described with reference to FIG. FIG.
1 is a sectional view showing a semiconductor device according to the present embodiment.
The same components as those in the first embodiment are denoted by the same reference numerals as those in FIG. 1, and description thereof will be omitted.

In the present embodiment, the through holes for discharging the vaporized moisture in the insulating resin layer 20 are formed through the solder resist 40 instead of the through holes 50 in the first embodiment. It is what it was.

In FIG. 2, a through hole 41 is formed through the solder resist 40. This allows
The surface of the insulating resin layer 20 is exposed at the bottom of the through hole 41.

According to the semiconductor device of this embodiment, on the main surface of the semiconductor chip 10, the insulating resin layer 2 penetrates the solder resist 40 provided on the insulating resin layer 20.
Through the through hole 41 reaching the surface of the insulating resin layer 2
Water vaporized from zero is released to the outside of the semiconductor device. Therefore, even if heat is applied during mounting, etc.,
Since the stress caused by the moisture absorbed in the insulating resin layer 20 can be suppressed, no separation occurs at the interface between the semiconductor chip 10 and the insulating resin layer 20 or at the interface between the insulating resin layer 20 and the solder resist 40. A semiconductor device is realized.

Instead of the step of forming the insulating resin layer 20 by opening the portion of the electrode 11 and the through hole 21 in the first embodiment, a process of opening only the portion of the electrode 11 is performed. The semiconductor device according to the present embodiment can be easily manufactured.

[0033]

According to the first and second aspects of the present invention, the moisture absorbed in the insulating resin layer is released from the exposed surface of the insulating resin layer to the outside of the semiconductor device through the through hole. . Therefore, even when heat is applied at the time of mounting or the like, stress due to moisture is suppressed, so that separation does not occur at the interface between the insulating resin layer and the semiconductor chip or the protective film, and high reliability is obtained. A semiconductor device is realized.

According to the third aspect of the present invention, signals can be more reliably input and output between the semiconductor device and the external device via the protruding electrodes, so that a semiconductor device having higher reliability can be obtained. Is achieved.

[Brief description of the drawings]

FIG. 1 is a sectional view showing a semiconductor device according to a first embodiment of the present invention.

FIG. 2 is a sectional view showing a semiconductor device according to a second embodiment of the present invention.

FIG. 3 is a cross-sectional view illustrating a conventional semiconductor device.

[Explanation of symbols]

 Reference Signs List 10 semiconductor chip 11 electrode 20 insulating resin layer 21, 41, 50 through hole 30 metal wiring 31 land 40 solder resist 60 metal ball

 ──────────────────────────────────────────────────の Continuing on the front page (72) Inventor Takahiro Kumakawa 1-1, Komachi, Takatsuki-shi, Osaka Matsushita Electronics Corporation

Claims (3)

[Claims] A semiconductor chip having an electrode on a main surface; an insulating resin layer formed by opening the electrode on the main surface; and an insulating resin layer connected to the electrode and formed over the insulating resin layer. A semiconductor device, comprising: a metal wiring; a protective film made of an insulating substance having a property of repelling a conductive material; and a through hole penetrating the protective film and reaching at least the insulating resin layer. 2. The semiconductor device according to claim 1, wherein said through hole further penetrates through said insulating resin layer and reaches a main surface of said semiconductor chip. 3. The semiconductor device according to claim 1, further comprising a protruding electrode formed in an opening penetrating the protective film and connected to the metal wiring.