JPH1121427A - Epoxy resin molding material for sealing electronic part and electronic part - Google Patents
Epoxy resin molding material for sealing electronic part and electronic partInfo
- Publication number
- JPH1121427A JPH1121427A JP17383097A JP17383097A JPH1121427A JP H1121427 A JPH1121427 A JP H1121427A JP 17383097 A JP17383097 A JP 17383097A JP 17383097 A JP17383097 A JP 17383097A JP H1121427 A JPH1121427 A JP H1121427A
- Authority
- JP
- Japan
- Prior art keywords
- epoxy resin
- group
- molding material
- resin composition
- carbon atoms
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000003822 epoxy resin Substances 0.000 title claims abstract description 60
- 229920000647 polyepoxide Polymers 0.000 title claims abstract description 60
- 239000012778 molding material Substances 0.000 title claims abstract description 33
- 238000007789 sealing Methods 0.000 title claims abstract description 15
- 239000000203 mixture Substances 0.000 claims abstract description 19
- 239000003795 chemical substances by application Substances 0.000 claims abstract description 15
- 125000000217 alkyl group Chemical group 0.000 claims abstract description 11
- 229910052739 hydrogen Inorganic materials 0.000 claims abstract description 10
- 239000001257 hydrogen Substances 0.000 claims abstract description 10
- 239000006087 Silane Coupling Agent Substances 0.000 claims abstract description 9
- 239000011256 inorganic filler Substances 0.000 claims abstract description 8
- 229910003475 inorganic filler Inorganic materials 0.000 claims abstract description 8
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 claims abstract description 7
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 claims abstract description 7
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 claims abstract description 7
- 125000003545 alkoxy group Chemical group 0.000 claims abstract description 5
- -1 silane compound Chemical class 0.000 claims description 19
- 125000004432 carbon atom Chemical group C* 0.000 claims description 15
- 229910000077 silane Inorganic materials 0.000 claims description 7
- 239000004215 Carbon black (E152) Substances 0.000 claims description 6
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 6
- 229930195733 hydrocarbon Natural products 0.000 claims description 6
- 150000002430 hydrocarbons Chemical class 0.000 claims description 6
- 229910052736 halogen Inorganic materials 0.000 claims description 3
- 150000002367 halogens Chemical class 0.000 claims description 3
- 150000002431 hydrogen Chemical group 0.000 claims description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 abstract description 9
- 229910052802 copper Inorganic materials 0.000 abstract description 9
- 239000010949 copper Substances 0.000 abstract description 9
- 125000004435 hydrogen atom Chemical class [H]* 0.000 abstract 1
- 239000011342 resin composition Substances 0.000 abstract 1
- 230000001629 suppression Effects 0.000 abstract 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 11
- 229920005989 resin Polymers 0.000 description 10
- 239000011347 resin Substances 0.000 description 10
- 230000000052 comparative effect Effects 0.000 description 8
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 description 7
- 238000000034 method Methods 0.000 description 7
- 239000004065 semiconductor Substances 0.000 description 7
- IISBACLAFKSPIT-UHFFFAOYSA-N bisphenol A Chemical compound C=1C=C(O)C=CC=1C(C)(C)C1=CC=C(O)C=C1 IISBACLAFKSPIT-UHFFFAOYSA-N 0.000 description 6
- 239000007822 coupling agent Substances 0.000 description 6
- 229910000679 solder Inorganic materials 0.000 description 6
- 125000001449 isopropyl group Chemical group [H]C([H])([H])C([H])(*)C([H])([H])[H] 0.000 description 5
- 238000000465 moulding Methods 0.000 description 5
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- ADCOVFLJGNWWNZ-UHFFFAOYSA-N antimony trioxide Chemical compound O=[Sb]O[Sb]=O ADCOVFLJGNWWNZ-UHFFFAOYSA-N 0.000 description 4
- PXKLMJQFEQBVLD-UHFFFAOYSA-N bisphenol F Chemical compound C1=CC(O)=CC=C1CC1=CC=C(O)C=C1 PXKLMJQFEQBVLD-UHFFFAOYSA-N 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 229920003986 novolac Polymers 0.000 description 4
- 238000012360 testing method Methods 0.000 description 4
- RIOQSEWOXXDEQQ-UHFFFAOYSA-N triphenylphosphine Chemical compound C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1 RIOQSEWOXXDEQQ-UHFFFAOYSA-N 0.000 description 4
- HRSLYNJTMYIRHM-UHFFFAOYSA-N 2-[[4-[3,5-dimethyl-4-(oxiran-2-ylmethoxy)phenyl]-2,6-dimethylphenoxy]methyl]oxirane Chemical group CC1=CC(C=2C=C(C)C(OCC3OC3)=C(C)C=2)=CC(C)=C1OCC1CO1 HRSLYNJTMYIRHM-UHFFFAOYSA-N 0.000 description 3
- WSFSSNUMVMOOMR-UHFFFAOYSA-N Formaldehyde Chemical compound O=C WSFSSNUMVMOOMR-UHFFFAOYSA-N 0.000 description 3
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 3
- UMHKOAYRTRADAT-UHFFFAOYSA-N [hydroxy(octoxy)phosphoryl] octyl hydrogen phosphate Chemical compound CCCCCCCCOP(O)(=O)OP(O)(=O)OCCCCCCCC UMHKOAYRTRADAT-UHFFFAOYSA-N 0.000 description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
- 239000005350 fused silica glass Substances 0.000 description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000002156 mixing Methods 0.000 description 3
- 150000002989 phenols Chemical class 0.000 description 3
- 238000000926 separation method Methods 0.000 description 3
- 239000001993 wax Substances 0.000 description 3
- KJCVRFUGPWSIIH-UHFFFAOYSA-N 1-naphthol Chemical compound C1=CC=C2C(O)=CC=CC2=C1 KJCVRFUGPWSIIH-UHFFFAOYSA-N 0.000 description 2
- JWAZRIHNYRIHIV-UHFFFAOYSA-N 2-naphthol Chemical compound C1=CC=CC2=CC(O)=CC=C21 JWAZRIHNYRIHIV-UHFFFAOYSA-N 0.000 description 2
- LTPBRCUWZOMYOC-UHFFFAOYSA-N Beryllium oxide Chemical compound O=[Be] LTPBRCUWZOMYOC-UHFFFAOYSA-N 0.000 description 2
- VTYYLEPIZMXCLO-UHFFFAOYSA-L Calcium carbonate Chemical compound [Ca+2].[O-]C([O-])=O VTYYLEPIZMXCLO-UHFFFAOYSA-L 0.000 description 2
- BRLQWZUYTZBJKN-UHFFFAOYSA-N Epichlorohydrin Chemical compound ClCC1CO1 BRLQWZUYTZBJKN-UHFFFAOYSA-N 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 2
- AFCARXCZXQIEQB-UHFFFAOYSA-N N-[3-oxo-3-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)propyl]-2-[[3-(trifluoromethoxy)phenyl]methylamino]pyrimidine-5-carboxamide Chemical compound O=C(CCNC(=O)C=1C=NC(=NC=1)NCC1=CC(=CC=C1)OC(F)(F)F)N1CC2=C(CC1)NN=N2 AFCARXCZXQIEQB-UHFFFAOYSA-N 0.000 description 2
- KFSLWBXXFJQRDL-UHFFFAOYSA-N Peracetic acid Chemical compound CC(=O)OO KFSLWBXXFJQRDL-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 150000001299 aldehydes Chemical class 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 2
- 239000006229 carbon black Substances 0.000 description 2
- YCIMNLLNPGFGHC-UHFFFAOYSA-N catechol Chemical compound OC1=CC=CC=C1O YCIMNLLNPGFGHC-UHFFFAOYSA-N 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000013329 compounding Methods 0.000 description 2
- JJQZDUKDJDQPMQ-UHFFFAOYSA-N dimethoxy(dimethyl)silane Chemical compound CO[Si](C)(C)OC JJQZDUKDJDQPMQ-UHFFFAOYSA-N 0.000 description 2
- 238000011156 evaluation Methods 0.000 description 2
- 239000000945 filler Substances 0.000 description 2
- 239000003063 flame retardant Substances 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 230000017525 heat dissipation Effects 0.000 description 2
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 2
- 229910052742 iron Inorganic materials 0.000 description 2
- YZPARGTXKUIJLJ-UHFFFAOYSA-N n-[3-[dimethoxy(methyl)silyl]propyl]aniline Chemical compound CO[Si](C)(OC)CCCNC1=CC=CC=C1 YZPARGTXKUIJLJ-UHFFFAOYSA-N 0.000 description 2
- QWVGKYWNOKOFNN-UHFFFAOYSA-N o-cresol Chemical compound CC1=CC=CC=C1O QWVGKYWNOKOFNN-UHFFFAOYSA-N 0.000 description 2
- 150000003003 phosphines Chemical class 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- 238000001721 transfer moulding Methods 0.000 description 2
- WYTZZXDRDKSJID-UHFFFAOYSA-N (3-aminopropyl)triethoxysilane Chemical compound CCO[Si](OCC)(OCC)CCCN WYTZZXDRDKSJID-UHFFFAOYSA-N 0.000 description 1
- AZQWKYJCGOJGHM-UHFFFAOYSA-N 1,4-benzoquinone Chemical compound O=C1C=CC(=O)C=C1 AZQWKYJCGOJGHM-UHFFFAOYSA-N 0.000 description 1
- IEKHISJGRIEHRE-UHFFFAOYSA-N 16-methylheptadecanoic acid;propan-2-ol;titanium Chemical compound [Ti].CC(C)O.CC(C)CCCCCCCCCCCCCCC(O)=O.CC(C)CCCCCCCCCCCCCCC(O)=O.CC(C)CCCCCCCCCCCCCCC(O)=O IEKHISJGRIEHRE-UHFFFAOYSA-N 0.000 description 1
- HECLRDQVFMWTQS-RGOKHQFPSA-N 1755-01-7 Chemical compound C1[C@H]2[C@@H]3CC=C[C@@H]3[C@@H]1C=C2 HECLRDQVFMWTQS-RGOKHQFPSA-N 0.000 description 1
- RNFJDJUURJAICM-UHFFFAOYSA-N 2,2,4,4,6,6-hexaphenoxy-1,3,5-triaza-2$l^{5},4$l^{5},6$l^{5}-triphosphacyclohexa-1,3,5-triene Chemical compound N=1P(OC=2C=CC=CC=2)(OC=2C=CC=CC=2)=NP(OC=2C=CC=CC=2)(OC=2C=CC=CC=2)=NP=1(OC=1C=CC=CC=1)OC1=CC=CC=C1 RNFJDJUURJAICM-UHFFFAOYSA-N 0.000 description 1
- AHDSRXYHVZECER-UHFFFAOYSA-N 2,4,6-tris[(dimethylamino)methyl]phenol Chemical compound CN(C)CC1=CC(CN(C)C)=C(O)C(CN(C)C)=C1 AHDSRXYHVZECER-UHFFFAOYSA-N 0.000 description 1
- OZRVXYJWUUMVOW-UHFFFAOYSA-N 2-[[4-[4-(oxiran-2-ylmethoxy)phenyl]phenoxy]methyl]oxirane Chemical group C1OC1COC(C=C1)=CC=C1C(C=C1)=CC=C1OCC1CO1 OZRVXYJWUUMVOW-UHFFFAOYSA-N 0.000 description 1
- KKOHCQAVIJDYAF-UHFFFAOYSA-N 2-dodecylbenzenesulfonic acid;propan-2-ol;titanium Chemical compound [Ti].CC(C)O.CCCCCCCCCCCCC1=CC=CC=C1S(O)(=O)=O.CCCCCCCCCCCCC1=CC=CC=C1S(O)(=O)=O.CCCCCCCCCCCCC1=CC=CC=C1S(O)(=O)=O KKOHCQAVIJDYAF-UHFFFAOYSA-N 0.000 description 1
- LXBGSDVWAMZHDD-UHFFFAOYSA-N 2-methyl-1h-imidazole Chemical compound CC1=NC=CN1 LXBGSDVWAMZHDD-UHFFFAOYSA-N 0.000 description 1
- QTWJRLJHJPIABL-UHFFFAOYSA-N 2-methylphenol;3-methylphenol;4-methylphenol Chemical compound CC1=CC=C(O)C=C1.CC1=CC=CC(O)=C1.CC1=CC=CC=C1O QTWJRLJHJPIABL-UHFFFAOYSA-N 0.000 description 1
- ZCUJYXPAKHMBAZ-UHFFFAOYSA-N 2-phenyl-1h-imidazole Chemical compound C1=CNC(C=2C=CC=CC=2)=N1 ZCUJYXPAKHMBAZ-UHFFFAOYSA-N 0.000 description 1
- OXYZDRAJMHGSMW-UHFFFAOYSA-N 3-chloropropyl(trimethoxy)silane Chemical compound CO[Si](OC)(OC)CCCCl OXYZDRAJMHGSMW-UHFFFAOYSA-N 0.000 description 1
- AOAUDAYOMHDUEU-UHFFFAOYSA-N 3-silylpropane-1-thiol Chemical compound [SiH3]CCCS AOAUDAYOMHDUEU-UHFFFAOYSA-N 0.000 description 1
- UUEWCQRISZBELL-UHFFFAOYSA-N 3-trimethoxysilylpropane-1-thiol Chemical compound CO[Si](OC)(OC)CCCS UUEWCQRISZBELL-UHFFFAOYSA-N 0.000 description 1
- XDLMVUHYZWKMMD-UHFFFAOYSA-N 3-trimethoxysilylpropyl 2-methylprop-2-enoate Chemical compound CO[Si](OC)(OC)CCCOC(=O)C(C)=C XDLMVUHYZWKMMD-UHFFFAOYSA-N 0.000 description 1
- VPWNQTHUCYMVMZ-UHFFFAOYSA-N 4,4'-sulfonyldiphenol Chemical compound C1=CC(O)=CC=C1S(=O)(=O)C1=CC=C(O)C=C1 VPWNQTHUCYMVMZ-UHFFFAOYSA-N 0.000 description 1
- VGDAMJGKFYMEDE-UHFFFAOYSA-N 5-(dimethoxymethylsilyl)pentane-1,3-diamine Chemical compound NCCC(CC[SiH2]C(OC)OC)N VGDAMJGKFYMEDE-UHFFFAOYSA-N 0.000 description 1
- TYOXIFXYEIILLY-UHFFFAOYSA-N 5-methyl-2-phenyl-1h-imidazole Chemical compound N1C(C)=CN=C1C1=CC=CC=C1 TYOXIFXYEIILLY-UHFFFAOYSA-N 0.000 description 1
- 229910052582 BN Inorganic materials 0.000 description 1
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 1
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 description 1
- SVJYEULQDMLARR-UHFFFAOYSA-N C(C1CO1)OC=1C(=C(C(=CC1C)O)C=1C(=CC(=C(C1C)OCC1CO1)C)O)C Chemical compound C(C1CO1)OC=1C(=C(C(=CC1C)O)C=1C(=CC(=C(C1C)OCC1CO1)C)O)C SVJYEULQDMLARR-UHFFFAOYSA-N 0.000 description 1
- SRORDPCXIPXEAX-UHFFFAOYSA-N CCCCCCCCCCCCCP(CCCCCCCCCCCCC)(O)(OCCCCCCCC)OCCCCCCCC.CCCCCCCCCCCCCP(CCCCCCCCCCCCC)(O)(OCCCCCCCC)OCCCCCCCC Chemical compound CCCCCCCCCCCCCP(CCCCCCCCCCCCC)(O)(OCCCCCCCC)OCCCCCCCC.CCCCCCCCCCCCCP(CCCCCCCCCCCCC)(O)(OCCCCCCCC)OCCCCCCCC SRORDPCXIPXEAX-UHFFFAOYSA-N 0.000 description 1
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical compound C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 description 1
- 239000005977 Ethylene Substances 0.000 description 1
- 229920000877 Melamine resin Polymers 0.000 description 1
- KNANZMNFPYPCHN-UHFFFAOYSA-N N'-[2-(dimethoxymethylsilyl)propan-2-yl]ethane-1,2-diamine Chemical compound COC(OC)[SiH2]C(C)(C)NCCN KNANZMNFPYPCHN-UHFFFAOYSA-N 0.000 description 1
- UEEJHVSXFDXPFK-UHFFFAOYSA-N N-dimethylaminoethanol Chemical compound CN(C)CCO UEEJHVSXFDXPFK-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 244000273256 Phragmites communis Species 0.000 description 1
- 235000014676 Phragmites communis Nutrition 0.000 description 1
- 239000004698 Polyethylene Substances 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- GSEJCLTVZPLZKY-UHFFFAOYSA-N Triethanolamine Chemical compound OCCN(CCO)CCO GSEJCLTVZPLZKY-UHFFFAOYSA-N 0.000 description 1
- 239000007983 Tris buffer Substances 0.000 description 1
- NOZAQBYNLKNDRT-UHFFFAOYSA-N [diacetyloxy(ethenyl)silyl] acetate Chemical compound CC(=O)O[Si](OC(C)=O)(OC(C)=O)C=C NOZAQBYNLKNDRT-UHFFFAOYSA-N 0.000 description 1
- 238000005299 abrasion Methods 0.000 description 1
- 230000002378 acidificating effect Effects 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 125000002723 alicyclic group Chemical group 0.000 description 1
- 239000004844 aliphatic epoxy resin Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- WNROFYMDJYEPJX-UHFFFAOYSA-K aluminium hydroxide Chemical compound [OH-].[OH-].[OH-].[Al+3] WNROFYMDJYEPJX-UHFFFAOYSA-K 0.000 description 1
- PEEDYJQEMCKDDX-UHFFFAOYSA-N antimony bismuth Chemical compound [Sb].[Bi] PEEDYJQEMCKDDX-UHFFFAOYSA-N 0.000 description 1
- 229940027987 antiseptic and disinfectant phenol and derivative Drugs 0.000 description 1
- 125000003710 aryl alkyl group Chemical group 0.000 description 1
- 239000011324 bead Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 description 1
- 229910052794 bromium Inorganic materials 0.000 description 1
- 229910000019 calcium carbonate Inorganic materials 0.000 description 1
- 239000000378 calcium silicate Substances 0.000 description 1
- 229910052918 calcium silicate Inorganic materials 0.000 description 1
- OYACROKNLOSFPA-UHFFFAOYSA-N calcium;dioxido(oxo)silane Chemical compound [Ca+2].[O-][Si]([O-])=O OYACROKNLOSFPA-UHFFFAOYSA-N 0.000 description 1
- 239000004203 carnauba wax Substances 0.000 description 1
- 235000013869 carnauba wax Nutrition 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000000748 compression moulding Methods 0.000 description 1
- 238000009833 condensation Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 229930003836 cresol Natural products 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 229910002026 crystalline silica Inorganic materials 0.000 description 1
- 229960002887 deanol Drugs 0.000 description 1
- GDVKFRBCXAPAQJ-UHFFFAOYSA-A dialuminum;hexamagnesium;carbonate;hexadecahydroxide Chemical compound [OH-].[OH-].[OH-].[OH-].[OH-].[OH-].[OH-].[OH-].[OH-].[OH-].[OH-].[OH-].[OH-].[OH-].[OH-].[OH-].[Mg+2].[Mg+2].[Mg+2].[Mg+2].[Mg+2].[Mg+2].[Al+3].[Al+3].[O-]C([O-])=O GDVKFRBCXAPAQJ-UHFFFAOYSA-A 0.000 description 1
- CRGRWBQSZSQVIE-UHFFFAOYSA-N diazomethylbenzene Chemical compound [N-]=[N+]=CC1=CC=CC=C1 CRGRWBQSZSQVIE-UHFFFAOYSA-N 0.000 description 1
- ZZNQQQWFKKTOSD-UHFFFAOYSA-N diethoxy(diphenyl)silane Chemical compound C=1C=CC=CC=1[Si](OCC)(OCC)C1=CC=CC=C1 ZZNQQQWFKKTOSD-UHFFFAOYSA-N 0.000 description 1
- MNFGEHQPOWJJBH-UHFFFAOYSA-N diethoxy-methyl-phenylsilane Chemical compound CCO[Si](C)(OCC)C1=CC=CC=C1 MNFGEHQPOWJJBH-UHFFFAOYSA-N 0.000 description 1
- GYZLOYUZLJXAJU-UHFFFAOYSA-N diglycidyl ether Chemical class C1OC1COCC1CO1 GYZLOYUZLJXAJU-UHFFFAOYSA-N 0.000 description 1
- AHUXYBVKTIBBJW-UHFFFAOYSA-N dimethoxy(diphenyl)silane Chemical compound C=1C=CC=CC=1[Si](OC)(OC)C1=CC=CC=C1 AHUXYBVKTIBBJW-UHFFFAOYSA-N 0.000 description 1
- PKTOVQRKCNPVKY-UHFFFAOYSA-N dimethoxy(methyl)silicon Chemical compound CO[Si](C)OC PKTOVQRKCNPVKY-UHFFFAOYSA-N 0.000 description 1
- CVQVSVBUMVSJES-UHFFFAOYSA-N dimethoxy-methyl-phenylsilane Chemical compound CO[Si](C)(OC)C1=CC=CC=C1 CVQVSVBUMVSJES-UHFFFAOYSA-N 0.000 description 1
- 239000004205 dimethyl polysiloxane Substances 0.000 description 1
- XXBDWLFCJWSEKW-UHFFFAOYSA-N dimethylbenzylamine Chemical compound CN(C)CC1=CC=CC=C1 XXBDWLFCJWSEKW-UHFFFAOYSA-N 0.000 description 1
- YYLGKUPAFFKGRQ-UHFFFAOYSA-N dimethyldiethoxysilane Chemical compound CCO[Si](C)(C)OCC YYLGKUPAFFKGRQ-UHFFFAOYSA-N 0.000 description 1
- HTDKEJXHILZNPP-UHFFFAOYSA-N dioctyl hydrogen phosphate Chemical compound CCCCCCCCOP(O)(=O)OCCCCCCCC HTDKEJXHILZNPP-UHFFFAOYSA-N 0.000 description 1
- XMQYIPNJVLNWOE-UHFFFAOYSA-N dioctyl hydrogen phosphite Chemical compound CCCCCCCCOP(O)OCCCCCCCC XMQYIPNJVLNWOE-UHFFFAOYSA-N 0.000 description 1
- ZZTCPWRAHWXWCH-UHFFFAOYSA-N diphenylmethanediamine Chemical compound C=1C=CC=CC=1C(N)(N)C1=CC=CC=C1 ZZTCPWRAHWXWCH-UHFFFAOYSA-N 0.000 description 1
- GPAYUJZHTULNBE-UHFFFAOYSA-N diphenylphosphine Chemical compound C=1C=CC=CC=1PC1=CC=CC=C1 GPAYUJZHTULNBE-UHFFFAOYSA-N 0.000 description 1
- NJLLQSBAHIKGKF-UHFFFAOYSA-N dipotassium dioxido(oxo)titanium Chemical compound [K+].[K+].[O-][Ti]([O-])=O NJLLQSBAHIKGKF-UHFFFAOYSA-N 0.000 description 1
- VTIXMGZYGRZMAW-UHFFFAOYSA-N ditridecyl hydrogen phosphite Chemical compound CCCCCCCCCCCCCOP(O)OCCCCCCCCCCCCC VTIXMGZYGRZMAW-UHFFFAOYSA-N 0.000 description 1
- 125000003700 epoxy group Chemical group 0.000 description 1
- FWDBOZPQNFPOLF-UHFFFAOYSA-N ethenyl(triethoxy)silane Chemical compound CCO[Si](OCC)(OCC)C=C FWDBOZPQNFPOLF-UHFFFAOYSA-N 0.000 description 1
- NKSJNEHGWDZZQF-UHFFFAOYSA-N ethenyl(trimethoxy)silane Chemical compound CO[Si](OC)(OC)C=C NKSJNEHGWDZZQF-UHFFFAOYSA-N 0.000 description 1
- WOXXJEVNDJOOLV-UHFFFAOYSA-N ethenyl-tris(2-methoxyethoxy)silane Chemical compound COCCO[Si](OCCOC)(OCCOC)C=C WOXXJEVNDJOOLV-UHFFFAOYSA-N 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 125000000524 functional group Chemical group 0.000 description 1
- 238000007429 general method Methods 0.000 description 1
- 239000003365 glass fiber Substances 0.000 description 1
- NEXSMEBSBIABKL-UHFFFAOYSA-N hexamethyldisilane Chemical compound C[Si](C)(C)[Si](C)(C)C NEXSMEBSBIABKL-UHFFFAOYSA-N 0.000 description 1
- 229960001545 hydrotalcite Drugs 0.000 description 1
- 229910001701 hydrotalcite Inorganic materials 0.000 description 1
- 150000002460 imidazoles Chemical class 0.000 description 1
- 238000001746 injection moulding Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000004898 kneading Methods 0.000 description 1
- VTHJTEIRLNZDEV-UHFFFAOYSA-L magnesium dihydroxide Chemical compound [OH-].[OH-].[Mg+2] VTHJTEIRLNZDEV-UHFFFAOYSA-L 0.000 description 1
- 239000000347 magnesium hydroxide Substances 0.000 description 1
- 229910001862 magnesium hydroxide Inorganic materials 0.000 description 1
- FPYJFEHAWHCUMM-UHFFFAOYSA-N maleic anhydride Chemical compound O=C1OC(=O)C=C1 FPYJFEHAWHCUMM-UHFFFAOYSA-N 0.000 description 1
- UJNZOIKQAUQOCN-UHFFFAOYSA-N methyl(diphenyl)phosphane Chemical compound C=1C=CC=CC=1P(C)C1=CC=CC=C1 UJNZOIKQAUQOCN-UHFFFAOYSA-N 0.000 description 1
- BFXIKLCIZHOAAZ-UHFFFAOYSA-N methyltrimethoxysilane Chemical compound CO[Si](C)(OC)OC BFXIKLCIZHOAAZ-UHFFFAOYSA-N 0.000 description 1
- PHQOGHDTIVQXHL-UHFFFAOYSA-N n'-(3-trimethoxysilylpropyl)ethane-1,2-diamine Chemical compound CO[Si](OC)(OC)CCCNCCN PHQOGHDTIVQXHL-UHFFFAOYSA-N 0.000 description 1
- KBJFYLLAMSZSOG-UHFFFAOYSA-N n-(3-trimethoxysilylpropyl)aniline Chemical compound CO[Si](OC)(OC)CCCNC1=CC=CC=C1 KBJFYLLAMSZSOG-UHFFFAOYSA-N 0.000 description 1
- FIZALOOFPVCKRG-UHFFFAOYSA-N n-[3-[diethoxy(methyl)silyl]propyl]-4-methoxyaniline Chemical compound CCO[Si](C)(OCC)CCCNC1=CC=C(OC)C=C1 FIZALOOFPVCKRG-UHFFFAOYSA-N 0.000 description 1
- NQKOSCFDFJKWOX-UHFFFAOYSA-N n-[3-[diethoxy(methyl)silyl]propyl]aniline Chemical compound CCO[Si](C)(OCC)CCCNC1=CC=CC=C1 NQKOSCFDFJKWOX-UHFFFAOYSA-N 0.000 description 1
- ZVNKDTRPKUHGII-UHFFFAOYSA-N n-[3-[dimethoxy(methyl)silyl]propyl]-4-methoxyaniline Chemical compound COC1=CC=C(NCCC[Si](C)(OC)OC)C=C1 ZVNKDTRPKUHGII-UHFFFAOYSA-N 0.000 description 1
- NXPPAOGUKPJVDI-UHFFFAOYSA-N naphthalene-1,2-diol Chemical compound C1=CC=CC2=C(O)C(O)=CC=C21 NXPPAOGUKPJVDI-UHFFFAOYSA-N 0.000 description 1
- 150000004780 naphthols Chemical class 0.000 description 1
- 125000001624 naphthyl group Chemical group 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 1
- JRZJOMJEPLMPRA-UHFFFAOYSA-N olefin Natural products CCCCCCCC=C JRZJOMJEPLMPRA-UHFFFAOYSA-N 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- ZCLUFPPYOPQBQL-UHFFFAOYSA-N oxiran-2-ylmethanamine 1,3,5-triazinane-2,4,6-trione Chemical compound NCC1CO1.O=c1[nH]c(=O)[nH]c(=O)[nH]1 ZCLUFPPYOPQBQL-UHFFFAOYSA-N 0.000 description 1
- 150000004965 peroxy acids Chemical class 0.000 description 1
- 239000005011 phenolic resin Substances 0.000 description 1
- RPGWZZNNEUHDAQ-UHFFFAOYSA-N phenylphosphine Chemical compound PC1=CC=CC=C1 RPGWZZNNEUHDAQ-UHFFFAOYSA-N 0.000 description 1
- 150000003014 phosphoric acid esters Chemical class 0.000 description 1
- 150000003018 phosphorus compounds Chemical class 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 229920000435 poly(dimethylsiloxane) Polymers 0.000 description 1
- 229920000768 polyamine Polymers 0.000 description 1
- 229920000573 polyethylene Polymers 0.000 description 1
- 229920000098 polyolefin Polymers 0.000 description 1
- 238000011417 postcuring Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000010298 pulverizing process Methods 0.000 description 1
- GHMLBKRAJCXXBS-UHFFFAOYSA-N resorcinol Chemical compound OC1=CC=CC(O)=C1 GHMLBKRAJCXXBS-UHFFFAOYSA-N 0.000 description 1
- 229960001755 resorcinol Drugs 0.000 description 1
- 238000012552 review Methods 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 239000000523 sample Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229920002545 silicone oil Polymers 0.000 description 1
- 229920002379 silicone rubber Polymers 0.000 description 1
- 239000004945 silicone rubber Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 150000003512 tertiary amines Chemical class 0.000 description 1
- TUQOTMZNTHZOKS-UHFFFAOYSA-N tributylphosphine Chemical compound CCCCP(CCCC)CCCC TUQOTMZNTHZOKS-UHFFFAOYSA-N 0.000 description 1
- GQIUQDDJKHLHTB-UHFFFAOYSA-N trichloro(ethenyl)silane Chemical compound Cl[Si](Cl)(Cl)C=C GQIUQDDJKHLHTB-UHFFFAOYSA-N 0.000 description 1
- CPUDPFPXCZDNGI-UHFFFAOYSA-N triethoxy(methyl)silane Chemical compound CCO[Si](C)(OCC)OCC CPUDPFPXCZDNGI-UHFFFAOYSA-N 0.000 description 1
- DQZNLOXENNXVAD-UHFFFAOYSA-N trimethoxy-[2-(7-oxabicyclo[4.1.0]heptan-4-yl)ethyl]silane Chemical compound C1C(CC[Si](OC)(OC)OC)CCC2OC21 DQZNLOXENNXVAD-UHFFFAOYSA-N 0.000 description 1
- BPSIOYPQMFLKFR-UHFFFAOYSA-N trimethoxy-[3-(oxiran-2-ylmethoxy)propyl]silane Chemical compound CO[Si](OC)(OC)CCCOCC1CO1 BPSIOYPQMFLKFR-UHFFFAOYSA-N 0.000 description 1
- YUYCVXFAYWRXLS-UHFFFAOYSA-N trimethoxysilane Chemical compound CO[SiH](OC)OC YUYCVXFAYWRXLS-UHFFFAOYSA-N 0.000 description 1
- BIKXLKXABVUSMH-UHFFFAOYSA-N trizinc;diborate Chemical compound [Zn+2].[Zn+2].[Zn+2].[O-]B([O-])[O-].[O-]B([O-])[O-] BIKXLKXABVUSMH-UHFFFAOYSA-N 0.000 description 1
- 239000005050 vinyl trichlorosilane Substances 0.000 description 1
- 235000012431 wafers Nutrition 0.000 description 1
- 229910052845 zircon Inorganic materials 0.000 description 1
- GFQYVLUOOAAOGM-UHFFFAOYSA-N zirconium(iv) silicate Chemical compound [Zr+4].[O-][Si]([O-])([O-])[O-] GFQYVLUOOAAOGM-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Epoxy Resins (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
- Compositions Of Macromolecular Compounds (AREA)
Abstract
Description
【0001】[0001]
【発明の属する技術分野】本発明は、成形性、信頼性に
優れたエポキシ樹脂組成物、電子部品封止用エポキシ樹
脂成形材料及びその成形材料で素子を封止した電子部品
に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an epoxy resin composition excellent in moldability and reliability, an epoxy resin molding material for encapsulating electronic components, and an electronic component in which elements are encapsulated with the molding material.
【0002】[0002]
【従来の技術】従来から、トランジスタ、IC等の電子
部品の素子封止の分野では生産性、コスト等の面から樹
脂封止が主流となり、エポキシ樹脂成形材料が広く用い
られている。この理由としては、エポキシ樹脂が作業
性、成形性、電気特性、耐湿性、耐熱性、機械特性、イ
ンサート品との接着性等の諸特性にバランスがとれてい
るためである。また、素子を搭載し外部との電気的なコ
ンタクトを確保するためのリードフレームとしては、表
面実装用パッケージでは主に鉄系の材質が用いられてき
た。2. Description of the Related Art Conventionally, in the field of element sealing of electronic components such as transistors and ICs, resin sealing has become the mainstream in terms of productivity and cost, and epoxy resin molding materials have been widely used. The reason for this is that the epoxy resin is well balanced in various properties such as workability, moldability, electrical properties, moisture resistance, heat resistance, mechanical properties, and adhesion to insert products. Further, as a lead frame for mounting an element and ensuring electrical contact with the outside, an iron-based material has been mainly used for a surface mounting package.
【0003】近年では、熱放散性、コストの面から銅系
のリードフレームを用いる製品が増加している。しか
し、銅系のリードフレームは熱放散性、コストの面での
メリットがある反面、その表面に酸化膜が出来易く、し
かもその酸化膜の強度が非常に低いという欠点を持って
いる。そのため、素子をリードフレームに固定する工
程、金線で素子とリードフレームを接続する工程等で加
えられる熱によってリードフレーム表面に酸化膜が形成
される。このような、表面に酸化膜が形成されたリード
フレームを従来の電子部品封止用エポキシ樹脂成形材料
で封止した場合、リードフレームと成形材料の界面に発
生する応力によって酸化膜が剥離し、電子部品としての
信頼性が著しく低下していた。In recent years, products using a copper-based lead frame have been increasing in terms of heat dissipation and cost. However, the copper-based lead frame has advantages in heat dissipation and cost, but has the disadvantage that an oxide film is easily formed on the surface and the strength of the oxide film is extremely low. Therefore, an oxide film is formed on the surface of the lead frame by heat applied in a step of fixing the element to the lead frame, a step of connecting the element and the lead frame with a gold wire, and the like. When such a lead frame having an oxide film formed on the surface is sealed with a conventional epoxy resin molding material for sealing electronic components, the oxide film peels off due to stress generated at the interface between the lead frame and the molding material. The reliability as an electronic component was significantly reduced.
【0004】この問題に対し、種々の対策が検討されて
きた。例えば、素子をリードフレームに固定する工程、
金線で素子とリードフレームを接続する工程等を、窒素
雰囲気中で行う、または比較的低温で行うことにより酸
化膜の形成を抑制し剥離を防止する方法がある。これら
の手法は、酸化膜の剥離の防止の点では有効だがコスト
や金線の接続強度が低下する点で実用的ではない。ま
た、銅フレームの表面をメッキで被覆して耐熱性を改善
する方法も効果は大きいがやはりコストの点で実用的で
はない。[0004] Various countermeasures have been studied for this problem. For example, a step of fixing the element to a lead frame,
There is a method in which the step of connecting the element and the lead frame with a gold wire or the like is performed in a nitrogen atmosphere or at a relatively low temperature to suppress formation of an oxide film and prevent peeling. These techniques are effective in preventing the separation of the oxide film, but are not practical in terms of cost and connection strength of the gold wire. A method of improving the heat resistance by coating the surface of the copper frame with plating is also effective, but is not practical in terms of cost.
【0005】一方、電子部品封止用エポキシ樹脂成形材
料からの改良としては、可撓化剤の添加、充填剤量の最
適化、離型剤の見直し等が提案されてきたが、成形性、
信頼性において電子部品封止用途の要求に堪えるものは
ない。また、2個のアルコキシ基とγーグリシド基を含
むカップリング剤を使用したエポキシ樹脂組成物がアル
ミニウムに対する腐食性が小さいことは既に報告されて
いる(特開昭60−179419)。しかし、これは官
能基をγーグリシド基に限定しており、銅に対する密着
性改善についても述べられていない。On the other hand, as improvements from the epoxy resin molding material for encapsulating electronic parts, it has been proposed to add a flexibilizing agent, optimize the amount of filler, and review the release agent.
There is no reliability that meets the requirements of electronic component sealing applications. It has already been reported that an epoxy resin composition using a coupling agent containing two alkoxy groups and a γ-glycid group has low corrosiveness to aluminum (JP-A-60-179419). However, this limits the functional group to a γ-glycidic group, and does not mention improvement in adhesion to copper.
【0006】以上のような背景から、本発明は、銅系の
リードフレームに対しても鉄系のリードフレームと同様
の信頼性、成形性を示す電子部品封止用エポキシ樹脂成
形材料が強く求められている。In view of the above background, the present invention strongly demands an epoxy resin molding material for encapsulating electronic parts, which has the same reliability and moldability as copper-based lead frames as well as iron-based lead frames. Have been.
【0007】本発明者らは、上記の課題を解決するため
鋭意研究を重ねた結果、特定のカップリング剤を配合す
ることにより、銅系リードフレームの酸化膜剥離の抑制
に顕著な効果が認められ、上記の要求を満足する成形材
料が得られることを見いだし、本発明を完成するに至っ
た。The inventors of the present invention have conducted intensive studies to solve the above-mentioned problems, and as a result, it has been found that the addition of a specific coupling agent has a remarkable effect in suppressing the separation of an oxide film from a copper-based lead frame. As a result, it was found that a molding material satisfying the above requirements was obtained, and the present invention was completed.
【0008】すなわち、本発明は、 (1)(A)エポキシ樹脂、(B)硬化剤、(C)シラ
ンカップリング剤、および(D)無機充填剤を必須成分
とし、(C)成分のシランカップリング剤が下記一般式
(I)で表されものであることを特徴とするエポキシ樹
脂組成物、That is, the present invention comprises (1) (A) an epoxy resin, (B) a curing agent, (C) a silane coupling agent, and (D) an inorganic filler as essential components, and (C) a silane component. An epoxy resin composition, wherein the coupling agent is represented by the following general formula (I):
【化5】 (ここで、R1は水素または炭素数1〜6のアルキル基
または炭素数1〜2のアルコキシ基、R2は炭素数1〜
6のアルキル基またはフェニル基、R3はメチル基また
はエチル基で、nは1〜6の数を示す。) (2)下記一般式(II)のシラン化合物を含むことを特
徴とする上記(1)記載のエポキシ樹脂組成物、Embedded image (Where R 1 is hydrogen or an alkyl group having 1 to 6 carbon atoms or an alkoxy group having 1 to 2 carbon atoms;
6, an alkyl group or phenyl group, R 3 is a methyl group or an ethyl group, and n represents a number of 1 to 6. (2) The epoxy resin composition according to the above (1), comprising a silane compound represented by the following general formula (II):
【化6】(R1)2−Si−(OR2)2 ………(II) (ここで、R1は炭素数1〜10のアルキル基またはフ
ェニル基で、R2はメチル基またはエチル基を示す。) (3)下記一般式(III)のエポキシ樹脂を含むことを
特徴とする上記(1)または(2)記載のエポキシ樹脂
組成物、(R 1 ) 2 —Si— (OR 2 ) 2 (II) (where R 1 is an alkyl group or phenyl group having 1 to 10 carbon atoms, and R 2 is a methyl group or ethyl (3) The epoxy resin composition according to the above (1) or (2), further comprising an epoxy resin represented by the following general formula (III):
【化7】 (ここで、R1〜R4は水素または炭素数1〜10の炭化
水素を示し、互いに同一でも異なっていてもよい。nは
0〜3の正の数を示す。) (4)下記一般式(IV)の硬化剤を含むことを特徴とす
る上記(1)〜(3)いずれか記載のエポキシ樹脂組成
物、Embedded image (Here, R 1 to R 4 represent hydrogen or a hydrocarbon having 1 to 10 carbon atoms, and may be the same or different. N represents a positive number of 0 to 3.) (4) The following general formula: The epoxy resin composition according to any one of the above (1) to (3), comprising a curing agent of the formula (IV):
【化8】 (ここで、Rは水素または炭素数1〜10の炭化水素ま
たはハロゲンで、nは0〜8の正の数を示す。) (5)上記(1)〜(4)いずれか記載のエポキシ樹脂
組成物を含むことを特徴とする電子部品封止用エポキシ
樹脂成形材料、 (6)上記(5)記載の成形材料により素子を封止して
得られる電子部品、である。Embedded image (Where R is hydrogen, a hydrocarbon having 1 to 10 carbon atoms or halogen, and n represents a positive number of 0 to 8). (5) The epoxy resin according to any one of the above (1) to (4) An epoxy resin molding material for encapsulating an electronic component, comprising a composition, and (6) an electronic component obtained by encapsulating an element with the molding material according to (5).
【0009】[0009]
【発明の実施の形態】本発明において用いられる(A)
成分のエポキシ樹脂は特に限定はないが、たとえば、電
子部品封止用エポキシ樹脂成形材料で一般に使用されて
いるもので、フェノールノボラック型エポキシ樹脂、オ
ルソクレゾールノボラック型エポキシ樹脂、ビスフェノ
−ルAノボラック型エポキシ樹脂をはじめとするフェノ
ール類とアルデヒド類から合成されるノボラック樹脂を
エポキシ化したエポキシ樹脂、ビスフェノールA、ビス
フェノールF、ビスフェノールS、アルキル置換ビフェ
ノールなどのジグリシジルエーテル、ジアミノジフェニ
ルメタン、イソシアヌル酸などのポリアミンとエピクロ
ルヒドリンの反応により得られるグリシジルアミン型エ
ポキシ樹脂、ジシクロペンタジエンとフェノ−ル類の共
縮合樹脂のエポキシ化物、ナフタレン環を有するエポキ
シ樹脂、ナフトールアラルキル樹脂のエポキシ化物、ト
リメチロールプロパン型エポキシ樹脂、テルペン変性エ
ポキシ樹脂、オレフィン結合を過酢酸などの過酸で酸化
して得られる線状脂肪族エポキシ樹脂、及び脂環族エポ
キシ樹脂などが挙げられ、耐リフロー性の面からは下記
一般式(III)のエポキシ樹脂が好適である。DETAILED DESCRIPTION OF THE INVENTION (A) used in the present invention
The epoxy resin of the component is not particularly limited, and is, for example, one generally used in an epoxy resin molding material for encapsulating electronic parts, and is a phenol novolak type epoxy resin, an orthocresol novolak type epoxy resin, a bisphenol A novolak type. Epoxy resins obtained by epoxidizing novolak resins synthesized from phenols and aldehydes including epoxy resins, diglycidyl ethers such as bisphenol A, bisphenol F, bisphenol S, and alkyl-substituted biphenols; polyamines such as diaminodiphenylmethane and isocyanuric acid Glycidylamine type epoxy resin obtained by the reaction of phenol and epichlorohydrin, epoxidized co-condensation resin of dicyclopentadiene and phenols, epoxy resin having naphthalene ring, naphtho Epoxidized aralkyl resins, trimethylolpropane-type epoxy resins, terpene-modified epoxy resins, linear aliphatic epoxy resins obtained by oxidizing olefin bonds with a peracid such as peracetic acid, and alicyclic epoxy resins. From the viewpoint of reflow resistance, an epoxy resin represented by the following general formula (III) is preferable.
【化9】 (ここで、R1〜R4は水素または炭素数1〜10の炭化
水素を示し、互いに同一でも異なっていてもよい。nは
0〜3の正の数を示す。) これを例示すると、4,4’−ビス(2,3−エポキシ
プロポキシ)ビフェニルや4,4’−ビス(2,3−エ
ポキシプロポキシ)−3,3’,5,5’−テトラメチ
ルビフェニルを主成分とするエポキシ樹脂、エピクロル
ヒドリンと4,4’−ビス(2,3−エポキシプロポキ
シ)ビフェノールや4,4’−ビス(2,3−エポキシ
プロポキシ)−3,3’,5,5’−テトラメチルビフ
ェノールとを反応して得られるエポキシ樹脂等が挙げら
れる。中でも4,4’−ビス(2,3−エポキシプロポ
キシ)−3,3’,5,5’−テトラメチルビフェニル
を主成分とするエポキシ樹脂が好ましい。これらのエポ
キシ樹脂を単独又は2種類以上併用して使用することが
できる。Embedded image (Here, R 1 to R 4 represent hydrogen or a hydrocarbon having 1 to 10 carbon atoms and may be the same or different from each other. N represents a positive number of 0 to 3.) Epoxy containing 4,4'-bis (2,3-epoxypropoxy) biphenyl or 4,4'-bis (2,3-epoxypropoxy) -3,3 ', 5,5'-tetramethylbiphenyl as a main component Resin, epichlorohydrin and 4,4'-bis (2,3-epoxypropoxy) biphenol or 4,4'-bis (2,3-epoxypropoxy) -3,3 ', 5,5'-tetramethylbiphenol An epoxy resin obtained by the reaction is exemplified. Among them, an epoxy resin containing 4,4′-bis (2,3-epoxypropoxy) -3,3 ′, 5,5′-tetramethylbiphenyl as a main component is preferable. These epoxy resins can be used alone or in combination of two or more.
【0010】本発明において用いられる(B)成分の硬
化剤は特に限定はないが、たとえば、電子部品封止用エ
ポキシ樹脂成形材料で一般に使用されているもので、フ
ェノール、クレゾール、レゾルシン、カテコール、ビス
フェノールA、ビスフェノールF等のフェノール類又は
α−ナフトール、β−ナフトール、ジヒドロキシナフタ
レン等のナフトール類とホルムアルデヒド等のアルデヒ
ド類とを酸性触媒下で縮合又は共縮合させて得られる樹
脂、フェノール・アラルキル樹脂、ナフトール・アラル
キル樹脂等があり、特に耐リフロー性の面からは下記一
般式(IV)で表されるフェノール・アラルキル樹脂が好
適である。The curing agent of the component (B) used in the present invention is not particularly limited. For example, a curing agent generally used in an epoxy resin molding material for sealing electronic parts, such as phenol, cresol, resorcin, catechol, Resins obtained by condensing or co-condensing phenols such as bisphenol A and bisphenol F or naphthols such as α-naphthol, β-naphthol and dihydroxynaphthalene with aldehydes such as formaldehyde in the presence of an acidic catalyst, phenol aralkyl resins And a naphthol aralkyl resin, and particularly from the viewpoint of reflow resistance, a phenol aralkyl resin represented by the following general formula (IV) is preferable.
【化10】 (ここで、Rは水素または炭素数1〜10の炭化水素ま
たはハロゲンで、nは0〜8の正の数を示す。) 中でも下記の式(V)で示され、nが平均的に0〜8の
ものが好ましい。Embedded image (Here, R is hydrogen, a hydrocarbon having 1 to 10 carbon atoms or halogen, and n represents a positive number of 0 to 8.) Above all, it is represented by the following formula (V), and n is 0 on average. To 8 are preferred.
【化11】 これらの硬化剤は単独又は2種類以上併用して用いるこ
とができる。Embedded image These curing agents can be used alone or in combination of two or more.
【0011】また、(A)成分のエポキシ樹脂と(B)
成分の硬化剤の当量比、すなわち、エポキシ樹脂中のエ
ポキシ基数/硬化剤中の水酸基数の比は、特に限定はさ
れないが、それぞれの未反応分を少なく抑えるために
0.7〜1.3の範囲に設定することが好ましく、特に
成形性、耐リフロー性に優れる成形材料を得るためには
0.8〜1.2の範囲に設定することが好ましい。The epoxy resin (A) and the epoxy resin (B)
The equivalent ratio of the curing agent of the component, that is, the ratio of the number of epoxy groups in the epoxy resin / the number of hydroxyl groups in the curing agent is not particularly limited, but is 0.7 to 1.3 in order to reduce the amount of each unreacted component. In particular, in order to obtain a molding material having excellent moldability and reflow resistance, it is preferably set in the range of 0.8 to 1.2.
【0012】本発明に用いられる(C)成分のシランカ
ップリング剤は、下記一般式(I)で表されものであ
る。The silane coupling agent of the component (C) used in the present invention is represented by the following general formula (I).
【化12】 (ここで、R1は水素または炭素数1〜6のアルキル基
または炭素数1〜2のアルコキシ基、R2は炭素数1〜
6のアルキル基またはフェニル基、R3はメチル基また
はエチル基で、nは1〜6の数を示す。) これを例示すると、γ−アニリノプロピルメチルジメト
キシシラン、γ−アニリノプロピルメチルジエトキシシ
ラン、γ−アニリノメチルメチルジメトキシシラン、γ
−アニリノメチルメチルジエトキシシラン、N−(p−
メトキシフェニル)−γ−アミノプロピルメチルジメト
キシシラン、N−(p−メトキシフェニル)−γ−アミ
ノプロピルメチルジエトキシシラン等が挙げられ、中で
もリードフレームとの接着性、耐湿性及びパッケージの
成形性という観点からはγ−アニリノプロピルメチルジ
メトキシシランが好適に用いられる。Embedded image (Where R 1 is hydrogen or an alkyl group having 1 to 6 carbon atoms or an alkoxy group having 1 to 2 carbon atoms;
6, an alkyl group or phenyl group, R 3 is a methyl group or an ethyl group, and n represents a number of 1 to 6. For example, γ-anilinopropylmethyldimethoxysilane, γ-anilinopropylmethyldiethoxysilane, γ-anilinomethylmethyldimethoxysilane, γ
-Anilinomethylmethyldiethoxysilane, N- (p-
Methoxyphenyl) -γ-aminopropylmethyldimethoxysilane, N- (p-methoxyphenyl) -γ-aminopropylmethyldiethoxysilane, and the like. From the viewpoint, γ-anilinopropylmethyldimethoxysilane is preferably used.
【0013】(C)成分のシランカップリング剤の配合
量は、(D)成分の無機充填剤に対して0.2〜5.0
重量%であることが好ましく、さらに好ましくは0.5
〜2.5重量%である。0.2重量%未満ではフレ−ム
との接着性が低下しやすく、5.0重量%を超える場合
にはパッケージの成形性が低下しがちである。The compounding amount of the silane coupling agent of the component (C) is 0.2 to 5.0 with respect to the inorganic filler of the component (D).
% By weight, more preferably 0.5% by weight.
~ 2.5% by weight. If it is less than 0.2% by weight, the adhesion to the frame tends to decrease, and if it exceeds 5.0% by weight, the moldability of the package tends to decrease.
【0014】本発明のエポキシ樹脂組成物および電子部
品封止用エポキシ樹脂成形材料には、上記(C)成分の
シランカップリング剤以外に従来公知のカップリング剤
を併用してもよい。たとえば、ビニルトリクロロシラ
ン、ビニルトリエトキシシラン、ビニルトリス(β−メ
トキシエトキシ)シラン、γ−メタクリロキシプロピル
トリメトキシシラン、β−(3,4−エポキシシクロヘ
キシル)エチルトリメトキシシラン、γ−グリシドキシ
プロピルトリメトキシシラン、ビニルトリアセトキシシ
ラン、γ−メルカプトプロピルトリメトキシシラン、γ
−アミノプロピルトリエトキシシラン、γ−[ビス(β
−ヒドロキシエチル)]アミノプロピルトリエトキシシ
ラン、N−β−(アミノエチル)−γ−アミノプロピル
トリメトキシシラン、γ−(β−アミノエチル)アミノ
プロピルジメトキシメチルシラン、N−(トリメトキシ
シリルプロピル)エチレンジアミン、N−(ジメトキシ
メチルシリルイソプロピル)エチレンジアミン、メチル
トリメトキシシラン、メチルトリエトキシシラン、、N
−β−(N−ビニルベンジルアミノエチル)−γ−アミ
ノプロピルトリメトキシシラン、γ−クロロプロピルト
リメトキシシラン、ヘキサメチルジシラン、γ−アニリ
ノプロピルトリメトキシシラン、ビニルトリメトキシシ
ラン、γ−メルカプトプロピルメチルジメトキシシラン
等のシラン系カップリング剤、あるいはイソプロピルト
リイソステアロイルチタネート、イソプロピルトリス
(ジオクチルパイロホスフェート)チタネート、イソプ
ロピルトリ(N−アミノエチル−アミノエチル)チタネ
ート、テトラオクチルビス(ジトリデシルホスファイ
ト)チタネート、テトラ(2,2−ジアリルオキシメチ
ル−1−ブチル)ビス(ジトリデシル)ホスファイトチ
タネート、ビス(ジオクチルパイロホスフェート)オキ
シアセテートチタネート、ビス(ジオクチルパイロホス
フェート)エチレンチタネート、イソプロピルトリオク
タノイルチタネート、イソプロピルジメタクリルイソス
テアロイルチタネート、イソプロピルトリドデシルベン
ゼンスルホニルチタネート、イソプロピルイソステアロ
イルジアクリルチタネート、イソプロピルトリ(ジオク
チルホスフェート)チタネート、イソプロピルトリクミ
ルフェニルチタネート、テトライソプロピルビス(ジオ
クチルホスファイト)チタネート等のチタネート系カッ
プリング剤を1種以上併用することができる。In the epoxy resin composition of the present invention and the epoxy resin molding material for encapsulating electronic parts, a conventionally known coupling agent may be used in addition to the silane coupling agent of the component (C). For example, vinyltrichlorosilane, vinyltriethoxysilane, vinyltris (β-methoxyethoxy) silane, γ-methacryloxypropyltrimethoxysilane, β- (3,4-epoxycyclohexyl) ethyltrimethoxysilane, γ-glycidoxypropyl Trimethoxysilane, vinyltriacetoxysilane, γ-mercaptopropyltrimethoxysilane, γ
-Aminopropyltriethoxysilane, γ- [bis (β
-Hydroxyethyl)] aminopropyltriethoxysilane, N-β- (aminoethyl) -γ-aminopropyltrimethoxysilane, γ- (β-aminoethyl) aminopropyldimethoxymethylsilane, N- (trimethoxysilylpropyl) Ethylenediamine, N- (dimethoxymethylsilylisopropyl) ethylenediamine, methyltrimethoxysilane, methyltriethoxysilane, N
-Β- (N-vinylbenzylaminoethyl) -γ-aminopropyltrimethoxysilane, γ-chloropropyltrimethoxysilane, hexamethyldisilane, γ-anilinopropyltrimethoxysilane, vinyltrimethoxysilane, γ-mercaptopropyl Silane-based coupling agents such as methyldimethoxysilane, or isopropyl triisostearoyl titanate, isopropyl tris (dioctyl pyrophosphate) titanate, isopropyl tri (N-aminoethyl-aminoethyl) titanate, tetraoctyl bis (ditridecyl phosphite) titanate Tetra (2,2-diallyloxymethyl-1-butyl) bis (ditridecyl) phosphite titanate, bis (dioctylpyrophosphate) oxyacetate titanate, Bis (dioctyl pyrophosphate) ethylene titanate, isopropyl trioctanoyl titanate, isopropyl dimethacryl isostearyl titanate, isopropyl tridodecylbenzenesulfonyl titanate, isopropyl isostearyl diacryl titanate, isopropyl tri (dioctyl phosphate) titanate, isopropyl tricumyl phenyl titanate, One or more titanate coupling agents such as tetraisopropylbis (dioctylphosphite) titanate can be used in combination.
【0015】本発明における(D)成分の無機充填剤と
しては、特に限定はないが、溶融シリカ、結晶シリカ、
アルミナ、ジルコン、珪酸カルシウム、炭酸カルシウ
ム、炭化珪素、窒化アルミ、窒化ホウ素、ベリリア、ジ
ルコニア等の粉体、又はこれらを球形化したビーズ、チ
タン酸カリウム、炭化珪素、窒化珪素、アルミナ等の単
結晶繊維、ガラス繊維等を1種類以上配合して用いるこ
とができる。さらに、難燃効果のある無機充填剤として
は水酸化アルミニウム、水酸化マグネシウム、硼酸亜鉛
などが挙げられ、これらを単独または併用して用いるこ
ともできる。上記の無機充填剤の中で、線膨張係数低減
の観点からは溶融シリカが、高熱伝導性の観点からはア
ルミナが好ましい。充填剤形状は、成形時の流動性及び
金型摩耗性の点から球形もしくは球状に近い形が好まし
く、50重量%以上が球形であることが特に好ましい。The inorganic filler of the component (D) in the present invention is not particularly limited, but may be fused silica, crystalline silica,
Powders of alumina, zircon, calcium silicate, calcium carbonate, silicon carbide, aluminum nitride, boron nitride, beryllia, zirconia, etc., or spherical beads of these, single crystals of potassium titanate, silicon carbide, silicon nitride, alumina, etc. One or more kinds of fibers, glass fibers and the like can be used in combination. Further, examples of the inorganic filler having a flame-retardant effect include aluminum hydroxide, magnesium hydroxide, zinc borate and the like, and these can be used alone or in combination. Among the above-mentioned inorganic fillers, fused silica is preferred from the viewpoint of reducing the linear expansion coefficient, and alumina is preferred from the viewpoint of high thermal conductivity. The shape of the filler is preferably spherical or nearly spherical in view of fluidity during molding and mold abrasion, and particularly preferably 50% by weight or more is spherical.
【0016】無機充填剤(D)の配合量は、吸湿性、線
膨張係数の低減及び強度向上の観点から、成形材料全体
に対して70重量%以上が好ましく、85〜95重量%
であることが特に好ましい。85重量%未満では耐リフ
ロー性が低下しやすく、95重量%を超える場合には流
動性が不足しがちである。中でも88〜92重量%の範
囲がさらに好適である。The amount of the inorganic filler (D) is preferably 70% by weight or more, more preferably 85% to 95% by weight, based on the whole molding material, from the viewpoints of hygroscopicity, reduction of linear expansion coefficient and improvement of strength.
Is particularly preferred. If it is less than 85% by weight, the reflow resistance tends to decrease, and if it exceeds 95% by weight, the fluidity tends to be insufficient. Among them, the range of 88 to 92% by weight is more preferable.
【0017】本発明のエポキシ樹脂組成物および電子部
品封止用エポキシ樹脂成形材料には、上記(A)〜
(D)成分以外に下記一般式(II)のシラン化合物を使
用することができる。The epoxy resin composition and the epoxy resin molding material for encapsulating electronic parts of the present invention include the above (A) to
In addition to the component (D), a silane compound represented by the following general formula (II) can be used.
【化13】 (R1)2−Si−(OR2)2 ………(II) (ここで、R1は炭素数1〜10のアルキル基またはフ
ェニル基で、R2はメチル基またはエチル基を示す。)
上記一般式(II)のシラン化合物は、酸化膜剥離の抑制
や半田耐熱性の向上に効果的である。これを例示する
と、ジメチルジメトキシシラン、ジメチルジエトキシシ
ラン、ジフェニルジメトキシシラン、ジフェニルジエト
キシシラン、メチルフェニルジメトキシシラン、メチル
フェニルジエトキシシラン等が挙げられ、中でも特にジ
メチルジメトキシシランが好ましい。Embedded image (R 1 ) 2 —Si— (OR 2 ) 2 (II) (where R 1 is an alkyl group or phenyl group having 1 to 10 carbon atoms, and R 2 is a methyl group or ethyl Represents a group.)
The silane compound of the general formula (II) is effective for suppressing oxide film separation and improving solder heat resistance. Examples thereof include dimethyldimethoxysilane, dimethyldiethoxysilane, diphenyldimethoxysilane, diphenyldiethoxysilane, methylphenyldimethoxysilane, and methylphenyldiethoxysilane, among which dimethyldimethoxysilane is particularly preferred.
【0018】一般式(II)のシラン化合物の配合量は、
(C)成分との比((C)/(II))が0.5〜10と
なるよう設定されることが好ましく、さらに好ましくは
1〜5である。0.5未満ではフレ−ムとの接着性が低
下しやすく、10を超える場合には耐湿信頼性が低下し
がちである。The compounding amount of the silane compound of the general formula (II) is
The ratio ((C) / (II)) to the component (C) is preferably set to 0.5 to 10, more preferably 1 to 5. If it is less than 0.5, the adhesion to the frame tends to decrease, and if it exceeds 10, the moisture resistance reliability tends to decrease.
【0019】本発明のエポキシ樹脂組成物および電子部
品封止用エポキシ樹脂成形材料には、硬化促進剤も使用
することができる。例えば、1,8−ジアザ−ビシクロ
(5,4,0)ウンデセン−7、1,5−ジアザ−ビシ
クロ(4,3,0)ノネン、5、6−ヂブチルアミノ−
1,8−ジアザ−ビシクロ(5,4,0)ウンデセン−
7、ベンジルジメチルアミン、トリエタノールアミン、
ジメチルアミノエタノール、トリス(ジメチルアミノメ
チル)フェノール等の3級アミン類及びこれらの誘導
体、2−メチルイミダゾール、2−フェニルイミダゾー
ル、2−フェニル−4−メチルイミダゾール等のイミダ
ゾール類及びこれらの誘導体、トリブチルホスフィン、
メチルジフェニルホスフィン、トリフェニルホスフィ
ン、ジフェニルホスフィン、フェニルホスフィン等の有
機ホスフィン類及びこれらのホスフィン類に無水マレイ
ン酸、ベンゾキノン、ジアゾフェニルメタン等のπ結合
をもつ化合物を付加してなる分子内分極を有するリン化
合物、テトラフェニルホスホニウムテトラフェニルボレ
ート、トリフェニルホスフィンテトラフェニルボレー
ト、2−エチル−4−メチルイミダゾールテトラフェニ
ルボレート、N−メチルモリホリンテトラフェニルボレ
ート等のテトラフェニルボロン塩及びこれらの誘導体等
があげられる。これらは、単独でも2種以上併用して用
いても良い。A curing accelerator can also be used in the epoxy resin composition of the present invention and the epoxy resin molding material for sealing electronic parts. For example, 1,8-diaza-bicyclo (5,4,0) undecene-7,1,5-diaza-bicyclo (4,3,0) nonene, 5,6- {butylamino-
1,8-diaza-bicyclo (5,4,0) undecene-
7, benzyldimethylamine, triethanolamine,
Tertiary amines such as dimethylaminoethanol and tris (dimethylaminomethyl) phenol and derivatives thereof, imidazoles such as 2-methylimidazole, 2-phenylimidazole and 2-phenyl-4-methylimidazole and derivatives thereof, tributyl Phosphine,
Organic phosphines such as methyldiphenylphosphine, triphenylphosphine, diphenylphosphine, and phenylphosphine, and intramolecular polarization obtained by adding compounds having a π bond such as maleic anhydride, benzoquinone, and diazophenylmethane to these phosphines Examples include phosphorus compounds, tetraphenylboron salts such as tetraphenylphosphonium tetraphenylborate, triphenylphosphine tetraphenylborate, 2-ethyl-4-methylimidazole tetraphenylborate, N-methylmorpholine tetraphenylborate, and derivatives thereof. Can be These may be used alone or in combination of two or more.
【0020】さらに、その他の添加剤として、ブロム化
エポキシ樹脂や三酸化アンチモン、リン酸エステル、赤
リン及びメラミン樹脂をはじめとする含窒素化合物等の
難燃剤、天然ワックス、合成ワックス、酸化または非酸
化のポリオレフィン等の離型剤、カーボンブラック等の
着色剤、シリコーンオイルやシリコーンゴム粉末等の応
力緩和剤、ハイドロタルサイト、アンチモンービスマス
等のイオントラップ剤等を必要に応じて用いることがで
きる。Further, as other additives, flame retardants such as brominated epoxy resins, antimony trioxide, phosphate esters, red phosphorus and melamine resins, and other nitrogen-containing compounds, natural waxes, synthetic waxes, oxidized or non-oxidized Release agents such as oxidized polyolefins, coloring agents such as carbon black, stress relievers such as silicone oil and silicone rubber powder, and ion trapping agents such as hydrotalcite and antimony-bismuth can be used as necessary. .
【0021】本発明における成形材料は、各種原材料を
均一に分散混合できるのであれば、いかなる手法を用い
ても調製できるが、一般的な手法として、所定の配合量
の原材料をミキサー等によって十分混合した後、ミキシ
ングロール、押出機等によって溶融混練した後、冷却、
粉砕する方法を挙げることができる。成形条件に合うよ
うな寸法及び重量でタブレット化すると使いやすい。The molding material in the present invention can be prepared by any method as long as various raw materials can be uniformly dispersed and mixed. As a general method, a predetermined amount of raw materials are thoroughly mixed by a mixer or the like. After mixing, melt-kneading with a mixing roll, extruder, etc., cooling,
A pulverizing method can be used. It is easy to use if it is tableted with dimensions and weight that match the molding conditions.
【0022】リードフレーム、配線済みのテープキャリ
ア、配線板、ガラス、シリコンウエハなどの支持部材
に、半導体チップ、トランジスタ、ダイオード、サイリ
スタなどの能動素子、コンデンサ、抵抗体、コイルなど
の受動素子等の素子を搭載し、必要な部分を本発明の封
止用成形材料で封止して、電子部品を製造することがで
きる。このような電子部品としては、たとえば、銅リ−
ドフレ−ム上に搭載したチップを本発明の成形材料で封
止したQFPや、テープキャリアにバンプで接続した半
導体チップを本発明の成形材料で封止したTCPを挙げ
ることができる。また、配線板やガラス上に形成した配
線に、ワイヤーボンディング、フリップチップボンディ
ング、はんだなどで接続した半導体チップ、トランジス
タ、ダイオード、サイリスタなどの能動素子及び/又は
コンデンサ、抵抗体、コイルなどの受動素子を、本発明
の成形材料で封止したCOBモジュール、ハイブリッド
IC、マルチチップモジュールなどを挙げることができ
る。電子部品を封止する方法としては、低圧トランスフ
ァー成形法が最も一般的であるが、インジェクション成
形法、圧縮成形法等を用いてもよい。Supporting members such as lead frames, wired tape carriers, wiring boards, glass, silicon wafers, and the like, active elements such as semiconductor chips, transistors, diodes, and thyristors, and passive elements such as capacitors, resistors, and coils. An electronic component can be manufactured by mounting the element and sealing a necessary portion with the molding material for sealing of the present invention. Such electronic components include, for example, copper reeds.
Examples include QFP in which a chip mounted on a do frame is sealed with the molding material of the present invention, and TCP in which a semiconductor chip connected to a tape carrier by a bump is sealed with the molding material of the present invention. Also, active elements such as semiconductor chips, transistors, diodes, thyristors, and / or passive elements such as capacitors, resistors, and coils are connected to wiring formed on a wiring board or glass by wire bonding, flip chip bonding, soldering, or the like. , A COB module, a hybrid IC, a multi-chip module, and the like, which are sealed with the molding material of the present invention. As a method of sealing the electronic component, a low-pressure transfer molding method is the most common, but an injection molding method, a compression molding method, or the like may be used.
【0023】[0023]
【実施例】次に本発明の実施例を示すが、本発明の範囲
はこれらの実施例に限定されるものではない。EXAMPLES Next, examples of the present invention will be described, but the scope of the present invention is not limited to these examples.
【0024】実施例1、2、比較例1〜3 表1に示す配合組成で、各素材を予備混合(ドライブレ
ンド)した後、二軸ロール(ロール表面温度約80℃)
で10分間混練し、冷却粉砕して、実施例1、2及び比
較例1〜3の成形材料を製造した。エポキシ樹脂として
は、エポキシ当量196の4,4’−ビス(2,3−エ
ポキシプロポキシ)−3,3’,5,5’−テトラメチ
ルビフェニルを主成分とするエポキシ樹脂(1)と、エ
ポキシ当量393、臭素含有率49%のエピビス型の臭
素化エポキシ樹脂を使用し、フェノール樹脂としては、
水酸基当量171、軟化点69℃、数平均分子量900
の下記構造式(V)のフェノールアラルキル樹脂を使用
した。Examples 1 and 2, Comparative Examples 1 to 3 After premixing (dry blending) each material with the composition shown in Table 1, a biaxial roll (roll surface temperature of about 80 ° C.)
For 10 minutes, and cooled and pulverized to produce molding materials of Examples 1 and 2 and Comparative Examples 1 to 3. Examples of the epoxy resin include an epoxy resin (1) mainly composed of 4,4′-bis (2,3-epoxypropoxy) -3,3 ′, 5,5′-tetramethylbiphenyl having an epoxy equivalent of 196; An epibis-type brominated epoxy resin having an equivalent weight of 393 and a bromine content of 49% is used.
171 hydroxyl equivalents, 69 ° C softening point, 900 number average molecular weight
The phenol aralkyl resin of the following structural formula (V) was used.
【化14】 (ここで、nは0〜8の正の数を示す。)Embedded image (Here, n indicates a positive number from 0 to 8.)
【0025】[0025]
【表1】 表1 配合組成(単位:重量部) ━━━━━━━━━━━━━━━━━━━━━━━━━━━━━━━━━━━━ 素 材 実施例 比較例 1 2 1 2 3 ━━━━━━━━━━━━━━━━━━━━━━━━━━━━━━━━━━━━ エポキシ樹脂(1) 85 85 85 85 85 臭素化エポキシ樹脂 15 15 15 15 15 フェノール樹脂 85 85 85 85 85 トリフェニルホスフィン 2 2 2 2 2 N-フェニル-γ-アミノプロピル 10 10 − − − メチルジメトキシシラン γ-グリシドキシプロピル − − 10 10 10 トリメトキシシラン ジメチルジメトキシシラン − 5 − 5 − 可撓化剤 − − − − 20 (ポリジメチルシロキサン) カルナバワックス 1 1 1 1 1 ポリエチレンワックス 1 1 1 1 1 三酸化アンチモン 5 5 5 5 5 カーボンブラック 3.5 3.5 3.5 3.5 3.5 溶融シリカ(球状品) 1700 1700 1700 1700 17
00 ━━━━━━━━━━━━━━━━━━━━━━━━━━━━━━━━━━━━[Table 1] Table 1 Composition (unit: parts by weight) ━━━━━━━━━━━━━━━━━━━━━━━━━━━━━━━━━━━━ Material Example Comparative Example 1 2 1 2 3 ━━━━━━━━━━━━━━━━━━━━━━━━━━━━━━━━━━━━ Epoxy resin (1) 85 85 85 85 85 Brominated epoxy resin 15 15 15 15 15 Phenol resin 85 85 85 85 85 85 Triphenylphosphine 2 2 2 2 2 N-phenyl-γ-aminopropyl 10 10 − − − Methyldimethoxysilane γ-glycidoxypropyl -10 10 10 Trimethoxysilane Dimethyldimethoxysilane-5-5- Flexible agent-----20 (Polydimethylsiloxane) Carnauba wax 1 1 1 1 1 Polyethylene wax 1 1 1 1 1 Antimony trioxide 55 55 55 Carbon black 3.5 3.5 3.5 3.5 3.5 Fused silica (spherical) 1700 1700 1700 1700 17
00 ━━━━━━━━━━━━━━━━━━━━━━━━━━━━━━━━━━━━
【0026】作製した合計5種類の成形材料を、トラン
スファー成形機を用い、金型温度180℃、 成形圧力
70kgf/cm2、硬化時間90秒の条件で次の各試
験を行い評価した。 (1)スパイラルフロー(流動性の指標) EMMI−1−66に準じたスパイラルフロー測定用金
型を用いて成形し、流動距離を求めた。 (2)熱時硬度 金型開き直後の成形品硬度をショア−D型硬度計を用い
て測定した。 (3)耐湿性 SOP−28ピンの半導体装置を各成形材料を用いて成
形し、175℃、5時間後硬化することにより試験用パ
ッケージを作製した。このパッケージを85℃/85%
RH/72時間吸湿+215℃/90秒(VPS)の前
処理後、PCT(121℃/2気圧)に放置してチップ
上配線の断線の有無を観察し、断線不良率が50%に達
するまでの時間を調べた。 (4)半田耐熱性 QFP80ピンの樹脂封止型半導体装置(外形寸法20
mm×14mm×2mm、チップサイズ:8×10m
m、リードフレーム:EFTEC64T(ステージ加工
なし))を用いて、フレームにシリコンチップを銀ペー
ストにて接着(130℃/2hr硬化)した後さらに2
25℃に保持した熱板上に3分間放置してフレーム表面
に酸化膜を形成した。このフレームを実施例及び比較例
の成形材料を用いて、金型温度180℃、 成形圧力7
0kgf/cm2、硬化時間90秒の条件で成形し、1
75℃、5時間後硬化することにより試験用パッケージ
を作製した。このパッケージを恒温恒湿槽を用い、85
℃/85%RHの条件下、所定時間吸湿した後、240
℃/10秒の条件で処理した時のクラックの有無を観察
し、クラックが発生するまでの吸湿時間を調べた。 (5)酸化膜剥離 上記(4)で作成した試験用パッケージで、後硬化後、
超音波探査装置を用いてステージ裏面の剥離の有無を観
察し、剥離面積率(%)で評価した。評価結果を表2に
示す。Using the transfer molding machine, a total of five types of molding materials were evaluated by conducting the following tests under the conditions of a mold temperature of 180 ° C., a molding pressure of 70 kgf / cm 2 , and a curing time of 90 seconds. (1) Spiral flow (indicator of fluidity) Molding was performed using a mold for measuring spiral flow according to EMMI-1-66, and the flow distance was determined. (2) Hot hardness The hardness of the molded product immediately after opening the mold was measured using a Shore-D hardness meter. (3) Moisture Resistance A SOP-28 pin semiconductor device was molded using each molding material, and cured at 175 ° C. for 5 hours to produce a test package. 85 ° C / 85% for this package
After pretreatment of RH / 72 hours moisture absorption + 215 ° C./90 seconds (VPS), it is left in PCT (121 ° C./2 atm) to observe the presence or absence of disconnection of wiring on the chip, and until the disconnection failure rate reaches 50%. I checked the time. (4) Solder heat resistance QFP 80-pin resin-sealed semiconductor device (external dimensions 20
mm × 14mm × 2mm, chip size: 8 × 10m
m, using a lead frame: EFTEC64T (without stage processing)), bonding a silicon chip to the frame with a silver paste (130 ° C./2 hr curing),
An oxide film was formed on the surface of the frame by being left on a hot plate maintained at 25 ° C. for 3 minutes. This frame was formed using the molding materials of Examples and Comparative Examples, with a mold temperature of 180 ° C. and a molding pressure of 7.
Molded under the conditions of 0 kgf / cm 2 and curing time of 90 seconds.
A test package was prepared by curing at 75 ° C. for 5 hours. This package was placed in a thermo-hygrostat, 85
After absorbing moisture for a predetermined time under the conditions of
The presence or absence of cracks when treated under the conditions of ° C./10 seconds was observed, and the moisture absorption time until cracks were generated was examined. (5) Oxide film peeling The test package created in (4) above, after post-curing,
The presence or absence of peeling on the back surface of the stage was observed using an ultrasonic probe, and evaluated by the peeling area ratio (%). Table 2 shows the evaluation results.
【0027】[0027]
【表2】 表2 評価結果 ━━━━━━━━━━━━━━━━━━━━━━━━━━━━━━━━━━━━ 項 目 実施例 比較例 1 2 1 2 3 ━━━━━━━━━━━━━━━━━━━━━━━━━━━━━━━━━━━━ スパイラルフロー(inch) 35 40 30 35 30 熱時硬度 80 80 83 83 75 耐湿性(hr) 1350 1400 1250 1050 1450 半田耐熱性(hr) 120 168 24 48 48 酸化膜剥離(%) <10 0 >30 10〜30 <10 成形品外観 良好 良好 良好 良好 不良 ━━━━━━━━━━━━━━━━━━━━━━━━━━━━━━━━━━━━[Table 2] Table 2 Evaluation results 項 Item Example Comparative example 1 2 1 2 3 ━━━━━━━━━━━━━━━━━━━━━━━━━━━━━━━━━━━━ Spiral flow (inch) 35 40 30 35 30 Heat hardness 80 80 83 83 75 Moisture resistance (hr) 1350 1400 1250 1050 1450 Solder heat resistance (hr) 120 168 24 48 48 Oxide film peeling (%) <100> 30 10-30 <10 Molded product appearance good Good good good bad ━━━━━━━━━━━━━━━━━━━━━━━━━━━━━━━━━━━━
【0028】本発明における(C)成分のシランカップ
リング剤を含有しない比較例ではいずれも半田耐熱性が
劣っている。比較例1及び比較例2ではさらに酸化膜剥
離も大きく、耐湿性も劣っている。可撓化剤を添加した
比較例3では、剥離防止には効果がみられるものの熱時
硬度(成形性)が低く、外観も不良である。これに対し
て、(A)〜(D)成分を全て含む実施例1、2は、流
動性、熱時硬度、耐湿性、半田耐熱性、外観のいずれも
良好で、剥離防止効果もあった。特に一般式(II)に相
当するシラン化合物を添加した実施例2は酸化膜剥離が
まったくみられなかった。In each of the comparative examples containing no silane coupling agent (C) in the present invention, the solder heat resistance is inferior. In Comparative Examples 1 and 2, the oxide film peeling was further large and the moisture resistance was poor. In Comparative Example 3 in which a flexibilizing agent was added, although the effect of preventing peeling was observed, the hardness when heated (moldability) was low and the appearance was poor. On the other hand, Examples 1 and 2, which contain all of the components (A) to (D), had good fluidity, hardness at heat, moisture resistance, solder heat resistance, and appearance, and also had an effect of preventing peeling. . In particular, in Example 2 in which the silane compound corresponding to the general formula (II) was added, no oxide film peeling was observed at all.
【0029】[0029]
【発明の効果】本発明によって得られる電子部品封止用
エポキシ樹脂成形材料は、流動性、成形性等の信頼性に
優れているため、電子部品の高生産性に寄与し、また、
この成形材料を用いて、銅系リードフレームに搭載され
た半導体素子を封止して作製した半導体装置は、実施例
で示したように耐湿性、半田耐熱性に優れ、酸化膜剥離
が抑制されるため、その工業的価値は大である。The epoxy resin molding material for encapsulating electronic parts obtained by the present invention is excellent in reliability such as fluidity and moldability, so that it contributes to high productivity of electronic parts.
Using this molding material, a semiconductor device manufactured by sealing a semiconductor element mounted on a copper-based lead frame is excellent in moisture resistance and solder heat resistance as shown in the examples, and oxide film peeling is suppressed. Therefore, its industrial value is great.
Claims (6)
(C)シランカップリング剤、および(D)無機充填剤
を必須成分とし、(C)成分のシランカップリング剤が
下記一般式(I)で表されものであることを特徴とする
エポキシ樹脂組成物。 【化1】 (ここで、R1は水素または炭素数1〜6のアルキル基
または炭素数1〜2のアルコキシ基、R2は炭素数1〜
6のアルキル基またはフェニル基、R3はメチル基また
はエチル基で、nは1〜6の数を示す。)(1) an epoxy resin, (B) a curing agent,
An epoxy resin composition comprising (C) a silane coupling agent and (D) an inorganic filler as essential components, wherein the silane coupling agent as the component (C) is represented by the following general formula (I). Stuff. Embedded image (Where R 1 is hydrogen or an alkyl group having 1 to 6 carbon atoms or an alkoxy group having 1 to 2 carbon atoms;
6, an alkyl group or phenyl group, R 3 is a methyl group or an ethyl group, and n represents a number of 1 to 6. )
とを特徴とする請求項1記載のエポキシ樹脂組成物。 【化2】(R1)2−Si−(OR2)2 ………(II) (ここで、R1は炭素数1〜10のアルキル基またはフ
ェニル基で、R2はメチル基またはエチル基を示す。)2. The epoxy resin composition according to claim 1, comprising a silane compound represented by the following general formula (II). (R 1 ) 2 —Si— (OR 2 ) 2 (II) (where R 1 is an alkyl group having 1 to 10 carbon atoms or a phenyl group, and R 2 is a methyl group or ethyl Represents a group.)
ことを特徴とする請求項1または請求項2記載のエポキ
シ樹脂組成物。 【化3】 (ここで、R1〜R4は水素または炭素数1〜10の炭化
水素を示し、互いに同一でも異なっていてもよい。nは
0〜3の正の数を示す。)3. The epoxy resin composition according to claim 1, comprising an epoxy resin represented by the following general formula (III). Embedded image (Here, R 1 to R 4 represent hydrogen or a hydrocarbon having 1 to 10 carbon atoms and may be the same or different. N represents a positive number of 0 to 3.)
徴とする請求項1〜3各項記載のエポキシ樹脂組成物。 【化4】 (ここで、Rは水素または炭素数1〜10の炭化水素ま
たはハロゲンで、nは0〜8の正の数を示す。)4. The epoxy resin composition according to claim 1, further comprising a curing agent represented by the following general formula (IV). Embedded image (Here, R is hydrogen, a hydrocarbon having 1 to 10 carbon atoms or halogen, and n is a positive number of 0 to 8.)
物を含むことを特徴とする電子部品封止用エポキシ樹脂
成形材料。5. An epoxy resin molding material for sealing electronic parts, comprising the epoxy resin composition according to claim 1.
止して得られる電子部品。6. An electronic component obtained by sealing an element with the molding material according to claim 5.
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JP17383097A JP3890681B2 (en) | 1997-06-30 | 1997-06-30 | Epoxy resin molding material for electronic component sealing and electronic component |
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JP17383097A JP3890681B2 (en) | 1997-06-30 | 1997-06-30 | Epoxy resin molding material for electronic component sealing and electronic component |
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Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2002024808A1 (en) * | 2000-09-25 | 2002-03-28 | Hitachi Chemical Co., Ltd. | Epoxy resin molding material for sealing |
JP2003321533A (en) * | 2002-02-27 | 2003-11-14 | Hitachi Chem Co Ltd | Epoxy resin molding material for sealing and electronic part apparatus |
JP2003321532A (en) * | 2002-02-27 | 2003-11-14 | Hitachi Chem Co Ltd | Epoxy resin molding material for sealing and electronic part apparatus |
JP2003327667A (en) * | 2002-03-07 | 2003-11-19 | Hitachi Chem Co Ltd | Epoxy resin molding material for sealing and semiconductor device |
JP2007217708A (en) * | 2007-05-16 | 2007-08-30 | Hitachi Chem Co Ltd | Epoxy resin molding material for sealing and semiconductor device |
JP2014009233A (en) * | 2012-06-27 | 2014-01-20 | Hitachi Chemical Co Ltd | Encapsulation epoxy resin molding material and electronic part device |
JP2017101254A (en) * | 2017-02-28 | 2017-06-08 | 日立化成株式会社 | Encapsulation epoxy resin molding material and electronic part device |
-
1997
- 1997-06-30 JP JP17383097A patent/JP3890681B2/en not_active Expired - Fee Related
Cited By (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2002024808A1 (en) * | 2000-09-25 | 2002-03-28 | Hitachi Chemical Co., Ltd. | Epoxy resin molding material for sealing |
JPWO2002024808A1 (en) * | 2000-09-25 | 2004-01-29 | 日立化成工業株式会社 | Epoxy resin molding material for sealing and semiconductor device |
CN100462401C (en) * | 2000-09-25 | 2009-02-18 | 日立化成工业株式会社 | Epoxy resin molding material for sealing |
US7544727B2 (en) | 2000-09-25 | 2009-06-09 | Hitachi Chemical Co., Ltd. | Encapsulant of epoxy resin, curing agent, and secondary aminosilane coupling agent or phosphate |
JP2003321533A (en) * | 2002-02-27 | 2003-11-14 | Hitachi Chem Co Ltd | Epoxy resin molding material for sealing and electronic part apparatus |
JP2003321532A (en) * | 2002-02-27 | 2003-11-14 | Hitachi Chem Co Ltd | Epoxy resin molding material for sealing and electronic part apparatus |
JP2003327667A (en) * | 2002-03-07 | 2003-11-19 | Hitachi Chem Co Ltd | Epoxy resin molding material for sealing and semiconductor device |
JP2007217708A (en) * | 2007-05-16 | 2007-08-30 | Hitachi Chem Co Ltd | Epoxy resin molding material for sealing and semiconductor device |
JP2014009233A (en) * | 2012-06-27 | 2014-01-20 | Hitachi Chemical Co Ltd | Encapsulation epoxy resin molding material and electronic part device |
JP2017101254A (en) * | 2017-02-28 | 2017-06-08 | 日立化成株式会社 | Encapsulation epoxy resin molding material and electronic part device |
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