JPH1032348A - Device and manufacture of group iii nitride semiconductor light emitting element - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a structure of single or multiple quantum wells having excellent crystalline property for a light emitting layer. SOLUTION: A grown substrate is moved between a first heating stage 20a heated to the first temperature and a second heating stage 20b heated to the second temperature, which are provided in the same reaction chamber. When the barrier layer of a light emitting layer is formed, the grown substrate is moved to the first heating stage 20a, and the barrier layer is grown. When the well layer of the light emitting layer is formed, the grown substrate is moved to the second heating stage 20b, and the well layer is grown. Thus, the requirements for the temperature rising time until the migration to the relative high temperature and the temperature decreasing time unit the migration to the relatively low temperature are avoided. Therefore, the time, in which the well layer grown at the relatively low temperature is exposed to the growing temperature of the barrier layer that must be grown at the relatively high temperature, becomes short. Thus, the crystal property of the well layer is improved. In this way, the quantum-well structure, in which the band structure steeply changes and the quality is excellent, is obtained.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method and an apparatus for manufacturing a light emitting device having a light emitting layer having a single or multiple quantum well structure. In particular, the present invention relates to a manufacturing method and an apparatus for improving the luminous efficiency by improving the crystallinity of a light emitting element.

[0002]

2. Description of the Related Art Conventionally, there has been known a semiconductor light emitting diode using InGaN that can emit blue light. Various improvements have been made by the present inventors to improve the brightness of the blue light emitting diode. One of them has been studied to make the light emitting layer an InGaN / GaN quantum well structure.

[0003]

However, in the case of manufacturing a quantum well structure having the above structure, only the type of flowing gas is instantaneously switched to grow InGaN of the well layer and GaN of the barrier layer. Is going. The required growth temperature is higher for GaN in the barrier layer than for InGaN in the well layer. If the growth temperature is changed, the barrier layer
It is necessary to grow the temperature of the GaN with the susceptor to the temperature at which the GaN is grown, grow the GaN at that temperature, and then cool the temperature to the temperature at which the InGaN is grown to grow the InGaN well layer.
At this time, it takes a long time to raise the temperature from the growth temperature of InGaN and to return to the original temperature (usually 90 seconds or more).
Since the already grown InGaN layer is lengthened to a temperature higher than its growth temperature, diffusion of In and the like occur, so that single crystal InGaN cannot be obtained and a good quantum well structure cannot be obtained.

For such a reason, the growth temperature of GaN is increased without changing the growth temperature between the well layer and the barrier layer.
In order to avoid adversely affecting the GaN well layer, low-temperature InGaN
The growth temperature. For this reason, the crystallinity of GaN in the barrier layer is poor, and a steeply changing single or multiple quantum well structure has not been obtained. As a result, there is a problem that the light emitting efficiency is low and the light emitting luminance of the obtained light emitting element is low.

The present invention has been made to solve the above problems, and an object of the present invention is to make a light emitting layer a single or multiple quantum well structure having good crystallinity. The purpose is to improve the luminous efficiency of the light emitting element.

[0006]

According to the first aspect of the present invention, a first heating table heated to a first temperature and a second heating table heated to a second temperature are provided in the same reaction chamber. When the growth substrate is moved to form the barrier layer of the light emitting layer, the growth substrate is moved to the first heating stage to grow the barrier layer, and when the well layer of the light emitting layer is formed, the growth substrate is moved to the second heating stage.
The well layer is grown by moving it to a heating table. Therefore, it is not necessary to raise the temperature before moving to a relatively high temperature and to decrease the temperature until moving to a relatively low temperature. The time required for exposure to the growth temperature of the barrier layer, which needs to be grown at a high temperature, is short, and the crystallinity of the well layer is improved. Further, since the growth temperature of the barrier layer can be set to a temperature necessary for obtaining an original good crystal, the crystallinity of the barrier layer is also increased. Therefore, a high-quality quantum well structure in which the band structure changes sharply can be obtained.

According to the second aspect of the present invention, since the gas flow to the first heating table and the gas flow to the second heating table can be controlled independently, each gas flow is formed. By moving the growth substrate between the first heating table and the second heating table, the barrier layer and the well layer can be grown immediately. Therefore, after the formation of the well layer, in the first heating table,
Since the barrier layer can be formed immediately at the growth temperature of the barrier layer, the barrier layer film is formed at the moment when the surface of the well layer is exposed to a high temperature. It also protects you from high temperatures.

According to the third aspect of the present invention, the barrier layer
(In _x1 Ga _1-x1 ) _y1 Al _1-y1 N (0 ≦ x1 ≦ 1,0 ≦ y1 ≦ 1), and the well layer is (In _x2 Ga _1-x2 ) _y2 Al _1-y2 N (0 ≦ x2 ≦ 1,0 ≤ y2 ≤ 1),
When the growth temperature of the barrier layer is higher than the growth temperature of the well layer, blue and green light-emitting elements with high luminous efficiency can be obtained.

According to the invention of claim 4, the barrier layer is
Al _x3 Ga _1-x3 N (0 ≦ x3 ≦ 1), the well layer is In _x4 Ga _1-x4 N (0 ≦ x4
≦ 1), the barrier layer is made of Ga
By setting N (the well layer is In _x4 Ga _1-x4 N (0 ≦ x4 ≦ 1), similarly, blue and green light-emitting elements with high luminous efficiency can be obtained.

According to the present invention, a first heating stage capable of heating to a first temperature and a second heating stage capable of heating to a second temperature are provided in the same reaction chamber. Since the moving means that can move between the second heating table and the second heating table is provided, the temperature can be rapidly changed as described above, and the barrier layer can be immediately formed on the well layer. Therefore, the time during which the well layer is exposed to a high temperature is shortened, and a high quality quantum well structure can be obtained.

According to the invention of claim 8, since the gas flow to the first heating table and the gas flow to the second heating table can be controlled independently, for the same reason as the method invention of claim 2, A high quality quantum well structure can be obtained.

[0012]

DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, the present invention will be described based on specific embodiments. The present invention is not limited to the following examples. FIG. 1 shows an overall view of the light emitting device 100 according to the embodiment of the present invention. The light emitting device 100 has a sapphire substrate 1, and a 0.05 μm AlN buffer layer 2 is formed on the sapphire substrate 1.

On the buffer layer 2, a film thickness of about
4.0 μm, silicon (Si) doped with 2 × 10 ¹⁸ / cm ³ electron concentration
High carrier concentration n ⁺ layer 3 made of GaN, thickness about 0.5 μm
N layer 4 of GaN doped with silicon (Si) having an electron concentration of 5 × 10 ¹⁷ / cm ^3, a light emitting layer 5 of an InGaN / GaN multiple quantum well structure with a total thickness of about 65 nm, a thickness of about 10 nm, and a hole Concentration 2
A p-type cladding layer 7 made of Al _0.08 Ga _0.92 N doped with × 10 ¹⁷ / cm ³ and magnesium (Mg) at a concentration of 5 × 10 ¹⁹ / cm ³
1. A first layer made of GaN doped with magnesium (Mg) having a film thickness of about 35 nm and a hole concentration of 3 × 10 ¹⁷ / cm ^{3 and} a concentration of 5 × 10 ¹⁹ / cm ³
Contact layer 72, thickness about 5 nm, hole concentration 6 × 10 ¹⁷
/ cm ³ magnesium (Mg) concentration 1 × 10 ²⁰ / cm ³ doped Ga
A p ⁺ second contact layer 73 of N 2 is formed. Then, Ni / Au is formed on the entire upper surface of the second contact layer 73.
And a transparent electrode 9 composed of a double layer of
A pad 90 for bonding is formed of a double layer of Ni / Au. Also, on the n ⁺ layer 3
An electrode 8 made of Al is formed.

As shown in FIG. 2, the light emitting layer 5 has a seven-period overall thickness composed of a barrier layer 511 made of GaN and having a thickness of 5 nm and a well layer 512 made of In _0.68 Ga _0.32 N and having a thickness of 5 nm. It has a multiple quantum well structure of 65 nm.

The device having the above structure was manufactured in a vapor phase growth apparatus having the structure shown in FIG. Next, the structure of the vapor phase growth apparatus will be described with reference to FIGS. In FIG. 3, the quartz tube 10 is sealed at its left end with an O-ring 15 and abuts against the flange 14. The buffer tube 38 and the fixing tool 39 are used, and bolts 46 and 47, nuts 48 and 49, etc. 14. The right end of the quartz tube 10 is sealed with an O-ring 40 and fixed to the flange 27 with screw fasteners 41 and 42.

A liner tube 12, which is an introduction tube for introducing a reaction gas, is provided in an inner chamber 11 surrounded by the quartz tube 10. At the gas inlet of the liner tube 12, it is branched into two liner tubes 12a and 12b as shown in FIG. One end 13 of the liner pipe 12 on the gas inlet side is held by a holding plate 17 fixed to a flange 14,
The bottom portion 18 of the other end 16 is held on the quartz tube 10 by holding legs 19. The liner tube 12 is inclined in the -Z direction.

As shown in FIG. 4, the liner tube 12 is branched into two liner tubes 12a and 12b on the side near the gas inlet when viewed from above. The major axis of the quartz tube 10 (X
The cross section of the liner tube 12 perpendicular to the axis (axis) differs depending on the position in the X-axis direction, as shown in FIGS. 5 to 8, and its planar shape is enlarged as it proceeds downstream as shown in FIG. ing. That is, the reaction gas flows in the X-axis direction, but the cross section of the liner tube 12 is circular on the upstream side of the gas flow as shown in FIG. Is the long axis, the shape becomes an elliptical shape that is enlarged in the long axis direction and reduced in the short axis direction, and the first heating table 20a and the second heating table 20b are placed on the slightly upstream position A in FIG.
As shown in the figure, the shape is a flat elliptical shape that is thin in the vertical direction (Z axis) and long in the Y axis direction. The position A constitutes a throttle portion of the liner tube 12. The reaction gas blown out from the converging portion enters the sapphire substrate 1 in a range of 2 to 45 degrees. In particular, the angle of incidence of the reaction gas on the sapphire substrate 1 is determined in consideration of the growth rate and the uniform flow.
A range of 10 to 10 degrees is preferred.

Downstream of the liner tube 12, a sample mounting chamber 21 having a rectangular cross section perpendicular to the X-axis for mounting the first heating table 20a and the second heating table 20b is integrally connected. I have. A first heating table 20a and a second heating table 20b are stored in the sample mounting chamber 21. The first heating table 20a and the second heating table 20b have a rectangular cross section perpendicular to the X axis, and the upper surface 23 is horizontal. A slide table 50 on which the sapphire substrate 1 is placed is arranged on the first heating table 20a and the second heating table 20b. This slide table 50
Is connected to a connecting rod 51, which is slidably supported by a seal type bearing 83, and
Projecting outside. By sliding the connecting rod 51, the slide table 50 is connected to the first heating table 20a and the second heating table 20a.
It can be mutually moved between the heating table 20b.

A first liner is provided upstream of the liner tube 12a.
The gas pipe 28a and the second gas pipe 29b are open. The first gas pipe 28a is inside the second gas pipe 29a, and the two pipes 28a, 29a have a coaxial double pipe structure. A large number of holes 30a are formed in the periphery of a portion of the first gas pipe 28a protruding from the second gas pipe 29a, and a large number of holes 30a are also formed in the second gas pipe 29a. Then, the reaction gas introduced through the first gas pipe 28a is blown into the liner pipe 12a, where it is mixed for the first time with the gas introduced through the second gas pipe 29a.
Similarly for the liner tube 12b, the first gas tube 28
b, a second gas pipe 29b, and a hole 30b.

The first gas pipe 28a is connected to a first manifold 31a, and the second gas pipe 29a is connected to a second manifold 32a. The first manifold 31a has a supply system I for carrier gas (H ₂ , N ₂ ), a supply system J for trimethylgallium (Ga (CH ₃ ) ₃ ) (hereinafter referred to as “TMG”), and a trimethylaluminum ( Al (CH ₃ ) ₃ ) (hereinafter referred to as “TMA”) supply system K, silane (SiH ₄ ) supply system L, and cyclopentadienyl magnesium (Mg (C ₅
H ₅ ) ₂ ) (hereinafter referred to as “CP ₂ Mg”) is connected to a supply system M. The NH ₃ supply system H and the carrier gas supply system I are connected to the second manifold 32.

Similarly, the first gas pipe 28b and the second gas pipe 2
9b is also connected to a first manifold and a second manifold (not shown). The first manifold has a carrier gas (H ₂ , N ₂ ) supply system I and trimethylgallium (Ga (CH ₃ ) ₃ ). ) (Hereinafter referred to as “TMG”)
And trimethylgallium trimethylindium (In (CH ₃ )
₃ ) (hereinafter referred to as “TMI”). The NH ₃ supply system H and the carrier gas supply system I are connected to the second manifold.

A cooling pipe 33 for circulating cooling water is formed on the outer periphery of the quartz tube 10, and a high-frequency coil 34 for applying a high-frequency electric field is provided on the outer periphery. The high-frequency coil 34 is connected to the first heating table 20a and the second heating table 20a.
The heating temperature of the heating table 20b can be changed independently. The liner tube 12a is connected to an external tube 35a via a flange 14, and a carrier gas is introduced from the external tube 35a. The same applies to the liner tube 12b. In the sample mounting chamber 21, an introduction pipe 36 extends from the outside through the flange 14 from the side, and a thermocouple 43 for measuring the temperature of the sample and its conductors 44 and 45 are provided in the introduction pipe 36. Is provided so that the sample temperature can be measured from the outside.

With such an apparatus configuration, the first gas pipe 2
8a, TMG, TMA if necessary, silane or a mixed gas of CP ₂ Mg and H ₂ if necessary, and the second gas pipe 2
The mixed gas of NH ₃ and H ₂ introduced in 9a is mixed near the outlet of those tubes, and the mixed reaction gas is
a, is led to the first heating table 20a of the sample mounting chamber 21,
It passes through a gap formed between the sapphire substrate 1 and the upper tube wall 24 of the liner tube 12a. At this time, the flow of the reaction gas on the sapphire substrate 1 is made uniform in the Y direction by the action of the throttle portion at the position A, and is also made uniform in the X direction by the action of the guide portion by the upper tube wall 24 covering the sapphire substrate 1. A laminar flow is obtained. As a result, a high-quality crystal with little place dependence on the substrate grows. With these systems, GaN or Al _x Ga ₁ -xN can be obtained, and a semiconductor layer to which Si or Mg is added as necessary can be obtained.

Similarly, when it is guided by the first gas pipe 28b, TM
A mixed gas of G, TMI, and H ₂ and a mixed gas of NH ₃ and H ₂ guided by the second gas pipe 29b are mixed near the outlets of those pipes, and the mixed reaction gas is mixed by the liner pipe 12b. The sapphire substrate 1 is guided to the second heating table 20b of the sample mounting chamber 21 and passes through a gap formed between the sapphire substrate 1 and the upper tube wall 24 of the liner tube 12b. At this time, the flow of the reaction gas on the sapphire substrate 1 is made uniform in the Y direction by the action of the throttle portion at the position A, and is also made uniform in the X direction by the action of the guide portion by the upper tube wall 24 covering the sapphire substrate 1. A laminar flow is obtained. As a result, a high-quality crystal with little place dependence on the substrate grows. With these strains, In _x Ga
_1-x N can be obtained.

Next, a method of manufacturing a semiconductor device using the above-described manufacturing apparatus will be described. First, the single crystal sapphire substrate 1 is placed on the slide table 50 in the reaction chamber 21 of the M0VPE apparatus with the a-plane cleaned by organic cleaning and heat treatment as the main surface, and the position of the slide table 50 is changed to the sapphire substrate 1. Was adjusted by moving the connecting rod 51 so that the... Came above the first heating table 20a. Next, necessary gas was flowed from the liner tube 12a. Temperature 1100 ° C. while flowing with H ₂ to about 30 minutes the reaction chamber at a flow rate of 2 liter / min at atmospheric pressure
The sapphire substrate 1 was baked.

Next, by lowering the temperature to 400 ° C., and H ₂
20 liter / min, NH ₃ 10 liter / min, TMA 1.8 × 10 ^-5
The AlN buffer layer 2 was supplied at about 0.1 mol / min for about 90 seconds.
It was formed to a thickness of 05 μm. Next, the temperature of the sapphire substrate 1 was maintained at 1150 ° C., H ₂ was 20 liter / min, and NH ₃ was 10 lite.
r / min, TMG 1.7 × 10 ^-4 mol / min, 0.86p by H ₂ gas
Silane diluted at 20 × 10 ⁻⁸ mol / min was introduced for 40 minutes at a film thickness of about 4.0 μm, an electron concentration of 1 × 10 ¹⁸ / cm ³ , and a silicon concentration of 4 × 10 ¹⁸ / cm ³ (Si). 3.) A high carrier concentration n ⁺ layer 3 made of doped GaN was formed.

After the high carrier concentration n ⁺ layer 3 is formed, the temperature is maintained at 1100 ° C. and H ₂ is reduced to 20 liter / hour.
Min, NH ₃ at 10 liter / min, TMG at 1.7 × 10 ^-4 mol / min,
Silane diluted to 0.86 ppm with H ₂ gas was introduced at 10 × 10 ⁻⁹ mol / min for 5 minutes, the film thickness was about 0.5 μm, and the electron concentration was 5 × 10
^An n-layer 4 of GaN doped with silicon (Si) having a density of ¹⁷ / cm ³ and a silicon concentration of 1 × 10 ¹⁸ / cm ³ was formed.

Thereafter, the temperature of the first heating table 20a is set to 890 ° C.
Then, the temperature of the second heating table 20b was adjusted to 700 ° C. From the liner tube 20a, N ₂ or H ₂ is supplied at 10 liter / min and NH ₃ is supplied.
20 liter / min, TMG is supplied at 3.7 × 10 ^-6 mol / min, and N ₂ or H ₂ is supplied at 10 liter / min and NH ₃ is supplied from the liner tube 20b.
20 liter / min, TMG 3.7 × 10 ^-6 mol / min, TMI 8.8
It was supplied at a rate of × 10 ^-6 mol / min.

Then, the substrate 1 is placed on the first heating table 20a.
Is held for 1.5 minutes to form a barrier layer 511 made of GaN having a thickness of about 35 Å. Next, immediately after the growth of the barrier layer 511 was completed, the connecting rod 51 was operated to move the slide table 51 onto the second heating table 20b. After that, the substrate 1 is placed on the second heating table 20b,
By holding for 1.5 minutes, In _0.68 Ga _0.32 N
Was formed. By repeating such a procedure, as shown in FIG. 2, the barrier layers 511 and the well layers 512 are alternately stacked by only 7 layers and 6 layers, and the entire thickness is increased.
The light emitting layer 5 having a multiple quantum well structure of 45 nm was formed.

[0030] Then, by stopping the supply of gas from the liner tube 20b, holding the substrate 1 in a state of being positioned on the first heating stage 20a, the temperature of the first heating stage 20a to 1100 ° C., N ₂ Or H ₂ at 20 liter / min, NH ₃ at 10 liter / min, TM
G is 0.5 × 10 ⁻⁴ mol / min, TMA is 0.47 × 10 ⁻⁵ mol / min,
Then, CP ₂ Mg was introduced at 2 × 10 ⁻⁷ mol / min for 2 minutes to form a cladding layer 71 of magnesium (Mg) -doped Al _0.08 Ga _0.92 N having a thickness of about 10 nm. The magnesium concentration of the cladding layer 71 is 5 × 10 ¹⁹ / cm ³ . In this state,
The cladding layer 71 is still an insulator having a resistivity of 10 ⁸ Ωcm or more.

Next, the temperature was maintained at 1100 ° C. and N ₂ or H ₂ was added.
20 liter / min, NH ₃ 10 liter / min, TMG 0.5 × 10 ^-4
Mole / min and CP ₂ Mg were introduced at 2 × 10 ⁻⁸ mol / min for 4 minutes to form a first contact layer 72 made of magnesium (Mg) -doped GaN having a thickness of about 35 nm. The magnesium concentration of the first contact layer 72 is 5 × 10 ¹⁹ / cm ³ . In this state, the first contact layer 72 still has a resistivity of 10
It is an insulator of ⁸ Ωcm or more.

Next, the temperature was maintained at 1100 ° C. and N ₂ or H ₂ was added.
20 liter / min, NH ₃ 10 liter / min, TMG 0.5 × 10 ^-4
Mol / min and CP ₂ Mg were introduced at 4 × 10 ^-8 mol / min for 1 minute to form a p ⁺ second contact layer 73 of magnesium (Mg) doped GaN having a thickness of about 5 nm. . The magnesium concentration of the second contact layer 73 is 1 × 10 ²⁰ / cm ³ . In this state, the second contact layer 73 is still an insulator having a resistivity of 10 ⁸ Ωcm or more.

Next, the second contact layer 73, the first contact layer 72, and the cladding layer 7 are formed using an electron beam irradiation device.
1 was uniformly irradiated with an electron beam. Electron beam irradiation conditions are: acceleration voltage about 10KV, data current 1μA, beam moving speed 0.2m
m / sec, beam diameter 60 μmφ, vacuum degree 5.0 × 10 ⁻⁵ Torr. By the irradiation of the electron beam, the second contact layer 73,
The first contact layer 72 and the cladding layer 71 have a hole concentration of 6 × 10 ¹⁷ / cm ³ , 3 × 10 ¹⁷ / cm ³ , 2 × 10 ¹⁷ / c, respectively.
It became a p-conduction type semiconductor having m ³ and resistivity of 2Ωcm, 1Ωcm, 0.7Ωcm. Thus, a wafer having a multilayer structure was obtained.

Next, a metal mask layer 11 was formed on the second contact layer 73, and a photoresist 12 was applied thereon. Then, by photolithography, on the second contact layer 73, the photoresist 12 at the electrode formation site for the high carrier concentration n ⁺ layer 3 was removed. Next, the metal mask layer 11 not covered with the photoresist 12 was removed with an acidic etching solution.

Next, the second contact layer 73, the first contact layer 72, the cladding layer 71, the light-emitting layer 5, and the n-layer 4, which are not covered by the metal mask layer 11, are subjected to a vacuum of 0.
After dry-etching by supplying 04 Torr, high-frequency power of 0.44 W / cm ² and BCl ₃ gas at a rate of 10 ml / min, dry etching was performed with Ar. In this step, a hole A for extracting an electrode from the high carrier concentration n ⁺ layer 3 was formed. After that, the metal mask layer 11 was removed.

Next, two layers of Ni / Au were uniformly deposited, and the transparent electrode 9 was formed on the second contact layer 73 through the application of a photoresist, a photolithography step, and an etching step. Then, Ni / Au is applied to a part of the transparent electrode 9.
The pad 90 was formed by vapor-depositing two layers. On the other hand, the electrode 8 was formed on the n ⁺ layer 3 by evaporating aluminum. Thereafter, the wafer processed as described above was cut into individual devices to obtain light emitting diodes having the structure shown in FIG.

The light emitting device thus obtained had a driving current of 20 mA, a driving voltage of 3.0 V, a peak wavelength of 500 nm, and an emission intensity of 2000 mCd.

In the above embodiment, the light emitting layer 5 has a quantum well structure having seven barrier layers and six well layers, but the number of layers is arbitrary. Further, a single quantum well structure or a multiple quantum well structure may be used. In the above embodiment, the barrier layer
GaN, is used an InGaN well layer, the barrier layer wide high and forbidden bandwidth growth temperature than that of the well layer, (an In _x1 Ga
_1-x1 ) _y1 Al _1-y1 N (0 ≦ x1 ≦ 1,0 ≦ y1 ≦ 1), the well layer has a lower growth temperature and a narrower forbidden bandwidth than the barrier layer,
(In _x2 Ga _1-x2 ) _y2 Al _1-y2 N (0 ≦ x2 ≦ 1,0 ≦ y2 ≦ 1). Further, the barrier layer is formed of Al _x3 Ga _1-x3 N (0 ≦ x3 ≦
1), the well layer may be In _x4 Ga _1-x4 N (0 ≦ x4 ≦ 1).
The thicknesses of the barrier layer and the well layer are not particularly limited as long as the quantum well effect occurs.

Although a double hetero junction structure is used in all of the above embodiments, a single hetero junction structure may be used. Further, although the heat treatment is used to form the p-layer, the p-type may be formed by electron beam irradiation. Although an example of a light emitting diode has been described, a laser diode may be similarly configured. In all the above embodiments, the liner tube 2
The substrate 1 is placed on the first heating table 20a and the second heating table 20b with the gas flowing simultaneously from the first heating table 20a and the liner tube 20b.
Is switched to immediately grow a crystal layer of each component. After the movement, for example, after waiting for 20 to 30 seconds, the temperature of the substrate 1 becomes completely equal to the temperature of each of the heating tables 20a and 20b. From each corresponding liner tube 20
The source gas may be supplied from a and 20b.

[Brief description of the drawings]

FIG. 1 is a cross-sectional view illustrating a structure of a light emitting device manufactured by the method and apparatus of the present invention.

FIG. 2 is a cross-sectional view illustrating a detailed configuration of a light-emitting layer of the light-emitting element.

FIG. 3 is a configuration diagram showing a manufacturing apparatus according to the embodiment.

FIG. 4 is a plan view of the manufacturing apparatus of the embodiment.

FIG. 5 is a sectional view of a liner tube used in the manufacturing apparatus of the embodiment.

FIG. 6 is a sectional view of a liner tube used in the manufacturing apparatus of the embodiment.

FIG. 7 is a sectional view of a liner tube used in the manufacturing apparatus of the embodiment.

FIG. 8 is a sectional view of a liner tube used in the manufacturing apparatus of the embodiment.

[Explanation of symbols]

REFERENCE SIGNS LIST 100 light emitting diode 1 sapphire substrate 2 buffer layer 3 high carrier concentration n ⁺ layer 4 n layer 5 light emitting layer 511 barrier layer 512 well layer 71 clad layer 72 first contact layer 73 second Contact layer 9: Transparent electrode 90, 8: Electrode pad

Continuing on the front page (72) Norikatsu Koide, No. 1, Nagahata, Ochiai, Kasuga-cho, Nishi-Kasugai-gun, Aichi Prefecture Inside (72) Inventor Masayoshi Koike, No. 1, Nagahata, Ochiai, Kasuga-cho, Nishikasugai-gun, Aichi, Japan Toyota Synthetic Co., Ltd. (72) Inventor Isamu Akasaki 1-38-805, Joshin, Nishi-ku, Nagoya, Aichi Prefecture

Claims (7)

[Claims] 1. A method for manufacturing a light emitting device using a single or multiple quantum well structure of a group III nitride semiconductor for a light emitting layer, comprising: a first heating table heated to a first temperature and a second heating table heated to a second temperature. A second heating stage formed in the same reaction chamber;
When forming a barrier layer of the light emitting layer by using a growth apparatus capable of moving the growth substrate between a heating table and the second heating table, the growth substrate is moved to the first heating table. A step of growing the barrier layer and forming a well layer of the light emitting layer by moving the growth substrate to the second heating table to grow the well layer; Device manufacturing method. 2. The method according to claim 1, wherein a reaction gas flowing to the first heating stage and the second heating stage is independently controlled. 3. The barrier layer is composed of (In _x1 Ga _1-x1 ) _y1 Al _1-y1 N
(0 ≦ x1 ≦ 1,0 ≦ y1 ≦ 1), the well layer is (In _x2 Ga _1-x2 ) _y2 A
3. The group III according to claim 1, wherein l _1-y2 N (0 ≦ x2 ≦ 1,0 ≦ y2 ≦ 1), and the growth temperature of the barrier layer is higher than the growth temperature of the well layer. A method for manufacturing a nitride semiconductor light emitting device. 4. The barrier layer is made of Al _x3 Ga _1-x3 N (0 ≦ x3 ≦
1) The method of manufacturing a group III nitride semiconductor light emitting device according to claim 1, wherein the well layer is made of In _x4 Ga _1-x4 N (0 ≦ x4 ≦ 1). 5. The barrier layer is made of GaN, and the well layer is made of In _x4.
2. The method according to claim 1, wherein Ga _1-x4 N (0 ≦ x4 ≦ 1). 6. An apparatus for manufacturing a light emitting device using a single or multiple quantum well structure of a group III nitride semiconductor for a light emitting layer, comprising: a first heating stage capable of heating to a first temperature in the same reaction chamber; A manufacturing apparatus, comprising: a second heating stage capable of heating to two temperatures; and a moving means for moving a growth substrate between the first heating stage and the second heating stage. 7. The apparatus for manufacturing a group III nitride semiconductor light emitting device according to claim 6, wherein a reaction gas flowing to the first heating stage and the second heating stage is controlled independently.