JPH03133146A - Manufacture of integrated circuit device - Google Patents
Manufacture of integrated circuit deviceInfo
- Publication number
- JPH03133146A JPH03133146A JP1272822A JP27282289A JPH03133146A JP H03133146 A JPH03133146 A JP H03133146A JP 1272822 A JP1272822 A JP 1272822A JP 27282289 A JP27282289 A JP 27282289A JP H03133146 A JPH03133146 A JP H03133146A
- Authority
- JP
- Japan
- Prior art keywords
- integrated circuit
- lead frame
- tape
- circuit device
- sealing resin
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 22
- 239000011347 resin Substances 0.000 claims abstract description 32
- 229920005989 resin Polymers 0.000 claims abstract description 32
- 238000007789 sealing Methods 0.000 claims abstract description 28
- 239000011888 foil Substances 0.000 claims description 18
- 238000000034 method Methods 0.000 claims description 6
- 229910052751 metal Inorganic materials 0.000 claims description 5
- 239000002184 metal Substances 0.000 claims description 5
- 238000000465 moulding Methods 0.000 claims description 4
- 239000000758 substrate Substances 0.000 claims description 2
- 239000000853 adhesive Substances 0.000 description 18
- 230000001070 adhesive effect Effects 0.000 description 18
- 229910052782 aluminium Inorganic materials 0.000 description 17
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 17
- 238000001721 transfer moulding Methods 0.000 description 8
- 229920003023 plastic Polymers 0.000 description 6
- 239000000463 material Substances 0.000 description 4
- 238000012546 transfer Methods 0.000 description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- 238000012360 testing method Methods 0.000 description 3
- 229920001187 thermosetting polymer Polymers 0.000 description 3
- 238000007796 conventional method Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 1
- CWYNVVGOOAEACU-UHFFFAOYSA-N Fe2+ Chemical compound [Fe+2] CWYNVVGOOAEACU-UHFFFAOYSA-N 0.000 description 1
- BZHJMEDXRYGGRV-UHFFFAOYSA-N Vinyl chloride Chemical compound ClC=C BZHJMEDXRYGGRV-UHFFFAOYSA-N 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 238000010297 mechanical methods and process Methods 0.000 description 1
- 230000015654 memory Effects 0.000 description 1
- 230000008520 organization Effects 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
Landscapes
- Credit Cards Or The Like (AREA)
- Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明は、データを処理または記憶する集積回路素子を
内蔵し、外部装置との間でデータの授受ができるICカ
ード等に用いられる集積回路装置の製造方法に関するも
′のである。DETAILED DESCRIPTION OF THE INVENTION Field of Industrial Application The present invention relates to an integrated circuit device used in an IC card, etc., which has a built-in integrated circuit element for processing or storing data, and is capable of exchanging data with an external device. This also concerns the manufacturing method.
従来の技術
近年、マイクロコンピュータ、メモリ等の集積回路素子
をプラスチック製カードに搭載または埋設したいわゆる
ICカードが実用化されつつある。2. Description of the Related Art In recent years, so-called IC cards, in which integrated circuit elements such as microcomputers and memories are mounted or embedded in plastic cards, have been put into practical use.
このICカードはすでに多量に使用されている磁気スト
ライプカードに比して記憶容量が大きく、また機密保持
の点に優れているため、金融関係、クレジット関係、医
療関係など多くの分野で実用化されつつある。This IC card has a larger storage capacity than the already widely used magnetic stripe card and is superior in terms of confidentiality, so it has been put into practical use in many fields such as finance, credit, and medical care. It's coming.
このようなICカードは、塩化ビニル等のプラスチック
カードに、リーダ・ライタ等の外部装置との接続端子を
有する集積回路装置が搭載された構成であり、この集積
回路装置は構造が簡単で寸法精度がよく、きわめて薄型
にすることが必要とされる。このため集積回路装置は、
金属薄板を所望する電極形状に形成したリードフレーム
を用いて作製されている。Such an IC card has a structure in which an integrated circuit device having connection terminals for external devices such as a reader/writer is mounted on a plastic card such as vinyl chloride, and this integrated circuit device has a simple structure and high dimensional accuracy. It is necessary to make it extremely thin. For this reason, integrated circuit devices
It is manufactured using a lead frame made of a thin metal plate formed into a desired electrode shape.
以下に、集積回路装置の従来の製造方法について説明す
る。A conventional method of manufacturing an integrated circuit device will be described below.
第2図は集積回路装置の斜視図、第3図はこの集積回路
装置2oに用いられるリードフレームの平面図、第4図
(、)から(f)は外部接続用端子面を下方に向けて示
した従来の集積回路装置の製造方法で第3図o −o断
面図である。第3図および第4図(a)に示すようにリ
ードフレーム1ooは、集積回路素子搭載部101と複
数のKW部102とを有している。そして、第4図(b
)に示すようにこのリードフレームの一方の面100
aにプラスチック製のテープ103を付着し、他方の面
100b上に接着剤104を塗布して集積回路素子j0
5を搭載して同図(C)の構成とする。次にワイヤー1
08によって集積回路素子105と対応する電極部10
2とを電気的に接続して同図(d)とし、その後、この
中間材を金型等の基体内に設置して同図(e)のように
集積回路素子105およびワイヤー106を覆うように
封止樹脂107を成形する。Fig. 2 is a perspective view of the integrated circuit device, Fig. 3 is a plan view of the lead frame used in this integrated circuit device 2o, and Figs. FIG. 3 is a sectional view taken along line o-o of the conventional integrated circuit device manufacturing method shown in FIG. As shown in FIGS. 3 and 4(a), the lead frame 1oo has an integrated circuit element mounting section 101 and a plurality of KW sections 102. And Fig. 4 (b
) As shown in FIG.
A plastic tape 103 is attached to the surface 100a, and an adhesive 104 is applied to the other surface 100b to attach the integrated circuit element j0.
5 is installed to form the configuration shown in FIG. 5(C). Next wire 1
08, the electrode part 10 corresponding to the integrated circuit element 105
2 are electrically connected to form the figure (d), and then this intermediate material is placed in a base such as a mold to cover the integrated circuit element 105 and the wire 106 as shown in the figure (e). A sealing resin 107 is molded.
その後、この中間材を基体内から取り出し、プラスチッ
ク製のテープ103をはがしてリードフレーム1ooの
一方の面jooaを外部接続用端子面として露出させ、
最後にリードフレーム1o。After that, this intermediate material is taken out from inside the base, and the plastic tape 103 is peeled off to expose one surface jooa of the lead frame 1oo as a terminal surface for external connection.
Finally, lead frame 1o.
の支持部108を切断して第4図(f)および第2図に
示す集積回路装置20を得ている(特開昭62−194
96号公報)。The integrated circuit device 20 shown in FIG. 4(f) and FIG. 2 is obtained by cutting the support portion 108 of the
Publication No. 96).
発明が解決しようとする課題
このような、゛リードフレームの一方の面、100aに
テープ103を付着して集積回路装置20を作製する工
法は、集積回路装置20の外部接続用端子面100aに
封止樹脂107の回り込みによる薄ばりが発生しないと
いう点で有効な方法である。Problems to be Solved by the Invention This method of fabricating the integrated circuit device 20 by attaching the tape 103 to one surface 100a of the lead frame is to attach a seal to the external connection terminal surface 100a of the integrated circuit device 20. This is an effective method in that thinning does not occur due to the wrapping of the stopper resin 107.
しかしながら上記の製造方法では、封止樹脂107を成
形する際に、集積回路素子搭載部1o1と電極部102
間や電極102同志間などのリードフレーム100の溝
部100Kにおいて空気が密閉され気泡となって残るた
め、成形後にこの部分で封止樹脂IQ7の未充填が発生
し易かった。このような封止樹脂107の未充填は集積
回路装置2゜の耐水性や耐湿性を著しく悪化し、集積回
路素子106の入出力端子部分の腐食の原因となるため
、溝部100χにおける封止樹脂107の充填性を如何
にして向上するかが従来技術の課題となっていた。However, in the above manufacturing method, when molding the sealing resin 107, the integrated circuit element mounting part 1o1 and the electrode part 102 are
Since air is sealed and remains as bubbles in the grooves 100K of the lead frame 100, such as between the gaps and between the electrodes 102, unfilling of the sealing resin IQ7 was likely to occur in these areas after molding. If the sealing resin 107 is not filled, the water resistance and moisture resistance of the integrated circuit device 2° will be significantly deteriorated, and the input/output terminal portion of the integrated circuit element 106 may be corroded. How to improve the filling properties of 107 has been a problem in the prior art.
本発明はこのような課題を解決するもので、外部接続用
端子面にテープを付着することによって薄ばりの発生を
抑えるとともに、リードフレームの溝部の充填性を向上
する集積回路装置の製造方法とすることを目的としてい
る。The present invention solves these problems, and provides a method for manufacturing an integrated circuit device that suppresses the occurrence of thinning by attaching tape to the external connection terminal surface and improves the ability to fill the grooves of the lead frame. It is intended to.
課題を解決するための手段
こp目的を達成するために本発明は、集積回路素子搭載
部と複数の電極部とからなるリードフレームの一方の面
に通気性のあるテープを付着する工程と、前記リードフ
レームの他方の面の集積回路素子搭載部上に接着剤を介
して集積回路素子を搭載する工程と、前記集積回路素子
の入出力端子と前記電極とを電気的に接続する工程と、
前記リードフレームの他方の面において少なくとも前記
集積回路素子および電気的接続手段を封止樹脂で覆う工
程と、前記テープをはがす工程と、前記リードフレーム
の集積回路素子搭載部および電極部の支持部を切り離す
工程とからなる集積回路装置の製造方法とするものであ
る。Means for Solving the Problems To achieve the object, the present invention includes the steps of: attaching a breathable tape to one surface of a lead frame comprising an integrated circuit element mounting section and a plurality of electrode sections; a step of mounting an integrated circuit element on the integrated circuit element mounting portion on the other side of the lead frame via an adhesive; a step of electrically connecting the input/output terminal of the integrated circuit element and the electrode;
A step of covering at least the integrated circuit element and the electrical connection means with a sealing resin on the other surface of the lead frame, a step of peeling off the tape, and a supporting part of the integrated circuit element mounting part and the electrode part of the lead frame. The present invention provides a method for manufacturing an integrated circuit device, which comprises a step of separating.
作 用
この製造方法とすることによって、樹脂封止の際にリー
ドフレームの溝部に発生した気泡が樹脂の圧力によって
通気性のあるテープを通って外部に押し出されるため、
封止樹脂の充填性を向上することができる。また、テー
プはリードフレームの外部接続用端子面と密着している
ため、この面に封止樹脂が回り込むことがなく、薄ばり
の発生もない。Function: By using this manufacturing method, air bubbles generated in the groove of the lead frame during resin sealing are pushed out through the breathable tape by the pressure of the resin.
The filling properties of the sealing resin can be improved. Further, since the tape is in close contact with the external connection terminal surface of the lead frame, the sealing resin does not wrap around this surface, and no thinning burrs occur.
実施例
以下に本発明の一実施例について、図面を参照しながら
説明する。EXAMPLE An example of the present invention will be described below with reference to the drawings.
第1図(a)から(f)は本発明の実施例の集積回路装
置の製造方法を示した断面図である。第1図において、
1はリードフレーム、1aはリードフレーム1の一方の
面、1bはリードフレーム1の他方の面、1xはリード
フレームの溝部、2は集積回路素子搭載部、3は電極部
、4はテープ用接着剤、6は多孔性のアルミ箔、6は集
積回路素子用接着剤、7は集積回路素子、8は金細線、
9は封止樹脂、1oはトランスファ成形金型、10aは
トランスファ成形金型10の下金型の表面、11はトラ
ンスフ1成形金型の封止樹脂注入口、12は同じく排気
口である。FIGS. 1(a) to 1(f) are cross-sectional views showing a method of manufacturing an integrated circuit device according to an embodiment of the present invention. In Figure 1,
1 is a lead frame, 1a is one surface of the lead frame 1, 1b is the other surface of the lead frame 1, 1x is a groove of the lead frame, 2 is an integrated circuit element mounting portion, 3 is an electrode portion, and 4 is an adhesive for tape 6 is a porous aluminum foil, 6 is an adhesive for integrated circuit elements, 7 is an integrated circuit element, 8 is a thin gold wire,
9 is a sealing resin, 1o is a transfer mold, 10a is a surface of the lower mold of the transfer mold 10, 11 is a sealing resin inlet of the transfer mold 1 mold, and 12 is an exhaust port.
まず、厚さ0.15mの鉄系金属薄板をエツチング加工
し、集積回路素子搭載部2および電極部3を有するリー
ドフレーム1を作製した(第1図(a))。First, a ferrous metal thin plate having a thickness of 0.15 m was etched to produce a lead frame 1 having an integrated circuit element mounting part 2 and an electrode part 3 (FIG. 1(a)).
ここでリードフレーム1は従来例の第3図に示すリード
フレーム1oOと同じ形状のものを用い。Here, the lead frame 1 has the same shape as the conventional lead frame 1oO shown in FIG. 3.
その電極部3の寸法は3.0mX 2.1 mlとし、
その配置はl5O(国際標準化機構)によって定められ
た規格に準拠した。次に、このリードフレームの一方の
而1aに熱硬化性のテープ用接着剤4を約10μmの厚
さで塗布し、この上に厚さ20μmの多孔性のアルミ箔
6を付着した後、1時間150℃の高温漕中でこのテー
プ用接着剤4を硬化した(第1図Q)))。ここで、多
孔性のアルミ箱6には、アルミ箔をエツチング処理して
直径的10から20μmの孔を1平方七ンチ当9600
個以上空けたものを用いた。The dimensions of the electrode part 3 are 3.0 m x 2.1 ml,
The arrangement complied with the standards set by I5O (International Organization for Standardization). Next, a thermosetting tape adhesive 4 is applied to one side 1a of the lead frame to a thickness of about 10 μm, and a porous aluminum foil 6 of 20 μm thick is attached thereon. This tape adhesive 4 was cured in a high temperature bath at 150° C. (FIG. 1 Q)). Here, in the porous aluminum box 6, aluminum foil is etched to form 9,600 holes with a diameter of 10 to 20 μm per 1 square 7 inches.
I used one with at least one space between the two.
次に、リードフレーム1の他方の面1bの集積回路素子
搭載部2上に熱硬化性の集積回路素子用接着剤6を約3
011mの厚さで塗布し、その上に集積回路素子7を搭
載した後1時間150Cの高温漕中でこの集積回路素子
用接着剤6を硬化した(第1図(C))。Next, about 30 minutes of thermosetting integrated circuit element adhesive 6 is applied onto the integrated circuit element mounting portion 2 on the other side 1b of the lead frame 1.
After applying the adhesive 6 to a thickness of 0.011 m and mounting the integrated circuit element 7 thereon, the adhesive 6 for integrated circuit elements was cured in a high temperature bath at 150 C for 1 hour (FIG. 1(C)).
そして、この集積回路素子7の入出力端子と対応する電
極部とを線径26μmの金細線8によって電気的に接続
した(第1図(d))。Then, the input/output terminals of this integrated circuit element 7 and the corresponding electrode portions were electrically connected by a thin gold wire 8 having a wire diameter of 26 μm (FIG. 1(d)).
その後、この中間材をアルミ箔6がトランスファ成形金
型1oの下金型表面10aに当接するようにトランスフ
1成形金型10中に設置し、金型温度1eo℃で封止樹
脂注入口11からエポキシ系の封止樹脂9を注入して集
積回路素子7および金納M8を封止した(第1図(e)
)。ここで、このアルミ箔5が当接する下金型表面10
aにはエツチングによって粗面化処理が施されており、
リードフレームの溝部1xからアルミ箔6を通って排出
された空気が、この粗面化部分からトランスファ成形金
型1oの排気口12にぬけるようになっている。Thereafter, this intermediate material is placed in the transfer molding mold 10 so that the aluminum foil 6 is in contact with the lower mold surface 10a of the transfer molding mold 1o, and the sealing resin injection port 11 is placed at a mold temperature of 1eo°C. An epoxy-based sealing resin 9 was injected to seal the integrated circuit element 7 and the metal plate M8 (Fig. 1(e)).
). Here, the lower mold surface 10 that this aluminum foil 5 contacts
A has been roughened by etching,
Air discharged from the groove portion 1x of the lead frame through the aluminum foil 6 is allowed to pass through this roughened portion to the exhaust port 12 of the transfer molding die 1o.
こうして樹脂封止された中間材をトランスファ成形金型
10より取り出した後、アルミ箔5をはがし、リードフ
レーム1の支持部を切り離して第2図に示す集積回路装
置20を得た。この集積回路装置20の総厚は0.62
aiで、外周寸法は横12耀、縦10JImであった。After the resin-sealed intermediate material was taken out from the transfer mold 10, the aluminum foil 5 was peeled off and the supporting portion of the lead frame 1 was separated to obtain an integrated circuit device 20 shown in FIG. The total thickness of this integrated circuit device 20 is 0.62
ai, and the outer circumferential dimensions were 12 mm in width and 10 JIm in height.
こうして作製された集積回路装置2oの外部接続用端子
面には、封止樹脂9の薄ばりは発生しなかった。また、
リードフレーム1の溝部1xの封止樹脂9中には未充填
は見られなかった。そして。No thinning of the sealing resin 9 was observed on the external connection terminal surface of the integrated circuit device 2o manufactured in this manner. Also,
No unfilled portion was found in the sealing resin 9 in the groove 1x of the lead frame 1. and.
この集積回路装置20の耐湿試験を行なった結果、プレ
ッシャー・クツカー試験500時間以上、高温高湿試験
2000時間以上をクリアした。This integrated circuit device 20 was subjected to a moisture resistance test, and as a result, it passed a pressure/kutsuka test for more than 500 hours and a high temperature and high humidity test for more than 2000 hours.
本実施例の製造方法において、製造時にリードフレーム
1の溝部1!から封止樹脂9がアルミ箔6の孔を通って
しみだしてきたが、これらはアルミ箔6をはがす際にア
ルミ箔6とともに除去された。In the manufacturing method of this embodiment, the groove 1! of the lead frame 1 during manufacturing! The sealing resin 9 seeped out through the holes in the aluminum foil 6, but this was removed together with the aluminum foil 6 when the aluminum foil 6 was peeled off.
また、テープ用接着剤4はアルミ箔5の孔部分に入り込
んで硬化するため、アルミ箔5と強く密着し、アルミ箔
5をリードフレーム1からはがす際にアルミ箔Sととも
に除去され、リードフレーム1の外部接続用端子面1a
(llIIに残ることはなかった。また、このために完
成した集積回路装置2゜の外部接続用端子面1aは、テ
ープ用接着剤4の厚さの分だけ封止樹脂面からくぼんだ
状態となったが、これは機能上および外観上の支障をき
たさない程度のものであった。In addition, since the tape adhesive 4 enters the holes in the aluminum foil 5 and hardens, it adheres strongly to the aluminum foil 5 and is removed together with the aluminum foil S when the aluminum foil 5 is peeled off from the lead frame 1. External connection terminal surface 1a
(It did not remain in the llII. Also, the external connection terminal surface 1a of the completed integrated circuit device 2° was recessed from the sealing resin surface by the thickness of the tape adhesive 4. However, this was to the extent that it did not cause any problems in terms of functionality or appearance.
なお、本実施例ではリードフレーム1に付着するテープ
として多孔性のアルミ箔6を用いたが。Note that in this embodiment, porous aluminum foil 6 was used as the tape attached to the lead frame 1.
通気性のある耐熱テープであれば例えば繊維状の耐熱性
プラスチックテープ等それ以外のものを用いてもよい。Other breathable heat-resistant tapes, such as fibrous heat-resistant plastic tapes, may also be used.
また、本実施例ではテープ用接着剤3に熱硬化性の樹脂
を用いたが、それ以外にも粘着剤や常温硬化、紫外線硬
化性等の接着剤を用いてもよい。Further, in this embodiment, a thermosetting resin is used as the tape adhesive 3, but other adhesives such as adhesives, room temperature curing adhesives, ultraviolet curable adhesives, etc. may be used.
また、本実施例ではトランスファ成形金型の下金型はエ
ツチングによって粗面化したが、それ以外にも例えば研
磨等の機械的な方法で粗面化してもよい。Further, in this embodiment, the surface of the lower die of the transfer molding die was roughened by etching, but the surface may be roughened by other mechanical methods such as polishing.
発明の効果
以上のように本発明は、リードフレームの一方の面に通
気性のあるテープを付着し、他方の面に集積回路素子を
搭載して電気的に接続し、この集積回路素子および電気
的接続手段を封止樹脂で覆った後、前記テープをはがす
製造方法であるため、従来の製造工程を変更することな
しに封止樹脂の充填性を上げるとともに、耐水性および
耐湿性に優れた集積回路装置を作製することを可能とす
るものである。Effects of the Invention As described above, the present invention provides a lead frame with a breathable tape attached to one side, an integrated circuit element mounted on the other side, and electrically connected. The manufacturing method involves covering the connecting means with sealing resin and then peeling off the tape, which improves the fillability of the sealing resin without changing the conventional manufacturing process, and provides excellent water and moisture resistance. This makes it possible to manufacture integrated circuit devices.
また、この通気性テープに複数の孔を有する金属箔を用
いることにより、高価な耐熱性プラスチックテープを用
いる必要がなくなるため、従来よりも製造コストを小さ
くすることが可能となる。Furthermore, by using a metal foil having a plurality of holes for this breathable tape, there is no need to use an expensive heat-resistant plastic tape, making it possible to lower manufacturing costs than before.
さらに、封止樹脂を成形する際に、この通気性テープを
表面を粗面化処理した基体上に設置すれば、通気性テー
プを通して排出される空気の排気効率を上げることがで
きるため、より完全な充填状態で封止樹脂を成形するこ
とができる。Furthermore, when molding the sealing resin, if this breathable tape is installed on a substrate with a roughened surface, it is possible to increase the exhaust efficiency of the air exhausted through the breathable tape, making it more perfect. The sealing resin can be molded in a filled state.
第1図は本発明の一実施例における集積回路装置の製造
方法を示した断面図、第2図は集積回路装置の斜視図、
第3図はこの集積回路装置を製造する際に用いられるリ
ードフレームの平面図、第4図は従来の集積回路装置の
製造方法を示した断面図である。
1・・・・・・リートフレー+、1 a−・・−・リー
ドフレームの一方の面、1b・・・・・・リードフレー
ムの他方の面、1x・・・・・・リードフレームの溝部
、2・・・・・・集積回路素子搭載部、3・・・・・・
電極部、4・・・・・・テープ用接着剤、5・・・・・
・多孔性のアルミ箔、6・・・・・・集積回路素子用接
着剤、了・・・・・・集積回路素子、8・川・・金細線
、9・・・・・・封止樹脂、10・・・・・・トランス
ファ成形金型、10a・・・・・・トランスファ成形金
型の下金型表面、11・・・・・・トランスファ成形金
型の封止樹脂注入口、12・・・・・・トランスファ成
形金型の排気口。FIG. 1 is a cross-sectional view showing a method of manufacturing an integrated circuit device according to an embodiment of the present invention, FIG. 2 is a perspective view of the integrated circuit device,
FIG. 3 is a plan view of a lead frame used in manufacturing this integrated circuit device, and FIG. 4 is a sectional view showing a conventional method of manufacturing an integrated circuit device. 1...Reet frame+, 1a-...One surface of the lead frame, 1b...The other surface of the lead frame, 1x...Groove portion of the lead frame, 2... Integrated circuit element mounting section, 3...
Electrode part, 4... Adhesive for tape, 5...
・Porous aluminum foil, 6...adhesive for integrated circuit elements, finished...integrated circuit elements, 8. gold wire, 9... sealing resin , 10...Transfer molding mold, 10a...Lower mold surface of transfer molding mold, 11...Sealing resin injection port of transfer molding mold, 12. ...Exhaust port of transfer molding mold.
Claims (3)
ードフレームの一方の面に通気性のあるテープを付着す
る工程と、前記リードフレームの他方の面の集積回路素
子搭載部上に接着剤を介して集積回路素子を搭載する工
程と、前記集積回路素子の入出力端子と前記電極とを電
気的に接続する工程と、前記リードフレームの他方の面
において少なくとも前記集積回路素子および電気的接続
手段を封止樹脂で覆う工程と、前記テープをはがす工程
と、前記リードフレームの集積回路素子搭載部および電
極部の支持部を切り離す工程とからなる集積回路装置の
製造方法。(1) A step of attaching a breathable tape to one side of a lead frame consisting of an integrated circuit element mounting part and a plurality of electrode parts, and adhering it to the integrated circuit element mounting part on the other side of the lead frame. a step of electrically connecting the input/output terminals of the integrated circuit device to the electrodes; and a step of electrically connecting the integrated circuit device and the electrodes on the other surface of the lead frame. A method for manufacturing an integrated circuit device, comprising the steps of: covering a connecting means with a sealing resin; peeling off the tape; and separating an integrated circuit element mounting portion of the lead frame and a supporting portion of an electrode portion.
特許請求の範囲第1項記載の集積回路装置の製造方法。(2) The method for manufacturing an integrated circuit device according to claim 1, wherein a metal foil having a plurality of holes is used as the tape.
体の表面上に設置される特許請求の範囲第1項または第
2項記載の集積回路装置の製造方法。(3) The method for manufacturing an integrated circuit device according to claim 1 or 2, wherein the tape is placed on the surface of the substrate that has been roughened during molding of the sealing resin.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1272822A JPH03133146A (en) | 1989-10-19 | 1989-10-19 | Manufacture of integrated circuit device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1272822A JPH03133146A (en) | 1989-10-19 | 1989-10-19 | Manufacture of integrated circuit device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH03133146A true JPH03133146A (en) | 1991-06-06 |
Family
ID=17519245
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP1272822A Pending JPH03133146A (en) | 1989-10-19 | 1989-10-19 | Manufacture of integrated circuit device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH03133146A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2684802A1 (en) * | 1991-12-04 | 1993-06-11 | Gemplus Card Int | Method of moulding micromodules of integrated circuits |
US7294907B2 (en) * | 2003-07-01 | 2007-11-13 | Matsushita Electric Industrial Co., Ltd. | Solid-state imaging device and method for manufacturing the same |
-
1989
- 1989-10-19 JP JP1272822A patent/JPH03133146A/en active Pending
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2684802A1 (en) * | 1991-12-04 | 1993-06-11 | Gemplus Card Int | Method of moulding micromodules of integrated circuits |
US7294907B2 (en) * | 2003-07-01 | 2007-11-13 | Matsushita Electric Industrial Co., Ltd. | Solid-state imaging device and method for manufacturing the same |
CN100428482C (en) * | 2003-07-01 | 2008-10-22 | 松下电器产业株式会社 | Solid-state imaging device and method for manufacturing the same |
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