JPH0278571U - - Google Patents
Info
- Publication number
- JPH0278571U JPH0278571U JP15923988U JP15923988U JPH0278571U JP H0278571 U JPH0278571 U JP H0278571U JP 15923988 U JP15923988 U JP 15923988U JP 15923988 U JP15923988 U JP 15923988U JP H0278571 U JPH0278571 U JP H0278571U
- Authority
- JP
- Japan
- Prior art keywords
- heater
- single crystal
- reaction tube
- semiconductor
- quartz reaction
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000013078 crystal Substances 0.000 claims description 5
- 239000004065 semiconductor Substances 0.000 claims description 4
- 239000010453 quartz Substances 0.000 claims 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 2
- 238000010438 heat treatment Methods 0.000 claims 1
- 239000002994 raw material Substances 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 2
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Description
第１図は本考案の半導体単結晶成長用ヒータの
一実施例を示す要部横断面図、第２図は温度分布
説明図、第３図は従来の単結晶成長用ヒータの横
断面図、第４図はヒータコイル形状説明図である
。
１：耐火物、２，３，６：ヒータコイル、４，
７：端子。
FIG. 1 is a cross-sectional view of essential parts showing an embodiment of the semiconductor single crystal growth heater of the present invention, FIG. 2 is a temperature distribution diagram, and FIG. 3 is a cross-sectional view of a conventional single crystal growth heater. FIG. 4 is an explanatory diagram of the shape of the heater coil. 1: Refractory, 2, 3, 6: Heater coil, 4,
7: Terminal.
Claims (1)
半導体原料を加熱反応させて単結晶を育成する半
導体単結晶成長用ヒータにおいて、前記ヒータが
小径部側は高温領域となり大径部側は低温領域と
なる如く形成された円錐形ヒータよりなることを
特徴とする半導体単結晶成長用ヒータ。 In a semiconductor single crystal growth heater that is installed on the outer periphery of a quartz reaction tube and grows a single crystal by heating and reacting the semiconductor raw material in the quartz reaction tube, the heater has a small diameter region in a high temperature region and a large diameter region in a low temperature region. 1. A heater for growing a semiconductor single crystal, comprising a conical heater formed as follows.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15923988U JPH0278571U (en) | 1988-12-07 | 1988-12-07 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15923988U JPH0278571U (en) | 1988-12-07 | 1988-12-07 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0278571U true JPH0278571U (en) | 1990-06-15 |
Family
ID=31440275
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP15923988U Pending JPH0278571U (en) | 1988-12-07 | 1988-12-07 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0278571U (en) |
-
1988
- 1988-12-07 JP JP15923988U patent/JPH0278571U/ja active Pending