JPS6228880U - - Google Patents
Info
- Publication number
- JPS6228880U JPS6228880U JP11899185U JP11899185U JPS6228880U JP S6228880 U JPS6228880 U JP S6228880U JP 11899185 U JP11899185 U JP 11899185U JP 11899185 U JP11899185 U JP 11899185U JP S6228880 U JPS6228880 U JP S6228880U
- Authority
- JP
- Japan
- Prior art keywords
- crucible
- single crystal
- growing
- inner diameter
- crystal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000013078 crystal Substances 0.000 claims description 11
- 229910013641 LiNbO 3 Inorganic materials 0.000 claims 1
- 238000010438 heat treatment Methods 0.000 claims 1
- 239000002184 metal Substances 0.000 claims 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Description
第１図ａ，ｂはこの考案の一実施例に係る単結
晶育成用るつぼを示す平面図と断面図、第２図ａ
，ｂは夫々従来とこの考案におけるるつぼ内の温
度分布を示す特性曲線図、第３図は従来の単結晶
育成用るつぼを設置した炉を示す断面図、第４図
ａ，ｂは従来の単結晶育成用るつぼを示す断面図
と平面図である。
４……るつぼ、４ａ……鍔部。
Figures 1a and b are a plan view and a sectional view showing a crucible for growing single crystals according to an embodiment of this invention, and Figure 2a is a
, b are characteristic curve diagrams showing the temperature distribution inside the crucible in the conventional method and this invention, respectively. FIG. 3 is a sectional view showing a furnace equipped with a conventional crucible for single crystal growth. It is a sectional view and a top view showing a crucible for crystal growth. 4... Crucible, 4a... Tsuba.
Claims (1)
状の金属製るつぼにおいて、上記るつぼの開口部
に、内径がるつぼ内径Ｄに等しく、幅Ｗが ＷＤ＝０．０４〜０．４０ を満足する大きさの鍔部を一体に設けてなること
を特徴とする単結晶育成用るつぼ。 (2) 上記単結晶は酸化物単結晶である実用新案
登録請求の範囲第１項記載の単結晶育成用るつぼ
。 (3) 上記酸化物結晶は、ＬｉＮｂＯ３、ＬｉＴ
ａＯ３、Ｌｉ２Ｂ４Ｏ７、ＣｄＷＯ４、ＺｎＷＯ
４のうち１種類もしくは２種類以上の混晶である
実用新案登録請求の範囲第２項記載の単結晶育成
用るつぼ。[Scope of Claim for Utility Model Registration] (1) In a bottomed cylindrical metal crucible used for high-frequency heating single crystal growth, the opening of the crucible has an inner diameter equal to crucible inner diameter D, and a width W WD= A crucible for growing a single crystal, characterized in that it is integrally provided with a flange portion having a size satisfying 0.04 to 0.40. (2) The crucible for growing a single crystal according to claim 1, wherein the single crystal is an oxide single crystal. (3) The above oxide crystal is LiNbO 3 , LiT
aO 3 , Li 2 B 4 O 7 , CdWO 4 , ZnWO
4. The crucible for growing a single crystal according to claim 2, which is a mixed crystal of one or two or more of the above.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11899185U JPS6228880U (en) | 1985-08-02 | 1985-08-02 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11899185U JPS6228880U (en) | 1985-08-02 | 1985-08-02 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6228880U true JPS6228880U (en) | 1987-02-21 |
Family
ID=31005958
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11899185U Pending JPS6228880U (en) | 1985-08-02 | 1985-08-02 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6228880U (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63319288A (en) * | 1987-06-23 | 1988-12-27 | Shin Etsu Handotai Co Ltd | Flanged quartz crucible |
| USD771167S1 (en) | 2013-08-21 | 2016-11-08 | A.L.M.T. Corp. | Crucible |
| JPWO2015064505A1 (en) * | 2013-10-30 | 2017-03-09 | 株式会社アライドマテリアル | crucible |
-
1985
- 1985-08-02 JP JP11899185U patent/JPS6228880U/ja active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63319288A (en) * | 1987-06-23 | 1988-12-27 | Shin Etsu Handotai Co Ltd | Flanged quartz crucible |
| USD771167S1 (en) | 2013-08-21 | 2016-11-08 | A.L.M.T. Corp. | Crucible |
| USD839444S1 (en) | 2013-08-21 | 2019-01-29 | A.L.M.T. Corp. | Crucible |
| USD872872S1 (en) | 2013-08-21 | 2020-01-14 | A.L.M.T. Corp. | Crucible |
| JPWO2015064505A1 (en) * | 2013-10-30 | 2017-03-09 | 株式会社アライドマテリアル | crucible |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPS6228880U (en) | ||
| JPS61183971U (en) | ||
| JPS6010197U (en) | Crucible for single crystal growth | |
| JPS6293378U (en) | ||
| JPS6215573U (en) | ||
| JPS63194293U (en) | ||
| JPH0363581U (en) | ||
| JPS6124472U (en) | Sublimation crystal growth equipment | |
| JPS59103767U (en) | carbon crucible | |
| JPS6241075U (en) | ||
| JPH02140980U (en) | ||
| JPS60373U (en) | Single crystal pulling device | |
| JPS59109775U (en) | Crucible for single crystal growth | |
| JPS59129881U (en) | Crystal pulling device | |
| JPH0261965U (en) | ||
| JPS61172168U (en) | ||
| JPS63162869U (en) | ||
| JPS6279882U (en) | ||
| JPS59172770U (en) | Vertical Bridgeman Crystal Growth Furnace | |
| JPS6159673U (en) | ||
| JPS6330356U (en) | ||
| JPS6398380U (en) | ||
| JPS61105671U (en) | ||
| JPS58155369U (en) | grahite crucible | |
| JPS6329094U (en) |