JPH01170017A - Semiconductor processing device - Google Patents

Abstract

PURPOSE:To prevent the adverse effect generated by the leak on the closely fixed surface of a reaction container and an airtight part by a method wherein a groove, having an air-exhaust hole, is provided on the closely fixed surface of the reaction container and the closely fixed part. CONSTITUTION:Annular grooves 113a and 113b, and the second and the third exhaust holes 109b and 109c are formed on the first and the second aperture terminal parts 111a and 111b respectively. Accordingly, even when a gap is generated on the closely fixed surface 112a and 112b between an aperture edge part 113a and the aperture edge part 111a and outside air is penetrated into the inner part through said gap, the air is entirely taken in by the annular grooves 113a and 113b located in the midway, and it is exhausted from an exhaust hole 109. As a result, the leak of the outside air into a reaction tube 103 can be prevented, and the adverse effect caused by the leak on the closely fixed surface between the reaction container and the closely fixed part can also be prevented.

Description

[Detailed description of the invention] [Purpose of the invention] (Industrial application field) The present invention relates to semiconductor processing equipment.

(Prior Art) Conventionally, a semiconductor processing apparatus shown in FIG. 4 is known as an apparatus for processing wafers such as oxidation and diffusion. To explain its structure, a reaction tube 403, which is a reaction vessel made of quartz, is horizontally arranged in a heating furnace 405, and a gas inlet 401 is provided therein. The reaction tube 403 is then hermetically sealed with a lid 407 which is a hermetically sealed portion made of quartz and provided with a gas exhaust port 409 . Here, the lid 407 is fitted into the open end 403a of the reaction tube 403 so that the open end 407a of the lid 407 is in close contact with the open end 403a of the reaction tube 403. Heating furnace 4
In step 05, a wafer (not shown) is placed in a reaction tube 403 set at a predetermined temperature, and a reaction gas is introduced from a gas inlet 401 to perform treatments such as oxidation and diffusion of the wafer. Unreacted gas and the like are then exhausted from the gas exhaust port 409.

(Problem to be solved by the invention) However, the temperature of the reaction tube 403 and the lid 407 is 800°C.
Since the open end 403 is exposed to an atmosphere at a temperature higher than
a and the opening end 407a may be distorted, resulting in a slight gap between the contact surfaces. For this reason, when performing treatments such as oxidation and diffusion, outside air enters through the gaps and the reaction tube 4
This may contaminate the inside of 03 or change the composition of the reaction gas. Further, when cleaning, for example, hydrochloric acid, is periodically introduced into the reaction tube 403 and the lid 407 through the gas inlet 401, the hydrochloric acid sometimes leaks outside through the gap and contaminates the inside of the clean room.

SUMMARY OF THE INVENTION An object of the present invention is to provide a semiconductor processing apparatus that solves the above-mentioned problems caused by leakage at the contact surface between the reaction container and the sealed portion.

[Structure of the Invention] (Means for Solving the Problems) In order to solve the above problems, the present invention includes a reaction container into which a semiconductor wafer is carried, and a sealing part for sealing this reaction container, The present invention provides a semiconductor heat processing apparatus, characterized in that a groove having an exhaust port is provided on a surface in close contact with the reaction vessel and the sealed portion.

(Function) By providing a groove with an exhaust port in the sealed surface between the reaction vessel and the sealed part, it is possible to prevent adverse effects caused by leakage at the sealed surface.

(Example) An example in which the present invention is applied to an oxidation/diffusion furnace will be described below with reference to FIG. A reaction tube 103, which is a reaction vessel made of quartz, is horizontally disposed in a heating furnace 105, and wafers (not shown) are placed therein on boats (not shown) at predetermined intervals. There is a gas inlet 101 at one end of this reaction tube 103, and an open end 103a on the opposite side.
There is. This reaction tube 103 has a closed section 116. It is sealed by. This sealing part 116 consists of a lid 115 and a ring 111, both of which are made of quartz. The ring 111 is the main exhaust port 1 for discharging unreacted gas, etc.
09a, and a first open end 111a and a second open end 111b, both of which are concave annular grooves 113a, 113b and a second exhaust port 109b.

A third exhaust port 109C is provided. Then, the surface of the first opening end 111a is rubbed together to form the opening end 10.
The lid 115 is brought into close contact with the surface of the second open end 111b, and the reaction tube 103 is hermetically sealed.

In this embodiment, the first and second open ends 111a,
1llb each has an annular groove 113a.

113b and the second. Third outlet 109b.

109c is formed. Therefore, for example, a gap is created between the contact surface 112a or the contact surface 112b between the open end 113a and the first open end 111a, and even if outside air enters the interior through this gap, the annular grooves 113a, 1
It is all taken in by 13b and discharged from the second exhaust port 109. This can prevent outside air from leaking into the reaction tube 103. Furthermore, when cleaning the inside of the reaction tube 103 and the ring 111 with, for example, hydrochloric acid, there was a risk of the hydrochloric acid leaking out from the contact surfaces 112a and 112b in the conventional device, but in this device, the hydrochloric acid is removed from the annular groove. 113
a, 113b, and the second. Third exhaust port 109b, 109c
more excreted. Therefore, it is possible to prevent the interior of the clean room from being contaminated with hydrochloric acid. Moreover, it is larger than the taper device (taper ratio: 0.1) of the open end 103a. Therefore, the opening end 103a and the second opening end 111a
When the two are rubbed together, the two can be easily removed because they do not come into close contact. Therefore, the lid 1 when carrying the boat carrying wafers into and out of the reaction tube 103
The opening and closing of 15 can be easily automated. Further, since all the exhaust ports of the ring 111 between the reaction tube 103 and the lid 115 are provided, the reaction tube 103 has no extra protrusions and can be easily taken out from the heating furnace 105 at the time of maintenance.

Next, a modification of this embodiment will be explained using FIG. 2, which is an enlarged view of the main part. The annular groove 113a on the close contact surface 112a side is formed on the open end 103a side, and the annular groove 113b on the close contact surface 112b side is provided on the lid 115 side. Even with such a configuration, the same effects as in the first embodiment can be achieved.

Next, a second embodiment will be described using FIG. 3, which is an enlarged view of the main part. A lid 117, which is a sealing part made of quartz, is brought into close contact with the open end 103a of the reaction tube 103 by sliding the lid 117 directly onto the open end 103a of the reaction tube 103. The main exhaust port 109 is located in this lid body 117.
a and a second exhaust port 109b are provided. Therefore, the annular groove 113a and the second exhaust port 109b can prevent adverse effects caused by leakage of outside air or the like from the close contact surface 112a.

Note that in the first embodiment, the reaction tube 103. ring 11
1 and the first and second embodiments, the lid body 115.1
17 are all made of quartz, but the material is not limited to this, and for example, silicon carbide may be used. Also, the first to fs2
In the embodiment described above, the grooves provided in each part are annular, but the groove is not limited to this, and for example, the groove may be in the shape of a single spiral.

Furthermore, it goes without saying that the semiconductor processing apparatus according to the present invention can also be used in a CVD apparatus.

[Effect of the invention] As detailed above, in the present invention, the reaction vessel.

It is possible to prevent the adverse effects caused by leakage from the surface that is in close contact with the container and the sealed part.

Ll,, [Brief description of the drawings] 103...Reaction tube 103a...Open end 105...Heating furnace 109a...Main discharge port 109b...Second discharge port 109c...No. No. 3 discharge port 111...Summing 111a...Second open end 111b...Third open end 112a, 112b...Adherence surface 113a, 113b...Annular groove 115.117 ... Lid application agent Patent attorney Noriyuki Norichika Kikuo Takehana 1-1m Cicada 2 Orthopedic J Figure 1' Present procedure amendment (method) 1. Indication of the case Patent application Sho, No. 62-3>7171 & Person making the amendment Relationship to the case Last applicant (307) Toshiba Corporation 4, Agent 1-1 Shibaura-chome, Minato-ku, Tokyo 105 Shares Toshiba Company Headquarters Office March 22, 1960 (shipment date) As detailed above, in the present invention, it is possible to prevent the adverse effects caused by leakage from the surface that is in close contact with the reaction container and the sealed part.

[Brief explanation of the drawing]

FIG. 1 shows an oxidation/diffusion apparatus showing a first embodiment of the present invention. FIG. 2 is an enlarged view of main parts of a modification of the device of the first embodiment. FIG. 3 is an enlarged view of main parts of an oxidation diffusion device showing a second embodiment. Figure 4 shows a conventional oxidation diffusion device. 101... Gas introduction pipe 103... Reaction tube 103a... Open end 105... Heating furnace 109a... Main outlet 109b... Second outlet 109c... Third outlet Outlet 111...Ring 111a...Second open end 111b...Third open end 112a, 112b--Adhering surface 113a
, 113b-annular groove 115.117... Lid application agent Patent attorney Kensuke Norichika

Claims (3)

[Claims] (1) It is characterized by comprising a reaction container into which a semiconductor wafer is carried, and a sealing part for sealing the reaction container, and a groove having an exhaust port is provided on the surface in close contact with the reaction container and the sealing part. Semiconductor heat treatment equipment. (2) The thermal semiconductor processing apparatus according to claim 1, wherein the sealing portion comprises a ring and a lid. (3) The groove is formed in the first opening and the second opening of the ring.
Thermal semiconductor processing apparatus described in 1.