JPH01106472A - Solar cell - Google Patents

Abstract

PURPOSE:To facilitate providing a light scattering structure at the boundary between a translucent electrode and a semiconductor layer by a simple process by a method wherein islands made of silicon oxide are formed dispersed on the surface of the transparent electrode brought into contact with the semiconductor layer. CONSTITUTION:A silicon oxide island 14 has a particle shape with a height approximately 500Angstrom and is made of SiO2. The islands 14 are formed on the surface 11a of a translucent electrode 11 before a semiconductor layer 12 is formed. In other words, mixture composed of resin such as acrylic resin, phenolic resin or epoxy resin and 1-30wt.% of SiO2 paste mixed with the resin is prepared first. For this purpose, the recommended SiO2 paste is composed of organic solvent and 50-90wt.% of glass powder (SiO2) mixed with the solvent. Then the mixture is applied to the translucent electrode surface 11a uniformly with a thickness about 50-200mum by screen printing and baked in the air at 400-600 deg.C. As a result, only SiO2 in the mixture is left and scattered to form the islands.

Description

DETAILED DESCRIPTION OF THE INVENTION ((a) Invention in the field of industrial application is related to the sun as a pond.) Conventional technology Figure 2 shows the conventional solar technology described in Japanese Patent Publication No. 7716/1983. Electric mt- is shown, width is transparent substrate, +21
(c) A transparent electrode; 13+ is an amorphous silicon semiconductor layer; 14+ is a back electrode; the surface (2a) of the transparent electrode in contact with the semiconductor $131 is uneven;

Such a sun t7tljc, as shown by the arrow in the figure,
The light incident perpendicularly into the substrate is exposed to the transparent electrode surface (2a).
The light is scattered by the unevenness of the semiconductor layer and passes diagonally through the semiconductor layer.As a result, the optical path length of the incident light in the semiconductor 1m becomes longer and the generated current increases.

Pl Problems to be Solved by the Invention In the above-mentioned conventional structure, the work of processing the light-transmitting electrode surface (2a) into a completely uneven shape is a little complicated.

Therefore, does the present invention simplify the work? A novel and adaptable solar tank structure is provided.

2) A friendly means to solve all the problems The uninvented solar cell has a transparent substrate (
Excavated transparent electrode σ11, non-single crystal semiconductor! (121 and back electrode 03 are injected) In the t configuration, the semiconductor layer (1
□(e) production characterized by forming silicon oxide islands Ut-dispersed on the transparent electrode surface C11a) in contact with 21.
As shown by the arrow in FIG. pass.

(v) Embodiment Referring to FIG. 1 showing an embodiment of the invention, the substrate 1tJ
1 is made of translucent glass, and the translucent electrode Qll is the substrate 1
ITO film with a thickness of 2UOOA and SSn0z with a thickness of 50OA are all sequentially deposited on llJ.
is made of amorphous silicon, and has a transparent electrode surface (l
la) with a P-type layer of 20 OA thickness and 1 layer of 5000 OA thickness.
The back electrode Q31 is formed by sequentially depositing a mold layer, an n-type layer with a thickness of 1000χ, and gold.The back electrode Q31 is formed by sequentially depositing At and T1 on the surface of the n-type layer constituting the semiconductor 1021. , has a thickness of 2000A.

The silicon oxide island t14, which is a feature of this embodiment, is 500
It is composed of grain-shaped SiO2 with a height of χ, which is a semiconductor @
It is formed on the transparent electrode surface (lla) before the formation of az. That is, first, a resin such as acrylic resin, phenolic resin, or epoxy resin is coated with 5102 base at a total of 1 to 30 W.
A suitable 8102 paste for this purpose is a mixture of glass powder (SiOz) i50 to 9QWt96 in an organic solvent.Next, the mixture is screen printed. It was applied uniformly to a thickness of 50 to 200 μm on the transparent electrode surface (lla) and baked at 400 to 600 'C in the air. As a result, only 8102 in the mixture was dispersed in the form of islands. In the non-example solar cell that remains, the refractive index of the semiconductor layer (12+) is 3.5, whereas that of the silicon oxide island I is 165, and this refractive index difference between the semiconductor layer and the semiconductor layer (Light is scattered at the boundary with 121. Second, the distance that the light travels within the semiconductor layer σ3 increases, and the generated current increases.
When comparing the solar TL pond with the solar TL pond of the same structure without only the island α4, the circuit current of the former increases by 5 to 1096 compared to the latter. Once constructed, it becomes possible to provide a light-scattering structure at the boundary between the transparent conductive layer and the semiconductor layer with simple work.

[Brief explanation of the drawing]

1 and 2 are cross-sectional views showing an embodiment of the present invention and a conventional example, respectively.

Claims (1)

[Claims] (1) In a solar cell in which a transparent electrode, a non-single crystal semiconductor layer, and a back electrode are laminated on a transparent substrate, islands of silicon oxide are dispersed and formed on the surface of the transparent electrode in contact with the semiconductor layer. A solar cell characterized by: