JPH0765348A - Intrasurface magnetic recording medium - Google Patents

Abstract

PURPOSE:To obtain an intrasurface magnetic recording medium excellent in magnetic characteristics such as a high coercive force and suitable for a super- high density magnetic recording. CONSTITUTION:Prior to forming a Co-alloy magnetic film, a thin film 2 to control the structure is formed an a substrate 1. This thin film is a magnetic film comprising a Cr alloy with addition of at least one element selected from among Hf, Ir, Mo, Pd, Pt, Re, Ta, Ti and Zr. Further, a nucleus generation control layer constituted of an amorphous thin film of one or more elements selected from among Si, Ge, C and B is formed between the thin film 2 and the substrate. By this method, controllability of the crystal grain size and the intrasurface orientation of the Co-based alloy magnetic thin film formed on a thin film to control the structure can be improved so that the grain size of the obtd. magnetic film is proper and magnetically isolated. When the thin film is magnetized, the magnetic cluster formed can be small. Thus, the obtd. magnetic recording medium has excellent magnetic characteristics such as a high coercive force and is suitable for a superhigh density magnetic recording.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an in-plane magnetic recording medium suitable for high density magnetic recording.

[0002]

2. Description of the Related Art In-plane magnetic recording is a method of performing magnetic recording by magnetizing in parallel to the surface of a magnetic recording medium and magnetizing the N poles and N poles of the magnetic poles and the S poles and S poles of the magnetic poles in abutting direction. .
In order to increase the recording density in the longitudinal magnetic recording, it is necessary to reduce the film thickness of the magnetic film that is the recording medium and increase the coercive force in order to influence the demagnetizing field during recording. Further, it is necessary to orient the easy axis of magnetization of the magnetic film parallel to the substrate surface.
More preferably, the easy axis is oriented in a uniform direction.

Conventionally, Co has been used as an in-plane magnetic recording medium.
Co-based alloy thin films such as -Cr and Co-Ni are used,
Above all, Ta, Pt, M is added to the alloy containing Co-Cr as a main component.
A material to which o, Ru, Re, Fe, etc. are added is used. Co constituting the magnetic thin film for in-plane magnetic recording
The base alloy has a dense hexagonal (hcp) lattice structure and has an easy axis of magnetization in the c-axis, <001>, direction of this crystal. The axis needs to be highly oriented.

The longitudinal magnetic recording medium currently used is
The Co-based alloy thin film is formed on a NiP-coated Al substrate, a glass plate, or a non-magnetic substrate such as a plastic film such as polyimide or polyethylene terephthalate. However, C formed directly on the non-magnetic substrate
In the o-based alloy thin film, the c-axis, which is the easy axis of magnetization, is completely uneven, and the coercive force of the magnetic film is 1000 Oe (oersted).
It is small as follows and the performance characteristics as a high density magnetic recording medium are not good. Of the above Co-based alloy thin film crystal that is the magnetic layer
For the purpose of highly orienting the c-axis in the plane of the substrate, a Cr underlayer having a body-centered cubic lattice structure is formed on the substrate, and C is formed thereon.
A method for forming an o-based alloy magnetic thin film has been proposed and put to practical use. When the Cr underlayer is directly formed on the substrate, Cr microcrystal nuclei are formed at the initial stage of thin film growth, but the microcrystal grains are not preferentially oriented in a particular direction. The crystal grain size increases as the Cr film thickness increases, and an initial growth layer composed of crystal grains oriented in an irregular direction is formed. The thickness of this initial growth layer is about 50 to 70 nm, though it depends on the type and surface condition of the substrate, or the forming conditions such as the forming temperature and the pressure of the sputtering gas. Further, as the film thickness increases, Cr crystal grains in <110> or <100> orientation become dominant. The thickness of the Cr underlayer practically used is 100 nm to 200 nm. The crystal grain size of the Cr underlayer having this thickness is irregularly distributed in the range of 20 to 200 nm. A Co-based alloy thin film such as CoCr grows epitaxially on the Cr underlayer. On the Cr (100) plane, (112 of CoCr crystal is formed.
0) is parallel, that is, a thin film is formed in which the c-axis of the CoCr crystal is parallel to the surface of the underlayer and is orthogonal to each other, and the (1010) plane of the CoCr crystal is parallel to the Cr (110) plane. . The crystal grains of the Co-based alloy thin film such as CoCr are formed by epitaxial growth on the Cr underlayer crystal grains having a grain size of 20 to 200 nm, and the grain size is formed on one Cr crystal grain. A plurality of CoCr crystals of 10 to 50 nm grow. When a recording medium having such a structure is magnetized, a plurality of magnetic crystal grain groups formed on the Cr crystal grains act as if they were a single magnetic cluster. That is, several magnetic crystals formed on one Cr crystal having a grain size of 20 to 200 nm are magnetized as if they were a single magnetic cluster because of strong magnetic interaction between the magnetic grains. High density magnetic recording, especially 1
In Gb / in ² or higher ultra-high density magnetic recording, the bit length is expected to be reduced to the order of several tens of nanometers. In order to realize ultra-high density magnetic recording with good reproducibility,
When magnetized, each magnetic crystal grain is magnetically isolated so that it can act as a single magnetic cluster, and it is important to control the uniformity of the crystal grain size and the crystal orientation. For this purpose, it is necessary to highly control the grain size and crystal orientation of the Cr underlayer formed on the substrate. That is, in the conventionally used magnetic recording medium, the state of the substrate surface before the formation of the Cr underlayer is not specially controlled, so that the size and growth orientation of the Cr crystal grains formed on the substrate are not uniform. There is a problem that the fine structure such as the particle size and crystal orientation of the magnetic particles formed above cannot be controlled with good reproducibility.

[0005]

SUMMARY OF THE INVENTION An object of the present invention is to solve the above-mentioned drawbacks of the prior art by using a structure controlling thin film of a magnetic thin film made of an alloy containing Cr as a main component. By forming a magnetic thin film on top of the control thin film, the structure of a Co-based alloy magnetic thin film with a magnetically isolated proper grain size and crystal orientation can be controlled, and the magnetic properties such as high coercive force can be controlled. An object is to provide an in-plane magnetic recording medium suitable for high-density magnetic recording.

[0006]

In order to achieve the above object, in the present invention, a means for providing a nucleation control layer for promoting crystal nucleation of a thin film on a substrate, a body core containing Cr as a main component This has been solved by means of providing a structure controlling thin film of a magnetic thin film made of an alloy having a cubic lattice structure and means of epitaxially forming a magnetic thin film made of a Co-based alloy on the structure controlling thin film.

The present invention has been completed based on the following findings. That is, a dense hexagonal lattice structure (hc
The Co-based alloy having a p structure) has a large magnetocrystalline anisotropy in the c-axis direction, and the in-plane magnetic recording medium has the c-axis oriented in the plane of the substrate. In order to highly orient the c-axis of this Co-based alloy in the plane of the substrate, a Cr underlayer having a body-centered cubic lattice structure (hereinafter referred to as a bcc structure) is formed on the substrate, and a Co-based alloy thin film is formed on the Cr underlayer. It C of this Co-based alloy thin film
To align the axis in the plane, <100> or <110
> An oriented Cr underlayer is required. The growth of this Cr underlayer thin film is largely influenced by the surface condition of the substrate to which this thin film is attached. When the growth morphology of the Cr thin film formed on the substrate is examined by an electron microscope or the like, the initial growth stage of the Cr thin film shows that the initial growth layer is composed of aggregates of microcrystals oriented in irregular directions. C with growth direction in <110> or <100> direction with increasing
r crystal grains are formed. Therefore, the crystal grain size and crystal orientation of the Cr thin film change in the film thickness direction of the thin film. The thickness of the Cr underlayer that has been conventionally used practically (100 to 200
nm), the particle size is non-uniformly distributed in the range of 20 to 200 nm. As a method for controlling the crystal growth of the Cr underlayer thin film from the initial stage of thin film growth, C between the substrate and Cr underlayer
It is conceivable to provide a layer that controls the nucleation of r crystals. As a method for controlling the nucleation of Cr or a bcc structure thin film containing Cr as a main component, a single crystal or polycrystalline thin film such as a bcc structure, an hcp structure or an oxide material having a good lattice matching with Cr is used as a control layer. The method used as is generally adopted. By the way, a substrate for a magnetic recording medium is cleaned by various processes and then placed in a vacuum device, and a thin film is formed thereon. In this case, since the microscopic structure and surface state of the substrate surface are non-uniform, the crystal nucleation of the thin film formed thereon is also uneven. The present inventors
In order to uniformly generate the crystal nuclei of the r or Cr alloy thin film on the substrate surface, it is considered necessary to control the surface condition of the substrate inside the vacuum device after cleaning the substrate. A generation control layer was formed, a Cr or Cr alloy thin film was formed on the formation control layer, and the crystal growth state thereof was examined in detail by an electron microscope. The purpose of forming this thin nucleation control layer is
It is intended to realize a surface state of a base layer in which crystals of Cr or a Cr alloy having uniform grain size and crystal orientation are easily grown, and to reduce the initial growth layer in which the film structure changes with the film thickness. As a result of studying this thin nucleation control layer, S
It has been found that when a thin film made of a material containing i, Ge, C, B, etc. is formed on a substrate, the crystal grain size distribution and orientation of Cr or an alloy thin film containing Cr as a main component is improved. It was Si, Ge, C used as the nucleation layer,
When a thin film of a material containing B has an amorphous surface structure,
It was confirmed that it is effective for controlling uniform nucleation of Cr or Cr alloy thin film formed on this.

The above-mentioned Cr alloy thin film is formed on this C thin film.
It acts as a structure controlling thin film for controlling the crystal grain size and crystal orientation of the o-based magnetic thin film. Further, by using an alloy thin film containing Cr as a main component, the structure controlling thin film is
The grain size can be made smaller than that of a thin film of Cr alone,
Therefore, there is an advantage that the crystal grain size of the magnetic thin film formed thereon can be controlled to be small. As a magnetic thin film suitable for high density magnetic recording, it is desirable that the c-axis of the easy axis of magnetization is oriented parallel to the substrate surface and that magnetic particles are magnetically isolated. It is preferable that one magnetic crystal is formed on each crystal grain forming the structure controlling thin film. Further, as a medium for high density recording of 1 Gb / in ² or more, it is preferable that the magnetic thin film has a uniform particle size within a range of 10 to 50 nm and the magnetic particles are isolated. For this purpose, the crystal grain size of the alloy base thin film containing Cr as a main component, which acts as a structure controlling thin film of the magnetic film, is also 10
Uniformly distributed in the range of up to 50 nm, and <110
> Or <100> orientation. A thin film for controlling the structure of a magnetic film of various materials was formed on a substrate, and its structure was examined by an electron microscope and X-ray diffraction. As a result, Cr was the main component, and Hf, Ir, Mo, P
A material having a body-centered cubic lattice structure formed by adding at least one element selected from d, Pt, Re, Ta, Ti, and Zr has a smaller grain size than a material thin film of Cr alone. It has been found that a uniform thin film can be obtained. H above
f, Ir, Mo, Pd, Pt, Re, Ta, Ti, Zr
It is recognized that the additional elements such as Se tend to segregate at the grain boundaries of the Cr grains, and this acts effectively to promote the magnetic isolation of the magnetic thin film formed on the Cr grains by epitaxial growth. The amount of the additional element is preferably about 5 to 30 at% and can be arbitrarily selected depending on the forming conditions.

In order to realize ultra-high density magnetic recording of 1 Gb / in ² or more, the spacing between the recording medium surface and the magnetic head is set as small as several tens of nanometers, so that the surface of the magnetic film can be undulated. Only small, preferably 10n
m or less is good. For this purpose, the thickness of the nucleation control layer and the structure control layer of the magnetic film is preferably as thin as possible, preferably 5 nm or more and 100 nm or less. To obtain practically high reproducibility, 10 to 50 nm is desirable.

[0010]

The thin film for structure control made of an alloy containing Cr as a main component preferably has a body-centered cubic structure and is oriented in the <110> direction or the <100> direction. The (1010) plane or (11) of the base alloy magnetic thin film
It is preferable that the 20) plane is formed epitaxially.

As the magnetic thin film, a Co-based alloy thin film containing CoCr as a main component is used. Pt, Ta, Ni, Re, R
u, Mo, Hf, W or the like may be added and used, and the magnetic thin film may be a single layer of the above alloy thin film. Furthermore, the above magnetic thin films can be used by laminating in multiple layers,
As a result, the effect of improving the coercive force of the magnetic film or reducing the noise of the reproduced signal can be obtained.

As a method of forming a thin film on the magnetic recording medium of the present invention, a physical vapor deposition method such as a vacuum vapor deposition method, a high frequency sputtering method and an ion beam sputtering method can be used.

[0013]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of the present invention will be described below in detail with reference to the drawings. In the figure, components with the same reference numerals indicate parts having the same performance characteristics.

Example 1 As shown in FIG. 1, an in-plane magnetic recording medium in which a structure controlling thin film 2 of a magnetic film was formed on a glass substrate 1 and a Co-based magnetic film 3 was provided thereon was prepared as follows. It was produced by the procedure shown in.

The glass substrate 1 washed under the same conditions was placed in a sputtering apparatus and evacuated to a vacuum of 2 × 10 ^-7 Torr. Subsequently, the substrate is heated to 250 ° C. to a thickness of 15
A thin film 2 for controlling the structure of a 0 nm magnetic film was formed. A CoCrTa-based magnetic film 3 having a film thickness of 30 nm was subsequently formed thereon in the same vacuum, and a protective film 4 having a film thickness of 10 nm was formed thereon. The structure controlling thin film 2 is an alloy thin film whose main component is Cr, and contains 10 at% of Hf, Ir, Mo and P in Cr.
A thin film was formed by adding elements such as d, Pt, Re, Ta, Ti, and Zr and by comparison with Cr alone without adding other elements. The thin film was formed under a DC magnetron sputtering method with a sputtering Ar gas pressure of 10 mTorr. The magnetic film is Co-15a
A t% Cr-4at% Ta alloy was used.

The structure (crystal orientation, grain size) of the thin film was examined by an electron microscope observation method and an X-ray diffraction method, and the magnetic characteristics of the magnetic film were measured by a vibrating sample magnetization measuring device (VSM).
An example of the result is shown in comparison with Table 1.

[0017]

[Table 1]

Table 1 shows a magnetic cluster formed when the above magnetic film is magnetized in the in-plane direction (a crystal grain group formed by magnetically coupling adjacent magnetic particles when magnetized).
The results of observation and measurement of the diameter of the magnetic field with a magnetic force microscope and a spin polarization scanning electron microscope are also shown.

The above structure controlling thin film has a body-centered cubic structure, and the growth directions thereof are both <110> and <100> directions.

As shown in Table 1, when an alloy containing Cr as a main component is used as the structure controlling thin film of the magnetic film, the crystal grain size of the structure controlling thin film can be made smaller than that of the Cr alone thin film. When the structure controlling thin film 2 is composed of a thin film of Cr alone, a plurality of magnetic crystal grains are likely to be formed on the structure controlling thin film 2 with their boundaries in contact with each other. On the other hand, since the grain size of the structure control thin film 2 made of an alloy containing Cr as a main component is small, one magnetic crystal grain tends to be formed on the crystal grain of one structure control thin film. . As a result, it was confirmed that the diameter of magnetic clusters tended to be smaller when the medium was magnetized. This indicates that it is suitable for high density magnetic recording with a smaller recording bit length. Further, in the medium using the Cr alloy structure controlling thin film, the adjacent magnetic crystal grains are isolated from each other, the interaction is reduced, and the coercive force can be increased.

In order to investigate the further effect of the structure controlling thin film using an alloy containing Cr as a main component, a cross-section sample of the thin film was prepared and the result of observation by an electron microscope was compared with the thin film of Cr alone. Is schematically shown in. At the initial growth stage near the substrate interface, an initial growth layer 5 made of an aggregate of microcrystals oriented in an irregular direction is formed. In this region, the film thickness increases and the structure such as the crystal grain size and the growth orientation is increased. Changes are happening. Crystal grains grow as the film thickness increases, and crystal grains having a growth orientation in the <110> or <100> direction are predominantly formed. The thickness of the initial growth layer 5 is about 80 nm without any significant difference between the case of using Cr alone and the case of using the Cr alloy. However, it was confirmed that the grain size of the structure control thin film (a) using the Cr alloy was smaller than that of the structure control thin film (b) of Cr alone.

In order to further investigate the effect of the structure controlling thin film using an alloy containing Cr as a main component, an example of the result of a transmission electron microscope examination of the planar structure of the structure controlling thin film is shown in FIG. . When a thin film is formed by the sputtering method or the vacuum deposition method, the thin film is formed in a non-equilibrium state.
Excessive additive elements tend to precipitate outside the crystal grains. From the change in contrast of the transmission electron microscope image and the composition analysis by the fine electron beam probe, it was considered that the Cr alloy structure controlling thin film had the Cr excess region 6 and the additive element excess region 7. The thickness of the additional element excess region 7 is about 0.5 nm to 2 nm, and this thickness can be controlled by the type of the additional element, the addition amount and the thin film forming conditions.

(Embodiment 2) When a thin film is formed on a substrate by a vacuum vapor deposition method or a sputtering method, as described in (Embodiment 1), an initial growth layer whose grain size and crystal orientation change with film thickness is formed. To be done. In high-density longitudinal magnetic recording, it is expected that the spacing between the medium surface and the magnetic head will be reduced to 50 nm or less. For this purpose, the undulation of the medium surface is required to be reduced to 10 nm or less. . For this purpose, it is desirable that the thickness of the thin film, especially the thickness of the control layer, be as thin as possible. In order to reduce the influence of the demagnetizing field during recording, the coercive force of the medium is as large as possible, preferably 2000 Oe or more, and the magnetic crystal grain size is 50 nm or less, which are magnetically isolated from each other. Is desirable. To meet these requirements, it is preferable to make the initial growth layer of the structure controlling thin film small. For this reason, the present invention has devised to use a nucleation control layer for promoting the formation of crystal nuclei when forming a structure controlling thin film. As shown in FIG. 4, a nucleation control layer 8 made of a Si thin film having a thickness of 10 nm is formed on the cleaned substrate 1 (as the nucleation control layer, Si, Ge, C, B are used.
The same effect can be obtained by using, but here, Si will be described as an example). The Si thin film may be either a polycrystalline film or an oxide film, but an amorphous state is preferable in order to improve the flatness of the thin film and the effect of promoting the free nucleation of the thin film formed thereon. In the same vacuum, a structure controlling thin film 2 having a film thickness of 50 nm was formed thereon. As the structure control thin film 2,
Hf, Ir, Mo, Pd, P described in (Example 1)
Needless to say, the same effect can be obtained by using any Cr alloy thin film to which an element such as t, Re, Ta, Ti, or Zr is added. Here, as an example, a structure control thin film containing Cr as a main component and 8 at% of Ti added thereto will be described. For comparison, a sample was prepared in which the structure control thin film 2 made of Cr and Cr-8 at% Ti was formed in a thickness of 50 nm directly on the substrate without providing the nucleation control layer 8. In each of the above samples, a CoCrPt-based magnetic film 3 having a thickness of 20 nm was formed in the same vacuum, and a protective layer 4 having a thickness of 10 nm was further formed. An example of performance comparison of these samples is shown in Table 2.

[0024]

[Table 2]

The performance effect of the nucleation control layer and the structure controlling thin film shown in Table 2 is that the nucleation control layer is not limited to Si in addition to G.
e, C, B, Hf, I in addition to Ti as a structure control thin film
Almost the same characteristics can be obtained even when elements such as r, Mo, Pd, Pt, Re, Ta and Zr are added to Cr, and the amount of the added element can be changed in the range of 2 to 30 at%.
The isolation condition between particles can be controlled by the addition amount, and the isolation tends to be promoted as the addition amount increases. It was confirmed by X-ray diffraction that all the structure control thin films had a body-centered cubic structure.

As is clear from the above comparison, by using an alloy material containing Cr as a main component for the structure control thin film of the magnetic film, the performance of magnetic properties such as crystal orientation, grain size and coercive force of the magnetic film is improved. Can be promoted. Furthermore, by providing a nucleation control layer on the substrate, a magnetic film with a good in-plane orientation can be produced even with a thin structure control thin film, and high coercive force and small magnetic clusters can be formed. A medium suitable for can be produced.

In order to examine the effect of the nucleation control layer, a cross-section sample of a thin film was prepared and observed by an electron microscope. The results are schematically shown in FIG. As shown in the figure, the structure control thin film formed on the nucleation control layer achieves crystal growth with a uniform grain size from the initial growth stage, and the initial growth layer where the thin film structure changes is small. It has been confirmed that

(Embodiment 3) FIG. 6 is a diagram for explaining another application example of the present invention. Ge with a thickness of 10 nm is formed on the substrate 1.
A nucleation control layer 8 composed of a thin film is formed, and Cr-
Structure control thin film 2 made of 8 at% Ta and having a film thickness of 50 nm
Formed. Further, in the same vacuum, a CoCrPtSi magnetic layer 9 and a CoCrTa magnetic layer 10 of 10 nm each were laminated to form a two-layer structure magnetic film, and a C protective layer 4 of 10 nm was deposited thereon. According to the structural analysis by X-ray diffraction, when the thin film formation temperature is 200 ° C or lower,
Regarding the crystal orientation of the structure controlling thin film 2, the <110> orientation was mainly detected, and at 200 ° C. to 400 ° C., crystal growth in the <100> orientation was mainly detected. The magnetic film formed on this has a large magnetic anisotropy in the in-plane direction, and the c-axis of the easy axis of magnetization is substantially parallel to the substrate surface. For comparison, a sample was prepared in which a Cr underlayer having a film thickness of 50 nm was formed on the substrate 1, and a magnetic film and a protective layer similar to the above were formed on the Cr underlayer. As a result, the medium provided with the nucleation control layer according to the present invention and the structure control thin film made of a Cr alloy was 2000 to 2500 O.
A medium having a high coercive force (e) and not using a structure control thin film composed of a nucleation control layer and a Cr alloy (1500-1700).
It has been revealed that it is possible to exert excellent magnetic characteristics as compared with Oe). Further, it was confirmed that by stacking magnetic films having different compositions, the coercive force can be improved by about 20% as compared with the case where a single magnetic film is used.

In this embodiment, CoCrPt is used as the magnetic film.
Although description has been made using Si and CoCrTa-based thin films, similar effects can be obtained with Cr, V, Mo, W, Ru, Re, Ta, P.
It goes without saying that a Co-based alloy in-plane magnetic recording medium containing at least one element selected from t, Ni, and Hf can also be obtained.

[0030]

As described in detail above, according to the in-plane magnetic recording medium of the present invention, prior to forming the Co-based alloy magnetic film, Hf, Ir, Mo, Pd, Pt,
Providing a structure control thin film of a magnetic film made of a Cr alloy to which at least one element of Re, Ta, Ti and Zr is added,
Furthermore, between the substrate and the structure controlling thin film, Si, Ge,
By providing a nucleation control layer composed of an amorphous thin film composed of one or more elements selected from C and B, the crystal grain size of the Co-based alloy magnetic thin film formed thereon is provided. And the controllability of in-plane orientation are improved, and as a ripple effect thereof, magnetically isolated magnetic films having an appropriate grain size are obtained, and the diameter of magnetic clusters formed when this thin film is magnetized can be reduced, Further, there is an effect that an in-plane magnetic recording medium excellent in magnetic properties such as high coercive force and suitable for ultra-high density magnetic recording can be provided, and its industrial utility value is extremely large.

[Brief description of drawings]

FIG. 1 is a diagram illustrating a basic configuration of an in-plane magnetic recording medium of the present invention.

FIG. 2 is a diagram illustrating a cross-sectional structure of a thin film for controlling the structure of a magnetic film ((a) a schematic view of the cross-sectional structure of a thin film for controlling a Cr alloy structure of the present invention, (b) a conventional thin film using a Cr thin film Schematic diagram of the cross-sectional structure of the structure control thin film).

FIG. 3 is a diagram illustrating a composition distribution structure of a Cr alloy structure control thin film.

FIG. 4 is a diagram illustrating a configuration of a medium using the nucleation control layer of the present invention.

FIG. 5 is a diagram illustrating a cross-sectional structure of a thin film using a nucleation control layer.

FIG. 6 is a diagram illustrating an application example of the present invention to an in-plane recording medium having a two-layer magnetic film structure.

[Explanation of symbols]

1 ... Substrate, 2 ... Structural control thin film, 3 ... Magnetic film, 4 ... Protective film, 5 ... Initial growth layer, 6 ... Cr excess region, 7 ... Additive element excess region, 8 ... Nucleation control layer, 9 ... CoCrPtSi Magnetic film, 10 ... CoCrTa magnetic film.

Front page continuation (72) Inventor Yoshifumi Matsuda 1-280, Higashi Koigakubo, Kokubunji, Tokyo Inside Central Research Laboratory, Hitachi, Ltd. (72) Inventor Masaaki Nihon 1-280, Higashi Koigakubo, Kokubunji, Tokyo Hitachi Central Research Co., Ltd. In-house

Claims (8)

[Claims] 1. A surface characterized in that a structure controlling thin film of a magnetic thin film made of an alloy containing Cr as a main component is formed on a predetermined substrate, and the magnetic thin film is formed on the structure controlling thin film. Internal magnetic recording medium. 2. The structure controlling thin film of the magnetic thin film contains Cr as a main component, and Hf, Ir, Mo, Pd, Pt, R
The in-plane magnetic recording medium according to claim 1, having a body-centered cubic lattice structure formed by adding at least one element selected from e, Ta, Ti, and Zr. 3. The structure controlling thin film of the magnetic thin film contains Cr as a main component, and contains 2 to 30 at% of Hf, Ir, Mo,
2. The in-plane magnetism according to claim 1, which has a body-centered cubic lattice structure formed by adding at least one element selected from Pd, Pt, Re, Ta, Ti, and Zr. recoding media. 4. The nucleation control layer is formed on a predetermined substrate, and the structure controlling thin film and the magnetic thin film are sequentially formed on the nucleation controlling layer. In-plane magnetic recording medium. 5. The longitudinal magnetic recording medium according to claim 4, wherein the nucleation control layer is made of an amorphous thin film. 6. The nucleation control layer comprises Si, Ge, C, B,
The in-plane magnetic recording medium according to claim 4 or 5, wherein the in-plane magnetic recording medium comprises an amorphous thin film made of one or more elements selected from the above. 7. The longitudinal magnetic recording medium according to claim 1, wherein the structure controlling thin film of the magnetic thin film and the nucleation controlling layer have a thickness of 5 to 100 nm. 8. The magnetic thin film contains Co as a main component, and Cr, V, Mo, W, Ru, Re, Ta, Pt, Ni,
The in-plane magnetic recording medium according to any one of claims 1 to 7, comprising at least one element selected from Hf.