JPH07249388A - Gastight seal structure and manufacture thereof - Google Patents
Gastight seal structure and manufacture thereofInfo
- Publication number
- JPH07249388A JPH07249388A JP4096094A JP4096094A JPH07249388A JP H07249388 A JPH07249388 A JP H07249388A JP 4096094 A JP4096094 A JP 4096094A JP 4096094 A JP4096094 A JP 4096094A JP H07249388 A JPH07249388 A JP H07249388A
- Authority
- JP
- Japan
- Prior art keywords
- container
- sealing
- volume
- sealing layer
- substrates
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Manufacture Of Electron Tubes, Discharge Lamp Vessels, Lead-In Wires, And The Like (AREA)
- Vessels, Lead-In Wires, Accessory Apparatuses For Cathode-Ray Tubes (AREA)
- Cathode-Ray Tubes And Fluorescent Screens For Display (AREA)
Abstract
Description
【0001】[0001]
【産業上の利用分野】本発明は、気密封止構造体及びそ
の製造方法に関し、より詳細には、真空管及びガス封入
管の封止技術、特に、微小容積のものの封止技術を用い
た気密封止構造体及びその製造方法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a hermetically sealed structure and a method for manufacturing the same, and more particularly, to a vacuum tube and a gas sealing tube sealing technology, in particular, a sealing technology using a micro volume. The present invention relates to a tightly sealed structure and a method for manufacturing the same.
【0002】[0002]
【従来の技術】近年、集積回路又は薄膜の分野において
用いられている微細加工技術により、高電界において電
子を放出する電界放出型の微小電子源が開発され、マイ
クロ波増幅素子,変位センサ,平面型ディスプレイ等へ
の応用が検討されている。特に、平面型ディスプレイへ
の応用は、フランスレティ(LETI)のマイヤー(M
ayer)らによるバキュームマイクロエレクトロニクス国
際会議91(IVMC91)に発表された研究報告によ
り知られている。(「RECENT DEVELOPMENTON “MICROTIP
S" DISPLAY AT LETI」(R.Meyer, Technical Digest of
IVMC 91,Nagahama 1991, pp.6〜9))。2. Description of the Related Art In recent years, a field emission type micro electron source that emits electrons in a high electric field has been developed by a microfabrication technique used in the field of integrated circuits or thin films. Application to portable displays is under consideration. Especially, the application to the flat panel display is performed by Meyer (M) of France Leti (LETI).
ayer) et al., and is known by the research report published in International Conference on Vacuum Microelectronics 91 (IVMC91). (`` RECENT DEVELOPMENTON “MICROTIP
S "DISPLAY AT LETI" (R. Meyer, Technical Digest of
IVMC 91, Nagahama 1991, pp.6-9)).
【0003】図5及び図6は、従来の平面型ディスプレ
イの構成図で、図5は斜視図、図6は拡大断面斜視図で
ある。図中、11は蛍光体側の基板、12は電子源側の
基板、13は透明電極、14は蛍光体、15はエミッタ
電極、16は絶縁層、17はゲート電極、18は微小エ
ミッタである。透明電極13と蛍光体14が形成されて
いる蛍光体側の基板11と、絶縁層16を挟んでエミッ
タ電極15とゲート電極17によるマトリクスを構成し
ている電子源側の基板12を対向して配置した構造にな
っており、電子源側の基板12のマトリクスの交点部A
には、その拡大断面斜視図である図6に示すように、円
錐形状の微小エミッタ18が形成されている。該微小エ
ミッタ18から電界により電子を放出させ、この電子を
電界により加速し、蛍光体14に衝突させて、該蛍光体
14を発光させることにより表示を行う。5 and 6 are configuration diagrams of a conventional flat display, FIG. 5 is a perspective view, and FIG. 6 is an enlarged sectional perspective view. In the figure, 11 is a phosphor side substrate, 12 is an electron source side substrate, 13 is a transparent electrode, 14 is a phosphor, 15 is an emitter electrode, 16 is an insulating layer, 17 is a gate electrode, and 18 is a minute emitter. The phosphor-side substrate 11 on which the transparent electrode 13 and the phosphor 14 are formed and the electron-source-side substrate 12 forming a matrix of the emitter electrode 15 and the gate electrode 17 with the insulating layer 16 in between are arranged to face each other. The structure is such that the intersection point A of the matrix of the substrate 12 on the electron source side is
As shown in FIG. 6 which is an enlarged cross-sectional perspective view of the same, a minute emitter 18 having a conical shape is formed. An electron is emitted from the minute emitter 18 by an electric field, the electron is accelerated by the electric field, collides with the phosphor 14, and the phosphor 14 is caused to emit light to perform display.
【0004】図7は、従来の平面型ディスプレイの断面
図で、図中、21は封止部分、22はスペーサ、23は
パイプで、その他、図5と同じ作用をする部分は同一の
符号を付してある。スペーサ22を介して対向して配置
した蛍光体側の基板11と、電子源側の基板12及び封
止部分21により真空容器を構成している。この電子源
側の基板12には、排気のためのパイプ23が取付けら
れており、該パイプ23を用いて真空容器を排気した後
に封止される。FIG. 7 is a cross-sectional view of a conventional flat display, in which 21 is a sealing portion, 22 is a spacer, 23 is a pipe, and other portions having the same functions as those in FIG. It is attached. A vacuum container is constituted by the substrate 11 on the phosphor side, which is arranged to face each other via the spacer 22, the substrate 12 on the electron source side, and the sealing portion 21. A pipe 23 for exhausting gas is attached to the substrate 12 on the electron source side, and the vacuum container is exhausted using the pipe 23 and then sealed.
【0005】[0005]
【発明が解決しようとする課題】電界放出型の微小冷陰
極を用いた素子は、安定に動作させるために超高真空を
保持することが肝要であり、好ましくは10-9Torr以下
にガス圧を保持する必要がある。また、これらの電界放
出型の微小冷陰極を用いた素子は、従来の真空管に較べ
て非常に小型化できるというメリットがある。しかし、
この場合、真空を保持するための容器の内容積が非常に
小さいというデメリットがあり、この真空容器の内容積
が小さいということのために、従来の真空管と同じレベ
ルの比較的小量のリークが生じても、真空容器内のガス
圧がかなり上がってしまい、素子の寿命を短くしてしま
うという問題点があった。An element using a field emission type micro cold cathode is required to maintain an ultrahigh vacuum in order to operate stably, and the gas pressure is preferably 10 -9 Torr or less. Need to hold. Further, the element using these field emission type micro cold cathodes has an advantage that it can be made much smaller than the conventional vacuum tube. But,
In this case, there is a demerit that the inner volume of the container for holding the vacuum is very small, and due to the small inner volume of this vacuum container, a relatively small amount of leak at the same level as a conventional vacuum tube is generated. Even if it occurs, there is a problem that the gas pressure in the vacuum container rises considerably and the life of the element is shortened.
【0006】本発明は、このような実情に鑑みてなされ
たもので、平面型ディスプレイの気密封止において、対
向させて配置した基板間に設ける封止部分を多重にし、
その多重の封止部分の間の基板に溝をつけることによ
り、多重の封止部分の間の内容積を増やし、容器内を長
時間高真空に保つようにした気密封止構造体及びその製
造方法を提供することを目的としている。The present invention has been made in view of the above circumstances, and in the hermetic sealing of a flat panel display, multiple sealing parts are provided between substrates arranged to face each other,
By forming a groove in the substrate between the multiple sealed portions, the internal volume between the multiple sealed portions is increased, and the inside of the container is kept in a high vacuum for a long time. It is intended to provide a way.
【0007】[0007]
【課題を解決するための手段】本発明は、上記目的を達
成するために、(1)気密容器と気密に保つための封止
手段を設けてある第一の気密容器の外側に、該第一の気
密容器を取り囲むように第二の気密容器と気密に保つた
めの封止手段とを設け、前記第一の気密容器と前記第二
の気密容器との間に、第二の気密容器の封止部分から侵
入した気体によるガス圧を低くするための容積を設けた
こと、更には、(2)前記第一の気密容器と前記第二の
気密容器が、同一容器により形成されていること、更に
は、(3)前記(2)において、二枚の平板形状の基板
を対向させて配置し、前記基板間に多重の封止層を設
け、第一の封止層と第二の封止層との間の部分の二枚の
基板の少なくともどちらか一方の基板の内側に溝をつけ
た形状にすることにより、第一の封止層と第二の封止層
との間に容積を形成したこと、更には、(4)前記
(1)において、前記第一の気密容器と前記第二の気密
容器との間にゲッターを形成したこと、或いは、(5)
二枚の平板形状の基板を対向させて配置し、前記基板間
に多重の封止層を設け、第一の封止層と第二の封止層と
の間の部分の二枚の基板の少なくともどちらか一方の基
板の内側に溝をつけた形状にすることにより、第一の封
止層と第二の封止層との間に容積を形成する気密封止構
造体の製造方法であって、二枚の平行平板の少なくとも
一方に封止のための少なくとも二重にして接着層を形成
する工程と、必要としている気密容器内の雰囲気と同様
の雰囲気中において、二枚の平行平板を前記接着層を介
して接着する工程とを含むことを特徴としたものであ
る。In order to achieve the above object, the present invention provides: (1) an airtight container and a first airtight container provided with a sealing means for keeping airtightness, A second airtight container is provided so as to surround the one airtight container and a sealing means for keeping airtightness is provided, and between the first airtight container and the second airtight container, a second airtight container A volume is provided to reduce the gas pressure due to the gas that has entered from the sealed portion, and (2) the first hermetic container and the second hermetic container are formed of the same container. Further, (3) in the above (2), two flat plate-shaped substrates are arranged to face each other, a multiple sealing layer is provided between the substrates, and a first sealing layer and a second sealing layer are provided. To form a groove on the inside of at least one of the two substrates in the part between the stop layer and A volume is formed between the first sealing layer and the second sealing layer, and further, (4) in the above (1), the first hermetic container and the second hermetic container. Forming a getter between and, or (5)
Two flat plate-shaped substrates are arranged to face each other, multiple sealing layers are provided between the substrates, and the two substrates in the portion between the first sealing layer and the second sealing layer are provided. A method for manufacturing an airtight sealing structure, which comprises forming a volume between a first sealing layer and a second sealing layer by forming a groove inside at least one of the substrates. Then, in at least one of the two parallel flat plates, at least two layers for sealing are formed to form an adhesive layer, and the two parallel flat plates are placed in an atmosphere similar to the required atmosphere in the airtight container. And a step of adhering via the adhesive layer.
【0008】[0008]
【作用】本発明によれば、真空容器の容積が非常に小さ
い電界放出型の微小冷陰極を用いた素子において、封止
部分を多重にし、それぞれの封止部分間に容積を設けて
いる。この構造では、まず第一段階として、真空容器の
外側の封止層を通して内側の封止層との間の容積部分に
大気からガスがリークして侵入する。さらに第二段階と
して、真空容器の内側の封止層を通して真空容器内にガ
スがリークして侵入するが、このときのリーク量は、真
空容器の外側に封止層と内側の封止層との間の容積部分
と真空容器内との圧力差に比例し、さらに真空容器の外
側の封止層と内側の封止層との間の容積部分が、この部
分へのリークにより侵入したガスの圧力を低く保つため
のバッファーとして機能するために、第一段階のリーク
量に較べて非常に低くなる。このために、封止部分が一
箇所の従来例に較べて、長期にわたり真空容器内を超高
真空に保持することが可能になり、素子寿命を長期化す
ることができる。According to the present invention, in the element using the field emission type micro cold cathode having a very small volume of the vacuum container, the sealing portions are multiplexed and the volumes are provided between the respective sealing portions. In this structure, as the first step, gas leaks from the atmosphere and invades into a volume portion between the inner sealing layer and the outer sealing layer of the vacuum container. Further, as a second step, gas leaks into the vacuum container through the sealing layer inside the vacuum container and invades, but at this time, the amount of leakage is the sealing layer on the outside of the vacuum container and the sealing layer on the inside. Is proportional to the pressure difference between the volume of the vacuum vessel and the inside of the vacuum vessel, and the volume of the volume between the outer sealing layer and the inner sealing layer of the vacuum vessel is the It acts as a buffer to keep the pressure low, so it is very low compared to the first stage leak rate. For this reason, it becomes possible to maintain the inside of the vacuum container at an ultrahigh vacuum for a long period of time, as compared with the conventional example in which the sealing portion is one, and the life of the element can be extended.
【0009】[0009]
【実施例】実施例について、図面を参照して以下に説明
する。図1は、本発明による気密封止構造体の一実施例
を説明するための構成図で、電界放出型の微小冷陰極を
用いた平面型ディスプレイの断面図である。図中、1は
蛍光体側の基板、2は電子源側の基板、3,3aは封止
部分、4はスペーサ、5は溝である。Embodiments will be described below with reference to the drawings. FIG. 1 is a configuration diagram for explaining an embodiment of a hermetically sealed structure according to the present invention, and is a cross-sectional view of a flat panel display using a field emission type micro cold cathode. In the figure, 1 is a phosphor side substrate, 2 is an electron source side substrate, 3 and 3a are sealing parts, 4 is a spacer, and 5 is a groove.
【0010】スペーサ4を介して対向して配置した蛍光
体側の基板1と、電子源側の基板2及び両基板間の封止
部分3,3aから構成され、蛍光体側の基板1の封止部
分3,3aの間の部分には、封止部分3,3aの間の容
積を大きくするための溝5が形成されている。すなわ
ち、蛍光体側の基板1と、電子放出源側の基板2との間
の封止部分を、内側の封止部分3と外側の封止部分3a
の二重にし、さらに蛍光体側の基板1の内側に溝5をつ
けた形状にすることにより、二重の封止部分の間に容積
を形成する。The phosphor-side substrate 1 and the electron-source-side substrate 2 and the sealing portions 3 and 3a between the two substrates, which are arranged to face each other with a spacer 4 interposed therebetween, and the phosphor-side substrate 1 is sealed. A groove 5 for increasing the volume between the sealing portions 3 and 3a is formed in the portion between 3 and 3a. That is, the sealing portion between the substrate 1 on the phosphor side and the substrate 2 on the electron emission source side is the inner sealing portion 3 and the outer sealing portion 3a.
And a groove 5 is formed inside the substrate 1 on the phosphor side, thereby forming a volume between the double sealed portions.
【0011】図2は、図1における蛍光体側の基板の上
面図で、図中の参照番号は図1と同じである。蛍光体側
の基板1は、厚さ1mmの7059ガラス(コーニング)
基板であり、表示部の外側部分に幅3mm、長さ60mm、
深さ0.5mmの大きさの溝5が二箇所形成されている。
前記基板1上に透明電極として厚さ0.1μmのITO
(インジウム・スズ酸化物)をスパッタリングにより形
成し、該透明電極上に蛍光層として厚さ1μmのZnO:
Znを電子ビーム蒸着により形成する。FIG. 2 is a top view of the substrate on the phosphor side in FIG. 1, and the reference numerals in the figure are the same as those in FIG. The substrate 1 on the phosphor side is 7059 glass with a thickness of 1 mm (Corning)
It is a substrate and has a width of 3 mm and a length of 60 mm on the outside of the display.
Two grooves 5 each having a depth of 0.5 mm are formed.
ITO having a thickness of 0.1 μm as a transparent electrode on the substrate 1
(Indium tin oxide) is formed by sputtering, and ZnO having a thickness of 1 μm is formed as a fluorescent layer on the transparent electrode:
Zn is formed by electron beam evaporation.
【0012】図3は、図1における蛍光体側の基板上の
周辺部の構成図で、図中の参照番号は図1と同じであ
る。溝5の内側に一方の封止部分3を設け、前記溝5の
外側に他方の封止部分3aが設けられ、前記両方の封止
部分3,3aは、蛍光体側の基板1上で気密空間を形成
するようにループ状にめぐらされている。真空封止を行
うための封止部分(フリット層)3,3aを、フリット
ガラスペーストをスクリーン印刷により塗布した後、1
20℃による乾燥と450℃による仮焼成を行うことに
より、厚さ120〜150μmに形成する。FIG. 3 is a configuration diagram of the peripheral portion on the phosphor side substrate in FIG. 1, and the reference numerals in the figure are the same as those in FIG. One sealing portion 3 is provided inside the groove 5, and the other sealing portion 3a is provided outside the groove 5, and both sealing portions 3 and 3a are airtight spaces on the substrate 1 on the phosphor side. Are looped around to form a. After applying the frit glass paste by screen printing to the sealing portions (frit layers) 3 and 3a for vacuum sealing, 1
By drying at 20 ° C. and calcination at 450 ° C., a thickness of 120 to 150 μm is formed.
【0013】図1中の電子源側の基板2は、従来例の図
5に示す電子源側の基板12と同様の構成を用いたの
で、以下、図5を用いて説明する。厚さ1mmの7059
ガラス(コーニング)基板12上にそれぞれMoからな
る膜厚0.4μm、幅0.2mmのゲート電極17とエミッ
タ電極15が互いに直交するように配線されており、そ
の各交点にそれぞれMoからなる微小エミッタが約10000
個形成されている。この電子源側の基板2上に形成した
マトリクス状電子源の大きさは60.8mm×83.6mmで
あり、ゲート電極17とエミッタ電極15のピッチはそ
れぞれ0.38mmであり、ゲート電極17とエミッタ電
極15の本数はそれぞれ120本と160本である。Since the substrate 2 on the electron source side in FIG. 1 has the same structure as the substrate 12 on the electron source side shown in FIG. 5 of the conventional example, it will be described below with reference to FIG. 7059 with a thickness of 1 mm
A gate electrode 17 and an emitter electrode 15 each made of Mo and having a thickness of 0.4 μm and a width of 0.2 mm are wired on the glass (Corning) substrate 12 so as to be orthogonal to each other, and the intersections of the gate electrodes 17 and the emitter electrodes 15 are minutely made of Mo. The emitter is about 10000
Individually formed. The size of the matrix electron source formed on the substrate 2 on the electron source side is 60.8 mm × 83.6 mm, the pitch between the gate electrode 17 and the emitter electrode 15 is 0.38 mm, and The number of emitter electrodes 15 is 120 and 160, respectively.
【0014】次に、100μm径のガラスボール状のス
ペーサを散布した状態の電子源側の基板2と、蛍光体側
の基板1を真空チャンバー内にセットし、10-7Torr以
下に排気した後、デガスのため300℃まで両基板を加
熱して、約24時間保持する。その後、両基板を重ね、
約0.1N/cm2の圧力を加えながら500℃まで加熱
し、30分間保持した後、3℃/min以下のレートで室
温まで温度を下げて封着を行う。このように作製した電
界放出型の微小冷陰極を用いた平面型ディスプレイは、
同様に作製した封止部分が一箇所のものに較べて長期間
の安定動作が確認できた。Next, the substrate 2 on the electron source side and the substrate 1 on the phosphor side in a state in which glass ball-shaped spacers having a diameter of 100 μm are scattered are set in a vacuum chamber, and after evacuating to 10 −7 Torr or less, Both substrates are heated to 300 ° C. for degassing and kept for about 24 hours. After that, stack both substrates,
It is heated to 500 ° C. while applying a pressure of about 0.1 N / cm 2 and held for 30 minutes, and then the temperature is lowered to room temperature at a rate of 3 ° C./min or less to perform sealing. The flat-panel display using the field emission type micro cold cathode thus manufactured is
It was confirmed that a stable operation for a long period of time was confirmed as compared with the case where the sealing part produced in the same manner was one.
【0015】図4は、本発明による気密封止構造体の他
の実施例を示す図で、電界放出型の微小冷陰極を用いた
平面型ディスプレイの他の断面図である。図中、6はゲ
ッターで、その他、図1と同じ作用をする部分は同一の
符号を付してある。スペーサ4を介して対向して配置し
た蛍光体側の基板1と、電子源側の基板2及び両基板間
の封止部分3,3aから構成され、蛍光体側の基板1の
封止部分3,3aの間の部分には、該封止部分3,3a
の間の容積を大きくするための溝5が形成されている。
さらに、該溝5の表面にはゲッター6が形成されてい
る。FIG. 4 is a view showing another embodiment of the hermetically sealed structure according to the present invention, which is another cross-sectional view of a flat panel display using a field emission type micro cold cathode. In the figure, reference numeral 6 is a getter, and other parts having the same functions as those in FIG. 1 are designated by the same reference numerals. The phosphor-side substrate 1 and the electron-source-side substrate 2 and the sealing portions 3 and 3a between the two substrates, which are arranged to face each other with the spacer 4 interposed therebetween, and the phosphor-side substrate 1 has the sealing portions 3 and 3a. The sealing portion 3, 3a
A groove 5 is formed to increase the volume between them.
Further, a getter 6 is formed on the surface of the groove 5.
【0016】図1に示す実施例との相違点は、溝5の表
面にゲッター6が形成されていることである。該ゲッタ
ー6は、蛍光体側の基板1上にフリット層3,3aを形
成した後に、溝5の表面にスパッタリングにより金属ゲ
ッターの薄膜を形成しておき、電子源側の基板2と蛍光
体側の基板1を封着した後、レーザ加熱により再蒸発さ
せて活性化することにより形成する。The difference from the embodiment shown in FIG. 1 is that a getter 6 is formed on the surface of the groove 5. In the getter 6, after forming the frit layers 3 and 3a on the substrate 1 on the phosphor side, a thin film of a metal getter is formed on the surface of the groove 5 by sputtering, and the substrate 2 on the electron source side and the substrate on the phosphor side are formed. 1 is sealed and then re-evaporated by laser heating to be activated and formed.
【0017】本発明は、金属ゲッターの材料により制限
されるものではないが、本実施例では、この金属ゲッタ
ーの材料にMgを5wt%添加したAl(アルミニウム)
を用いた。また、電子源側の基板2の封止部分3,3a
の間の部分の表面には、ゲッター6による電極ライン間
のショートを防ぐために、SiO2の絶縁層を形成してお
く。Although the present invention is not limited by the material of the metal getter, in the present embodiment, Al (aluminum) obtained by adding 5 wt% of Mg to the material of the metal getter is used.
Was used. In addition, the sealing portions 3, 3a of the substrate 2 on the electron source side
An insulating layer of SiO 2 is formed on the surface of the portion between the electrodes to prevent a short circuit between the electrode lines due to the getter 6.
【0018】本実施例では、金属薄膜をレーザ加熱によ
り再蒸発させて活性化させてゲッターを形成している
が、再蒸発させる方法は、レーザ加熱に限られたもので
はなく、高周波加熱や抵抗加熱により再蒸発させてもよ
い。また、Zr−Al,Zr−V−Fe等のZr合金か
らなる非蒸発性のゲッター材料を再蒸発させずに用いて
もよい。このように作製した電界放出型の微小冷陰極を
用いた平面型ディスプレイは、図1に示した実施例と同
様に、封止部分が一箇所のものに較べて長期間の安定動
作が確認できた。In the present embodiment, the metal thin film is re-evaporated by laser heating and activated to form the getter. However, the method of re-evaporating is not limited to laser heating, and high frequency heating or resistance is used. It may be re-evaporated by heating. Further, a non-evaporable getter material made of a Zr alloy such as Zr-Al or Zr-V-Fe may be used without re-evaporation. The flat panel display using the field emission type micro cold cathode thus manufactured can be confirmed to have stable operation for a long period of time as compared with the case where the sealing portion is one, as in the embodiment shown in FIG. It was
【0019】[0019]
【発明の効果】以上の説明から明らかなように、本発明
によれば、真空容器の容積が非常に小さい電界放出型の
微小冷陰極を用いた素子において、封止部分を多重に
し、それぞれの封止部分間に容積を設けることによっ
て、長期にわたり真空容器内を超高真空に保持すること
が可能になり、長期にわたり安定動作可能な素子を提供
できる。また、封止部分を多重にすることにより、歩留
まりも向上する。As is apparent from the above description, according to the present invention, in an element using a field emission type micro cold cathode having a very small volume of the vacuum container, the sealing portion is multiplexed and By providing the volume between the sealed portions, it is possible to maintain the inside of the vacuum container at an ultrahigh vacuum for a long period of time, and it is possible to provide an element that can stably operate for a long period of time. Moreover, the yield is improved by multiplexing the sealing portions.
【図1】本発明による気密封止構造体の一実施例を説明
するための構成図である。FIG. 1 is a configuration diagram for explaining an embodiment of a hermetically sealed structure according to the present invention.
【図2】図1における蛍光体側の基板の上面図である。FIG. 2 is a top view of a phosphor-side substrate in FIG.
【図3】図1における蛍光体側の基板上の周辺部の構成
図である。FIG. 3 is a configuration diagram of a peripheral portion on a phosphor side substrate in FIG.
【図4】本発明による気密封止構造体の他の実施例を示
す図である。FIG. 4 is a view showing another embodiment of the hermetically sealed structure according to the present invention.
【図5】従来の平面型ディスプレイの斜視図である。FIG. 5 is a perspective view of a conventional flat display.
【図6】従来の平面型ディスプレイの拡大断面斜視図で
ある。FIG. 6 is an enlarged sectional perspective view of a conventional flat display.
【図7】従来の平面型ディスプレイの断面図である。FIG. 7 is a cross-sectional view of a conventional flat display.
1…蛍光体側の基板、2…電子源側の基板、3,3a…
封止部分、4…スペーサ、5…溝、6…ゲッター。1 ... Phosphor side substrate, 2 ... Electron source side substrate, 3, 3a ...
Sealing part, 4 ... Spacer, 5 ... Groove, 6 ... Getter.
Claims (5)
設けてある第一の気密容器の外側に、該第一の気密容器
を取り囲むように第二の気密容器と気密に保つための封
止手段とを設け、前記第一の気密容器と前記第二の気密
容器との間に、第二の気密容器の封止部分から侵入した
気体によるガス圧を低くするための容積を設けたことを
特徴とする気密封止構造体。1. An airtight container and a first airtight container provided with a sealing means for keeping the airtightness, the first airtight container being surrounded by the second airtight container so as to keep the airtightness. A sealing means is provided, and a volume is provided between the first airtight container and the second airtight container to reduce the gas pressure due to the gas that has entered from the sealed portion of the second airtight container. A hermetically sealed structure characterized by the above.
器が、同一容器により形成されていることを特徴とする
請求項1記載の気密封止構造体。2. The hermetically sealed structure according to claim 1, wherein the first hermetic container and the second hermetic container are formed of the same container.
し、前記基板間に多重の封止層を設け、第一の封止層と
第二の封止層との間の部分の二枚の基板の少なくともど
ちらか一方の基板の内側に溝をつけた形状にすることに
より、第一の封止層と第二の封止層との間に容積を形成
したことを特徴とする請求項2記載の気密封止構造体。3. Two flat plate-shaped substrates are arranged to face each other, multiple sealing layers are provided between the substrates, and a portion between the first sealing layer and the second sealing layer is provided. It is characterized in that a volume is formed between the first sealing layer and the second sealing layer by forming a groove inside at least one of the two substrates. The hermetically sealed structure according to claim 2.
器との間にゲッターを形成したことを特徴とする請求項
1記載の気密封止構造体。4. The hermetically sealed structure according to claim 1, wherein a getter is formed between the first hermetic container and the second hermetic container.
し、前記基板間に多重の封止層を設け、第一の封止層と
第二の封止層との間の部分の二枚の基板の少なくともど
ちらか一方の基板の内側に溝をつけた形状にすることに
より、第一の封止層と第二の封止層との間に容積を形成
する気密封止構造体の製造方法であって、二枚の平行平
板の少なくとも一方に封止のための少なくとも二重にし
て接着層を形成する工程と、必要としている気密容器内
の雰囲気と同様の雰囲気中において、二枚の平行平板を
前記接着層を介して接着する工程とを含むことを特徴と
する気密封止構造体の製造方法。5. Two flat plate-shaped substrates are arranged so as to face each other, a multiple sealing layer is provided between the substrates, and a portion between the first sealing layer and the second sealing layer is provided. An airtight sealing structure in which a volume is formed between the first sealing layer and the second sealing layer by forming a groove inside at least one of the two substrates. And a step of forming an adhesive layer in at least one double layer for sealing on at least one of the two parallel flat plates, and in an atmosphere similar to the atmosphere in the required airtight container, And a step of adhering a plurality of parallel flat plates via the adhesive layer, the method for producing an airtightly sealed structure.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4096094A JP3177087B2 (en) | 1994-03-11 | 1994-03-11 | Hermetic sealing structure and manufacturing method thereof |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4096094A JP3177087B2 (en) | 1994-03-11 | 1994-03-11 | Hermetic sealing structure and manufacturing method thereof |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH07249388A true JPH07249388A (en) | 1995-09-26 |
JP3177087B2 JP3177087B2 (en) | 2001-06-18 |
Family
ID=12595057
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Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP4096094A Expired - Fee Related JP3177087B2 (en) | 1994-03-11 | 1994-03-11 | Hermetic sealing structure and manufacturing method thereof |
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Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2000051155A1 (en) * | 1999-02-25 | 2000-08-31 | Canon Kabushiki Kaisha | Enclosure and image forming device comprising the same |
JP2002158088A (en) * | 2000-09-08 | 2002-05-31 | Semiconductor Energy Lab Co Ltd | El display device |
WO2002065653A1 (en) * | 2001-02-13 | 2002-08-22 | Nec Corporation | Radio receiver |
JP2007052395A (en) * | 2005-07-21 | 2007-03-01 | Toshiba Matsushita Display Technology Co Ltd | Display device |
KR100766966B1 (en) * | 2006-07-19 | 2007-10-12 | 삼성에스디아이 주식회사 | Plasma display panel |
KR101023140B1 (en) * | 2004-04-29 | 2011-03-18 | 삼성에스디아이 주식회사 | Flat Panel Display |
JP2011146404A (en) * | 2000-09-08 | 2011-07-28 | Semiconductor Energy Lab Co Ltd | Light-emitting device and its manufacturing method, and electric appliance |
-
1994
- 1994-03-11 JP JP4096094A patent/JP3177087B2/en not_active Expired - Fee Related
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2000051155A1 (en) * | 1999-02-25 | 2000-08-31 | Canon Kabushiki Kaisha | Enclosure and image forming device comprising the same |
JP2002158088A (en) * | 2000-09-08 | 2002-05-31 | Semiconductor Energy Lab Co Ltd | El display device |
JP2011146404A (en) * | 2000-09-08 | 2011-07-28 | Semiconductor Energy Lab Co Ltd | Light-emitting device and its manufacturing method, and electric appliance |
JP2012079705A (en) * | 2000-09-08 | 2012-04-19 | Semiconductor Energy Lab Co Ltd | Manufacturing method for light-emitting device |
WO2002065653A1 (en) * | 2001-02-13 | 2002-08-22 | Nec Corporation | Radio receiver |
US7206605B2 (en) | 2001-02-13 | 2007-04-17 | Nec Corporation | Radio receiver |
KR101023140B1 (en) * | 2004-04-29 | 2011-03-18 | 삼성에스디아이 주식회사 | Flat Panel Display |
JP2007052395A (en) * | 2005-07-21 | 2007-03-01 | Toshiba Matsushita Display Technology Co Ltd | Display device |
KR100766966B1 (en) * | 2006-07-19 | 2007-10-12 | 삼성에스디아이 주식회사 | Plasma display panel |
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Publication number | Publication date |
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JP3177087B2 (en) | 2001-06-18 |
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