JPH07146480A - Manufacture of color filter board with transparent electroconductive film - Google Patents

Abstract

PURPOSE:To enhance the attaching power of a transparent electroconductive film and provide excellent producibility by forming an impurity-doped SiNx film with a DC discharge sputter by the use of an impurity-doped Si target between the conductive film and a resin protection layer. CONSTITUTION:An Si target doped with impurities is used as a target for film formation process of an SiNx film 5. In a mechanism in which the specific resistance value of the impurity-dopes Si target is decremental, an acceptor level or doncr level is formed within a prohibit zone to cause a sink of the specific resistance in case the doping substance is element(s) belonging to the 3B group or 5B group-in case the doping substance is a metal element, the overall specific resistance lessens because of a high electroconductivity of metal element. Fabrication of the SiNx film 5 should favorably be made through a DC sputtering process, and the gas used be a mixture with a rare gas such as Ar, He, etc., for stabilization of electric discharging. Because the SiNx film does not use O2 gas, deterioration due to plasma in a resin protection layer can be suppressed.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of manufacturing a color filter substrate with a transparent conductive film used in a color liquid crystal display device.

[0002]

2. Description of the Related Art A transparent electrode used in a conventional color liquid crystal display device is generally a transparent substrate, a color filter layer,
PV such as sputtering method or vacuum deposition method on the resin protective layer
A transparent conductive film such as tin-doped indium oxide (ITO) is formed by the D method, and then a photolithography step,
It is manufactured by finely processing (patterning) the ITO electrode by a wet etching process.

However, the adhesion between the resin protective layer and the transparent conductive film is not sufficient, and the transparent conductive film is peeled off in the wet etching process, and there is a problem that the undercut or side etching is large and the patterning is not stable.

As a method for solving these problems, a method of forming an SiO ₂ film as an intermediate film between the resin protective layer and the transparent conductive film by RF discharge sputtering is mainly used, but RF discharge plasma with high activity is used. In particular, the patterning characteristics of the transparent conductive film were not stable because the resin protective film layer was damaged by oxygen plasma. Further, after the durability test, peeling occurs between the resin protective layer and the SiO ₂ film, which is not sufficient.

[0005]

SUMMARY OF THE INVENTION An object of the present invention is to solve the above-mentioned problems that the conventional method for producing a transparent electrode has, and to improve the adhesion of the transparent conductive film. Provided is a method for manufacturing a color filter substrate with a transparent conductive film, which is excellent in productivity.

[0006]

The present invention has been made to solve the above-mentioned problems, and is a color filter comprising a transparent substrate, a color filter layer, a resin protective layer, and a transparent conductive film formed in this order. In the method for manufacturing a substrate, a SiN _x film is formed by a DC sputtering method in a gas atmosphere containing N ₂ and / or NH ₃ using a Si target doped with impurities between a resin protective layer and a transparent conductive film. And a method for producing a color filter substrate with a transparent conductive film.

FIG. 1 is a sectional view of a color filter substrate according to the present invention. Reference numeral 1 is a transparent substrate, 2 is a color filter, 3 is a resin protective layer, 4 is a transparent conductive film, and 5 is a SiN _x film.

The transparent substrate 1 is a substrate represented by glass. As the transparent conductive film 4, for example, tin is 5 to 10 wt%
A typical example is doped indium oxide (ITO), but other metal compound thin films may be used.

Examples of the color filter 2 include, but are not limited to, polyimide resin and acrylic resin by a pigment dispersion method, epoxy resin by a printing method, gelatin by a dyeing method, and the like.

The material for the resin protective layer 3 is not particularly limited, and any of acrylic, polyimide, silicone and the like can be used.

In forming the SiN _x film 5, an impurity-doped Si target is used as a target. As impurities, P, B, Fe, Cr, and Al
It is preferable to contain at least one selected from the group consisting of as a main component, but other 3B group or 5B group elements or other metal elements may be used as long as they do not hinder the operation of the color liquid crystal display device. Especially, the specific resistance is 10 ⁴ Ωc
If a target in which Si is doped with impurities so as to be less than or equal to m is used, DC sputtering that is easy to control, has a high film formation rate, and is excellent in film quality uniformity becomes possible.

The mechanism by which the resistivity of the Si target doped with impurities decreases is not clear, but when Si is doped with an element of the 3B group or the 5B group, the acceptor level and the donor are in the forbidden band. It is considered that a level is formed to lower the specific resistance, and when Si is doped with a metal element, the specific resistance is lowered as a whole because the conductivity of the metal element is high.

DC sputtering is the most preferable method for producing the SiN _x film, and only N ₂ or NH ₃ may be used as the gas for sputtering, but a mixed gas with a rare gas such as Ar or He is necessary for stable discharge. preferable.

Although the SiN _x film thickness is not particularly limited,
It is preferably 20 Å or more and 500 Å or less. If the thickness is less than 20Å, sufficient gas barrier performance and adhesion performance cannot be obtained.
If it is thicker than 00Å, the internal stress in the film becomes large and cracks are likely to occur.

[0015]

Since the SiN _x film of the present invention does not use O ₂ gas at the time of production, there is no reactive O ₂ plasma which is a problem when forming the SiO ₂ film. R with a highly active plasma by doping various impurities to improve conductivity
DC sputtering can be used instead of F sputtering, and deterioration of the resin protective layer due to plasma can be suppressed as much as possible. Further, the SiN _x film of the present invention blocks organic gas from the resin protective layer during the production of the transparent conductive film and does not deteriorate the transparent conductive film, and thus has high adhesiveness and improves the patterning property of the transparent conductive film. Has the effect of.

Further, since the DC sputtering method is possible, it is easier to control than the RF discharge sputtering method, no very expensive matching box is required, the film forming rate is remarkably high, and the productivity is excellent.

[0017]

Example A color filter forming liquid in which a pigment is dispersed in a resin is applied to a transparent glass substrate by a spin coater to form a color filter layer having a thickness of 5 μm, and an acrylic resin is used as a resin protective layer on the roll coater method. 3μ
m coated. A target having a specific resistance of 1.6 Ωcm in which P was doped with Si at 1 ppm was used, and a sputtering gas having a ratio of Ar gas and N ₂ gas of 7: 3 was used. Was introduced into the chamber at a pressure of 4 × 10 ⁻³ Torr, and P-doped Si was formed by DC magnetron sputtering.
N _X film (hereinafter referred to as DC-SiN _X film) has a film thickness of 100.
It was formed to be Å. On top of that, an ITO film D
It was manufactured by the C magnetron sputtering method so that the film thickness would be 2500 Å.

A linear resist was formed on the ITO film by a photolithography method, and the ITO film was patterned with an etching solution containing hydrochloric acid, ferric chloride and water in a weight ratio of 2: 1: 1. The results are shown in Table 1.

For comparison, an ITO transparent conductive film having a thickness of 2500 Å is directly formed on the resin protective layer, and the resin protective layer and I
An SiO ₂ film (hereinafter, referred to as RF-SiO ₂ film) and a SiN _x (hereinafter, referred to as RF-SiN _x film) film were formed as 100 Å as an intermediate film between the TO transparent conductive films, and then ITO transparent film was formed. Conductive film 2
Table 1 also shows a film obtained by forming a film of 500 Å and patterning the ITO film. IT measured by secondary ion mass spectrometry at the same time
The carbon amount (C amount) taken into the O film was expressed as a ratio to the indium amount (In amount). Table 1 also shows the state of the interface between the resin protective layer and the intermediate film after the durability test.

[0020] When the DC-SiN _X film of the present invention is used as an intermediate film, or when an intermediate layer that does not use an intermediate film RF-
ITO rather than SiO ₂ film or RF-SiN _x film
The amount of carbon taken in the film was small, the side etching amount was small and 1 μm or less, and the patterning property was excellent. If further the DC-SiN _X film and the intermediate film, peeling at the interface between the post-endurance test also the resin protective layer was observed.

Without the intermediate film, the ITO film has a sheet resistance value of 12 to 13 Ω / □, and the intermediate film is an RF-SiO ₂ film or R film.
Sheet resistance of the use the ITO film F-SiN _X film 9-1
Although it was 0 Ω / □, a sheet resistance value of 8 to 9 Ω / □ was obtained when the DC-SiN _X film was used as the intermediate film.

[0022]

[Table 1]

[0023]

According to the present invention in the method for producing a transparent electrode with a color filter substrate to form an impurity-doped SiN _X film by DC discharge sputtering with a doped Si target during the resin protective layer and the transparent conductive film The adhesive force of the transparent conductive film is improved, the patterning property of the transparent conductive film is improved, and a good transparent electrode pattern can be formed. In addition, when the SiN _x film is formed, by using the DC sputtering method, the control is easy, and the film formation rate is remarkably high, so that the productivity is excellent. Further, since the RF discharge is not used, a very expensive matching box becomes unnecessary, and there is an economic effect that the cost of the device can be reduced.

[Brief description of drawings]

FIG. 1 is a sectional view of a color filter substrate according to the present invention.

[Explanation of symbols]

1: Substrate 2: Color filter 3: Resin protective layer 4: Transparent conductive film 5: SiN _x film

 ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor Satoshi Osaki 1150, Hazawa-machi, Kanagawa-ku, Yokohama, Kanagawa Prefecture Asahi Glass Co., Ltd. Central Research Laboratory (72) Inventor Yasushi Hayashi 1150, Hazawa-machi, Kanagawa-ku, Yokohama, Japan Asahi Glass Co., Ltd. Central Research Center

Claims (2)

[Claims] 1. A method for producing a color filter substrate comprising a color filter layer, a resin protective layer and a transparent conductive film formed in this order on a transparent substrate, wherein impurities are doped between the resin protective layer and the transparent conductive film. Using a Si target, N
_A method for producing a color filter substrate with a transparent conductive film, comprising forming a SiN _x film by a DC sputtering method in a gas atmosphere containing ₂ and / or NH ₃ . 2. The method for producing a color filter substrate with a transparent conductive film according to claim 1, wherein the impurities are at least one selected from the group consisting of P, B, Fe, Cr and Al.