JPH07107946B2 - Optical semiconductor device - Google Patents
Optical semiconductor deviceInfo
- Publication number
- JPH07107946B2 JPH07107946B2 JP61025857A JP2585786A JPH07107946B2 JP H07107946 B2 JPH07107946 B2 JP H07107946B2 JP 61025857 A JP61025857 A JP 61025857A JP 2585786 A JP2585786 A JP 2585786A JP H07107946 B2 JPH07107946 B2 JP H07107946B2
- Authority
- JP
- Japan
- Prior art keywords
- optical semiconductor
- semiconductor device
- inp
- light emitting
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Landscapes
- Die Bonding (AREA)
- Semiconductor Lasers (AREA)
- Light Receiving Elements (AREA)
Description
【発明の詳細な説明】 〔発明の利用分野〕 本発明は、精密な位置精度でマウントが可能な光半導体
素子に関する。TECHNICAL FIELD The present invention relates to an optical semiconductor device that can be mounted with precise positional accuracy.
従来の半導体レーザやホトダイオードなどの光半導体素
子は、例えば光通信光素子工学（米津宏雄著，工学図
書）のp.240やp.416に記載のような構造となつており、
素子の側面はスクライブして作られるための素子の外形
寸法には大きなばらつきがある。したがつて、素子の発
光部または受光部の位置をマウントに対して精度良く位
置決めすることが不可能であつた。Conventional optical semiconductor devices such as semiconductor lasers and photodiodes have structures such as those described in p.240 and p.416 of optical communication optical device engineering (Hiroo Yonezu, Engineering Book),
Since the side surface of the element is made by scribing, there are large variations in the external dimensions of the element. Therefore, it is impossible to accurately position the light emitting portion or the light receiving portion of the device with respect to the mount.
本発明の目的は、位置精度良くマウントに固着可能な発
光部を有する光半導体素子を提供することにある。An object of the present invention is to provide an optical semiconductor element having a light emitting portion that can be fixed to a mount with high positional accuracy.
光通信に用いる半導体レーザは光フアイバと効率良く結
合させるために、発光部を精度良く位置決めする必要が
ある。この際、チツプの外壁を利用して機械精度でチツ
プをマウントすることが望ましい。このため、発光部か
らの外壁の位置を精度良く決定できるホトリソグラフイ
ー技術などを利用することに着目した。In the semiconductor laser used for optical communication, it is necessary to position the light emitting portion with high precision in order to efficiently couple with the optical fiber. At this time, it is desirable to mount the chip with mechanical accuracy using the outer wall of the chip. For this reason, we focused on using photolithography technology that can accurately determine the position of the outer wall from the light emitting unit.
以下、本発明の実施例を第１図により説明する。 An embodiment of the present invention will be described below with reference to FIG.
この図は従来の埋め込みヘテロ形半導体レーザの上部の
活性層の両側にＶ溝を形成したものである。図におい
て、１はｐ側電極、２はp+一拡散領域、３はInGaAsPキ
ヤツプ層、４はｐ−InPクラツド層、５はInGaAsP活性
層、６はｎ−InPクラツド層、７はｎ−InP基板、８はｎ
側電極、９はｎ−InPブロツク層、10はｐ−InPブロツク
層である。本実施例ではＶ溝を利用して位置決めをす
る。すなわち、２本の逆Ｖ型のストライブ状突起を有し
たマウントに第１図の素子をはめ込む形となる。このた
め、活性層５近傍の台形リツジ形状部にかかる外力が低
減されるばかりでなく、Ｖ溝で位置決めするため、極め
て精密な位置精度が実現できる。In this figure, a V groove is formed on both sides of the active layer above the conventional buried hetero semiconductor laser. In the figure, 1 is a p-side electrode, 2 is a p + diffusion region, 3 is an InGaAsP cap layer, 4 is a p-InP cladding layer, 5 is an InGaAsP active layer, 6 is an n-InP cladding layer, and 7 is n-InP. Substrate, 8 is n
A side electrode, 9 is an n-InP block layer, and 10 is a p-InP block layer. In this embodiment, the V-groove is used for positioning. That is, the element shown in FIG. 1 is fitted into a mount having two inverted V-shaped stripe-shaped protrusions. Therefore, not only the external force applied to the trapezoidal ridge shape portion near the active layer 5 is reduced, but also the V groove is used for positioning, so that extremely precise position accuracy can be realized.
本発明によれば、発光部を有する光半導体素子を位置精
度良くマウントに固着することができる効果がある。According to the present invention, there is an effect that the optical semiconductor element having the light emitting portion can be fixed to the mount with high positional accuracy.
第１図は本発明の一実施例を示す図である。 １……ｐ側電極、２……p+−拡散領域、３……InGaAsP
キヤツプ層、４……ｐ−InPクラツド層、５……InGaAsP
活性層、６……ｎ−InPクラツド層、７……ｎ−InP基
板、８……ｎ側電極、９……ｎ−InPブロツク層、10…
…ｐ−InPブロツク層。FIG. 1 is a diagram showing an embodiment of the present invention. 1 ... p-side electrode, 2 ... p + -diffusion region, 3 ... InGaAsP
Cap layer, 4 ... p-InP cladding layer, 5 ... InGaAsP
Active layer, 6 ... n-InP cladding layer, 7 ... n-InP substrate, 8 ... n side electrode, 9 ... n-InP block layer, 10 ...
... p-InP block layer.
───────────────────────────────────────────────────── フロントページの続き (72)発明者 井本 克之 東京都国分寺市東恋ヶ窪１丁目280番地 株式会社日立製作所中央研究所内 (72)発明者 前田 稔 東京都国分寺市東恋ヶ窪１丁目280番地 株式会社日立製作所中央研究所内 (56)参考文献 特開 昭54−14181（ＪＰ，Ａ) 特開 昭50−79286（ＪＰ，Ａ) ─────────────────────────────────────────────────── ─── Continuation of front page (72) Inventor Katsuyuki Imoto 1-280 Higashi Koigakubo, Kokubunji, Tokyo Inside Central Research Laboratory, Hitachi, Ltd. (72) Minoru Maeda 1-280 Higashi Koigakubo, Kokubunji, Tokyo Hitachi Ltd. Central Research Laboratory (56) References JP-A-54-14181 (JP, A) JP-A-50-79286 (JP, A)
Claims (1)
記光半導体素子の発光部の両側に、それぞれ位置決めの
ためのＶ溝を形成したことを特徴とする光半導体素子。1. An optical semiconductor element having a light emitting portion, wherein V grooves for positioning are formed on both sides of the light emitting portion of the optical semiconductor element.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61025857A JPH07107946B2 (en) | 1986-02-10 | 1986-02-10 | Optical semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61025857A JPH07107946B2 (en) | 1986-02-10 | 1986-02-10 | Optical semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS62185387A JPS62185387A (en) | 1987-08-13 |
| JPH07107946B2 true JPH07107946B2 (en) | 1995-11-15 |
Family
ID=12177489
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61025857A Expired - Lifetime JPH07107946B2 (en) | 1986-02-10 | 1986-02-10 | Optical semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH07107946B2 (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5303793B2 (en) * | 2010-03-10 | 2013-10-02 | Ｎｔｔエレクトロニクス株式会社 | Photodiode |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5414181A (en) * | 1977-07-04 | 1979-02-02 | Fujitsu Ltd | Semiconductor laser unit |
-
1986
- 1986-02-10 JP JP61025857A patent/JPH07107946B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPS62185387A (en) | 1987-08-13 |
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