JP2570357B2 - Semiconductor light emitting device - Google Patents
Semiconductor light emitting deviceInfo
- Publication number
- JP2570357B2 JP2570357B2 JP2227188A JP2227188A JP2570357B2 JP 2570357 B2 JP2570357 B2 JP 2570357B2 JP 2227188 A JP2227188 A JP 2227188A JP 2227188 A JP2227188 A JP 2227188A JP 2570357 B2 JP2570357 B2 JP 2570357B2
- Authority
- JP
- Japan
- Prior art keywords
- active layer
- light emitting
- laser
- layer
- emitting device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
- H01S5/18338—Non-circular shape of the structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18305—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] with emission through the substrate, i.e. bottom emission
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18355—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a defined polarisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/2205—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers
- H01S5/2222—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers having special electric properties
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Description
【発明の詳細な説明】 〔概要〕 半導体反抗装置に係り，特に面発光型の半導体レーザ
に関し， レーザ光の偏波面を安定ならしめることを目的とし， （１）面発光型の半導体レーザであって，楕円形の活性
層を有することを特徴とする半導体発光装置，または （２）面発光型の半導体レーザであって，円形の活性層
と該活性層の両側に形成された溝とを有することを特徴
とする半導体発光装置，をもって構成とする。DETAILED DESCRIPTION OF THE INVENTION [Summary] The present invention relates to a semiconductor repelling device, and more particularly to a surface-emitting type semiconductor laser, which aims to stabilize the polarization plane of laser light. And (2) a surface-emitting type semiconductor laser having a circular active layer and grooves formed on both sides of the active layer. And a semiconductor light emitting device characterized by the above.
本発明は半導体発光装置に係り，特に面発光型の半導
体レーザに関する。The present invention relates to a semiconductor light emitting device, and more particularly to a surface emitting semiconductor laser.
コヒーレント光通信方式では，レーザ光の偏波面の安
定なレーザが要求されている。このため，かかるレーザ
を開発する必要がある。In the coherent optical communication system, a laser having a stable polarization plane of laser light is required. Therefore, it is necessary to develop such a laser.
コヒーレント光通信方式では高速変調時において単一
波長発振するレーザが望まれており，かかるレーザの一
つとして短共振器レーザがある。短共振器レーザの一つ
の構造として面発光型の半導体レーザがあり，第３図に
その構造を示す。In the coherent optical communication system, a laser that oscillates at a single wavelength during high-speed modulation is desired. One of such lasers is a short cavity laser. As one structure of the short cavity laser, there is a surface emitting type semiconductor laser, and FIG. 3 shows the structure.
基板１の上に活性層2,埋込層3,電流阻止層4,クラッド
層５が形成されている。従来構造では活性層が円形であ
る。An active layer 2, a buried layer 3, a current blocking layer 4, and a cladding layer 5 are formed on a substrate 1. In the conventional structure, the active layer is circular.
かかる構造では屈折率分布が円対称で，レーザ光の偏
波面を安定に保つことができなかった。そのため送信側
のレーザ光の偏波面が安定せず，受信側では信号の検波
が不可能であった。In such a structure, the refractive index distribution is circularly symmetric, and the polarization plane of the laser beam cannot be stably maintained. For this reason, the polarization plane of the laser light on the transmission side was not stabilized, and it was impossible to detect the signal on the reception side.
従って，レーザ光の偏波面を安定化させ，受信側での
検波を可能ならしめるという課題があり，本発明はかか
る課題に応えるものである。Therefore, there is a problem of stabilizing the polarization plane of the laser light and enabling detection on the receiving side, and the present invention meets such a problem.
（１）面発光型の半導体レーザであって，楕円形の活性
層を有することを特徴とする半導体発光装置，または （２）面発光型の半導体レーザであって，円形の活性層
と該活性層の両側に形成された溝とを有することを特徴
とする半導体発光装置 により，上記課題に応えることができる。(1) a surface-emitting type semiconductor laser having an elliptical active layer, or (2) a surface-emitting type semiconductor laser having a circular active layer and the active layer. The above problem can be solved by a semiconductor light emitting device having a groove formed on both sides of a layer.
面発光型の半導体レーザの活性層は埋込構造となって
おり，活性層に垂直にレーザ光が出て来るのであるが，
活性層を楕円形にすると活性層を含む面上において楕円
の長軸方向と短軸方向で屈折率分布が異なることから，
一度安定した偏波が生じるとその偏波面は安定に保たれ
る。The active layer of a surface-emitting type semiconductor laser has a buried structure, and laser light is emitted perpendicular to the active layer.
When the active layer is made elliptical, the refractive index distribution differs between the major axis direction and the minor axis direction of the ellipse on the plane containing the active layer.
Once a stable polarization occurs, its polarization plane is kept stable.
活性層の近くの両側に溝を形成しても同様の効果が得
られる。即ち光は活性層だけにとどまらず，その周囲に
いくらか染み出るので，その領域に溝を形成すると活性
層を含む面上において溝を結ぶ方向とそれに垂直な方向
で屈折率分布が異なり，一度安定した偏波を生じるとそ
の偏波面は安定に保たれる。Similar effects can be obtained by forming grooves on both sides near the active layer. In other words, light leaks out not only into the active layer but also around the active layer. If a groove is formed in that region, the refractive index distribution differs between the direction connecting the groove and the direction perpendicular to the groove on the surface containing the active layer, and once stable. When a polarized wave is generated, its plane of polarization is kept stable.
以下本発明の実施例について説明する。 Hereinafter, embodiments of the present invention will be described.
第１図に実施例（１）を示す。ｎ−Inp基板１上にInG
aAsPの活性層2,p−InPの埋込層3,n−InPの電流阻止層4,
p−InPのクラッド層５を形成する。活性層２は楕円形に
パターニングする。基板とクラッド層に電極6,7を取り
つける。発光領域（活性層）上の基板をほとんど発光領
域近くまで掘削する。FIG. 1 shows an embodiment (1). InG on n-Inp substrate 1
aAsP active layer 2, p-InP buried layer 3, n-InP current blocking layer 4,
A p-InP cladding layer 5 is formed. The active layer 2 is patterned into an elliptical shape. The electrodes 6 and 7 are attached to the substrate and the cladding layer. The substrate on the light emitting region (active layer) is excavated almost to the vicinity of the light emitting region.
楕円形の発光領域から出て来るレーザ光は偏波面が安
定に保たれる。The polarization plane of the laser light emitted from the elliptical light emitting region is kept stable.
第２図に実施例（２）を示す。ｎ−InP基板１上にInG
aAsPの活性層2,p−InPの埋込層3,n−InPの電流阻止層4,
p−InPのクラッド層５を形成する。活性層２は円形にパ
ターニングする。基板とクラッド層に電極6,7を取りつ
ける。発光領域（活性層）上の基板をほとんど発光領域
近くまで掘削する。FIG. 2 shows an embodiment (2). InG on n-InP substrate 1
aAsP active layer 2, p-InP buried layer 3, n-InP current blocking layer 4,
A p-InP cladding layer 5 is formed. The active layer 2 is patterned in a circular shape. The electrodes 6 and 7 are attached to the substrate and the cladding layer. The substrate on the light emitting region (active layer) is excavated almost to the vicinity of the light emitting region.
クラッド層側から活性層の両側に溝を堀り，二つの溝
が活性層を挟む深さまで堀り下げる。Grooves are formed on both sides of the active layer from the cladding layer side, and two grooves are formed to a depth sandwiching the active layer.
レーザ光は活性層から周囲に染み出して溝の影響を受
け，屈折率分布が円対称からずれて，偏波面が安定に保
たれる。The laser light oozes out of the active layer to the surroundings and is affected by the groove, the refractive index distribution deviates from circular symmetry, and the polarization plane is kept stable.
以上説明した様に，本発明によれば，偏波面を安定に
保つ面発光レーザが実現でき，コヒーレント光通信方式
の発展に寄与する。As described above, according to the present invention, a surface emitting laser that maintains a stable polarization plane can be realized, which contributes to the development of a coherent optical communication system.
第１図は実施例（１）， 第２図は実施例（２）， 第３図は従来の面発光レーザ である。図において， １は基板， ２は活性層， ３は埋込層， ４は電流阻止層， ５はクラッド層， 6,7は電極， ８は溝 を表す。 FIG. 1 shows an embodiment (1), FIG. 2 shows an embodiment (2), and FIG. 3 shows a conventional surface emitting laser. In the figure, 1 is a substrate, 2 is an active layer, 3 is a buried layer, 4 is a current blocking layer, 5 is a cladding layer, 6, 7 are electrodes, and 8 is a groove.
Claims (2)
の活性層（２）を有することを特徴とする半導体発光装
置。1. A semiconductor light emitting device, comprising: a surface emitting semiconductor laser having an elliptical active layer (2).
活性層（２）と該活性層の両側に形成された溝（８）と
を有することを特徴とする半導体発光装置。2. A semiconductor light emitting device comprising a surface emitting type semiconductor laser having a circular active layer (2) and grooves (8) formed on both sides of the active layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2227188A JP2570357B2 (en) | 1988-02-02 | 1988-02-02 | Semiconductor light emitting device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2227188A JP2570357B2 (en) | 1988-02-02 | 1988-02-02 | Semiconductor light emitting device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH01196884A JPH01196884A (en) | 1989-08-08 |
| JP2570357B2 true JP2570357B2 (en) | 1997-01-08 |
Family
ID=12078100
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2227188A Expired - Lifetime JP2570357B2 (en) | 1988-02-02 | 1988-02-02 | Semiconductor light emitting device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2570357B2 (en) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2783086B2 (en) * | 1992-09-25 | 1998-08-06 | 日本電気株式会社 | Semiconductor laser device and optical connection device |
| US5345462A (en) * | 1993-03-29 | 1994-09-06 | At&T Bell Laboratories | Semiconductor surface emitting laser having enhanced polarization control and transverse mode selectivity |
| US5778018A (en) * | 1994-10-13 | 1998-07-07 | Nec Corporation | VCSELs (vertical-cavity surface emitting lasers) and VCSEL-based devices |
| US6967985B2 (en) | 2002-02-12 | 2005-11-22 | Sanyo Electric Co., Ltd. | Surface emission semiconductor laser device |
| JP4687064B2 (en) * | 2004-10-22 | 2011-05-25 | ソニー株式会社 | Surface emitting semiconductor laser device |
| JP2014017448A (en) * | 2012-07-11 | 2014-01-30 | Ricoh Co Ltd | Surface emitting laser, surface emitting laser array, optical scanner device and image forming device |
-
1988
- 1988-02-02 JP JP2227188A patent/JP2570357B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPH01196884A (en) | 1989-08-08 |
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