JPH0693430A - Gas deposition method for superfine particle and device therefor - Google Patents

Abstract

PURPOSE:To deposit the thin film of superfine particles on a substrate by heating and melting a material to be evaporated by high-frequency induction current in a vacuum chamber, cooling the evaporated matter from the surface thereof with an inert gas in the state of suspending the material in the space in the vacuum chamber and transporting the substrate into a film forming chamber. CONSTITUTION:The inside of the superfine particle forming chamber 2 is evacuated to a vacuum and the high-frequency current of 50kHz is passed from a power source 18 to a circular conical high-frequency coil 6 mounted on the outer periphery of a cylinder 5 contg. the work (m), such as iron, to heat and melt the work (m) by the induction current. The melt is suspended in the form of the spherical melt in the space by the magnetic flux generated by the induction current and the magnetic repulsion force of the magnetic flux generated by the high-frequency current. The atoms of the work (m) evaporated from the surface thereof are rapidly cooled by the gaseous Ar flow 2 a high velocity from below to above from a cylinder 17 to be made into a superfine particle form. The superfine particles are mixed with gaseous Ar and are made into an aerosol form. The aerosol is transported from a transporting pipe 9 into the film forming chamber 21 and is injected on the substrate 25, by which the deposited film having the dense structure is formed.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method and apparatus for gas deposition of ultrafine particles.

[0002]

2. Description of the Related Art A conventional gas deposition apparatus using ultrafine particles is disclosed in "Mixing method and apparatus for ultrafine particles" of Japanese Patent No. 1531607 (registered November 24, 1991) shown in FIG. As described above, in the first generation chamber 30, the evaporation raw material A is housed in the graphite crucible 31, the inside of the generation chamber 30 is exhausted by the vacuum exhaust device 34, and then the carrier gas (mainly helium and argon is supplied from the gas supply port 35. An inert gas such as hydrogen or a reducing gas such as hydrogen) is introduced into the generation chamber 30, and the heater 32 made of tantalum or tungsten
By heating the crucible 31 by supplying the power source 34,
The evaporation raw material A is evaporated by indirect heating for heating the evaporation raw material A. In the second generation chamber 37, the evaporation raw material B is housed in a tungsten basket container 38 coated with a heat-resistant material such as aluminum oxide, and the inside of the generation chamber 37 is evacuated by a vacuum exhaust device 40. Argon gas is introduced from the gas supply port 41, and the basket container 38
Is supplied with a power source 39 to heat and evaporate the evaporation raw material by direct heating. In the ultrafine particles A and B produced in the production chambers 30 and 37, the ultrafine particles of the evaporation raw material A are the nozzle 42,
And the nozzle 4 in which a part of the nozzle 42 is inserted inside
3, the ultrafine particles of the evaporation raw material B are introduced into the gap between the nozzles 42 and 43, mixed with the evaporation raw material A in the nozzle 43, and conveyed to the film formation chamber 43. The mixed ultrafine particles of the evaporation raw materials A and B transported into the film forming chamber 43 form an ultrafine particle film on the substrate 45.

Further, as shown in FIG. 6, in the production of ultrafine particles, the evaporation raw material C is accommodated in the boat-shaped heater 51 made of tungsten in the vacuum tank 50, and the inside of the vacuum tank 50 is evacuated by the vacuum exhaust device 53. After exhausting, there is also a simple method of introducing argon gas from the gas supply port 54, supplying electric power from the power source 52 to the heater 51, and heating and evaporating the evaporation raw material C by direct heating.

[0004]

In the method of producing ultrafine particles described above, when the evaporation raw material is iron, the temperature of iron during evaporation is 1650 ° C to 1700 ° C (the melting point of iron is 1530).
C.) and the crucible or coating material should be heated to ~ 1800 C and the heater to a high temperature of 1900-2000 C. In this case, release gas is generated from the crucible and heater coating material due to high temperature heating,
This mixes with the carrier gas, reducing the purity of the carrier gas,
It also reduces the purity of evaporated ultrafine particles. Also, when tungsten is used as the material of the heater, when oxygen or water is contained in the released gas, it reacts with high temperature tungsten to evaporate into tungsten oxide (for example, WO ₃ ), which evaporates in the ultrafine particles. This is mixed in. In any case, impurities are mixed in the gas-deposited ultrafine particle deposition film,
This causes the characteristics to deteriorate.

The present invention has been made in view of the above problems, and in a gas deposition apparatus using ultrafine particles, an ultrafine particle film having high purity is produced by maintaining ultrafine particles and carrier gas at a high purity level. With the goal.

[0006]

[Means for Solving the Problems] The above objects are achieved by heating the evaporation material placed in the ultrafine particle generation chamber,
Ultrafine particle gas deposition method in which ultrafine particles evaporated from the evaporation material are conveyed together with a carrier gas into a film forming chamber to a film forming chamber, and a film of the ultrafine particles is formed on a substrate arranged in the film forming chamber. In the heating, heating is performed by causing an induction current to flow in the evaporation material formed of a metal block by applying a high frequency current to a coil, and between the magnetic flux generated in the evaporation material by the induction current and the magnetic flux caused by the high frequency current. The magnetic repulsive force causes the evaporation material to be heated and evaporated in a state of being suspended in the carrier gas, and the evaporated ultrafine particles are conveyed together with the carrier gas into the film forming chamber. This is achieved by the gas deposition method of.

For the above-mentioned purpose, a heating device provided in the ultrafine particle generation chamber for heating the evaporation material, and ultrafine particles heated by the heating device and evaporated from the evaporation material are formed into a film from the ultrafine particle generation chamber. In a gas deposition apparatus for ultrafine particles, which comprises a transport pipe for introducing the ultrafine particles into the chamber, and a pipe for introducing a carrier gas for transporting the ultrafine particles into the film forming chamber, the heating device is electrically connected to a high frequency power source. And a support member having an opening formed immediately above the introduction pipe, the support member comprising:
Further, a tubular member is provided inside the coil, and a gas inlet of the carrier pipe is provided in an upper portion of the tubular member to induce and heat the evaporation material made of a metal block in the tubular member. It is achieved by an ultrafine particle gas deposition apparatus characterized in that

The above-mentioned object is to heat the evaporation material placed in the ultrafine particle generation chamber, so that the ultrafine particles evaporated from the evaporation material are conveyed to the film forming chamber together with the carrier gas into the film forming chamber. In the ultrafine particle gas deposition method for forming a film of the ultrafine particles on a substrate arranged in a film forming chamber, the evaporation material is ceramics, and the ceramics are obtained by heating the carrier gas to a predetermined temperature. The evaporative material consisting of is heated by the carrier gas to become a conductor, and a high-frequency current is passed through a coil to cause an induction current to flow in the evaporative material made of the ceramics to heat the vaporized material. Due to the magnetic repulsive force between the magnetic flux generated in the carrier and the magnetic flux generated by the high-frequency current, the vaporized material is heated and vaporized in a state of being suspended in the carrier gas. It is accomplished by a gas deposition method fine particles, characterized in that for transporting the ultrafine particles evaporated from the evaporation material to the film forming chamber together with the carrier gas.

For the above objects, a heating device provided in the ultrafine particle generation chamber for heating the evaporation material, and ultrafine particles heated by the heating device and evaporated from the evaporation material are formed into a film from the ultrafine particle generation chamber. In the gas deposition apparatus for ultrafine particles, which comprises a transport pipe for introducing the ultrafine particles into the chamber, and a pipe for introducing a carrier gas for transporting the ultrafine particles into the film forming chamber, the heating device is electrically connected to a high frequency power source. A support member having an opening formed immediately above the introduction pipe, a tubular member provided on the support member and inside the coil, and an upper portion inside the tubular member. And a heating means for heating the carrier gas to a predetermined temperature is provided, and the evaporation material made of ceramics is induction-heated in the tubular member. It is accomplished by a gas deposition apparatus of the microparticles.

Further, the above object is to heat the evaporating material placed in the ultrafine particle generating chamber, so that the ultrafine particles evaporated from the evaporating material are conveyed to the film forming chamber together with the conveying gas through the conveying pipe, In the ultrafine particle gas deposition method for forming a film of the ultrafine particles on a substrate arranged in a film forming chamber, the heating is performed by passing a high frequency current through a coil to remove the evaporation material made of a polar organic polymer material. Ultrafine particle gas heated by dielectric loss, heated and evaporated in a state of being suspended by the carrier gas, and carrying the ultrafine particles evaporated from the evaporation material into the film forming chamber together with the carrier gas. Achieved by the deposition method.

For the above-mentioned object, a heating device for heating an evaporation material provided in the ultrafine particle generation chamber, and ultrafine particles heated by the heating device and evaporated from the evaporation material are formed into a film from the ultrafine particle generation chamber. In a gas deposition apparatus for ultrafine particles, which comprises a transport pipe for introducing the ultrafine particles into the chamber, and a pipe for introducing a carrier gas for transporting the ultrafine particles into the film forming chamber, the heating device is electrically connected to a high frequency power source. A support member having an opening formed immediately above the introduction pipe, a tubular member provided on the support member and inside the coil, and an upper portion inside the tubular member. The gas inlet of the carrier pipe is provided in the cylindrical member, the evaporation material made of a polar organic polymer material is heated in the tubular member by dielectric loss, and the carrier gas is jetted from below to float. Characteristic It is accomplished by a gas deposition apparatus ultrafine particles.

The above-mentioned object is to heat the evaporation material placed in the ultrafine particle generation chamber, so that the ultrafine particles evaporated from the evaporation material are conveyed to the film forming chamber together with the carrier gas into the film forming chamber. In the gas deposition method of ultrafine particles for forming a film of the ultrafine particles on a substrate arranged in a film forming chamber, the evaporation material is a polar organic polymer material, and the carrier gas is heated to a predetermined temperature by a heating means. The state in which the evaporation material made of the polar organic polymer material is heated by the carrier gas, and the carrier gas is caused to flow upward from below to float the evaporation material. Gas deposition method for ultra-fine particles, characterized in that the ultra-fine particles evaporated from the evaporation material are carried into the film forming chamber together with the carrier gas. Thus it is achieved.

Further, the above objects are to provide a heating device for heating the evaporation material provided in the ultrafine particle generation chamber, and to introduce the ultrafine particles heated by the heating device and evaporated from the evaporation material into the film forming chamber. In the gas deposition apparatus for the ultrafine particles, which is provided with a transport pipe and a carrier gas introduction pipe for transporting the ultrafine particles into the film formation chamber in the ultrafine particle generation chamber, an opening is provided immediately above the introduction pipe. Is provided, a tubular member is provided on the support member, the gas introduction port of the carrier pipe is provided in the upper part of the tubular member, and the carrier gas is heated to a predetermined temperature. A heating means is provided, whereby the evaporation material made of a polar organic polymer material is heated in the cylindrical member and is floated from the supporting member. It is achieved.

[0014]

[Function] By evaporating a high-frequency current through a coil, a vaporization material made of a metal or a ceramic conductor having conductivity, a magnetic repulsion force is generated between the magnetic flux generated in the vaporization material and the magnetic flux generated by the high-frequency current. Is suspended, and an induced current is passed through the evaporation material to heat and evaporate, so the evaporation area of the evaporation material is large, and ultrafine particles can be efficiently evaporated from the evaporation material, and no impure gas is generated. Therefore, the purity of ultrafine particles is also increased. Further, the evaporation material made of a polar organic polymer material is heated by dielectric loss by passing a high-frequency current through the coil, and the evaporation material is heated and evaporated by the carrier gas in a suspended state. The evaporation area is increased, the ultrafine particles can be efficiently evaporated from the evaporation material, and the purity of the ultrafine particles is increased because no impure gas is generated. Furthermore, since the evaporation material composed of the polar organic polymer material is heated by the carrier gas, and the evaporation material is heated and evaporated by the carrier gas in a suspended state, the evaporation area of the evaporation material becomes large and Therefore, the ultrafine particles can be efficiently evaporated, and the purity of the ultrafine particles is increased.

[0015]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENT A gas deposition apparatus according to an embodiment of the present invention will be described below with reference to the drawings.

FIG. 1 shows a gas deposition apparatus 1 of the present invention. The gas deposition apparatus 1 comprises an ultrafine particle generation chamber 2 and a film forming chamber 21, and these chambers 2 and 21 penetrate through the upper wall portions of each. They are communicated with each other by a transfer pipe 9 that is arranged. The ultrafine particle generation chamber 2 is provided on the right side wall of the ultrafine particle generation chamber 2.
A vacuum pump 12 for evacuating the inside is arranged with a vacuum valve 11 interposed, and a pressure gauge 13 for measuring the pressure in the ultrafine particle generation chamber 2 is attached to the upper wall portion. In the ultrafine particle generation chamber 2, a high frequency coil 6 to which electric power is supplied from a high frequency power source 18 arranged outside the conductive wire 7a,
It is connected via 7b. The high frequency coil 6 is formed in a mortar shape with five turns, and from the top to the bottom,
Gradually the diameter is decreasing. The bottom coil has an inner diameter of 30
mm, the diameter of the uppermost coil is 50 mm. The high frequency power supply 18 is a vacuum tube oscillation system of 50 kHz and has an output of 5 kW.

A carrier gas introduction chamber E consisting of a gas introduction pipe 4 is provided at the bottom wall of the ultrafine particle generation chamber 2, and a gas introduction pipe 14 is an argon gas supply source of the carrier gas at this side wall. It is connected to the gas cylinder 17. A vacuum valve 16 capable of freely adjusting the flow rate of gas and a gas flow meter capable of measuring the flow rate of gas from the gas cylinder 17 are connected between the gas introduction pipe 14 and the gas cylinder 17. An annular supporting member 3 made of quartz (alumina may be used; similarly, alumina may be used hereinafter) is attached to the upper portion of the gas introducing pipe 4, and the opening 3a of the supporting member 3 is 4 mm. A cylinder 5 is mounted concentrically with the support member 3 on the upper surface of 3. Support member 3
An iron ingot m, which is a raw material of ultrafine particles, is placed on the top.
In addition, immediately below the inner hole of the support member 3 and the gas introduction pipe 4
A raw material rod 19 made of iron, which is the same material as the raw material for the ultrafine particles
Is housed. The raw material rod 19 has a cylindrical shape with a diameter of 3 mm, and is attached to the push-up device 20 of the supply rod 19 provided on the bottom wall portion of the ultrafine particle generation chamber 2.
0 pushes up the center of the inner hole of the support member 3 in the vertical direction.

The cylinder 5 is arranged concentrically with the inside of the high-frequency coil 6 and has an actual size of 22 mm inside diameter and 26 outside diameter.
The height is 40 mm and the height is 40 mm. The material of the support member 3 is quartz. An evaporation space F defined by the inner peripheral wall and the support member 3 is provided inside the cylinder 5. Above the evaporation space F, an inlet 8 for ultrafine particles, which is one end of the transfer tube 9, is provided. Is provided. As shown in the figure, the introduction port 8 of the carrier pipe 9 is formed so as to be widened at the bottom.

The film forming chamber 21 in which the other end of the transfer pipe 9 is disposed has a pressure gauge 22 for measuring the pressure in the chamber 21 attached to the upper wall thereof, and a vacuum valve 23 interposed in the bottom wall thereof. The vacuum pump 24 is connected. In addition, a Si substrate 25 for forming a film of ultrafine particles is provided inside the film forming chamber 21.

The configuration of the gas deposition apparatus 1 according to the embodiment of the present invention has been described above. Next, its operation will be described.

In this embodiment, there is no evaporation source such as a crucible or a boat in the production chamber 2, and an iron ingot m which is a raw material of ultrafine particles is used.
Is placed on the support member 3 so as to close the inner hole of the support member 3, and 16 g of iron is used. Vacuum valve 11, 2
When 3 is opened, the vacuum pumps 12 and 24 are operated to exhaust the inside of the ultrafine particle generation chamber 2 and the inside of the film forming chamber 21. After exhausting the production chamber 2 to 0.003 Torr (0.4 Pa), the vacuum valve 11 is closed and the operation of the vacuum pump 12 is stopped. Open the gas flow control valve 16 and open the gas cylinder 17.
Argon gas is flown in from 2.4 l / min (atmospheric pressure conversion). On the other hand, the vacuum pump 24 on the film forming chamber 21 side is always maintained in the operated state. As a result, the pressure in the generation chamber 2 is 560 Torr (74 kPa), and the equilibrium state is reached.

Next, the output of the heating power source 18 is maintained at 2 kW, and a current is passed through the high frequency coil 6. The iron ingot m, which is the evaporation raw material, is formed by the magnetic repulsion between the eddy currents due to the induction of the eddy current due to the interlinkage of the magnetic flux generated between the high frequency coil 6 and the iron ingot m.
As shown in, its own weight is supported, and it floats in the air and is heated. After that, when the output of the heating power source 18 is increased to 3 kW, the iron ingot m is melted and has a shape close to a sphere (Fig.
It does not have the spherical shape shown in. Further, hereinafter, the molten iron ingot is referred to as a molten ball M. ) Becomes a supporting member 3
Continue to float at a distance of 1 to 2 mm from the top surface of the. The argon gas supplied from the gas cylinder 17 is supplied to the carrier gas introducing chamber E from the gas introducing pipe 14 and assists the floating of the molten sphere M when passing through the opening 3a of the upper supporting member 3 from here. The surface of the molten ball M that floated 3 minutes after the output of the heating power source 18 was set to 3 kW was 1650 ° C.
Then, due to the surface tension of the molten iron, it becomes a spherical shape with a diameter of about 7 mm, and this shape is maintained. If the temperature of the molten sphere M is further increased, the viscosity of the molten iron decreases, the spherical shape collapses, and droplets pass through the opening 3a of the support member 3 and fall into the gas introduction chamber E. Is.

As shown in FIG. 2, the arrangement of the molten sphere M of the evaporation raw material, the cylinder 5 around it, and the inlet 8 of the carrier pipe 9 on the evaporation space F is such that the iron atoms evaporated from the surface of the molten sphere M are Ultra-fine particles are generated by quenching with argon gas flowing at a high temperature from the bottom to the top at a high speed. The carrier gas promotes the evaporation of iron atoms from the surface of the molten sphere M and serves to form ultrafine iron particles. The evaporated ultrafine particles are mixed with argon gas in the inlet 8 at the upper part of the cylinder 5 to form an aerosol, and the flow of the argon gas is throttled and sucked into the carrier pipe 9, and the ultrafine particles generated together with the flow of the argon gas are generated. Most of the fine particles enter the flow of the transfer pipe 9. Even if the generated ultrafine particles float out of the flow and float in the generation chamber 2, they do not re-enter the evaporation space F (the ultrafine particles in such a state often aggregate). Therefore, the ultrafine particles immediately after the generation of the ultrafine particles and having almost no agglomeration are conveyed to the film forming chamber 21 through the conveying pipe 9, and the deposition film having a dense structure is formed on the substrate 25 by the high speed injection of the aerosol from the thin nozzle. It

In the gas deposition method, 99% of the vaporized atoms can be transported to the film forming chamber 21 and used for deposition (coating) in this way, so that, for example, when used for wiring of an electronic circuit or forming a capacitor. , Film thickness is 10μ
If the coating is smaller than m digit, only 1g
Thousands to tens of thousands of products can be produced with ~ 3g of raw material.

Further, in the case where the film formation is continuously carried out, FIG.
As shown in FIG. 3, the raw material rod 19 made of raw material iron disposed in the carrier gas introduction chamber E immediately below the support member 3 is pushed up by the push-up device 20.
Thus, the material is pushed up immediately above and is inserted into the opening 3a of the support member 3 to be brought into contact with the lower portion of the molten sphere M so that the molten raw material bar 19 is absorbed by the molten sphere M. When the diameter of the raw material rod 19 is 3 mm as in this embodiment, pushing up the raw material rod 19 by 20 mm supplies 1 g of raw material.

At the end of evaporation, if the output of the high frequency power source 18 is lowered, the levitation force becomes smaller, and the molten balls M fall on the support member 3 due to the action of gravity. If the size of the molten sphere M is smaller than the opening 3a of the support member 3, the molten sphere M is not
Fall to E.

Table 1 below shows the purities of the deposited film of ultrafine iron particles prepared by the gas deposition method and apparatus according to this example and the deposited film of ultrafine iron particles prepared by the conventional gas deposition method. Show.

[0028]

[Table 1]

The adhesion strength of the deposited film of ultrafine iron particles prepared by the gas deposition method and apparatus according to this embodiment and the deposited film of ultrafine iron particles prepared by the conventional gas deposition method on the Si substrate was measured. It is shown in Table 2 below. Incidentally, the adhesion strength is not the peeling at the substrate interface, because the films of both the present example and the conventional method break in the film.

[0030]

[Table 2]

The electric resistances of the deposited film of ultrafine iron particles prepared by the gas deposition method and apparatus according to this embodiment and the deposited films of ultrafine iron particles prepared by the conventional gas deposition method are shown in Table 3 below. Shown in.

[0032]

[Table 3]

As can be seen from Tables 1 to 3 above, in this embodiment, the ultrafine iron film has a very high purity and the adhesion strength on the Si substrate is improved by about 30% as compared with the conventional method. Further, the electric resistance thereof is greatly reduced in this embodiment, and the electric conductivity is improved. This improvement in electrical conductivity is greatly contributed by the reduction of impurities in the film and the reduction of impure gas such as O ₂ trapped in a gaseous state in the film.

As described above, according to the method and apparatus for gas deposition of ultrafine particles according to this embodiment, the purity of the ultrafine particle film, the adhesion strength of the deposited film on the substrate, and the electric conductivity of the film are improved. , The quality of the membrane was improved. Further, as compared with the case where iron is melted and evaporated in a normal crucible, the entire surface of the molten sphere M serves as an evaporation surface, so that the evaporation area becomes 5 times and the evaporation efficiency is improved. In this way, the merit of increasing the production amount of high-quality ultrafine particles is aimed at higher quality and higher efficiency of the formed film by gas deposition, and its application fields are expanded to wider fields such as electronics, fine mechanical, and fine chemical. It leads to application.

Although the respective embodiments of the present invention have been described above, needless to say, the present invention is not limited to these, and various modifications can be made based on the technical idea of the present invention.

For example, although the evaporation material is iron in the above embodiments, the present invention can of course be applied to other metals. It can also be applied to ceramics.
However, in this case, it is necessary to heat the ceramics to a predetermined temperature in order to make the ceramics electrically conductive. Therefore, the carrier gas is heated to preheat the ceramics rented to the support member to the predetermined temperature. Therefore, the same method as that of the above-described embodiment may be performed, and the same effect as that of the embodiment can be obtained. In addition, it is necessary to form the gas introduction pipe 4 with quartz or the like so that impurities are not generated by the heated carrier gas.

Furthermore, the present invention can also be applied to polar organic polymers as evaporation materials. In this case, a high-frequency current flows through the coil 6, causing dielectric loss in the evaporation material and heating. 200 for polar organic polymers
Since it decomposes at ℃ ~ 600 ℃ or more, it is necessary to consider not to raise the heating temperature any more. In order to suspend the evaporation material, a carrier gas is blown up from the bottom to the evaporation material to float. Further, since the polar organic polymer has a low evaporation temperature, it is possible to heat the carrier gas and heat the evaporation material by the carrier gas without using induction heating by the coil 6 and the power source 18 for the heating means. it can. Also in this case, in order to float the evaporation material, the carrier gas is jetted upward from the evaporation material to float. Further, it is necessary to form the gas introduction pipe 4 with quartz or the like so that impurities are not generated by the heated carrier gas as described above.

Further, in the above embodiments, the shape of the opening formed in the support member 3 is cylindrical, but if the opening of the support member 3'is made into an inverted conical shape as shown in FIG. The flow efficiently blows up the molten balls from the bottom to the top, and can help the molten balls to float at the center of the coil 6.

[0039]

As described above, according to the method and apparatus for gas deposition of ultrafine particles of the present invention, since ultrafine particles of high purity without aggregation are conveyed into the film forming chamber, a high quality deposited film is produced. It Further, the evaporation area of the evaporation material can be increased, and most of the ultrafine particles evaporated in the ultrafine particle generation chamber are conveyed to the film forming chamber, so that the production efficiency can be increased and a large number of products can be mass produced.

[Brief description of drawings]

FIG. 1 is a schematic front view of a method and apparatus for gas deposition of ultrafine particles according to an embodiment of the present invention.

FIG. 2 is an enlarged front view of the vicinity of a support member, showing a molten sphere M being vaporized by the same ultrafine particle gas deposition method and apparatus.

FIG. 3 is an enlarged front view of the vicinity of a support member showing that the raw material is supplied to the evaporation material.

FIG. 4 is an enlarged front view of a modified example of the support member.

FIG. 5 is a schematic front view showing a gas deposition method according to a conventional example.

FIG. 6 is a schematic front view of the same.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 Gas deposition apparatus 2 Ultrafine particle production chamber 3 Support member 3'Support member 3a Opening 4 Gas introduction pipe 5 Cylinder 6 Coil 8 Gas introduction port 9 Conveying pipe 19 Raw material bar 21 Film forming chamber m Iron ingot

Claims (18)

[Claims] 1. When the evaporation material placed in the ultrafine particle generation chamber is heated, the ultrafine particles evaporated from the evaporation material are conveyed together with a carrier gas into a film forming chamber through a carrier pipe, and into the film forming chamber. In the ultrafine gas deposition method of forming the ultrafine particle film on the arranged substrate, the heating is performed by passing an induction current in the evaporation material formed of a metal mass by passing a high frequency current through a coil. Then
Due to the magnetic repulsive force between the magnetic flux generated in the evaporation material by the induced current and the magnetic flux generated by the high frequency current, the evaporation material is heated and evaporated in a state of being suspended in the carrier gas, A gas deposition method for ultra-fine particles, characterized in that the fine particles are carried into the film forming chamber together with the carrier gas. 2. In order to float the evaporation material in the carrier gas, the carrier gas is caused to flow upward from below to assist the floating of the evaporation material. The method for gas deposition of ultrafine particles according to claim 1. 3. A heating device provided in the ultrafine particle generation chamber for heating an evaporation material, and ultrafine particles heated by the heating device and evaporated from the evaporation material are introduced into the film formation chamber from the ultrafine particle generation chamber. In a gas deposition apparatus for ultrafine particles, which comprises a transport pipe for transporting the gas and a carrier gas introduction pipe for transporting the ultrafine particles into the film forming chamber, the heating device is electrically connected to a high frequency power supply. A support member made of a coil and having an opening formed immediately above the introduction pipe is provided, and a tubular member is provided on the support member and inward of the coil, and the transfer member is provided above the tubular member. A gas deposition apparatus for ultrafine particles, characterized in that a gas introduction port of a tube is provided, and the evaporation material made of a metal mass is induction-heated in the cylindrical member. 4. The gas of ultrafine particles according to claim 3, wherein a material rod made of the same material as the evaporation material is supplied in contact with the evaporation material suspended in the tubular member. Deposition device. 5. The gas deposition apparatus according to claim 3, wherein the opening of the support member has an inverted conical shape. 6. When the evaporation material placed in the ultrafine particle generation chamber is heated, the ultrafine particles evaporated from the evaporation material are conveyed to the film forming chamber together with a carrier gas into the film forming chamber, and into the film forming chamber. In the method of gas deposition of ultra-fine particles for forming a film of the ultra-fine particles on an arranged substrate, the evaporation material is made of ceramics, and the evaporation is made of the ceramics by heating the carrier gas to a predetermined temperature. The material is heated by the carrier gas to make it conductive, and a high-frequency current is passed through the coil to cause an induction current to flow in the evaporation material made of the ceramic to heat the material, and the induction current causes the evaporation material to be generated in the evaporation material. By magnetic repulsion between the magnetic flux and the magnetic flux due to the high frequency current, the evaporation material is heated in a state of being suspended in the carrier gas,
A method for gas deposition of ultra-fine particles, characterized in that the ultra-fine particles that are vaporized and transported from the evaporation material are transported into the film forming chamber together with the transport gas. 7. The floatation of the evaporation material in the carrier gas is facilitated by allowing the carrier gas to flow out from below the evaporation material to above the evaporation material. The method for gas deposition of ultrafine particles according to claim 6. 8. A heating device provided in the ultrafine particle generation chamber for heating an evaporation material, and ultrafine particles heated by the heating device and evaporated from the evaporation material are introduced into the film formation chamber from the ultrafine particle generation chamber. In the gas deposition apparatus for ultra-fine particles, which comprises a transport pipe for transporting the gas and a carrier gas introduction pipe for transporting the ultra-fine particles into the film forming chamber, the heating device is electrically connected to a high-frequency power source. A support member made of a coil and having an opening formed immediately above the introduction pipe is provided, and a tubular member is provided on the support member and inward of the coil, and the transfer member is provided above the tubular member. A gas introduction port of a tube is provided, heating means for heating the carrier gas to a predetermined temperature is provided, and the evaporation material made of ceramics is induction-heated in the tubular member. Gas depot Equipment. 9. The gas of ultrafine particles according to claim 8, wherein a material rod made of the same material as the evaporation material is supplied in contact with the evaporation material suspended in the tubular member. Deposition device. 10. The gas deposition apparatus for ultrafine particles according to claim 8, wherein the opening of the support member has an inverted conical shape. 11. When the evaporation material placed in the ultrafine particle generation chamber is heated, the ultrafine particles evaporated from the evaporation material are conveyed to the film forming chamber together with the carrier gas in the film forming chamber. In the ultrafine particle gas deposition method of forming the ultrafine particle film on the arranged substrate, the heating heats the evaporation material made of a polar organic polymer material by dielectric loss by applying a high frequency current to a coil. Then, the ultrafine particles vaporized by heating and evaporating in a state of being suspended in the carrier gas, and the ultrafine particles evaporated from the evaporation material are carried into the film forming chamber together with the carrier gas. 12. A heating device provided in the ultrafine particle generation chamber for heating an evaporation material, and ultrafine particles heated by the heating device and evaporated from the evaporation material are introduced into the film forming chamber from the ultrafine particle generation chamber. In a gas deposition apparatus for ultrafine particles, which comprises a transport pipe for transporting the gas and a carrier gas introduction pipe for transporting the ultrafine particles into the film forming chamber, the heating device is electrically connected to a high frequency power supply. A support member made of a coil and having an opening formed immediately above the introduction pipe is provided, and a tubular member is provided on the support member and inward of the coil, and the transfer pipe is provided above the tubular member. A gas introducing port is provided, the evaporation material made of a polar organic polymer material is heated in the cylindrical member by dielectric loss, and a carrier gas is jetted from below to float. Fine particle moth Deposition device. 13. The gas deposition of ultrafine particles according to claim 12, wherein a material rod made of the same material as the evaporation material is supplied in contact with the evaporation target material suspended in the tubular member. apparatus. 14. The gas deposition apparatus for ultrafine particles according to claim 12, wherein the opening of the support member has an inverted conical shape. 15. When the evaporation material placed in the ultrafine particle generation chamber is heated, the ultrafine particles evaporated from the evaporation material are conveyed to the film forming chamber together with the carrier gas into the film forming chamber and into the film forming chamber. In the ultrafine particle gas deposition method for forming the ultrafine particle film on the arranged substrate, the evaporation material is a polar organic polymer material, and the carrier gas is heated to a predetermined temperature by heating means. The evaporation material made of the polar organic polymer material is heated by the carrier gas, and the carrier gas is allowed to flow upward and downward to heat and evaporate the evaporation material in a suspended state. And carrying the ultrafine particles evaporated from the evaporation material together with the carrier gas into the film forming chamber. 16. A heating device provided in the ultrafine particle generation chamber for heating the evaporation material, and a transfer pipe for introducing the ultrafine particles heated by the heating device and evaporated from the evaporation material into the film forming chamber. In the gas deposition apparatus for the ultrafine particles, which is provided with an introduction pipe of a carrier gas for conveying the ultrafine particles into the film forming chamber in the ultrafine particle generation chamber, an opening is formed immediately above the introduction pipe. A support member is provided, a tubular member is provided on the support member, a gas introduction port of the carrier pipe is provided in an upper portion of the tubular member, and heating means for heating the carrier gas to a predetermined temperature is provided. A gas deposition apparatus for ultrafine particles, characterized in that the evaporation material made of a polar organic polymer material is heated in the cylindrical member and floated from the support member. 17. The gas deposition of ultrafine particles according to claim 16, wherein a material rod made of the same material as the evaporation material is supplied in contact with the material to be evaporated suspended in the tubular member. apparatus. 18. The gas deposition apparatus for ultrafine particles according to claim 16, wherein the opening of the support member has an inverted conical shape.