JPH0625005Y2 - Pressure contact type semiconductor device - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION [Industrial application] The present invention does not fix a semiconductor substrate having a pn junction or a rectifying junction such as a Schottky barrier to a support plate having a thermal expansion coefficient similar to that of a semiconductor. The present invention relates to a pressure-contact type semiconductor device which is housed in a flat container composed of an insulating ring and electrode bodies fixed to both end faces of the insulating ring via flexible portions and which brings a semiconductor substrate and a support plate into contact with each other by pressure from outside the container.

[Conventional technology]

When a semiconductor substrate and a supporting plate having a thermal expansion coefficient similar to that of a semiconductor such as molybdenum or tungsten are fixed,
Since the coefficients of thermal expansion do not completely match, the semiconductor substrate may be distorted due to temperature changes during the manufacturing process or during use, which may affect the characteristics. Therefore, as shown in FIG. 2, the semiconductor substrate 4 and the upper and lower Mo support plates 5 are placed in a flat container composed of the insulating ring 1 and the deformable thin metal ring 2 and the upper and lower electrode bodies 3. Accommodate, both electrode body 3
It is known that the substrate 4 and both support plates 5 and each support plate 5 and the upper and lower electrode bodies 3 are brought into pressure contact with each other by a pressing force applied to. At this time, it is also known that the periphery of the semiconductor substrate 4 and the supporting plates 5 are surrounded by an insulating ring 6 made of a fluororesin or the like in order to prevent displacement in a direction parallel to the plate surfaces.

[Problems to be solved by the invention]

However, in such a semiconductor device, since the substrate 4 and the supporting plate 5 move vertically in the container when no pressure is applied between the electrode bodies 3, the semiconductor substrate 4 causes the supporting plate 5 to move due to vibration during transportation. It collides with and is damaged such as chipping,
There was a drawback that the characteristics were impaired.

Except for the above-mentioned drawbacks, the present invention does not cause damage to the semiconductor substrate even if a mechanical force is applied from the outside in a state where the pressure contact between the members is not made by the pressure between the electrode bodies. An object is to provide a semiconductor device.

[Means for solving problems]

In order to achieve the above object, the present invention provides a first and second container in a container, which includes an insulating ring and first and second electrode bodies fixed to both end surfaces of the insulating ring through flexible portions. The semiconductor substrate sandwiched between the support plates is housed, and the semiconductor substrate and the support plate and the support plate and the electrode body are brought into pressure contact with each other by the pressure applied between the electrode bodies from the outside of the container. , At least one notch is formed all around the outer peripheral edge of the second support plate in the insulating ring direction, and the semiconductor substrate and the support plate are stretchable and insulative to limit displacement in a direction perpendicular to the plate surface of the support plate. It is assumed that the annular resin body is surrounded by the annular resin body having the property, and the annular resin body makes circumferential contact with the outer peripheral edge and the notch of the support plate and the outer peripheral edge of the semiconductor substrate.

[Action]

Since the resin body makes circumferential contact with the outer peripheral edge of the support plate and the notches formed on the entire circumference to limit the vertical movement of the support plate, the semiconductor substrate is supported by the support plate even if mechanical force is applied during transportation. It does not collide strongly with and there is no risk of damage. Further, since the resin body has an insulating property, there is no possibility of short circuit between the support plate or the electrode body, and since the resin body has elasticity, the contact between the substrate and the support plate is not hindered by the pressure between the electrode bodies.

〔Example〕

1 (a) and 1 (b) show an embodiment of the present invention, and FIG.
The silicon substrate 4 having a diameter of 60 mm as shown in
Although not shown, a Mo layer is deposited on one surface at 300 μm to form a Schottky barrier, and two Mo support plates 5 are formed via an Al foil.
It is sandwiched between. The Mo support plate 5 has a step 51 because the diameter on the side opposite to the substrate is reduced. An annular insulator 7 is in close contact with the outer peripheries of both support plates 5 and silicon substrate 4. The ring-shaped insulator 7 may have a thickness of about 5 mm and may be simply wrapped around a supporting plate with a sealing tape made of tetrafluoroethylene resin such as Teflon under the trade name of DuPont or Nitoflon under the trade name of Nitto Denka Co., Ltd. A flexible silicone rubber tube may be fitted, or a silicone rubber ring may be extended and fitted. Since the supporting plate 5 has a step, the wound insulating tape or the fitted insulating ring does not shift in the thickness direction of the supporting plate.

FIG. 1 (b) shows a state in which the silicon substrate 4 and the support plate 5 thus integrated are housed in the same flat container as in the case of FIG.

3 (a) and 3 (b) show another embodiment. In this case, a silicon substrate 4 and a Mo support plate 5 having steps 51 formed on both sides are divided into two semicircular portions. A tetrafluoroethylene resin ring 7 is fitted. As a result, the silicon substrate 4 and the support plate 5 are positioned and fixed. In this case, there is an advantage that the mounting is easier than fitting a circular annular body.

[Effect of device]

According to the present invention, a semiconductor substrate housed in a flat container and supporting plates on both sides are positioned and fixed by a stretchable and insulative annular resin body surrounding the outer periphery, and pressure is applied between both electrode bodies. Even if there is vibration in the vertical direction of the container during transportation, etc., the collision due to the change in the relative position of the semiconductor substrate and the support plate is prevented, and the substrate is protected from the collision with the container. And a highly reliable semiconductor device can be obtained.

[Brief description of drawings]

1 (a) and 1 (b) show an embodiment of the present invention, (a) is a sectional view after assembling a semiconductor substrate and a supporting plate, (b) is a sectional view after being assembled in a container, and FIG. Sectional view of the semiconductor device of FIG.
FIG. 7B is a sectional view of the semiconductor substrate and the support plate according to another embodiment of the present invention after assembling, and FIG. 1: Insulating ring, 3: Electrode body, 4: Silicon substrate, 5: Mo support plate, 7: Ring insulator.

Claims (1)

[Scope of utility model registration request] 1. A first and a second support plates sandwiched in a container composed of an insulating ring and first and second electrode bodies fixed to both end surfaces of the insulating ring via flexible portions. Insulation of the first and second support plates in which the semiconductor substrate is housed and the semiconductor substrate and the support plate and the support plate and the electrode body are in pressure contact with each other due to the pressure applied from the outside of the container between the two electrode units. At least one notch is formed all around the outer peripheral edge in the ring direction,
The semiconductor substrate and the support plate are surrounded by a ring-shaped resin body having elasticity and insulation which limits displacement in a direction perpendicular to the plate surface of the support plate, and the ring-shaped resin body forms an outer peripheral end and a notch of the support plate. A pressure contact type semiconductor device, which is in contact with an outer peripheral edge of a semiconductor substrate.