JPH06244301A - Package for containing semiconductor element - Google Patents

Abstract

PURPOSE:To prevent a power supply noise to a semiconductor element by providing a recess for containing a capacitive element on the external surface of an insulated container of a sintered substance of aluminium nitride, and forming connecting pads on the bottom so that part of them is buried in the insualted container. CONSTITUTION:A recess 1a is formed in the upper surface of an insulating substrate 1 made of a sintered substance of aluminium nitride, and a semicondutor element 3 is bonded and fixed to the bottom surface by glass, resin, a brazing material or the like. Further, a recess 1b is formed in the upper surface of the insulating substrate 1, and on the bottom surface, connecting pads 5a are formed which connect to the power supply and ground electrode of the semiconductor element 3 through the inside of the insulating substrate 1, and a capacitive element 8 is contained and bonded to the connecting pads 5a by a brazing material such as solder. Due to the insulated container of the sintered substance of aluminium nitride, good heat dissipation is provided, thereby enabling the semiconductor element to normally and stably operate for a long period of time. In addition, since the capacitive element is contained in the recess in the external surface of the insulated container, the capacitive element is not removed from the connecting pads by an external force, whereby the adverse effect by a power supply noise can effectively be prevented.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor element accommodating package for accommodating semiconductor elements, and more particularly to a semiconductor for effectively preventing adverse effects of power source noise on semiconductor elements accommodated inside. The present invention relates to an element storage package.

[0002]

2. Description of the Related Art Conventionally, as shown in FIG. 3, a semiconductor element accommodating package for accommodating a semiconductor element is made of an aluminum oxide sintered body and has a concave portion 11a for accommodating the semiconductor element 10 and an upper surface thereof. An insulating substrate 11 having a metallized wiring layer 12 made of a refractory metal powder such as tungsten, molybdenum, or manganese, which is led out from the periphery of the recess 11a to the lower surface, and the metallized wiring for connecting each electrode of the semiconductor element 10 to an external electric circuit. It is composed of an external lead terminal 13 attached to the layer 12 via a brazing material such as silver solder, and a lid 14, and the semiconductor element is provided on the bottom surface of the recess 11a of the insulating base 11.
10 is adhered and fixed through an adhesive such as glass, resin, or a brazing material, and each electrode is electrically connected to the metallized wiring layer 12 through a bonding wire 15, and thereafter, a lid is provided on the upper surface of the insulating base 11. A semiconductor device is obtained as a product by bonding 14 together with a sealing material such as glass, resin, a brazing material, etc., and hermetically sealing the semiconductor element 10 inside a container composed of the insulating base 11 and the lid 14.

Incidentally, such a conventional semiconductor element housing package is a semiconductor element housed inside the upper surface of the insulating base 11.
A connection pad 16 connected to the power supply electrode 10 and the ground electrode 10 is formed, and a capacitor element 17 having a barium titanate porcelain as a dielectric is directly attached to the connection pad 16 via a brazing material such as solder. By connecting the capacitive element 17 between the power supply electrode and the ground electrode of the semiconductor element 10, the adverse effect of power supply noise on the semiconductor element 10 is effectively prevented.

However, in this conventional semiconductor element housing package, the insulating substrate 11 for housing the semiconductor element 10 is made of an aluminum oxide sintered body, and its thermal conductivity is 15 W /
It is as low as m · K, and recently, the semiconductor element 10 has a higher density,
Due to the rapid progress of high integration, the amount of heat generated per unit area and unit volume of the semiconductor element 10 has increased.
After the semiconductor element 10 is housed in the recess 11a of 11 to form a semiconductor device, when the semiconductor element 10 is operated, the semiconductor element 10 has a high temperature due to the thermal expansion coefficient of the element 10 itself,
The semiconductor element 10 has the drawback of causing thermal breakdown or causing a thermal change in its characteristics to cause a malfunction.

Therefore, in order to solve the above-mentioned drawbacks, an insulating substrate
11 is replaced with aluminum oxide sintered body and the thermal conductivity is 50 W /
The heat generated by the semiconductor element 10 is formed by an aluminum nitride sintered body that is extremely easy to transfer heat at m.
It is thought that it can be satisfactorily diffused into the atmosphere via.

[0006]

However, when the insulating substrate 11 is formed of an aluminum nitride sintered body, the thermal expansion coefficient of the aluminum nitride sintered body is 4 to 5 × 10 ^-6 / ° C.
And the thermal expansion coefficient (10 to 11 × 10 ⁻⁶ / ° C.) of the barium titanate porcelain constituting the capacitive element 17 is greatly different, and therefore the connection pad 16 provided on the insulating substrate 11 made of an aluminum nitride sintered body is used. When the capacitive element 17 is attached to the insulating substrate 11 via the brazing material, a large thermal stress is generated between the insulating base 11 and the capacitive element 17 due to the difference in the thermal expansion coefficient between the two. There is a drawback that the bonding strength between the insulating substrate 11 and the connection pad 16 is reduced by being inherent in the bonding portion of 16. Therefore, in this package, when an external force is applied to the capacitive element 17, the capacitive element 17 is connected to the connection pad by the external force.
This causes a defect that it easily comes off from the insulating substrate 11 together with 16, and the capacitive element 17 cannot effectively prevent the adverse effect of power source noise on the semiconductor element 10.

[0007]

SUMMARY OF THE INVENTION The present invention has been devised in view of the above-mentioned drawbacks, and its purpose is to effectively prevent the influence of heat and power supply noise on a semiconductor element, and to keep the semiconductor element normal for a long period of time, and An object of the present invention is to provide a package for accommodating semiconductor devices, which can be operated stably.

[0008]

SUMMARY OF THE INVENTION The present invention provides an insulating container made of an aluminum nitride sintered body having a cavity for accommodating a semiconductor element therein, and a power supply electrode and a ground electrode of the semiconductor element accommodated therein. A package for accommodating a semiconductor element, comprising a connection pad to be connected and a capacitance element attached to the connection pad, wherein a recess for accommodating the capacitance element is provided on the outer surface of the insulating container, and a bottom surface of the recess is provided. The connection pad is formed in a state where a part of the connection pad is embedded in an insulating container.

[0009]

According to the package for accommodating a semiconductor element of the present invention, since the insulating container is made of the aluminum nitride sintered body, the heat generated during the operation of the semiconductor device is well dissipated into the atmosphere through the container. As a result, the semiconductor element housed inside the container is always at a low temperature, and the semiconductor element can be operated normally and stably for a long period of time.

Further, since the capacitive element is housed in the concave portion provided on the outer surface of the insulating container, and a part of the connection pad is embedded in the insulating container, it is effective that external force is applied to the capacitive element. In addition, the joint between the connection pad and the insulating container is reinforced and strengthened, and as a result, the capacitive element is firmly attached to the insulating container, and the capacitive element effectively prevents the adverse effect of power supply noise on the semiconductor element. Can be prevented.

[0011]

The present invention will now be described in detail with reference to the accompanying drawings.

1 and 2 show an embodiment of a package for housing a semiconductor device according to the present invention, in which 1 is an insulating base and 2 is a lid. The insulating base 1 and the lid 2 form a container 4 for housing the semiconductor element 3. The insulating substrate 1 is made of an aluminum nitride sintered body, and has a concave portion 1a for forming a space for accommodating the semiconductor element 3 on the upper surface thereof, and the semiconductor element 3 is made of glass, resin or the like on the bottom surface of the concave portion 1a. It is adhesively fixed through an adhesive such as a brazing material.

The insulating substrate 1 made of the aluminum nitride sintered body is, for example, an organic solvent suitable for a raw material powder such as aluminum nitride (AlN), yttria (Y ₂ O ₃ ), calcia (CaO), magnesia (MgO). A ceramic green sheet (ceramic green sheet) is obtained by adding and mixing a solvent to form a slurry, and adopting the conventionally known doctor blade method, canender roll method, etc. It is manufactured by performing appropriate punching, stacking multiple sheets, and baking at high temperature (about 1800 ℃).

Since the insulating substrate 1 made of the aluminum nitride sintered body has a thermal conductivity of 50 W / m · K or more and is easy to transfer heat, even if the semiconductor element 3 generates a large amount of heat during operation. The heat is satisfactorily dissipated into the atmosphere through the insulating substrate 1, and as a result, the semiconductor element 3 never rises in temperature due to the heat generated by the element 3 itself, and the semiconductor element 3 is not destroyed by thermal destruction or characteristics. It will not change and cause malfunctions.

A plurality of metallized wiring layers 5 are deposited on the insulating substrate 1 from the periphery of the recess 1a to the lower surface, and the electrodes of the semiconductor element 3 (power supply) are formed in the periphery of the recess 1a of the metallized wiring layer 5. (Electrode, ground electrode, signal electrode) are electrically connected via the bonding wire 6, and the external lead terminal 7 connected to an external electric circuit is connected to an external electric circuit at a portion led out to the lower surface of the insulating substrate 1. It is attached via brazing material.

The metallized wiring layer 5 is made of tungsten,
A metal paste made of a refractory metal powder such as molybdenum or manganese, which is obtained by adding and mixing an appropriate organic solvent or a solvent to the refractory metal powder such as tungsten is previously known to the ceramic green sheet serving as the insulating substrate 1. By printing and applying a predetermined pattern by the screen printing method, the insulating substrate 1 is deposited from around the recess 1a to the lower surface.

The metallized wiring layer 5 is formed by depositing a metal such as nickel and gold, which has excellent corrosion resistance and has a good wettability with a brazing material, on the exposed surface by plating to a thickness of 1.0 to 20.0 μm. The metallized wiring layer 5 can be effectively prevented from being oxidized and corroded.
And bonding wire 6 and metallized wiring layer
It is possible to firmly attach the external lead terminal to 5. Therefore, the oxidation corrosion of the metallized wiring layer 5 is prevented,
To strengthen the attachment of the metallized wiring layer 5 to the bonding wires 6 and the external lead terminals 7, the metallized wiring layer
It is preferable to deposit nickel, gold or the like on the exposed surface of layer 5 in a thickness of 1.0 to 20.0 μm.

The external lead terminals 7 attached to the metallized wiring layer 5 via a brazing material such as silver braze are metal materials such as Kovar metal (iron-nickel-cobalt alloy) and 42 alloy (iron-nickel alloy). Consisting of an external lead terminal
Each electrode of the semiconductor element 3 housed in the recess 1a of the insulating substrate 1 by connecting 7 to the external electric circuit is electrically connected to the external electric circuit via the metallized wiring layer 5 and the external lead terminal 7. It will be.

The external lead terminal 7 is formed in a predetermined shape by adopting a conventionally known metal working method such as a rolling working method or a punching working method for an ingot (lump) of Kovar metal or the like.

Further, when the external lead terminal 7 is formed by depositing a metal such as nickel or gold, which has excellent corrosion resistance and has good wettability with the brazing material, to a thickness of 1.0 to 20.0 μm by plating. Oxidation and corrosion of the external lead terminals 7 can be effectively prevented, and the external lead terminals 7 can be firmly connected to an external electric circuit via a brazing material such as solder. Therefore, it is preferable that the exposed surface of the external lead terminal 7 is layered with nickel, gold or the like in a thickness of 1.0 to 20.0 μm.

The insulating base 1 also has a recess 1b formed on the upper surface thereof as shown in FIG. 2, and the bottom surface of the recess 1b extends from the inside of the insulating base 1 to provide a power electrode and a ground electrode for the semiconductor element 3. A connection pad 5a electrically connected to is formed.

The capacitive element 8 is attached and housed in the concave portion 1b of the insulating substrate 1 by joining its electrode to the connection pad 5a via a brazing material such as solder.
8 is connected between the power supply electrode and the ground electrode of the semiconductor element 3.

Since the capacitance element 8 is housed in the recess 1b of the insulating substrate 1, almost no external force is applied to the capacitance element 8, and the capacitance element 8 is connected to the connection pad by the external force application.
It is effectively prevented from deviating from 5a.

Further, the connection pad 5a to which the capacitance element 8 is joined extends from the insulating base 1 and is partially embedded in the insulating base 1, so that the capacitance element 8 is connected to the connection pad 5a via a brazing material. When they are attached together, a large thermal stress is generated between the insulating base 1 and the capacitive element 8 due to the difference in the thermal expansion coefficient between them, and this causes internal insulation at the joint between the insulating base 1 and the connection pad 8. Even if the bonding strength between the base 1 and the connection pad 8 is reduced, the bonding strength is reinforced and becomes extremely strong. As a result, even if an external force is applied to the capacitive element 8, the capacitive element 8 is insulated together with the connection pad 5a. It does not come off from the base 1, and the capacitive element 8 can effectively prevent the adverse effect of power source noise on the semiconductor element 3.

The concave portion 1b for accommodating the capacitive element 8 is formed by forming a hole in the ceramic green sheet to be the insulating substrate 1 in advance by a punching method.
1 is formed on the upper surface, and the connection pad 5a is made of a refractory metal powder such as tungsten, molybdenum, or manganese.
It is formed in a predetermined shape on the bottom surface of the concave portion 1b of 1.

The capacitive element 8 attached to the connection pad 5a is formed, for example, by embedding a large number of counter electrodes in a barium titanate porcelain, and the capacitive element 8 supplies the semiconductor element 3 causing malfunction. It acts to eliminate power supply noise caused by fluctuations in the power supply voltage, which allows the semiconductor element 3
Is protected from the adverse effects of power supply noise and can operate normally and stably for a long period of time.

Thus, according to the package for accommodating semiconductor elements of the present invention, the semiconductor element 3 is adhered and fixed to the bottom surface of the concave portion 1a of the insulating substrate 1 through an adhesive such as glass, resin, or brazing material, and each electrode of the semiconductor element 3 is attached. Are electrically connected to the metallized wiring layer 5 via bonding wires 6, and then the lid 2 is bonded to the upper surface of the insulating substrate 1 via a sealing material made of glass, resin, brazing material, etc. Base 1 and lid
A semiconductor device as a product is completed by hermetically housing the semiconductor element 3 in a container 4 composed of 2 and.

The present invention is not limited to the above-mentioned embodiments, and various modifications can be made without departing from the gist of the present invention.

[0029]

According to the package for housing a semiconductor device of the present invention, since the insulating container is made of an aluminum nitride sintered material, the heat generated during the operation of the semiconductor device is well dissipated into the atmosphere through the container. As a result, the temperature of the semiconductor element housed inside the container is always low, and the semiconductor element can be operated normally and stably for a long period of time.

Further, the capacitive element is housed in the concave portion provided on the outer surface of the insulating container to effectively prevent the external force from being applied to the capacitive element, and a part of the connection pad to which the capacitive element is connected is insulated from the insulating container. Since the connection between the connection pad and the insulating container was reinforced by embedding it in the inside, external force was applied to the capacitive element, and the capacitive element and the connection pad did not come off from the insulating container at all. It is possible to effectively prevent the adverse effect of power supply noise.

[Brief description of drawings]

FIG. 1 is a cross-sectional view showing an embodiment of a semiconductor element housing package of the present invention.

FIG. 2 is an enlarged cross-sectional view of a main part of the package shown in FIG.

FIG. 3 is a cross-sectional view of a conventional semiconductor element housing package.

[Explanation of symbols]

 1 ... Insulating substrate 1b ... Recess 2 ... Lid 3 ... Semiconductor element 4 ... Container 5 ... Metallized wiring layer 5a ... Connection pad 7 ...・ External lead terminal 8 ・ ・ ・ ・ Capacitance element

Claims (1)

[Claims] 1. An insulating container made of an aluminum nitride sintered body having a cavity for housing a semiconductor element therein.
A package for storing a semiconductor element, which is formed by forming a connection pad connected to a power electrode and a ground electrode of a semiconductor element housed inside and mounting a capacitance element on the connection pad, the package being provided on an outer surface of the insulating container A package for storing a semiconductor element, characterized in that a concave portion for accommodating a capacitive element is provided and a connection pad is formed on a bottom surface of the concave portion with a part thereof embedded in an insulating container.