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JPH06120374A - Semiconductor package structure, semicon- ductor packaging method and heat sink for semiconductor package - Google Patents

Semiconductor package structure, semicon- ductor packaging method and heat sink for semiconductor package

Info

Publication number
JPH06120374A
JPH06120374A JP5090929A JP9092993A JPH06120374A JP H06120374 A JPH06120374 A JP H06120374A JP 5090929 A JP5090929 A JP 5090929A JP 9092993 A JP9092993 A JP 9092993A JP H06120374 A JPH06120374 A JP H06120374A
Authority
JP
Japan
Prior art keywords
heat sink
semiconductor package
dissipation plate
heat dissipation
chip
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP5090929A
Other languages
Japanese (ja)
Inventor
Steve P Lerner
スティーブ・ピー・レーナー
David S Razu
ディビッド・エス・ラズ
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Amkor Electronics Inc
Original Assignee
Amkor Electronics Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Amkor Electronics Inc filed Critical Amkor Electronics Inc
Publication of JPH06120374A publication Critical patent/JPH06120374A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
    • H01L21/565—Moulds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/42—Fillings or auxiliary members in containers or encapsulations selected or arranged to facilitate heating or cooling
    • H01L23/433—Auxiliary members in containers characterised by their shape, e.g. pistons
    • H01L23/4334—Auxiliary members in encapsulations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/0555—Shape
    • H01L2224/05552—Shape in top view
    • H01L2224/05554—Shape in top view being square
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/4912—Layout
    • H01L2224/49171—Fan-out arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01014—Silicon [Si]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01078—Platinum [Pt]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/14—Integrated circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)

Abstract

PURPOSE: To provide an electronic device package, which has high heat emissivity and is low cost by using a simple 'drop-in' system. CONSTITUTION: A package having a heat radiation plate 400 is made of oxygen- free steel with a high thermal conductivity and has one surface which is exposed to the outside of the package. A 'drop-in' type heat radiation plate is applied to a large number of leads and even to a chip of any size. The heat radiation plate has fins 404 for automatic matching, a slot 403 which increases the flowability of a sealant which reinforces the connection between the heat radiation plate and the sealant, and at least one rough surface which fixes the heat radiation plate and prevents entry of impurities. The exposed surface of the heat radiation plate, which prevents the sealant from bleeding and burring on the surface of the heat radiation plate which should be exposed, is pressed strongly against the bottom surface of a mold cavity by the difference between the height of the heat radiation plate and a lead frame and the depth of the corresponding mold cavity.

Description

【発明の詳細な説明】Detailed Description of the Invention

【０００１】[0001]

【産業上の利用分野】本発明は、電子デバイスパッケー
ジに関し、特に放熱板を有する半導体パッケージ構造に
関する。更に、本発明は、放熱板の表面がパッケージの
外側に露出される「ドロップイン」方式による放熱板を
有するパッケージ構成に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an electronic device package, and more particularly to a semiconductor package structure having a heat sink. Further, the present invention relates to a package structure having a "drop-in" type heat sink in which the surface of the heat sink is exposed to the outside of the package.

【０００２】[0002]

【従来の技術】初期の半導体のパッケージでは、集積回
路は金属缶の内部またはセラミック製の基板及び蓋の間
にパッケージされていた。金属及びセラミックによる封
入材は、両者とも熱伝導性には優れているが、パッケー
ジ技術に関しコスト高であり、製作に時間をも要してい
た。例えば、セラミックによるパッケージに於て使用さ
れている２個のセラミック製基板は、製品を製造するコ
ストのかなりの割合を占めていた。In early semiconductor packages, integrated circuits were packaged inside metal cans or between ceramic substrates and lids. Although both the metal and ceramic encapsulants have excellent thermal conductivity, they are costly in terms of packaging technology and require time to manufacture. For example, the two ceramic substrates used in ceramic packaging accounted for a significant portion of the cost of manufacturing the product.

【０００３】半導体の生産量が増加するにつれ、より低
コストのパッケージの必要性が高まり、数種の新しいパ
ッケージ方法が開発されてきた。最も知られたものとし
ては、樹脂モールドによるパッケージであった。しかし
ながら、樹脂によるパッケージは、多大なコスト費用の
縮小には効果的であったが、金属またはセラミックを使
用した際の優れた熱伝導性には欠けていた。集積回路の
速度及び密度が増加するにつれて、より優れた熱伝導性
（即ち、優れた熱放射性）の必要性が徐々に重要になっ
てきた。この必要性が、半導体のチップ領域から熱を取
り除く金属製ヒートシンクをパッケージ内に包括すると
いう考えに結びついた。As the production of semiconductors has increased, the need for lower cost packages has increased, and several new packaging methods have been developed. The most known one is a resin mold package. However, although the resin package was effective in greatly reducing the cost and cost, it lacked the excellent thermal conductivity when using metal or ceramic. As the speed and density of integrated circuits has increased, the need for better thermal conductivity (ie, better thermal emissivity) has become increasingly important. This need has led to the idea of including a metal heat sink in the package that removes heat from the semiconductor chip area.

【０００４】この考えに基づく熱放射の改良の試みが幾
つか行われてきたが、最も一般的なのは、パッケージ内
に放熱板を合体させるものであった。放熱板は一般的に
はアルミニウム製であった。図１Ａ及び図１Ｂはそれぞ
れ従来技術の放熱板１００の平面図及び側面図である。
放熱板１００のチップ取着パッド取着面１０１は、基板
表面１００ａ上に、台状に周囲より高くなっている。脚
部１０２は基板表面１００ａとは反対側の基板面１００
ｂから突出している。貫通孔１０３が放熱板１００の外
周近くに形成されている。Although several attempts have been made to improve heat radiation based on this idea, the most common one is to incorporate a heat sink in the package. The heat sink was generally made of aluminum. 1A and 1B are a plan view and a side view of a conventional heat sink 100, respectively.
The chip attachment pad attachment surface 101 of the heat sink 100 is trapezoidally higher than the surroundings on the substrate surface 100a. The leg portion 102 is provided on the substrate surface 100 opposite to the substrate surface 100a.
It projects from b. A through hole 103 is formed near the outer circumference of the heat dissipation plate 100.

【０００５】図２は、リードフレーム２２１上に取着し
ている半導体チップ２２０の平面図である。リードフレ
ーム２２１は、フレーム２０１と、リード２２１ａと、
タイバー（tie bars）２０２と、そしてチップ取着パッ
ド２２１とから構成されている。孔２４１は、フレーム
２０１内に間隔を置いて形成されている。チップ取着パ
ッド２２２は、リードフレーム２２１の中心に形成され
ている。チップ２２０はチップ取着パッド２２２の表面
２２２ｂに取着されている。タイバー２０２は、チップ
取着パッド２２２をフレーム２０１に連結している。タ
イバーダウンセット（tie bar downsets）２０５によ
り、タイバー２０２に屈曲性を与えている。リード２２
１ａは、チップ取着パッド２２１の外周部の全周に亘っ
て形成されている。リード２２１ａは、フレーム１から
チップ取着パッド２２２に向けて延在しているが、リー
ド２２１ａは、パッド２２２に接触はしていない。この
ため、完成したパッケージ内ではリード２２１ａは、チ
ップ取着パッド２２２から絶縁されている。この絶縁状
態は、集積回路の封入終了後に、フレーム２０１を切断
してリード２２１ａとタイバー２０２を非接続状態にす
ることにより達成される。ボンド線（bond wires）２２
３は、チップ２２０上の集積回路からパッケージ外の電
子要素への電気的接続を提供するべく各リード２２１ａ
の内側の末端を、選択されたチップ接触パッド２０３に
連結している。FIG. 2 is a plan view of the semiconductor chip 220 mounted on the lead frame 221. The lead frame 221 includes a frame 201, leads 221a,
It is composed of tie bars 202 and a chip attachment pad 221. The holes 241 are formed in the frame 201 at intervals. The chip attachment pad 222 is formed at the center of the lead frame 221. The chip 220 is attached to the surface 222b of the chip attachment pad 222. The tie bar 202 connects the chip attachment pad 222 to the frame 201. The tie bar downsets 205 give the tie bar 202 flexibility. Lead 22
1a is formed over the entire circumference of the outer peripheral portion of the chip attachment pad 221. The lead 221 a extends from the frame 1 toward the chip attachment pad 222, but the lead 221 a does not contact the pad 222. Therefore, the lead 221a is insulated from the chip attachment pad 222 in the completed package. This insulation state is achieved by cutting the frame 201 and disconnecting the lead 221a and the tie bar 202 after the completion of encapsulation of the integrated circuit. Bond wires 22
3 each lead 221a to provide electrical connection from the integrated circuit on the chip 220 to electronic components outside the package.
The inner end of the is connected to the selected tip contact pad 203.

【０００６】図３は、モールド３００のモールドキャビ
ティ３１０内に配置された放熱板１００、リードフレー
ム２２１、及びチップ２２０の断面図を示している。集
積回路を放熱板と共に封入する方法に於て、放熱板１０
０は、モールドキャビティ３１０内に脚部１０２が表面
３１１に接触するように落とし込まれている（dropped
in）。チップ２２０は、リードフレーム２２１のチップ
取着パッド取着面２２２ｂに取着している。ボンド線２
２３は、リード２２３をチップ２２０上の選択されたボ
ンドパッド（図示されていない）に、電気的接続をすべ
く使用されている。リードフレーム２２１、チップ２２
０、及びボンド線２２３は、図３に示されているように
チップ取着パッド２２２の表面３２２が放熱板１００の
チップ取着パッド取着面１０１に接触するようにモール
ドキャビティ内に配置される。リードフレーム２２１
は、ピン３４０上にフレーム２０１内の孔２４１が位置
することにより、片側のモールド３０１に取着される。FIG. 3 shows a cross-sectional view of the heat dissipation plate 100, the lead frame 221, and the chip 220 arranged in the mold cavity 310 of the mold 300. In a method of encapsulating an integrated circuit together with a heat sink, a heat sink 10
0 is dropped into the mold cavity 310 so that the legs 102 contact the surface 311.
in). The chip 220 is attached to the chip attachment pad attachment surface 222b of the lead frame 221. Bond wire 2
23 are used to make electrical connection of leads 223 to selected bond pads (not shown) on chip 220. Lead frame 221, chip 22
0 and the bond line 223 are arranged in the mold cavity so that the surface 322 of the chip attachment pad 222 contacts the chip attachment pad attachment surface 101 of the heat sink 100 as shown in FIG. . Lead frame 221
Is attached to the mold 301 on one side by locating the hole 241 in the frame 201 on the pin 340.

【０００７】２個のモールドの半体３００ａ、及び３０
０ｂは、互いに閉じ合わされる。放熱板１００の厚み３
３０ａ及び寸法３３０ｂの合体した厚さは、モールドキ
ャビティ３１０の対応する深さ３３１より大きい。従っ
て２個のモールドの半体３００ａ及び３００ｂが完全に
閉じられた際、チップ取着パッド２２２は、タイバー２
０２が上部に引き上がるべく上部に押し上げられる。こ
のタイバー２０２が上部に引き上げられることにより、
チップ取着パッド２２２に隣接するタイバー２０２の末
端を降下させる引っ張り力が生じることになる。従っ
て、放熱板１００はモールドキャビティ内の底面３１１
に押し付けられ、固定される。Two mold halves 300a and 30
0b are closed to each other. Heat sink 100 thickness 3
The combined thickness of 30a and dimension 330b is greater than the corresponding depth 331 of mold cavity 310. Therefore, when the two mold halves 300a and 300b are completely closed, the chip attachment pad 222 will not move to the tie bar 2
02 is pushed up to pull up. By pulling this tie bar 202 upward,
A pulling force will be created that lowers the end of the tie bar 202 adjacent the tip attachment pad 222. Therefore, the heat sink 100 has a bottom surface 311 inside the mold cavity.
It is pressed against and fixed.

【０００８】モールド３００が閉じられた後は、封入材
はキャビティ３１０内が満たされるまでチャネル３３５
を通してモールドキャビティ３１０内に導入される。封
入材が固まればモールド３００は開けられ、完成したパ
ッケージが取り出される。After the mold 300 is closed, the encapsulant is channel 335 until the cavity 310 is filled.
Through the mold cavity 310. When the encapsulant is solidified, the mold 300 is opened and the completed package is taken out.

【０００９】しかし、上述した放熱板を有するパッケー
ジは、新世代の集積回路に要求される熱放射性のレベル
には達していない。放熱板は、熱がチップから放熱板に
伝導した後、パッケージの外部に熱を放出するべく作用
する。これらの外側部分から、熱はその後パッケージの
外部に封入材を通して伝導される。放熱板材（アルミニ
ウム）が、樹脂材によるパッケージよりも優れた伝導性
があるので、放熱板が存在しない場合の熱放射よりも速
い速度でパッケージ内から熱が放射される。しかしなが
ら、この放射は、まだ充分な速さではなかった。However, the package having the above-mentioned heat sink has not reached the level of thermal radiation required for the new generation integrated circuit. The heat sink acts to radiate the heat to the outside of the package after the heat is conducted from the chip to the heat sink. From these outer parts, heat is then conducted to the outside of the package through the encapsulant. Since the heat dissipation plate material (aluminum) has better conductivity than the package made of the resin material, heat is radiated from the inside of the package at a speed faster than the heat radiation when the heat dissipation plate is not present. However, this emission was not yet fast enough.

【００１０】集積回路内から熱を放射させるという問題
の解決に対して、チップ取着パッド取着面と反対側のヒ
ートシンク面を、パッケージ外に直接露出させることに
より、樹脂性のパッケージを使用する利点となるべく熱
抵抗を著しく減少させる試みが行われてきた。これらの
試みは、しかしながら、「ドロップイン」方式と共に使
用されると、様々な製造上の困難さが生じて不成功に終
わった。即ち、封入プロセス中に、モールドキャビティ
内に高圧が生じ、このことは封入材が例えば粘性のある
材料のような際に顕著であり、そして各ヒートシンク間
の厚みの相違が、パッケージの間のヒートシンクの表面
とモールドキャビティ間に離間を生じさせる結果にもな
った。この不適切なパッケージ法では、露出されるよう
に意図されたヒートシンク表面上に封入材のブリード
（封入材が半透明な薄片として突出する）またはばり
（肉眼にも見える程のブリードよりも厚みのある封入材
の突出）が生じる。ブリードそしてばりは、ヒートシン
クの熱伝導性の低下を生み出すことと、そして消費者が
完成品として受け入れることのできない外観不良である
ために、望ましくない。この不適切な樹脂パッケージは
次の作業に移る前に、ヒートシンクの表面上の上述のば
り、ブリードを除去するというコスト高の作業を必要と
した。In order to solve the problem of radiating heat from the inside of the integrated circuit, a resin package is used by directly exposing the heat sink surface opposite to the chip attachment pad attachment surface to the outside of the package. Attempts have been made to significantly reduce thermal resistance as much as possible. These attempts, however, have been unsuccessful with various manufacturing difficulties when used with the "drop-in" approach. That is, during the encapsulation process, a high pressure is created in the mold cavity, which is noticeable when the encapsulant is, for example, a viscous material, and the difference in thickness between each heatsink is due to the heatsink between the packages. It also resulted in the separation between the surface of the mold and the mold cavity. This improper packaging technique causes encapsulant bleed (encapsulant to protrude as a translucent flake) or flash (thicker than the bleed that is visible to the naked eye) onto the surface of the heat sink that is intended to be exposed. Some protrusion of the encapsulant) occurs. Bleeds and burrs are undesirable because they create a loss of heat conductivity in the heat sink and because of the poor appearance that the consumer cannot accept as a finished product. This improper resin package required costly work to remove the burrs and bleed mentioned above on the surface of the heat sink before moving on to the next work.

【００１１】[0011]

【発明が解決しようとする課題】このような従来技術の
問題点に鑑み、本発明の主な目的は、熱抵抗を減少させ
ることにより、著しく優れた除熱性を有した低コストの
樹脂性封入パッケージ内の集積回路またはハイブリッド
回路を提供することにある。In view of the above problems of the prior art, the main object of the present invention is to reduce the thermal resistance, thereby providing a resinous encapsulation having a significantly excellent heat removal property at a low cost. It is to provide an integrated circuit or a hybrid circuit in a package.

【００１２】[0012]

【課題を解決するための手段】上述した目的は、パッケ
ージ内に放熱板を提供し、パッケージの外面の大部分に
放熱板の表面を露出させることによりパッケージの外部
に熱を伝導させ、熱抵抗を減少させることにより達成さ
れる。SUMMARY OF THE INVENTION The above-mentioned object is to provide a heat sink in a package, and to expose the surface of the heat sink to most of the outer surface of the package to conduct heat to the outside of the package to provide a thermal resistance. It is achieved by reducing

【００１３】放熱板は、好ましくは高い熱伝導性を有す
る無酸素銅製であるのが良い。更に、本発明によると、
「ドロップイン」方式を用いたこのようなパッケージを
形成することにより、パッケージ製造が簡略化し、低コ
スト化する。この方法により形成されたパッケージで
は、放熱板の形や大きさはモールドキャビティの形によ
って変化できる。しかし、このモールドキャビティで
は、同じ放熱板がどのようなサイズのチップ、そして多
数のリードを有するパッケージに対しても用いられる。
放熱板は、また好ましくは、モールドキャビティ内に落
とし込まれた際にスラッグが自動整合されるべくスラッ
グの外周にフィンを有していると良い。The heat radiating plate is preferably made of oxygen-free copper having high thermal conductivity. Further according to the invention,
Forming such a package using a "drop-in" scheme simplifies package manufacturing and reduces cost. In the package formed by this method, the shape and size of the heat sink can be changed according to the shape of the mold cavity. However, in this mold cavity, the same heat sink is used for chips of any size, and packages with multiple leads.
The heat sink also preferably has fins on the outer circumference of the slug so that the slug will self-align when dropped into the mold cavity.

【００１４】本発明の他の実施例では、チップ取着パッ
ドに面している放熱板の表面は、放熱板がモールド内に
落とし込まれる前に接着材でコーティングされる。In another embodiment of the invention, the surface of the heat sink facing the chip attach pad is coated with an adhesive before the heat sink is dropped into the mold.

【００１５】本発明の他の実施例では、放熱板の外周上
の少なくとも一方の面が粗面化されている。この粗面化
された表面が、封入材と放熱板との間のより強固な密着
を生み出すべく放熱板の周囲の封入材と結合する。粗面
化された表面は、またパッケージ外部からの不純物が内
部の半導体チップに達するにはより長い距離を必要とす
るべく放熱板と周囲の封入材間との間により長い境界面
を生み出している。従って、封入材と放熱板間との強固
な密着は、不純物のパッケージ内部への侵入を減少させ
ることにもなる。In another embodiment of the present invention, at least one surface on the outer circumference of the heat dissipation plate is roughened. This roughened surface joins the encapsulant around the heat sink to create a stronger bond between the encapsulant and the heat sink. The roughened surface also creates a longer interface between the heat sink and the surrounding encapsulant as impurities from the outside of the package need longer to reach the internal semiconductor chips. . Therefore, the strong adhesion between the encapsulant and the heat sink also reduces the penetration of impurities into the package.

【００１６】本発明による他の実施例では、スロットが
放熱板を貫通して形成されている。スロットにより、周
囲の封入材の脱却を防止すべく封入材と放熱板が結合さ
れる。スロットは、また封入過程の間、封入材の優れた
流動性を提供することになる。In another embodiment of the present invention, slots are formed through the heat sink. The slot joins the encapsulant and the heat sink to prevent the encapsulant around it from coming off. The slots will also provide excellent flowability of the encapsulant during the encapsulation process.

【００１７】本発明によると、上述したパッケージを製
造するための方法を提供しており、放熱板の露出した表
面に封入材のブリードまたはばりが発生しない。放熱板
とリードフレームとの間の厚さと、そしてモールドキャ
ビティの対応する深さの相違が、モールドが完全に閉じ
られた際に、リードフレームタイバーの引っ張り力を生
み出している。このタイバーの引っ張り力が、放熱板に
対してチップ取着パッドを押し付けており、次に、放熱
板が、モールドキャビティ内の底面に押し付けられる。
この方法により、露出された放熱板表面とモールドキャ
ビティ底面との間の強固な密着状態が生じ、封入材が、
これら両面間に流入することを防止する。According to the present invention, there is provided a method for manufacturing the above-mentioned package, wherein the encapsulant does not bleed or flash on the exposed surface of the heat sink. The difference between the thickness of the heat sink and the leadframe, and the corresponding depth of the mold cavity, creates a pulling force on the leadframe tie bar when the mold is fully closed. The pulling force of the tie bar presses the chip attachment pad against the heat sink, and then the heat sink is pressed against the bottom surface in the mold cavity.
By this method, a strong close contact between the exposed heat sink surface and the bottom surface of the mold cavity occurs, and the encapsulating material is
It prevents inflow between these two surfaces.

【００１８】[0018]

【作用】本発明による「ドロップイン」方式を用いたパ
ッケージを形成すると、パッケージ製作が簡略化し、低
コスト化することになる。When the package using the "drop-in" method according to the present invention is formed, the package manufacturing is simplified and the cost is reduced.

【００１９】[0019]

【実施例】以下、本発明の単個の集積回路を有する好適
実施例を添付の図面について詳しく説明する。しかしな
がら、本発明はもちろん、複数の集積回路を包括するパ
ッケージにも同様に適用されるのは言うまでもない。更
に本発明によるパッケージは、ポリマー板、セラミッ
ク、シリコン、金属またはこれらの材料の混合物により
構成された下層連結回路、或いは相互に作用する連結回
路の有無とは無関係に構成されても良い。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENT A preferred embodiment having a single integrated circuit of the present invention will now be described in detail with reference to the accompanying drawings. However, it goes without saying that the present invention is likewise applied to a package including a plurality of integrated circuits. Furthermore, the package according to the invention may be constructed with or without an underlying interconnect circuit made of polymer plates, ceramics, silicon, metals or mixtures of these materials, or with or without interacting interconnect circuits.

【００２０】図４Ａ及び図４Ｂは、それぞれ本発明によ
る放熱板（slug）４００の平面図及び断面図を示してい
る。放熱板４００は、好ましくは、高い熱伝導性を有す
る材料、即ち高い熱伝導性を有する無酸素銅製であるの
がよい。放熱板４００は、また、アルムニウム、銅、ベ
リリウムまたはこれらの材料の合金製であっても良い。
チップ取着パッド取着面４０１は、基板の表面４００ａ
上に台状に回りよりも高くなっており、同様に面４０２
は、基板側面４００ｂ上に台状に回りよりも高くなって
いる。面４０２は基板面４００ｂに対して大きな領域を
有しており、完成品のパッケージに於ても露出したまま
になっている。露出した表面４０２を有する放熱板４０
０を、図１Ａ及び図１Ｂに示された従来技術の放熱板１
００と比較すると、従来技術では裏面１００ｂから突出
している脚部１０２だけが、パッケージ外部に露出した
形になっている。放熱板４００は図４Ａに示されている
ように形成されたフィン４０４と、そして放熱板４００
を貫通するスロット４０３をも有している。4A and 4B respectively show a plan view and a cross-sectional view of a heat sink 400 according to the present invention. The heat sink 400 is preferably made of a material having high thermal conductivity, that is, oxygen-free copper having high thermal conductivity. The heat sink 400 may also be made of aluminum, copper, beryllium or an alloy of these materials.
The chip attachment pad attachment surface 401 is the surface 400a of the substrate.
It is trapezoidal above and higher than the circumference.
Are trapezoidal on the substrate side surface 400b and are higher than the circumference. The surface 402 has a large area relative to the substrate surface 400b and remains exposed in the finished package. Heat sink 40 having exposed surface 402
0 is the heat sink 1 of the prior art shown in FIGS. 1A and 1B.
Compared with 00, in the conventional technique, only the leg portion 102 protruding from the back surface 100b is exposed to the outside of the package. The heat sink 400 includes fins 404 formed as shown in FIG. 4A, and the heat sink 400.
It also has a slot 403 extending therethrough.

【００２１】図５は、完全に閉じられたモールド５００
のモールドキャビティ５１０内に配置された放熱板４０
０、リードフレーム５２１、及び半導体チップ５２０の
断面図を示している。フレーム５２６、リード５２１
ａ、タイバー５２５、チップ取着パッド５２２、半導体
チップ５２０、及びボンド線５２３は全て図２及び図３
で詳述された対応する各要素と同様である。FIG. 5 shows the mold 500 completely closed.
Heat sink 40 disposed in the mold cavity 510 of
0, the lead frame 521, and the semiconductor chip 520 are shown in cross-section. Frame 526, lead 521
a, tie bar 525, chip attachment pad 522, semiconductor chip 520, and bond line 523 are all shown in FIGS.
Are the same as the corresponding elements detailed in.

【００２２】集積回路のパッケージを製造するにあたっ
て、放熱板４００は、放熱板４００の表面４０２がモー
ルドキャビティの底面５１１に接するようにモールドキ
ャビティ５１０内に落とし込まれる。製造過程に於て、
放熱板４００は、個々にモールドキャビティ内に落とし
込まれるか、或いはキャビティ内の底部の凹部に対応す
るマトリックスアレイとして落とし込まれても良い。ス
ラッグ４００はまた、コイン形ディスペンサーにより、
キャビティ５１０内に落とし込まれても良い。放熱板４
００がキャビティ５１０内に落とし込まれると、フィン
４０４によりチップ取着パッド５２２及びチップ５２０
に対して自動整合される。フィン４０４により、放熱板
４００はキャビティ５１０内にて回転することはない。
放熱板４００の製造仕様（特にサイズ）は、モールドキ
ャビティ５１０の特徴次第である。しかしモールドキャ
ビティ５１０に関しては、同じ放熱板４００が、どのよ
うなサイズのチップと、多数のリードをも有する電子要
素と共に用いられるかもしれない。In manufacturing an integrated circuit package, the heat sink 400 is dropped into the mold cavity 510 such that the surface 402 of the heat sink 400 contacts the bottom surface 511 of the mold cavity. In the manufacturing process,
The heat sinks 400 may be dropped individually into the mold cavities or as a matrix array corresponding to the bottom recesses in the cavities. Slug 400 is also a coin-shaped dispenser
It may be dropped into the cavity 510. Heat sink 4
When 00 is dropped into the cavity 510, the fin 404 causes the chip attachment pad 522 and the chip 520.
Are automatically matched against. The fins 404 prevent the heat sink 400 from rotating in the cavity 510.
The manufacturing specifications (particularly the size) of the heat dissipation plate 400 depend on the characteristics of the mold cavity 510. However, for mold cavity 510, the same heat sink 400 may be used with chips of any size and electronic components that also have multiple leads.

【００２３】前述したように、チップ５２０は、チップ
取着パッド面５２２ｂに取着しており、リードはボンド
線５２３によりチップ５２０に連結されている。そし
て、このアセンブリは、チップ取着パッド５２２の表面
５２２ａが放熱板４００のチップ取着パッド取着面４０
１に接触するようにモールドキャビティ内に配置され
る。リードフレーム５２１は、ピン５４０上にフレーム
５２６内の孔５４１が位置することにより、一方のモー
ルドの半体５００ｂに取着される。As described above, the chip 520 is attached to the chip attachment pad surface 522b, and the lead is connected to the chip 520 by the bond wire 523. In this assembly, the surface 522 a of the chip attachment pad 522 is the chip attachment pad attachment surface 40 of the heat sink 400.
1 is placed in the mold cavity so as to contact it. The lead frame 521 is attached to one mold half 500b by locating the hole 541 in the frame 526 on the pin 540.

【００２４】２個のモールドの半体５００ａ及び５００
ｂは互いに閉じ合わされる。寸法５３０は、対応するモ
ールドキャビティ５１０の深さ５３１よりも大きい。こ
の寸法の相違が、モールド５００が完全に閉じられる
と、図５に示されるように、タイバー５２５が上部に引
き上げられる。この上部への引き上げが、チップ取着パ
ッド５２２に隣接するタイバー５２５の末端を降下させ
る引っ張り力をタイバー５２５に与えることになる。従
って、放熱板面４０２は、モールドキャビティ５１１に
押し付けられ、放熱板４００は固定し、放熱板４００と
モールド底面５１１との間が密着される。Two mold halves 500a and 500
b are closed to each other. The dimension 530 is greater than the depth 531 of the corresponding mold cavity 510. This dimensional difference causes the tie bar 525 to be pulled up when the mold 500 is fully closed, as shown in FIG. This upward pulling provides the tie bar 525 with a pulling force that lowers the end of the tie bar 525 adjacent the tip attachment pad 522. Therefore, the heat dissipation plate surface 402 is pressed against the mold cavity 511, the heat dissipation plate 400 is fixed, and the heat dissipation plate 400 and the mold bottom surface 511 are brought into close contact with each other.

【００２５】図５に示されているように、モールド５０
０が閉じられると、封入材はキャビティ５１０が満たさ
れるまでチャネル５３５を通してモールドキャビティ５
１０内に射出される。他の目的では存在し得ない付随的
通路であるスロット４０３を通して封入材が放熱板４０
０の一方から他方に流動することにより放熱板４００周
囲での封入材の流動性を高めている。更に、放熱板面４
０２とモールドキャビティ５１０との間が強固に密着さ
れることにより、封入材が固まったときに、その２つの
面の間に封入材が流入しないので、面４０２上に封入材
がブリードしたりばりすることがない。また、従来使用
されていたものよりも、より優れた特性を有する（即ち
粘性の低い充填材）封入材の開発と、モールド過程パラ
メータ（即ち、複合粘性、押し出し圧）のコンピュータ
制御の実施により、封入材のブリードまたはばりは最小
限に抑えられている。As shown in FIG. 5, the mold 50
When the 0 is closed, the encapsulant will pass through the channel 535 to the mold cavity 5 until the cavity 510 is filled.
It is injected into 10. The encapsulant can be spread through the heat sink 40 through slots 403, which are ancillary passages that cannot exist for other purposes.
The fluidity of the encapsulant around the heat dissipation plate 400 is enhanced by flowing from 0 to the other. Furthermore, the heat sink surface 4
02 and the mold cavity 510 are firmly adhered to each other, so that when the encapsulant is solidified, the encapsulant does not flow between the two surfaces, so that the encapsulant bleeds on the surface 402. There is nothing to do. In addition, by developing an encapsulant with superior characteristics (ie, a filler with low viscosity) and using computer control of molding process parameters (ie, compound viscosity, extrusion pressure), compared to those used conventionally, Bleed or flash of encapsulant is minimized.

【００２６】封入材が固まると、モールド５０５が開け
られ、パッケージは取り出される。リードフレームのフ
レーム部５２６が切り取られることにより、各リード５
２１ａ及びタイバー５２５がパッケージから延出するこ
とになる。パッケージの外部に露出しているタイバー５
２５の部分が切除され、タイバー５２５はパッケージの
完成品からは延出しない。図６はパッケージの完成品６
００の断面図である。完成したパッケージ内に於ては、
放熱板の表面４０２はパッケージ６００の外部に露出し
ている。スロット４０３は、放熱板４００がパッケージ
６００外に飛び出すことを防止するべく固まった封入材
と放熱板を強固に連結させる作用をする。Once the encapsulant has set, the mold 505 is opened and the package is removed. By cutting the frame portion 526 of the lead frame, each lead 5
21a and tie bars 525 will extend from the package. Tie bar 5 exposed outside the package
Twenty-five parts are cut away and the tie bars 525 do not extend from the finished package. Figure 6 shows the finished package 6
It is sectional drawing of 00. In the completed package,
The surface 402 of the heat sink is exposed to the outside of the package 600. The slot 403 has a function of firmly connecting the heat sink with the solidified encapsulating material to prevent the heat sink 400 from jumping out of the package 600.

【００２７】図７Ａは、上述した本発明の実施例による
半導体チップ５２０と、チップ取着パッド５２２と、そ
して放熱板４００との間の連結の詳細を示す図である。
本発明の変化した実施例に於ては、放熱板面４０１は、
チップ取着パッド面５２２ａに接触する前に接着材（Ｂ
段階エポキシ）で最初にコーティングされている。好ま
しくは、接着材は熱伝導性が高く、電気的絶縁性を有し
ていると良い。図７は、本発明の本実施例による半導体
チップ５２０と、チップ取着パッド５２２と、接着剤７
０１と放熱板４００との間の連結の詳細を示す図であ
る。FIG. 7A is a view showing details of the connection between the semiconductor chip 520, the chip attachment pad 522, and the heat sink 400 according to the above-described embodiment of the present invention.
In a modified embodiment of the invention, the heat sink surface 401 is
Before contacting the chip attachment pad surface 522a, the adhesive (B
First coated with step epoxy). Preferably, the adhesive has high thermal conductivity and electrical insulation. FIG. 7 shows a semiconductor chip 520, a chip attachment pad 522, and an adhesive 7 according to this embodiment of the present invention.
It is a figure which shows the detail of the connection between 01 and the heat sink 400.

【００２８】図８は、本発明の変化した実施例による放
熱板４００の詳細図である。本実施例に於ては、放熱板
４００の表面８０１は、エッチング、サンドブラスト、
粗面メッキ、黒染め、または他の方法により所定の深さ
の粗面を形成する。このような方法にて粗面化されるこ
とにより、面８０１は、封入材６０１と放熱板４００と
の間に、面８０１が平滑な場合よりも強固な連結を提供
することになる。更に面８０１が粗面化されていること
により、放熱板と封入材の接した部分に沿った通路を通
してパッケージの内部に不純物が侵入する状況を減少す
べく放熱板４００と封入材６０１との間に強固な密着さ
れた長い境界面を提供することになる。FIG. 8 is a detailed view of a heat sink 400 according to a modified embodiment of the present invention. In this embodiment, the surface 801 of the heat sink 400 is formed by etching, sandblasting,
A rough surface having a predetermined depth is formed by rough surface plating, blackening, or another method. Roughened in this manner, surface 801 will provide a stronger connection between encapsulant 601 and heat sink 400 than if surface 801 were smooth. Further, since the surface 801 is roughened, between the heat sink 400 and the encapsulant 601 is reduced in order to reduce the situation in which impurities enter the inside of the package through the passage along the contact portion of the heat sink and the encapsulant. To provide a long, tightly bound interface.

【００２９】本発明による様々な実施例を詳述してきた
が、添付の請求項の技術的視点を逸脱することなしに、
種々の変形が可能であることは当業者には明らかであ
る。Various embodiments of the invention have been described in detail, without departing from the technical scope of the appended claims.
It will be apparent to those skilled in the art that various modifications are possible.

【００３０】[0030]

【発明の効果】以上の説明により明らかなように、熱抵
抗を減少させることにより、著しく高い除熱性を有した
低コストの樹脂性封入パッケージ内の集積回路又はハイ
ブリット回路を提供することができる。As is apparent from the above description, by reducing the thermal resistance, it is possible to provide an integrated circuit or a hybrid circuit in a resin-encapsulated package which has a significantly high heat removal property and is low in cost.

【図面の簡単な説明】[Brief description of drawings]

【図１】図１はＡ及びＢからなり、Ａは従来技術の放熱
板の平面図であり、Ｂはその側面図である。FIG. 1 is composed of A and B, where A is a plan view of a prior art heat sink and B is a side view thereof.

【図２】リードフレーム上に取着された半導体チップの
平面図である。FIG. 2 is a plan view of a semiconductor chip mounted on a lead frame.

【図３】図１Ａ及び図１Ｂの放熱板の断面図であり、モ
ールドキャビティ内に配置された半導体チップとリード
フレームを示している。FIG. 3 is a cross-sectional view of the heat dissipation plate of FIGS. 1A and 1B, showing a semiconductor chip and a lead frame arranged in a mold cavity.

【図４】図４はＡ及びＢからなり、Ａは本発明による実
施例の放熱板の平面図であり、Ｂはその側面図である。FIG. 4 is composed of A and B, where A is a plan view of a heat sink of an embodiment according to the present invention, and B is a side view thereof.

【図５】図４Ａ及び図４Ｂの放熱板の断面図であり、閉
じたモールドのモールドキャビティ内に配置されたリー
ドフレーム及び半導体チップを示している。FIG. 5 is a cross-sectional view of the heat sink of FIGS. 4A and 4B, showing a lead frame and a semiconductor chip arranged in a mold cavity of a closed mold.

【図６】本発明の実施例による集積回路の断面図であ
る。FIG. 6 is a cross-sectional view of an integrated circuit according to an embodiment of the present invention.

【図７】図７はＡ及びＢからなり、Ａは本発明の変化し
た実施例による放熱板であり、Ｂはチップ取着パッド間
の連結を示す断面図である。FIG. 7 is a cross-sectional view of A and B, where A is a heat sink according to a modified embodiment of the present invention, and B is a connection between chip attachment pads.

【図８】本発明の他の実施例による放熱板の断面図であ
る。FIG. 8 is a cross-sectional view of a heat dissipation plate according to another embodiment of the present invention.

【符号の説明】[Explanation of symbols]

１００ 放熱板 １０２ 脚部 ２０２ タイバー ２２０ チップ ２２１ リードフレーム ２２２ チップ取着パッド ３００ モールド ３１０ モールドキャビティ ４００ 放熱板 ４０３ スロット ４０４ フィン 100 heat sink 102 leg 202 tie bar 220 chip 221 lead frame 222 chip attachment pad 300 mold 310 mold cavity 400 heat sink 403 slot 404 fin

Claims (25)

【特許請求の範囲】[Claims] 【請求項１】 半導体パッケージ構造であって、 半導体チップと、 前記半導体チップが取着されるべき第１面及び前記第１
面とは反対側の第２面を有するチップ取着パッドと、前
記チップ取着パッドからは電気的に絶縁され、かつ前記
チップ取着パッドの外周に設けられている導電性を有す
る複数のリードとからなるリードフレームと、 前記チップ取着パッドの前記第２面に取着されている第
１面及び、該第１面とは反対側の第２面を有する放熱板
と、 前記半導体チップ、リードフレーム及び放熱板を封入す
る絶縁材とを有しており、 前記放熱板の前記第２面が、前記絶縁材の外部に露出さ
れていることを特徴とする半導体パッケージ構造。1. A semiconductor package structure comprising: a semiconductor chip, a first surface to which the semiconductor chip is to be attached, and the first surface.
A chip attachment pad having a second surface opposite to the surface, and a plurality of conductive leads that are electrically insulated from the chip attachment pad and that are provided on the outer periphery of the chip attachment pad. A lead frame including: a heat dissipation plate having a first surface attached to the second surface of the chip attachment pad and a second surface opposite to the first surface; A semiconductor package structure, comprising: a lead frame and an insulating material encapsulating a heat dissipation plate, wherein the second surface of the heat dissipation plate is exposed to the outside of the insulating material. 【請求項２】 前記放熱板が、高い熱伝導性を有する
無酸素銅製であることを特徴とする請求項１に記載の半
導体パッケージ構造。2. The semiconductor package structure according to claim 1, wherein the heat dissipation plate is made of oxygen-free copper having high thermal conductivity. 【請求項３】 前記放熱板が、前記第１及び前記第２
面に対して垂直な、粗面化された少なくとも一面を有し
ていることにより、前記絶縁材が少なくとも前記一面と
強固に結合するようにしたことを特徴とする請求項１に
記載の半導体パッケージ構造。3. The heat radiating plate is the first and the second.
The semiconductor package according to claim 1, wherein the insulating material is firmly bonded to at least the one surface by having at least one roughened surface perpendicular to the surface. Construction. 【請求項４】 少なくとも１個のスロットが、前記放
熱板の外周近くに前記放熱板を貫通して形成されている
ことを特徴とする請求項１に記載の半導体パッケージ構
造。4. The semiconductor package structure according to claim 1, wherein at least one slot is formed near the outer periphery of the heat sink so as to penetrate the heat sink. 【請求項５】 前記放熱板の前記第１面を、前記チッ
プ取着パッドの前記第２面に接着する接着材を更に有す
ることを特徴とする請求項１に記載の半導体パッケージ
構造。5. The semiconductor package structure according to claim 1, further comprising an adhesive that adheres the first surface of the heat dissipation plate to the second surface of the chip attachment pad. 【請求項６】 複数のフィンが、前記放熱板の外周に
間隔を置いた位置に形成されていることを特徴とする請
求項１に記載の半導体パッケージ構造。6. The semiconductor package structure according to claim 1, wherein a plurality of fins are formed at positions spaced from each other on the outer periphery of the heat dissipation plate. 【請求項７】 半導体パッケージ方法であって、 半導体チップをリードフレーム中心部に設けられるチッ
プ取着パッドの第１面に取着する過程と、 第１及び第２の半体を有するモールド内に形成されたモ
ールドキャビティ内に、前記半導体チップと前記リード
フレームとを配置する過程と、 前記リードフレームの外側の部分を、前記モールドキャ
ビティの外側に位置している前記モールドの前記第１半
体に取着することにより、前記リードフレームの外側の
部分を押さえつける過程と、 放熱板の第１面が、前記チップ取着パッドの第２面に隣
接するべく前記モールドキャビティ内に放熱板を配置す
る過程と、 前記放熱板が前記チップ取着パッドに対して押し付けら
れ、前記放熱板の前記第２面が前記モールドキャビティ
の対応する面に対して固定される力を生み出すべく前記
放熱板の前記第２面に対して前記モールドの前記第２半
体を押し付ける過程と、 前記放熱板とモールドキャビティの底面との間の強固な
密着を維持すべく、前記放熱板の前記第２面を前記モー
ルドキャビティの対応する面に固定する一方で、絶縁材
を前記モールドキャビティ内に導入する過程とを有する
ことを特徴とする半導体パッケージ方法。7. A semiconductor packaging method, comprising: attaching a semiconductor chip to a first surface of a chip attachment pad provided at the center of a lead frame; and a step of forming a mold having first and second halves. A step of disposing the semiconductor chip and the lead frame in the formed mold cavity; and an outer portion of the lead frame is formed on the first half of the mold located outside the mold cavity. A step of pressing the outer portion of the lead frame by attaching, and a step of disposing the heat sink in the mold cavity so that the first surface of the heat sink is adjacent to the second surface of the chip attachment pad. And the heat sink is pressed against the chip attachment pad, and the second surface of the heat sink is against the corresponding surface of the mold cavity. To press the second half of the mold against the second surface of the heat sink to generate a fixed force, and to maintain a strong close contact between the heat sink and the bottom of the mold cavity. Fixing the second surface of the heat dissipation plate to a corresponding surface of the mold cavity while introducing an insulating material into the mold cavity. 【請求項８】 前記放熱板が、前記モールドキャビテ
ィ内で前記チップ取着パッドに対して正しい位置に置か
れるべく前記放熱板が自動整合されることを特徴とする
請求項７に記載の半導体パッケージ方法。8. The semiconductor package according to claim 7, wherein the heat sink is automatically aligned so that the heat sink is placed in a correct position with respect to the chip attachment pad in the mold cavity. Method. 【請求項９】 半導体パッケージ構造であって、 半導体チップと、 前記半導体チップが取着されるべき第１面及び前記第１
面とは反対側の第２面を有する複数のチップ取着パッド
と、前記チップ取着パッドの外周に設けられており、か
つ各内側の末端が前記チップ取着パッドからは電気的に
絶縁されているが前記チップ取着パッドに隣接している
複数の導電性を有するリードと、各内側の末端が前記チ
ップ取着パッドに連結されている複数のタイバーとから
なるリードフレームと、 前記複数のリードの内側の末端に、前記前記チップ取着
パッドを連結している複数の導電性を有するボンド線
と、 前記チップ取着パッドの前記第２面に取着される第１面
及び、該第１面とは反対側の第２面を有する放熱板と、 前記半導体チップ、リードフレーム及び放熱板を封入す
る絶縁材とを有しており、 前記放熱板の前記第２面が、前記絶縁材の外部に露出さ
れていることを特徴とする半導体パッケージ構造。9. A semiconductor package structure comprising: a semiconductor chip, a first surface to which the semiconductor chip is to be attached, and the first surface.
A plurality of chip attachment pads having a second surface opposite to the surface and an outer periphery of each of the chip attachment pads, each inner end of which is electrically insulated from the chip attachment pad. However, a lead frame composed of a plurality of conductive leads adjacent to the chip attachment pad, and a plurality of tie bars whose inner ends are connected to the chip attachment pad; A plurality of conductive bond lines connecting the chip attachment pad to the inner end of the lead; a first surface attached to the second surface of the chip attachment pad; A heat dissipation plate having a second surface opposite to the first surface; and an insulating material enclosing the semiconductor chip, the lead frame, and the heat dissipation plate, wherein the second surface of the heat dissipation plate is the insulating material. It is exposed to the outside of Semiconductor package structure to be considered. 【請求項１０】 前記放熱板が高い熱伝導性を有する
無酸素銅製であることを特徴とする請求項９に記載の半
導体パッケージ構造。10. The semiconductor package structure according to claim 9, wherein the heat dissipation plate is made of oxygen-free copper having high thermal conductivity. 【請求項１１】 前記放熱板が、前記第１及び前記第
２面に対して垂直な、粗面化された少なくとも一面を有
していることにより、前記絶縁材が少なくとも前記一面
と強固に結合するようされ、そして、 少なくとも１個のスロットが、前記放熱板の外周近くに
前記放熱板を貫通して形成されていることを特徴とした
請求項９に記載の半導体パッケージ構造。11. The heat dissipation plate has at least one roughened surface perpendicular to the first and second surfaces, whereby the insulating material is firmly bonded to at least the one surface. 10. The semiconductor package structure according to claim 9, wherein at least one slot is formed near the outer periphery of the heat sink and penetrates the heat sink. 【請求項１２】 前記放熱板の前記第１面を、前記チ
ップ取着パッドの前記第２面に接着する接着材を更に有
し、複数のフィンが、前記放熱板の外周に間隔を置いた
位置に形成されていることを特徴とする請求項９に記載
の半導体パッケージ構造。12. The adhesive further comprises an adhesive material for adhering the first surface of the heat sink to the second surface of the chip attachment pad, and a plurality of fins are spaced apart from each other on the outer periphery of the heat sink. The semiconductor package structure according to claim 9, wherein the semiconductor package structure is formed at a position. 【請求項１３】 半導体パッケージ方法であって、 半導体チップを、リードフレーム中心部に設けられたチ
ップ取着パッドの第１面に取着する過程と、 各ボンド線の一方の端部を、前記チップ取着パッドに、
そして各ボンド線の他方の端部を前記リードフレームの
周囲に設けられたリードの内側の端部に連結する過程
と、 第１及び第２の半体を有するモールド内に形成されたモ
ールドキャビティ内に、前記半導体チップと前記リード
フレームとを配置する過程と、 前記リードフレームの外側の部分を、前記モールドキャ
ビティの外側に位置している前記モールドの前記第１半
体に取着することにより、前記リードフレームの外側の
部分を押さえつける過程と、 放熱板の第１面が前記チップ取着パッドの第２面に隣接
するべく前記モールドキャビティ内に放熱板を配置する
過程と、 前記放熱板が前記チップ取着パッドに対して押し付けら
れ、前記放熱板の前記第２面が前記モールドキャビティ
の対応する面に対して固定される力を生み出すべく前記
放熱板の前記第２面に対して前記モールドの前記第２半
体を押し付ける過程と、 前記放熱板とモールドキャビティの底面との間の強固な
密着を維持すべく、前記放熱板の前記第２面を前記モー
ルドキャビティの対応する面に固定する一方で、絶縁材
を前記モールドキャビティ内に導入する過程とを有する
ことを特徴とする請求項９に記載の半導体のパッケージ
方法。13. A method of packaging a semiconductor, comprising a step of attaching a semiconductor chip to a first surface of a chip attachment pad provided at a central portion of a lead frame, and one end portion of each bond line, For chip attachment pad,
And a process of connecting the other end of each bond wire to an inner end of a lead provided around the lead frame, and a mold cavity formed in a mold having first and second halves. In the step of arranging the semiconductor chip and the lead frame, by attaching the outer portion of the lead frame to the first half of the mold located outside the mold cavity, Pressing the outer part of the lead frame, arranging the heat sink in the mold cavity so that the first surface of the heat sink is adjacent to the second surface of the chip attachment pad, and The second surface of the heat sink is pressed against a chip attachment pad to create a force that secures the second surface to a corresponding surface of the mold cavity. The process of pressing the second half of the mold against the second surface of the heat sink and the second side of the heat sink in order to maintain a strong close contact between the heat sink and the bottom surface of the mold cavity. The method of packaging a semiconductor according to claim 9, further comprising the step of fixing a surface to a corresponding surface of the mold cavity while introducing an insulating material into the mold cavity. 【請求項１４】 前記放熱板が、前記モールドキャビ
ティ内で前記チップ取着パッドに対して正しい位置に置
かれるべく前記放熱板が自動整合されることを特徴とす
る請求項１３に記載の半導体パッケージ方法。14. The semiconductor package of claim 13, wherein the heat sink is self-aligned so that the heat sink is properly positioned in the mold cavity with respect to the chip attachment pad. Method. 【請求項１５】 半導体パッケージ構造であって、 半導体チップと、 前記半導体チップが取着されるべき第１面及び前記第１
面とは反対側の第２面を有する複数のチップ取着パッド
と、前記チップ取着パッドの外周に設けられており、か
つ各内側の末端が前記チップ取着パッドからは電気的に
絶縁されているが、前記チップ取着パッドに隣接してい
る複数の導電性のリードと、各内側の末端が前記チップ
取着パッドに連結されている複数のタイバーとからなる
リードフレームと、 前記複数のリードの内側の末端に、前記前記チップ取着
パッドを連結している複数の導電性を有するボンド線
と、 前記チップ取着パッドの前記第２面に取着している第１
面と、該第１面とは反対側の第２面と、前記第１及び前
記第２面に対して垂直な、粗面化された少なくとも一面
と、少なくとも１個のスロットと、複数のフィンとを有
している高い熱伝導性を有する無酸素銅製の放熱板と、
そして、 前記半導体チップ、リードフレーム、ボンド線及び放熱
板を封入する絶縁材とを有しており、 前記少なくとも１個のスロットが前記放熱板を貫通して
形成されており、 前記複数のフィンが前記放熱板の外周に間隔を置いて形
成されており、 前記放熱板の前記第２面が後記絶縁材の外部に露出され
ていることを特徴とする半導体パッケージ構造。15. A semiconductor package structure, comprising: a semiconductor chip, a first surface to which the semiconductor chip is to be attached, and the first surface.
A plurality of chip attachment pads having a second surface opposite to the surface and an outer periphery of each of the chip attachment pads, each inner end of which is electrically insulated from the chip attachment pad. However, a lead frame composed of a plurality of conductive leads adjacent to the chip attachment pad, and a plurality of tie bars whose inner ends are connected to the chip attachment pad; A plurality of conductive bond lines connecting the chip attachment pad to the inner end of the lead; and a first attachment wire attached to the second surface of the chip attachment pad.
A surface, a second surface opposite to the first surface, at least one roughened surface perpendicular to the first and second surfaces, at least one slot, and a plurality of fins. A heat sink made of oxygen-free copper having high thermal conductivity having
And a semiconductor chip, a lead frame, a bond wire, and an insulating material enclosing the heat sink, the at least one slot is formed through the heat sink, and the plurality of fins are formed. A semiconductor package structure, which is formed at intervals on the outer periphery of the heat sink, and the second surface of the heat sink is exposed to the outside of an insulating material described later. 【請求項１６】 半導体パッケージ用放熱板であっ
て、 第１基板面と、 前記第１基板面とは反対側の第２基板面と、 前記第１基板面上に台状に回りよりも高くなっているチ
ップ取着パッド面と、 前記第２基板面上に台状に回りよりも高くなっている主
熱伝達面とを有しており、 前記半導体パッケージ用放熱板が、更に、 パッケージモールド用型のキャビティ内に配置された際
に前記放熱板を自動整合する手段と、 前記放熱板の外周近くに前記第１基板面から前記第２基
板面に向けて前記放熱板を貫通して形成されている少な
くとも１個のスロットとを有することを特徴とする半導
体パッケージ用放熱板。16. A heat sink for a semiconductor package, comprising: a first substrate surface, a second substrate surface opposite to the first substrate surface, and a trapezoidal shape higher than the first substrate surface. And a main heat transfer surface that is higher than the circumference in a trapezoidal shape on the second substrate surface, and the semiconductor package heat dissipation plate further includes a package mold. A means for automatically aligning the heat dissipation plate when the heat dissipation plate is arranged in the cavity of the mold, and a penetrating through the heat dissipation plate near the outer periphery of the heat dissipation plate from the first substrate surface toward the second substrate surface A heat sink for a semiconductor package having at least one slot formed therein. 【請求項１７】 前記半導体パッケージ用放熱板が、
高い熱伝導性を有する無酸素銅製であることを特徴とす
る請求項１６に記載の半導体パッケージ用放熱板。17. The heat dissipation plate for a semiconductor package,
The heat sink for a semiconductor package according to claim 16, which is made of oxygen-free copper having high thermal conductivity. 【請求項１８】 前記整合手段が、前記半導体パッケ
ージ用放熱板の外周に間隔を置いて形成されている複数
のフィンを有していることを特徴とする請求項１６に記
載の半導体パッケージ用放熱板。18. The heat dissipation device for a semiconductor package according to claim 16, wherein the matching means has a plurality of fins formed at intervals on an outer periphery of the heat dissipation plate for the semiconductor package. Board. 【請求項１９】 前記放熱板を貫通して形成される複
数のスロットを有していることを特徴とする請求項１６
に記載の半導体パッケージ用放熱板。19. The apparatus according to claim 16, further comprising a plurality of slots formed through the heat dissipation plate.
A heat sink for a semiconductor package according to. 【請求項２０】 前記第１及び第２基板面に対して垂
直である少なくとも１個の粗面化された面を、更に、有
していることを特徴とする請求項１６に記載の半導体パ
ッケージ用放熱板。20. The semiconductor package of claim 16, further comprising at least one roughened surface perpendicular to the first and second substrate surfaces. Heat sink. 【請求項２１】 半導体パッケージ用放熱板であっ
て、 主熱伝達面を有しており、 前記半導体パッケージ用放熱板が、更に、 キャビティ内に配置された際に前記半導体パッケージ用
放熱板を自動整合する手段と、 前記半導体パッケージ用放熱板を、周囲の材料と連結さ
せる手段とを有することを特徴とする半導体パッケージ
用放熱板。21. A heat sink for a semiconductor package, the heat sink having a main heat transfer surface, wherein the heat sink for the semiconductor package is further adapted to automatically operate when the heat sink is placed in a cavity. A heat sink for a semiconductor package, comprising: a matching means; and a means for connecting the heat sink for the semiconductor package with a surrounding material. 【請求項２２】 前記半導体パッケージ用放熱板が、
高い熱伝導性を有する無酸素銅製であることを特徴とす
る請求項２１に記載の半導体パッケージ用放熱板。22. The heat dissipation plate for a semiconductor package,
The heat sink for a semiconductor package according to claim 21, wherein the heat sink is made of oxygen-free copper having high thermal conductivity. 【請求項２３】 前記整合手段が、前記放熱板の外周
に間隔を置いて形成される複数のフィンを有しているこ
とを特徴とする請求項２１に記載の半導体パッケージ用
放熱板。23. The heat dissipation plate for a semiconductor package according to claim 21, wherein the matching means has a plurality of fins formed at intervals on the outer periphery of the heat dissipation plate. 【請求項２４】 前記連結手段が、前記放熱板の外周
近くに前記放熱板を貫通して形成される少なくとも１個
のスロットを有していることを特徴とする請求項２１に
記載の半導体パッケージ用放熱板。24. The semiconductor package according to claim 21, wherein the connecting means has at least one slot formed near the outer periphery of the heat dissipation plate and penetrating the heat dissipation plate. Heat sink. 【請求項２５】 前記連結手段が、更に、前記主熱伝
達面に対して垂直な粗面化された面を有していることを
特徴とする請求項２４に記載の半導体パッケージ用放熱
板。25. The heat dissipation plate for a semiconductor package according to claim 24, wherein the connecting means further has a roughened surface perpendicular to the main heat transfer surface.
JP5090929A 1992-03-31 1993-03-24 Semiconductor package structure, semicon- ductor packaging method and heat sink for semiconductor package Pending JPH06120374A (en)

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US07/861,736 1992-03-31

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