JPH0470818A - Highly dielectric film, formation thereof and liquid crystal display panel using the same - Google Patents
Highly dielectric film, formation thereof and liquid crystal display panel using the sameInfo
- Publication number
- JPH0470818A JPH0470818A JP18622090A JP18622090A JPH0470818A JP H0470818 A JPH0470818 A JP H0470818A JP 18622090 A JP18622090 A JP 18622090A JP 18622090 A JP18622090 A JP 18622090A JP H0470818 A JPH0470818 A JP H0470818A
- Authority
- JP
- Japan
- Prior art keywords
- film
- polyimide
- liquid crystal
- ceramic
- mixed
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004973 liquid crystal related substance Substances 0.000 title claims description 51
- 230000015572 biosynthetic process Effects 0.000 title claims description 10
- 229920001721 polyimide Polymers 0.000 claims abstract description 60
- 239000004642 Polyimide Substances 0.000 claims abstract description 58
- 238000000034 method Methods 0.000 claims abstract description 53
- 239000000919 ceramic Substances 0.000 claims abstract description 51
- 229920000642 polymer Polymers 0.000 claims abstract description 17
- 238000004544 sputter deposition Methods 0.000 claims abstract description 15
- 239000000843 powder Substances 0.000 claims abstract description 8
- 239000000203 mixture Substances 0.000 claims abstract 2
- 238000001771 vacuum deposition Methods 0.000 claims abstract 2
- 239000010408 film Substances 0.000 claims description 120
- 239000010409 thin film Substances 0.000 claims description 23
- 239000002861 polymer material Substances 0.000 claims description 22
- 239000002131 composite material Substances 0.000 claims description 18
- 229920006254 polymer film Polymers 0.000 claims description 9
- 239000000758 substrate Substances 0.000 abstract description 33
- NKZSPGSOXYXWQA-UHFFFAOYSA-N dioxido(oxo)titanium;lead(2+) Chemical compound [Pb+2].[O-][Ti]([O-])=O NKZSPGSOXYXWQA-UHFFFAOYSA-N 0.000 abstract description 7
- 229920005575 poly(amic acid) Polymers 0.000 abstract description 5
- 239000002243 precursor Substances 0.000 abstract description 5
- 229910052746 lanthanum Inorganic materials 0.000 abstract description 4
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 abstract description 4
- 238000007639 printing Methods 0.000 abstract description 4
- 238000010438 heat treatment Methods 0.000 abstract description 3
- 239000000470 constituent Substances 0.000 abstract description 2
- 239000013078 crystal Substances 0.000 abstract 2
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 abstract 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 abstract 1
- 229910052593 corundum Inorganic materials 0.000 abstract 1
- -1 e.g. Polymers 0.000 abstract 1
- QNZFKUWECYSYPS-UHFFFAOYSA-N lead zirconium Chemical compound [Zr].[Pb] QNZFKUWECYSYPS-UHFFFAOYSA-N 0.000 abstract 1
- 238000004528 spin coating Methods 0.000 abstract 1
- 229910001845 yogo sapphire Inorganic materials 0.000 abstract 1
- 229910052726 zirconium Inorganic materials 0.000 abstract 1
- 239000011521 glass Substances 0.000 description 19
- 238000007740 vapor deposition Methods 0.000 description 15
- 238000010586 diagram Methods 0.000 description 13
- 229920000620 organic polymer Polymers 0.000 description 13
- 238000001704 evaporation Methods 0.000 description 6
- CYIDZMCFTVVTJO-UHFFFAOYSA-N pyromellitic acid Chemical compound OC(=O)C1=CC(C(O)=O)=C(C(O)=O)C=C1C(O)=O CYIDZMCFTVVTJO-UHFFFAOYSA-N 0.000 description 6
- GTDPSWPPOUPBNX-UHFFFAOYSA-N ac1mqpva Chemical compound CC12C(=O)OC(=O)C1(C)C1(C)C2(C)C(=O)OC1=O GTDPSWPPOUPBNX-UHFFFAOYSA-N 0.000 description 5
- 230000001276 controlling effect Effects 0.000 description 5
- 238000000151 deposition Methods 0.000 description 5
- 238000009826 distribution Methods 0.000 description 5
- 239000010419 fine particle Substances 0.000 description 5
- 238000006243 chemical reaction Methods 0.000 description 4
- 230000008020 evaporation Effects 0.000 description 4
- 239000002245 particle Substances 0.000 description 4
- 125000006850 spacer group Chemical group 0.000 description 4
- 238000002834 transmittance Methods 0.000 description 4
- 229910052845 zircon Inorganic materials 0.000 description 4
- GFQYVLUOOAAOGM-UHFFFAOYSA-N zirconium(iv) silicate Chemical compound [Zr+4].[O-][Si]([O-])([O-])[O-] GFQYVLUOOAAOGM-UHFFFAOYSA-N 0.000 description 4
- 229910002113 barium titanate Inorganic materials 0.000 description 3
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 238000007738 vacuum evaporation Methods 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 206010011224 Cough Diseases 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000010304 firing Methods 0.000 description 2
- 230000001105 regulatory effect Effects 0.000 description 2
- MIZLGWKEZAPEFJ-UHFFFAOYSA-N 1,1,2-trifluoroethene Chemical group FC=C(F)F MIZLGWKEZAPEFJ-UHFFFAOYSA-N 0.000 description 1
- BQCIDUSAKPWEOX-UHFFFAOYSA-N 1,1-Difluoroethene Chemical compound FC(F)=C BQCIDUSAKPWEOX-UHFFFAOYSA-N 0.000 description 1
- VLDPXPPHXDGHEW-UHFFFAOYSA-N 1-chloro-2-dichlorophosphoryloxybenzene Chemical compound ClC1=CC=CC=C1OP(Cl)(Cl)=O VLDPXPPHXDGHEW-UHFFFAOYSA-N 0.000 description 1
- 101150034533 ATIC gene Proteins 0.000 description 1
- 239000002033 PVDF binder Substances 0.000 description 1
- 229910002367 SrTiO Inorganic materials 0.000 description 1
- 229910003080 TiO4 Inorganic materials 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 229910052788 barium Inorganic materials 0.000 description 1
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 229920001577 copolymer Polymers 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- JEGUKCSWCFPDGT-UHFFFAOYSA-N h2o hydrate Chemical compound O.O JEGUKCSWCFPDGT-UHFFFAOYSA-N 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
- 229920002981 polyvinylidene fluoride Polymers 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- VEALVRVVWBQVSL-UHFFFAOYSA-N strontium titanate Chemical compound [Sr+2].[O-][Ti]([O-])=O VEALVRVVWBQVSL-UHFFFAOYSA-N 0.000 description 1
- 239000013077 target material Substances 0.000 description 1
- LLZRNZOLAXHGLL-UHFFFAOYSA-J titanic acid Chemical compound O[Ti](O)(O)O LLZRNZOLAXHGLL-UHFFFAOYSA-J 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Liquid Crystal (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Abstract
Description
【発明の詳細な説明】
〔概 要〕
高誘電性膜及びその形成方法並びにその高誘電性膜を用
いた液晶表示パネルに関し、
高い誘電率を有し、かつ液晶配向機能を備えた高誘電性
膜とその形成方法並びにその高誘電性膜を液晶表示パネ
ルの配向膜に用いることにより、しきい値電圧に対する
該配向膜の膜厚分布の影響を低減して表示むらを減少す
ることを目的とし、ポリイミド系高分子材料に、咳高分
子材料よりも高誘電率なセラミックスを混入した高誘電
性膜を構成する。[Detailed Description of the Invention] [Summary] Regarding a high dielectric film, a method for forming the same, and a liquid crystal display panel using the high dielectric film, the present invention relates to a high dielectric film having a high dielectric constant and a liquid crystal alignment function. The purpose of the present invention is to reduce the influence of the film thickness distribution of the alignment film on the threshold voltage and to reduce display unevenness by using the film, its formation method, and its highly dielectric film as the alignment film of a liquid crystal display panel. , a high dielectric film is formed by mixing a polyimide polymer material with ceramics having a higher dielectric constant than the polymer material.
またポリイミド系高分子材料と該高分子材料よりも高誘
電率なセラミックスとを、真空蒸着法、スパッタ法等の
薄膜形成法により混合した状態に成膜して、ポリイミド
系高分子膜中に前記セラミックスを混入した高誘電性膜
を形成する構成とする。Alternatively, a polyimide polymer material and a ceramic having a higher dielectric constant than the polymer material are mixed and formed into a film by a thin film forming method such as vacuum evaporation or sputtering, and the The structure is such that a highly dielectric film containing ceramics is formed.
更にポリイミド系高分子材料に該ポリイミド系高分子材
料よりも高誘電率なセラミックス粉末を混合し、その混
合した複合材料を厚膜形成法により成膜して高誘電性膜
を形成する構成とする。Further, a ceramic powder having a higher dielectric constant than the polyimide polymer material is mixed with the polyimide polymer material, and the mixed composite material is formed into a film by a thick film forming method to form a highly dielectric film. .
更に、それぞれ内面に液晶の配向規制を行う配向膜で覆
われた表示用の透明電極を備えた一対の基板を、液晶を
挟んで対向配置した構成の液晶表示パネルにおいて、前
記配向膜を、ポリイミド系高分子膜中に前記セラミック
スを混入した高誘電性膜、または咳高誘電性薄膜と、そ
の上に積層したポリイミド系高分子薄膜との二層膜構造
により構成する。Furthermore, in a liquid crystal display panel having a structure in which a pair of substrates each having a transparent electrode for display covered with an alignment film for controlling the alignment of liquid crystal on the inner surface are arranged facing each other with the liquid crystal in between, the alignment film is made of polyimide. It has a two-layer film structure consisting of a highly dielectric film in which the ceramics are mixed into a polymer film, or a thin film with high dielectric properties, and a thin polyimide polymer film laminated thereon.
本発明は、高誘電性膜及びその形成方法並びにその高誘
電性膜を、液晶の配向を規制する配向膜として用いた液
晶表示パネルに関するものである。The present invention relates to a highly dielectric film, a method for forming the same, and a liquid crystal display panel using the highly dielectric film as an alignment film that regulates the alignment of liquid crystals.
各種表示装置、或いは表示部を有する入出力装置等に用
いられる液晶表示パネル、特に近来、実用化の盛んな大
面積で、かつ高精細な表示を行うS T N (Sup
er Tivisted Nen+atic)型の液晶
表示パネルにおいては、液晶の配向規制力が高い配向膜
を用いて表示品質を均一化することが大きな課題となっ
ている。Liquid crystal display panels used in various display devices or input/output devices with display sections, especially STN (Sup
In liquid crystal display panels of the er Tivisted Nen+atic) type, it is a major challenge to make the display quality uniform by using an alignment film that has a high ability to regulate the alignment of liquid crystals.
従来の液晶表示パネルは第7図に示すように、一対のガ
ラス基板1.2の内面にそれぞれ表示用透明電極3.4
と、該透明電極3,4上に液晶を配向規制するポリイミ
ド系高分子材からなる配向膜5.6が被覆された状態に
配設され、かつその配向膜5,6の表面にはラビング処
理が施されている。そして上記した構成の一対のガラス
基板lと2は該基板間の間隔を規制するスペーサ7を介
し、かつ液晶8を挟んで対向配置した構成とされている
。As shown in FIG. 7, a conventional liquid crystal display panel has transparent display electrodes 3.4 on the inner surfaces of a pair of glass substrates 1.2, respectively.
The transparent electrodes 3 and 4 are coated with an alignment film 5.6 made of a polyimide polymer material that regulates the alignment of the liquid crystal, and the surfaces of the alignment films 5 and 6 are subjected to a rubbing treatment. is applied. The pair of glass substrates 1 and 2 having the above-described structure are arranged to face each other with a liquid crystal 8 interposed therebetween, with a spacer 7 regulating the distance between the substrates interposed therebetween.
なお、上記した配向膜5(6)は、スピンコード法、或
いは印刷法等により、前記透明電極3(4)が配設され
たガラス基板1(2)上にポリイミド前駆体溶液、即ち
ポリアミック酸溶液を所定の膜厚に均一に塗布し、その
塗布膜をクリーン・オーフン、またはホットプレートに
より180〜250°Cに均一に加熱・焼成することに
より、ポリイミドからなる配向膜を形成している。The above-mentioned alignment film 5 (6) is formed by applying a polyimide precursor solution, that is, polyamic acid, onto the glass substrate 1 (2) on which the transparent electrode 3 (4) is disposed, by a spin code method, a printing method, or the like. An alignment film made of polyimide is formed by uniformly applying a solution to a predetermined film thickness and uniformly heating and baking the applied film at 180 to 250°C using a clean oven or a hot plate.
上述のような形成方法によって、例えば10インチの大
きさのガラス基板上にポリイミドからなる配向膜を形成
した場合、その膜厚のバラツキは10%程度に抑えられ
ている。When an alignment film made of polyimide is formed on, for example, a 10-inch glass substrate by the above-described formation method, the variation in film thickness is suppressed to about 10%.
〔発明が解決しようとする課題]
ところで高精細の液晶パネルにおける電圧−透過率特性
は、電圧の変化に対する透過率の変化が急峻であること
が要求される。[Problems to be Solved by the Invention] Incidentally, the voltage-transmittance characteristic of a high-definition liquid crystal panel is required to have a steep change in transmittance with respect to a change in voltage.
しかし、従来の高精細な液晶パネルでは、そのような電
圧の僅かな変化に対して透過率が大きく変化することか
ら、液晶に実効的にかかる電圧がばらつくことにより透
過率が急峻に変化するしきい値もばらつき、このしきい
値のばらつきに起因して表示むらが生しる問題がある。However, in conventional high-definition LCD panels, the transmittance changes greatly in response to such small changes in voltage, so the transmittance changes sharply due to variations in the effective voltage applied to the liquid crystal. The threshold value also varies, and there is a problem in that display unevenness occurs due to the variation in the threshold value.
従来のポリイミド配向膜5(6)の誘電率εは3.0〜
3.5程度と小さいため、該配向膜5(6)での電圧降
下が生じ、またその配向膜5(6)の膜厚分布がしきい
値のバラツキの原因となっていた。The dielectric constant ε of the conventional polyimide alignment film 5 (6) is 3.0~
Since it is as small as about 3.5, a voltage drop occurs in the alignment film 5 (6), and the film thickness distribution of the alignment film 5 (6) causes variations in the threshold value.
しきい値のバラツキを小さくする方策としては、配向膜
の膜厚変動の低減、高誘電率化により電圧降下を減少さ
せることが考えられるが、かねてより用いられているス
ピンコード法、或いは印刷法等の配向膜形成法では、膜
厚の均一化に限界がある。Possible measures to reduce the variation in the threshold value include reducing voltage drop by reducing variation in the thickness of the alignment film and increasing the dielectric constant, but the spin code method or printing method that has been used for some time There is a limit to the uniformity of the film thickness in the alignment film forming methods such as the above.
そこで高誘電率の配向膜を用いて、膜厚分布の影響を少
なくするため、有機高分子材料で誘電率が10以上と大
きい、ポリ弗化ビニリデンや弗化ビニリデンとトリフル
オロエチレンの共重合体などの強誘電ポリマーを配向膜
として適用することも考えられるが、該強誘電ポリマー
は配向膜本来の役割である液晶分子を配列させる機能の
点が不十分であり、そのままでは実用に供することがで
きないといった難点があった。Therefore, in order to reduce the influence of the film thickness distribution by using an alignment film with a high dielectric constant, polyvinylidene fluoride or a copolymer of vinylidene fluoride and trifluoroethylene, which is an organic polymer material and has a high dielectric constant of 10 or more, is used. It is conceivable to use ferroelectric polymers such as ferroelectric polymers as alignment films, but these ferroelectric polymers are insufficient in their ability to align liquid crystal molecules, which is the original role of alignment films, and cannot be put to practical use as is. The problem was that it couldn't be done.
本発明は上記した従来の問題点を解決するため、高い誘
電率を有し、かつ液晶配向機能を備えた高誘電性膜とそ
の形成方法並びにその高誘電性膜を液晶表示パネルの配
向膜に用いることにより、しきい値電圧に対する該配向
膜の膜厚分布の影響を低減して表示むらを減少した液晶
表示パネルとを提供することを目的とするものである。In order to solve the above-mentioned conventional problems, the present invention provides a high dielectric film having a high dielectric constant and a liquid crystal alignment function, a method for forming the same, and the use of the high dielectric film as an alignment film for a liquid crystal display panel. It is an object of the present invention to provide a liquid crystal display panel in which display unevenness is reduced by reducing the influence of the film thickness distribution of the alignment film on the threshold voltage.
本発明は上記した目的を達成するため、ポリイミド系高
分子材料に、咳高分子材料よりも高誘電率なセラミック
スを混入した高誘電性膜を構成する。In order to achieve the above-mentioned object, the present invention constitutes a highly dielectric film in which ceramics having a higher dielectric constant than the cough polymer material is mixed into a polyimide polymer material.
またポリイミド系高分子材料と咳高分子材料よりも高誘
電率なセラミックスとを、真空蒸着法、スパッタ法等の
薄膜形成法により混合した状態に成膜して、ポリイミド
系高分子膜中に前記セラミックスを混入した高誘電性膜
を形成する構成とする。In addition, a polyimide polymer material and a ceramic having a higher dielectric constant than the cough polymer material are mixed and formed into a film by a thin film forming method such as vacuum evaporation or sputtering, and the The structure is such that a highly dielectric film containing ceramics is formed.
更にポリイミド系高分子材料に該ポリイミド系高分子材
料よりも高誘電率なセラミックス粉末を混合し、その混
合した複合材料を厚膜形成法により成膜して高誘電性膜
を形成する構成とする。Further, a ceramic powder having a higher dielectric constant than the polyimide polymer material is mixed with the polyimide polymer material, and the mixed composite material is formed into a film by a thick film forming method to form a highly dielectric film. .
更に、それぞれ内面に液晶の配向規制を行う配向膜で覆
われた表示用の透明電極を備えた一対の基板を、液晶を
挟んで対向配置した構成の液晶表示パネルにおいて、前
記配向膜を、ポリイミド系高分子膜中に前記セラミック
スを混入した高誘電性膜、または該高誘電性薄膜と、そ
の−Fに積層したポリイミド系高分子薄膜との二層膜構
造により構成する。Furthermore, in a liquid crystal display panel having a structure in which a pair of substrates each having a transparent electrode for display covered with an alignment film for controlling the alignment of liquid crystal on the inner surface are arranged facing each other with the liquid crystal in between, the alignment film is made of polyimide. It is composed of a high dielectric film in which the ceramics are mixed into a polymer film, or a two-layer structure of the high dielectric thin film and a polyimide polymer thin film laminated on -F.
本発明ではポリイミド系高分子材料、即ちポリイミドに
、そのポリイミドよりも高い誘電率を有するA2□0.
〔ε:9.8] 、P ZT (ジルコン・チタン酸鉛
、Pb(Zr−Ti)03. ε:400以上〕、或
いはPLZT(ランタン・ジルコン・チタン酸鉛、 P
b(LaZr−Ti)(h、 e :450以上〕等
のセラミックスを20〜50体積%程度混合した膜を構
成することにより、誘電率εが5.0〜7.0からなり
、かつ液晶分子の配向機能を備えた高誘電性膜が得られ
る。In the present invention, A2□0.
[ε:9.8], PZT (zircon/lead titanate, Pb(Zr-Ti)03.ε:400 or more), or PLZT (lanthanum/zircon/lead titanate, P
By composing a film containing about 20 to 50 volume % of ceramics such as b (LaZr-Ti) (h, e: 450 or more), the dielectric constant ε is 5.0 to 7.0, and the liquid crystal molecules A highly dielectric film with an orientation function can be obtained.
また、このような高誘電性膜は、基板上にポリイミドの
構成成分と上記セラミックスとを真空蒸着法、またはス
パッタ法等により、該セラミックスが20〜50容量%
程度混合した状態に被着し、成膜する形成方法、或いは
ポリイミドの前駆体溶液(ポリアミック酸溶液)と上記
セラミックスの粉末を20〜50容量%程度混合し、こ
の混合した複合ペーストをスピンコード法、或いは印刷
法等により基板上に塗布し、この塗布膜を加熱焼成する
形成方法により容易に得ることができる。In addition, such a highly dielectric film can be obtained by depositing the polyimide constituents and the above-mentioned ceramic on a substrate by vacuum evaporation or sputtering, so that the ceramic is 20 to 50% by volume.
A formation method in which the polyimide precursor solution (polyamic acid solution) and the above ceramic powder are mixed at about 20 to 50% by volume and the mixed composite paste is formed by spin cording. Alternatively, it can be easily obtained by a forming method in which the coating film is coated on a substrate by a printing method or the like and the coated film is heated and baked.
更に、上記した形成方法により得られる高誘電性膜を液
晶表示パぶルの配向膜に通用することによって、該配向
膜の膜厚のばらつきにより影響するしきい値電圧の変動
を172以下に抑えることができ、また電圧降下が減少
するので、表示むらが著しく低減され、かつ駆動電圧を
下げた液晶表示パネルを得ることができる。Furthermore, by applying the high dielectric film obtained by the above-described formation method to the alignment film of the liquid crystal display panel, fluctuations in the threshold voltage affected by variations in the thickness of the alignment film can be suppressed to 172 or less. Furthermore, since the voltage drop is reduced, it is possible to obtain a liquid crystal display panel in which display unevenness is significantly reduced and driving voltage is lowered.
[実施例〕
以下図面を用いて本発明の実施例について詳細に説明す
る。[Examples] Examples of the present invention will be described in detail below with reference to the drawings.
第111Zは本発明に係る高誘電性膜とその形成方法の
第1実施例を共に説明するための蒸着装置の構成図であ
る。No. 111Z is a configuration diagram of a vapor deposition apparatus for explaining a first embodiment of a high dielectric film and a method for forming the same according to the present invention.
本実施例は、複数の蒸着源を用いた蒸着法の一種である
蒸着重合法により有機高分子材料とセラミックスとを基
板面に蒸着する方法であって、例えば図示のように蒸着
装置ll内にポリイミド系高分子材料、即ちポリイミド
の主成分である粉末状の二無水ピロメリット酸からなる
第1蒸着#12aと4.4′〜ジアミノシフニルからな
る第2蒸着源12b及び前記ポリイミドよりもmN率ε
の高いセラミックス、例えば粉末状のAfz03(誘電
率ε:9.8)からなる第3蒸着源12cとを設置し、
またこれら三つの蒸着源12a、 12b、 12cに
対向する基板支持体13にガラス基板14を配置する。This example describes a method of vapor depositing an organic polymer material and ceramics on a substrate surface by a vapor deposition polymerization method, which is a type of vapor deposition method using a plurality of vapor deposition sources. A polyimide-based polymer material, i.e., a first vapor deposition #12a made of powdered dianhydride pyromellitic acid, which is the main component of polyimide, and a second vapor deposition source 12b made of 4.4' to diaminosifnyl, and a mN rate ε higher than that of the polyimide.
A third evaporation source 12c made of a ceramic having a high temperature, for example, powdered Afz03 (dielectric constant ε: 9.8) is installed,
Further, a glass substrate 14 is placed on the substrate support 13 facing these three vapor deposition sources 12a, 12b, and 12c.
そしてかかる装置ll内を例えば8 X 10−6To
rr程度の真空度となるように排気した後、前記二無水
ピロメリット酸からなる第1蒸着源12aと4.4゛−
ジアミノシフニルからなる第2蒸着512bとをそれぞ
れ150±2°Cに加熱して蒸発させ、前記ガラス基板
14面に被着重合させると同時に、前記A2□03から
なる第3蒸着源12cを電子ビームの照射加熱により蒸
発させることにより前記被着重合面に順次被着混合され
る。For example, 8 x 10-6 To
After evacuation to a degree of vacuum of about rr, the first vapor deposition source 12a made of pyromellitic dianhydride and the
The second evaporation source 512b made of diaminosifnyl is heated to 150±2°C to evaporate, and is deposited and polymerized on the surface of the glass substrate 14. At the same time, the third evaporation source 12c made of A2□03 is irradiated with an electron beam. By evaporating it by irradiation and heating, it is sequentially deposited and mixed on the deposited and polymerized surface.
この時、前記Alzo3からなる第3蒸着源12cの原
発速度を制御することにより、ポリイミド重合膜中に5
0体積%のA f 20.微粒子が分散混合された誘電
率εが5.0で、かつ液晶分子の配向機能を有するセラ
ミック有機高分子複合体からなる高誘電性薄膜を形成す
ることができる。At this time, by controlling the nuclear power generation rate of the third vapor deposition source 12c made of Alzo3, 5 is added to the polyimide polymer film.
0 volume % A f 20. It is possible to form a highly dielectric thin film made of a ceramic-organic polymer composite in which fine particles are dispersed and mixed and have a dielectric constant ε of 5.0 and have a function of aligning liquid crystal molecules.
なお、前記圧つの仄着源12a、 12b、 12cを
同時に蒸発させる方法の他に、二無水ビロメリント酸及
び4.4”−ジアミノシフニルからなる二つの芸着源1
2a、12bとA 1. zo3からなる蒸着源12c
とを交互に原発させて、対向するガラス基板14面に被
着重合させるようにしてもよく、上記の方法と同様なセ
ラミンク有機高分子複合体からなる高誘電性薄膜を形成
することができる。In addition to the method of simultaneously evaporating the two adhesion sources 12a, 12b, and 12c, two adhesion sources 1 consisting of biromellitic dianhydride and 4.4''-diaminosifnyl may be used.
2a, 12b and A 1. Vapor deposition source 12c made of zo3
Alternatively, the ceramic organic polymer composite may be deposited and polymerized on the opposing glass substrate 14 surface by alternating with the oxidation process, and a highly dielectric thin film made of the ceramic organic polymer composite can be formed in the same manner as in the above method.
また、第2図は本発明に係る高誘電性膜の形成方法の第
2実施例を説明するためのスパッタ装置の構成図である
。Further, FIG. 2 is a configuration diagram of a sputtering apparatus for explaining a second embodiment of the method for forming a highly dielectric film according to the present invention.
本実施例では、スパッタ装置の反応室21内の一部にポ
リイミドの主成分である例えば二無水ピロメリット酸と
4,4゛−ジアミノシフニルの二つのポリマー原発源2
2を収容する。In this embodiment, two polymer sources 2, which are the main components of polyimide, for example, dianhydride pyromellitic acid and 4,4゛-diaminosifnyl, are placed in a part of the reaction chamber 21 of the sputtering apparatus.
Accommodates 2.
ターゲット電極23には、例えばPLZT(ランタン・
ジルコン・チタン酸鉛[Pb(La−Zr−Ti)Oi
誘電率ε:450以上]からなる強誘電性のセラミック
スターゲット24と、該セラミックスターゲット24と
対向する基板支持体25にガラス基板26を配置し、か
かる反応室21内を一旦、高真空に一端排気した後、ア
ルゴン(Ar)ガスをlOn+Torrのガス圧となる
ように導入する。The target electrode 23 is made of, for example, PLZT (lanthanum).
Zircon lead titanate [Pb(La-Zr-Ti)Oi
A ferroelectric ceramic target 24 having a dielectric constant ε: 450 or more] and a glass substrate 26 are placed on a substrate support 25 facing the ceramic target 24, and the inside of the reaction chamber 21 is once evacuated to a high vacuum. After that, argon (Ar) gas is introduced to a gas pressure of lOn+Torr.
そして前記ポリマー蒸発622を加熱蒸発、若しくは該
ポリマーをガス状にしてガラス基板26側へ供給して前
記ガラス基板26面に被着重合させると同時に、前記セ
ラミックスターゲット24に2.0〜2.2W/cm”
の高周波電力を供給して前記セラミ。Then, the polymer 622 is heated and evaporated, or the polymer is made into a gas and is supplied to the glass substrate 26 side to be deposited and polymerized on the glass substrate 26 surface. /cm”
The ceramic is supplied with high frequency power.
クスターゲット24をスパッタさせ、ポリイミド重合膜
中に50体積%のPLZTからなるセラミックス微粒子
を分散混合した膜を被着することによって、誘電率εが
6.0程度で、かつ液晶分子の配向機能を有するセラミ
ック有機高分子複合体からなる高誘電性薄膜を形成する
ことができる。By sputtering the black target 24 and depositing a film in which ceramic fine particles made of 50% by volume of PLZT are dispersed and mixed in a polyimide polymer film, a film with a dielectric constant ε of about 6.0 and an alignment function for liquid crystal molecules is formed. It is possible to form a highly dielectric thin film made of a ceramic-organic polymer composite having the following properties.
更に、第3図は本発明に係る高誘電性膜の形成方法の第
3実施例を説明するだめのスパッタ装置の構成図である
。Furthermore, FIG. 3 is a block diagram of a sputtering apparatus for explaining a third embodiment of the method for forming a highly dielectric film according to the present invention.
本実施例が第2図による実施例と異なる点は、スパッタ
glの反応室31内の二つのターゲット電極32.33
に、図示のように重合済みのポリイミトターゲソト34
と、該ポリイミドよりも誘電率εの高い、例えばPLZ
TC誘電率ε:450以上〕からなるセラミックスター
ゲット35とをそれぞれ配置すると共に、その両ターゲ
7 ト34.35と対向する基板支持体36に複数枚の
ガラス基板37.38を配置し、かつこれらのガラス基
板37.38を基板支持体36と共に、回転モーター3
9により回転させた状態で、前記ポリイミドターゲント
34とPLZTからなるセラミックスターゲット35と
に同時に高周波電力を供給してスパッタを行い、ポリイ
ミド中にPLZTからなるセラミックス微粒子を分散混
合した膜を被着する方法である。This embodiment differs from the embodiment shown in FIG.
As shown in the figure, polymerized polyimide target material 34
and, for example, PLZ, which has a higher dielectric constant ε than the polyimide.
A plurality of glass substrates 37, 38 are arranged on the substrate support 36 facing both the targets 34, 35, and The glass substrates 37 and 38 of the rotary motor 3 together with the substrate support 36
9, high-frequency power is simultaneously supplied to the polyimide target 34 and the ceramic target 35 made of PLZT to perform sputtering, thereby depositing a film in which ceramic fine particles made of PLZT are dispersed and mixed in polyimide. It's a method.
この実施例の方法により、セラミックスのスパッタ量を
制御して前記ガラス基板37.38面にポリイミド中に
20体積%のPLZTからなるセラミンクス微粒子を分
散混合した膜を被着した場合、誘電率εが6.0程度で
、かつ液晶分子の配向機能を有するセラミック有機高分
子複合体からなる高誘電性薄膜を形成することができる
。By the method of this example, when a film in which ceramic fine particles made of 20% by volume of PLZT are dispersed and mixed in polyimide is deposited on the glass substrate 37 and 38 surfaces by controlling the amount of sputtering of the ceramic, the dielectric constant ε is 6.0, and it is possible to form a highly dielectric thin film made of a ceramic organic polymer composite having a function of aligning liquid crystal molecules.
更に、第4図は本発明に係る高誘電性膜の形成方法の第
4実施例を説明するためのスパッタ装置の構成図である
。Furthermore, FIG. 4 is a configuration diagram of a sputtering apparatus for explaining a fourth embodiment of the method for forming a highly dielectric film according to the present invention.
本実施例が第2図による実施例と異なる点は、スパッタ
装置の反応室41内の単数のターゲット電極42に、ポ
リイミドと該ポリイミドよりも誘電率の高いセラミック
ス材料、例えばA1.ZO3,PZTPLZTの他に、
チタン酸バリウム、チタン酸鉛等のセラミックスの適量
を混合一体化した混合ターゲット43を設置すると共に
、該混合ターゲ・ント43と対向する基板支持体44に
ガラス基板45を配置し、この混合ターゲット43に所
定の高周波電力を供給してスパッタを行い、ポリイミド
中に前記セラミックス微粒子が分散混合された膜を被着
する方法である。This embodiment differs from the embodiment shown in FIG. 2 in that the single target electrode 42 in the reaction chamber 41 of the sputtering apparatus is made of polyimide and a ceramic material having a higher dielectric constant than the polyimide, such as A1. In addition to ZO3, PZTPLZT,
A mixed target 43 in which appropriate amounts of ceramics such as barium titanate and lead titanate are mixed and integrated is installed, and a glass substrate 45 is placed on a substrate support 44 facing the mixed target 43. In this method, sputtering is performed by supplying a predetermined high-frequency power to the polyimide, thereby depositing a film in which the ceramic fine particles are dispersed and mixed in polyimide.
この実施例の方法によっても前記第2図及び第3図によ
る実施例と同様に、誘電率εが6.0程魔で、かつ液晶
分子の配向機能を有するセラミック有機高分子複合体か
らなる高誘電性薄膜を形成することができる。Similar to the embodiments shown in FIGS. 2 and 3, the method of this embodiment also produces a polymer made of a ceramic-organic polymer composite having a dielectric constant ε of about 6.0 and having a function of aligning liquid crystal molecules. Dielectric thin films can be formed.
更に、本発明に係る高誘電性膜の形成方法の第5実施例
としては、ポリイミド前駆体溶液、例えばポリアミック
酸溶液(日産科学製:サンエハー610)に、平均粒径
が0.05μIのチタン酸バリウム(BazTiOa)
からなるセラミックスの微粉末を20−t%混合し、こ
の混合ペーストをスピンコード法により該混合ペースト
の粘度及びスピン速度等を調整・制御してガラス基板上
に所定の膜厚となるように塗布した後、約250°Cで
焼成することによって誘電率εがポリイミドの約2.5
倍の7程度で、かつ液晶分子の配向機能を有するセラミ
ック有機高分子複合体からなる高誘電性膜を形成するこ
とができる。Furthermore, as a fifth example of the method for forming a highly dielectric film according to the present invention, titanic acid having an average particle size of 0.05 μI is added to a polyimide precursor solution, for example, a polyamic acid solution (Sun Eher 610, manufactured by Nissan Kagaku). Barium (BazTiOa)
20-t% of fine ceramic powder is mixed, and this mixed paste is coated on a glass substrate to a predetermined film thickness by adjusting and controlling the viscosity, spin speed, etc. of the mixed paste using a spin code method. After that, by baking at about 250°C, the dielectric constant ε is about 2.5 of that of polyimide.
It is possible to form a highly dielectric film made of a ceramic-organic polymer composite having a function of aligning liquid crystal molecules with approximately 7 times as much dielectric strength.
なお、上記セラミックス材料として、チタン酸バリウム
(BazTi04)の他に、チタン酸鉛(PbTiO+
) 。In addition to barium titanate (BazTi04), lead titanate (PbTiO+
).
チタン酸ストロンチウム(SrTiO:+) 、ニオブ
酸鉛(PbNb03)、PZT、PLZTなどに代表さ
れる強誘電性セラミックスを用いることができる。Ferroelectric ceramics such as strontium titanate (SrTiO:+), lead niobate (PbNb03), PZT, and PLZT can be used.
第5図は本発明に係るセラミック高分子複合体からなる
高誘電性膜を配向膜として用いた液晶表示パネルの一実
施例を説明するだめの構成図である。FIG. 5 is a structural diagram for explaining one embodiment of a liquid crystal display panel using a highly dielectric film made of a ceramic polymer composite according to the present invention as an alignment film.
図において、51&び52は内面に表示用透明電極53
及び54が形成された一対のガラス基板であり、その各
ガラス基板5152に設けた透明電極53及び54上に
、例えばポリイミドの主成分である二無水ピロメリット
酸と4.4°−ジアミノシフニルの二つのポリマーとP
LZT[ランタン・ジルコン・チタン酸鉛(Pb(La
−Zr−Ti)03.誘電率ε:450以上〕からなる
高誘電性のセラミックスとを同時にスパッタさせて、ポ
リイミド重合膜中に50体積%のPLZTからなるセラ
ミックス微粒子が分散混合したセラミック有機高分子複
合体の膜を形成する前記第3図により説明した第3実施
例の形成方法によって高誘電性薄膜からなるtooo人
の膜厚の配向膜55.56を設ける。In the figure, 51 & 52 are transparent electrodes 53 for display on the inner surface.
and 54 are formed, and on the transparent electrodes 53 and 54 provided on each glass substrate 5152, for example, dianhydride pyromellitic acid and 4.4°-diaminosifnyl dianhydride, which are the main components of polyimide, are formed. two polymers and P
LZT [lanthanum zircon lead titanate (Pb(La
-Zr-Ti)03. A highly dielectric ceramic having a dielectric constant ε: 450 or more] is simultaneously sputtered to form a ceramic organic polymer composite film in which 50% by volume of ceramic particles made of PLZT are dispersed and mixed in a polyimide polymer film. Alignment films 55 and 56 having a thickness of 100 mm and made of a highly dielectric thin film are provided by the formation method of the third embodiment described above with reference to FIG.
またはポリイミド前駆体溶液であるポリアミック酸溶液
に、チタン酸バリウム(BazTiOa)からなるセラ
ミックスの微粉末を20−t%混合し、この混合ペース
トをスピンコード法により塗布した後、約250°Cで
焼成して、ポリイミド中にBa、TiO4からなるセラ
ミックス微粒子を20し%だけ分散混合したセラミンク
有機高分子複合体の膜を形成する前記第5実施例の形成
方法によって、高誘電性膜からなる600人の膜厚の配
向膜55.56を設ける。Alternatively, 20-t% of ceramic fine powder made of barium titanate (BazTiOa) is mixed into a polyamic acid solution, which is a polyimide precursor solution, and this mixed paste is applied by a spin cord method, and then fired at approximately 250°C. Then, by the method of forming a ceramic organic polymer composite film in which 20% of ceramic particles made of Ba and TiO4 are dispersed and mixed in polyimide, a 600-layer film made of a highly dielectric film was formed by the formation method of the fifth embodiment. An alignment film 55,56 having a thickness of .
そしてその各配向膜55.56をラビング処理した後、
かかるガラス基板5152はスペーサ57を介して貼り
合わされ、該スペーサ57により規制された空隙に液晶
58が充填されたパネル構成としている。After rubbing each of the alignment films 55 and 56,
The glass substrates 5152 are bonded together with a spacer 57 interposed therebetween, and a panel structure is formed in which a gap regulated by the spacer 57 is filled with liquid crystal 58.
このような構成の液晶表示パネルにあっては、配向膜5
5.56として、従来より配向膜に用いられていたポリ
イミドをヘースにして、これに誘電率の高いセラミック
スを混合しているため、液晶分子の配向機能を有し、か
つ誘電率εがポリイミドの約2.0〜2.5倍の6〜7
程度に高めることができるので、該配向膜55.56の
膜厚のばらつきによるしきい値電圧の変動が172以下
に抑えられ、また電圧降下が減少するので、表示むらが
著しく低減される。In a liquid crystal display panel having such a configuration, the alignment film 5
5.56, polyimide, which has traditionally been used for alignment films, is used as a base material, and ceramics with a high dielectric constant are mixed with it, so it has the function of aligning liquid crystal molecules, and the dielectric constant ε is higher than that of polyimide. Approximately 2.0 to 2.5 times 6 to 7
Therefore, fluctuations in the threshold voltage due to variations in the film thickness of the alignment films 55, 56 can be suppressed to 172 or less, and since the voltage drop is reduced, display unevenness is significantly reduced.
なお、ポリイミド中にセラミ・ンクス微粉末を分散混合
した塗膜を焼成して形成したセラミ・ンク有機高分子複
合体の高誘電性膜からなる配向膜の表面は相対的に微小
な凹凸面となり易いので、焼成後にダイヤモンドペース
ト等を用いた研磨仕上処理により平滑化するようにして
も良い。Note that the surface of the alignment film, which is made of a highly dielectric film of a ceramic-ink organic polymer composite formed by firing a coating film in which ceramic-ink fine powder is dispersed and mixed in polyimide, has relatively small irregularities. Since it is easy to do so, it may be smoothed by polishing using diamond paste or the like after firing.
また、第6図は本発明に係るセラミ・ンク高分子複合体
からなる高誘電性膜を配向膜として用いた液晶表示パネ
ルの他の実施例を説明するための構成図であり、第5図
と同等部分には同一符号を付している。Furthermore, FIG. 6 is a configuration diagram for explaining another embodiment of a liquid crystal display panel using a highly dielectric film made of a ceramic-ink polymer composite according to the present invention as an alignment film, and FIG. The same parts are given the same symbols.
この図で示す実施例が第5図の例と異なる点は、各ガラ
ス基板51.52に設けた表示用透明電極53及び54
上に設けた配向膜61として、例えばポリイミド中に2
014 t%のBazTi04等からなるセラミ・ンク
ス微粒子を分散混合したセラミック有機高分子複合体か
らなる600人の膜厚の高誘電性薄膜62と、その上に
液晶分子の配向機能を有するポリイミド系高分子薄膜、
例えば100人の膜厚のポリイミド薄膜63を積層した
二層膜構造としたことである。The difference between the embodiment shown in this figure and the example shown in FIG. 5 is that transparent display electrodes 53 and 54 provided on each glass substrate 51,
As the alignment film 61 provided above, for example, 2
A highly dielectric thin film 62 with a thickness of 600 mm is made of a ceramic organic polymer composite in which ceramic particles made of BazTi04 etc. of 014 t% are dispersed, and a polyimide-based polymer having a liquid crystal molecule alignment function is placed on top of it. molecular thin film,
For example, it has a two-layer structure in which polyimide thin films 63 having a thickness of 100 layers are laminated.
この実施例構成によっても前記第5図による実施例構成
と同様な効果が得られると共に、前記配向膜61の表面
平滑度の向上と液晶分子の配向力か強められる。This embodiment also provides the same effects as the embodiment shown in FIG. 5, and also improves the surface smoothness of the alignment film 61 and strengthens the alignment force of liquid crystal molecules.
以上の説明から明らかなように、本発明に係る高誘電性
膜とその形成方法によれば、ポリイミド系高分子膜に該
ポリイミド系高分子膜よりも誘電率の高いセラミックス
を分散・混合した複合薄膜とすることにより、液晶分子
の配向機能を有し、かつ誘電率の高い高誘電性膜が容易
に得られる。As is clear from the above description, according to the high dielectric film and the method for forming the same according to the present invention, a composite film in which a polyimide polymer film is dispersed and mixed with a ceramic having a higher dielectric constant than the polyimide polymer film. By forming a thin film, a highly dielectric film having a function of aligning liquid crystal molecules and having a high dielectric constant can be easily obtained.
また、かかる高誘電性膜を液晶表示パネルの配向膜とし
て用いることにより、しきい値電圧に対する配向膜の膜
厚分布の影響を著しく少なくすることができ、表示ムラ
の極めて少ない低駆動電圧の液晶表示パネルを実現する
ことが可能となる優れた利点を有する。In addition, by using such a high dielectric film as an alignment film of a liquid crystal display panel, the influence of the film thickness distribution of the alignment film on the threshold voltage can be significantly reduced, resulting in a low drive voltage liquid crystal display with extremely low display unevenness. It has an excellent advantage of making it possible to realize a display panel.
従って、高精細な表示を行うTN型、或いはSTN型の
液晶表示パネルに適用して極めて有利である。Therefore, it is extremely advantageous to apply it to a TN type or STN type liquid crystal display panel that provides high-definition display.
第1図は本発明に係る高誘電性薄膜とその形成方法の第
1実施例を共に説明するため
の蒸着装置の構成図、
第2図は本発明に係る形成方法の第2実施例を説明する
ためのスパッタ装置の構成図、第3図は本発明に係る形
成方法の第3実施例を説明するためのスパッタ装置の構
成図、第4図は本発明に係る形成方法の第4実施例を説
明するためのスパッタ装置の構成図、第5図は本発明に
係る高誘電性膜を配向膜として用いた液晶表示パネルの
一実施例を
示す構成図、
第6図は本発明に係る高誘電性薄膜を配向膜ととして用
いた液晶表示パネルの他の実
施例を示す構成図、
第7回は従来の液晶表示パネルを説明するための構成図
である。
第1図〜第6図において、
11は蒸着装置、12aは第1蒸着源、12bは第2蒸
着源、12cは第3蒸着源、13,2536.44は基
板支持体、14.26,37,38,45.5152は
ガラス基板、2L31.41は反応室、22はポリマー
蒸発源、23.32,33.42はクーゲット電極、2
4.35はセラミックスターゲット、34はポリイミド
ターゲット、39は回転モーター、43は混合ターゲッ
ト、53、54は透明電極、55.56は配向膜、57
はスペーサ、58は液晶、61νま二層膜構造の配向膜
、62は高誘電性薄膜、63はポリイミド薄膜をそれぞ
れ示す。
→動水
第5図
シタ和水
第
図
第7凶FIG. 1 is a configuration diagram of a vapor deposition apparatus for explaining a first embodiment of a highly dielectric thin film and a method for forming the same according to the present invention, and FIG. 2 illustrates a second embodiment of a method for forming the same according to the present invention. FIG. 3 is a block diagram of a sputtering apparatus for explaining a third embodiment of the forming method according to the present invention, and FIG. 4 is a fourth embodiment of the forming method according to the present invention. 5 is a block diagram showing an embodiment of a liquid crystal display panel using the high dielectric film according to the present invention as an alignment film. FIG. A configuration diagram showing another embodiment of a liquid crystal display panel using a dielectric thin film as an alignment film.The seventh issue is a configuration diagram for explaining a conventional liquid crystal display panel. 1 to 6, 11 is a vapor deposition device, 12a is a first vapor deposition source, 12b is a second vapor deposition source, 12c is a third vapor deposition source, 13,2536.44 is a substrate support, 14,26,37 , 38, 45.5152 is a glass substrate, 2L31.41 is a reaction chamber, 22 is a polymer evaporation source, 23.32, 33.42 is a Kugett electrode, 2
4.35 is a ceramic target, 34 is a polyimide target, 39 is a rotating motor, 43 is a mixed target, 53 and 54 are transparent electrodes, 55.56 is an alignment film, 57
58 is a spacer, 58 is a liquid crystal, 61v is an alignment film having a two-layer structure, 62 is a highly dielectric thin film, and 63 is a polyimide thin film. →Water water diagram No. 5 Shita Wa water diagram No. 7
Claims (6)
高誘電率なセラミックスを混入してなることを特徴とす
る高誘電性膜。(1) A high dielectric film characterized by being formed by mixing a polyimide polymer material with a ceramic having a higher dielectric constant than the polymer material.
高誘電率なセラミックスとを薄膜形成法により混合した
状態に成膜して、ポリイミド系高分子膜中に前記セラミ
ックスを混入した高誘電性膜を形成するようにしたこと
を特徴とする高誘電性膜の形成方法。(2) A film with a mixture of a polyimide polymer material and a ceramic having a higher dielectric constant than the polymer material is formed using a thin film formation method, and the ceramic is mixed into the polyimide polymer film. 1. A method for forming a highly dielectric film, characterized in that a high dielectric film is formed.
法であることを特徴とする請求項2記載の高誘電性膜の
形成方法。(3) The method for forming a highly dielectric film according to claim 2, wherein the thin film forming method is a vacuum evaporation method or a sputtering method.
材料よりも高誘電率なセラミックス粉末を混合し、その
混合した複合材料を厚膜形成法により高誘電性膜を形成
するようにしたことを特徴とする高誘電性膜の形成方法
。(4) A ceramic powder having a higher dielectric constant than the polyimide polymer material is mixed with the polyimide polymer material, and the mixed composite material is formed into a high dielectric film by a thick film forming method. Characteristic method for forming highly dielectric films.
向膜(55、56)で覆われた表示用の透明電極(53
、54)を備えた一対の基板を、液晶を挟んで対向配置
した構成の液晶表示パネルにおいて、 前記配向膜(55、56)が、請求項2、または3記載
の形成方法により得られる高誘電性膜からなることを特
徴とする液晶表示パネル。(5) Transparent electrodes for display (53) each covered with an alignment film (55, 56) that regulates the alignment of the liquid crystal (58)
, 54) are arranged facing each other with a liquid crystal interposed therebetween, wherein the alignment film (55, 56) is a high dielectric film obtained by the formation method according to claim 2 or 3. A liquid crystal display panel characterized by being made of a transparent film.
の形成方法により得られる高誘電性膜薄膜(62)と、
その上に積層したポリイミド系高分子薄膜(63)との
二層膜構造からなることを特徴とする請求項5記載の液
晶表示パネル。(6) the alignment film (61) is a highly dielectric thin film (62) obtained by the formation method according to claim 2 or 3;
6. The liquid crystal display panel according to claim 5, characterized in that it has a two-layer structure with a polyimide polymer thin film (63) laminated thereon.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP18622090A JPH0470818A (en) | 1990-07-12 | 1990-07-12 | Highly dielectric film, formation thereof and liquid crystal display panel using the same |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP18622090A JPH0470818A (en) | 1990-07-12 | 1990-07-12 | Highly dielectric film, formation thereof and liquid crystal display panel using the same |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH0470818A true JPH0470818A (en) | 1992-03-05 |
Family
ID=16184473
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP18622090A Pending JPH0470818A (en) | 1990-07-12 | 1990-07-12 | Highly dielectric film, formation thereof and liquid crystal display panel using the same |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH0470818A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20020046137A (en) * | 2000-12-12 | 2002-06-20 | 사토 히로시 | EL Device and Preparation Method |
US7064412B2 (en) * | 2000-01-25 | 2006-06-20 | 3M Innovative Properties Company | Electronic package with integrated capacitor |
JP2008268309A (en) * | 2007-04-16 | 2008-11-06 | Tokyo Univ Of Science | Liquid crystal display element and material for alignment layer |
-
1990
- 1990-07-12 JP JP18622090A patent/JPH0470818A/en active Pending
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7064412B2 (en) * | 2000-01-25 | 2006-06-20 | 3M Innovative Properties Company | Electronic package with integrated capacitor |
KR20020046137A (en) * | 2000-12-12 | 2002-06-20 | 사토 히로시 | EL Device and Preparation Method |
JP2008268309A (en) * | 2007-04-16 | 2008-11-06 | Tokyo Univ Of Science | Liquid crystal display element and material for alignment layer |
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