JPH0462830A - Electron beam plotter and method for producing photo mask using it - Google Patents
Electron beam plotter and method for producing photo mask using itInfo
- Publication number
- JPH0462830A JPH0462830A JP2167133A JP16713390A JPH0462830A JP H0462830 A JPH0462830 A JP H0462830A JP 2167133 A JP2167133 A JP 2167133A JP 16713390 A JP16713390 A JP 16713390A JP H0462830 A JPH0462830 A JP H0462830A
- Authority
- JP
- Japan
- Prior art keywords
- electron beam
- time
- deflector
- shaping
- irradiation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 10
- 238000010894 electron beam technology Methods 0.000 title abstract description 32
- 238000007493 shaping process Methods 0.000 claims description 23
- 238000000609 electron-beam lithography Methods 0.000 claims description 13
- 238000000034 method Methods 0.000 claims description 5
- 230000001678 irradiating effect Effects 0.000 claims 3
- 230000006866 deterioration Effects 0.000 abstract description 7
- 238000010586 diagram Methods 0.000 description 8
- 230000000694 effects Effects 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 235000018185 Betula X alpestris Nutrition 0.000 description 1
- 235000018212 Betula X uliginosa Nutrition 0.000 description 1
- 241000255789 Bombyx mori Species 0.000 description 1
- 241000272201 Columbiformes Species 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 210000003205 muscle Anatomy 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000002966 varnish Substances 0.000 description 1
Landscapes
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Electron Beam Exposure (AREA)
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明は、半導体集積回路の分野において用いられるフ
ォトマスクの製造方法、及びフォトマスクを製造するた
めに用いられる電子ビーム描画装置に関するものである
。DETAILED DESCRIPTION OF THE INVENTION Field of Industrial Application The present invention relates to a method for manufacturing a photomask used in the field of semiconductor integrated circuits, and an electron beam lithography apparatus used for manufacturing the photomask.
従来の技術
近年、フォトマスクの製造において電子ビーム描画装置
が広（用いられるようになってきた。BACKGROUND OF THE INVENTION In recent years, electron beam lithography systems have become widely used in the production of photomasks.
第２図は、この電子ビーム描画装置の電子光学系を示す
図である。同図において、１は電子銃、２は照射レンズ
、３は第一整形アパーチャ、４は整形偏向器、５は整形
レンズ、６は第二整形アパ−チャ、７は縮小レンズ、８
は投影レンズ、９は位置決め偏向器、１ｏはマスク乾板
、１１は電子ビームである。FIG. 2 is a diagram showing the electron optical system of this electron beam drawing apparatus. In the figure, 1 is an electron gun, 2 is an irradiation lens, 3 is a first shaping aperture, 4 is a shaping deflector, 5 is a shaping lens, 6 is a second shaping aperture, 7 is a reduction lens, and 8
9 is a projection lens, 9 is a positioning deflector, 1o is a mask dry plate, and 11 is an electron beam.
電子銃１から放出した電子線を照射レンズ２で集束し第
一整形アパーチャ３に照射する。ここで矩形電子ビーム
が形成され、これを整形偏向器４と整形レンズ５により
第二整形アパーチャ６上の任意の位置に結像させる。こ
の結像位置を変えることで任意の大きさの矩形ビームを
得ることができる。この後、縮小レンズ７、投影レンズ
８によりマスク乾板１０上に結像される。このときに結
像される電子ビーム１１の位置は、位置決め偏向器９に
より決定される。An electron beam emitted from an electron gun 1 is focused by an irradiation lens 2 and irradiated onto a first shaping aperture 3. Here, a rectangular electron beam is formed, which is imaged at an arbitrary position on the second shaping aperture 6 by the shaping deflector 4 and the shaping lens 5. By changing this imaging position, a rectangular beam of any size can be obtained. Thereafter, an image is formed on a mask dry plate 10 by a reduction lens 7 and a projection lens 8. The position of the electron beam 11 imaged at this time is determined by the positioning deflector 9.
発明が解決しようとする課題
上記従来の可変整形ビーム形電子ビーム描画装置を用い
てフォトマスクを製造する場合には、微小なパターンで
は、ビームの寸法に比べてパターンのサイズが小さくな
る。このためにパターン寸法精度が劣化する。半導体集
積回路の素子寸法の微細化につれ、上記の寸法精度の劣
化が問題となっできている。Problems to be Solved by the Invention When a photomask is manufactured using the above-mentioned conventional variable shaped beam type electron beam lithography apparatus, the size of a minute pattern is smaller than the size of the beam. For this reason, pattern dimensional accuracy deteriorates. As the element dimensions of semiconductor integrated circuits become smaller, the above-mentioned deterioration of dimensional accuracy has become a problem.
本発明は、上記従来の問題点を解決するもので、微小パ
ターンにおける寸法精度の劣化を抑え、高精度なマスク
描画が可能な電子ビーム描画装置及び高精度なフォトマ
スクの製作が可能なフォトマスク製造方法を提供するこ
とを目的とする。The present invention solves the above-mentioned conventional problems, and includes an electron beam lithography device that suppresses deterioration of dimensional accuracy in minute patterns and can perform highly accurate mask writing, and a photomask that can manufacture highly accurate photomasks. The purpose is to provide a manufacturing method.
課題を解決するための手段
この目的を達成するために、本発明のフォトマスク製造
方法は、電子ビーム描画装置の描画時において、電子ビ
ームの照射位置を変化させ複数回描画する方法を用いて
いる。また、本発明の電子ビーム描画装置は、電子ビー
ムの照射位置を自動的に変化させ複数回描画する機構を
有している。Means for Solving the Problems In order to achieve this object, the photomask manufacturing method of the present invention uses a method of changing the irradiation position of the electron beam and performing writing multiple times during writing using an electron beam writing device. . Further, the electron beam writing apparatus of the present invention has a mechanism that automatically changes the irradiation position of the electron beam and performs writing multiple times.
作用
この方法及び構成によって、微小パターンにおける寸法
精度の劣化を抑えることができ、フォトマスクの精度を
向上させることができる。Effect: With this method and configuration, it is possible to suppress deterioration of dimensional accuracy in minute patterns and improve the accuracy of the photomask.
実施例
以下に、本発明の一実施例について図面を参照しながら
説明する。EXAMPLE An example of the present invention will be described below with reference to the drawings.
第１図は、本発明の一実施例による電子ビーム描画装置
の電子光学系を示す図である。同図において、１は電子
銃、２は照射レンズ、３は第一整形アパーチャ、４は整
形偏向器、５は整形レンズ、６は第二整形アパーチャ、
７は縮小レンズ、８は投影レンズ、９は位置決め偏向器
、１０はマスク乾板、１１は電子ビームであり、これら
の構成は従来の電子ビーム描画装置と同じである。また
、１２は位置決め偏向器制御回路部である。FIG. 1 is a diagram showing an electron optical system of an electron beam drawing apparatus according to an embodiment of the present invention. In the figure, 1 is an electron gun, 2 is an irradiation lens, 3 is a first shaping aperture, 4 is a shaping deflector, 5 is a shaping lens, 6 is a second shaping aperture,
7 is a reduction lens, 8 is a projection lens, 9 is a positioning deflector, 10 is a mask dry plate, and 11 is an electron beam, and these structures are the same as those of the conventional electron beam drawing apparatus. Further, 12 is a positioning deflector control circuit section.
以上のように構成された電子ビーム描画装置について、
以下にその動作を説明する。Regarding the electron beam lithography device configured as described above,
The operation will be explained below.
従来の描画において電子ビーム１１は、予め決められた
時間だけマスク乾板１０に照射されるが、本発明の電子
ビーム描画装置は、位置決め偏向器制御回路部１２によ
り、上記の設定時間よりも短い時間だけビームが照射さ
れる。このとき、目的の位置よりも照射されるビームの
短辺方向に、ある一定の微小量だけずれた位置にビーム
が照射される。この後に設定時間に不足した時間だけ、
目的の位置に電子ビームの照射が行われる。In conventional lithography, the electron beam 11 is irradiated onto the mask dry plate 10 for a predetermined time, but in the electron beam lithography apparatus of the present invention, the positioning deflector control circuit 12 irradiates the electron beam 11 for a period shorter than the set time. Only the beam is irradiated. At this time, the beam is irradiated to a position that is shifted by a certain minute amount from the target position in the short side direction of the irradiated beam. After this, for the time that is short of the set time,
The target position is irradiated with an electron beam.
このときの照射位置の変化量と、それぞれの電子ビーム
の照射時間はソフトウェアにより自由に設定可能である
。The amount of change in the irradiation position at this time and the irradiation time of each electron beam can be freely set by software.
第３図は、マスク乾板に電子ビームを照射した場合のビ
ーム径とマスク乾板上にできたマスクパターン径との相
関関係を示した図で、第３図Ａは、本発明による電子ビ
ーム描画装置を用いて、ビーム照射位置の変化量をビー
ムの短辺方向に＋０．１μｍ及び−０，１μｍとし、そ
れぞれの照射時間を総照射時間の３分の１、正常位置で
の照射時間を総照射時間の３分の１に設定して描画を行
った場合である。FIG. 3 is a diagram showing the correlation between the beam diameter when a mask dry plate is irradiated with an electron beam and the mask pattern diameter formed on the mask dry plate, and FIG. 3A is a diagram showing the electron beam drawing apparatus according to the present invention. Using , the amount of change in the beam irradiation position was set to +0.1 μm and -0.1 μm in the short side direction of the beam, each irradiation time was one-third of the total irradiation time, and the irradiation time at the normal position was This is a case where drawing is performed with the setting set to one-third of the time.
第３図Ｂは、従来の電子ビーム描画装置において、通常
どうりにビーム照射位置を変化させずに描画を行った場
合である。第３図を見れば明らかなように、本発明の電
子ビーム描画装置を用いれば、微小パターンにおける寸
法精度の劣化を抑えることができる。また、第３図Ｃは
、従来の電子ビーム描画装置を用いて、同じマスク乾板
に対して、Ｘ方向に−０，１μｍ、次にＸ方向に０．１
μｍ、次にＸ方向に−０，１μｍ、次にＸ方向に０．１
μｍだけ電子ビームの照射位置をずらして描画をした後
、正常の位置に描画を行った場合であり、それぞれのビ
ーム照射時間をすべて同しにして描画を行っている。こ
の場合は、同じマスク乾板に対して５回描画を行うよう
にあらかじめ設定しなければならないが、結果としては
、第３図Ａの本発明の電子ビーム描画装置を使用した場
合よりは劣るものの、第３図Ｂの従来の描画方法と比べ
ると、微小パターンにおける寸法精度の劣化を抑えるこ
とができている。FIG. 3B shows a case where drawing is performed without changing the beam irradiation position as usual in a conventional electron beam drawing apparatus. As is clear from FIG. 3, by using the electron beam lithography apparatus of the present invention, it is possible to suppress deterioration in dimensional accuracy in minute patterns. In addition, in FIG. 3C, using a conventional electron beam lithography system, the same mask dry plate is plotted by −0.1 μm in the X direction, then by 0.1 μm in the X direction.
μm, then -0.1 μm in the X direction, then 0.1 μm in the X direction
This is a case in which drawing is performed by shifting the irradiation position of the electron beam by μm, and then drawing is performed at the normal position, and the drawing is performed with each beam irradiation time being the same. In this case, it is necessary to set in advance that writing is performed five times on the same mask dry plate, but the result is inferior to that when using the electron beam writing apparatus of the present invention shown in FIG. 3A, but Compared to the conventional drawing method shown in FIG. 3B, it is possible to suppress deterioration in dimensional accuracy in minute patterns.
発明の効果
本発明によれば、電子ビームの描画時において、電子ビ
ームの照射位置を変化させることにより、微小パターン
の寸法精度の劣化を容易に抑えることができ、高精度な
マスク描画が可能な電子ビーム描画装置及び高精度なフ
ォトマスクの製造方法を実現できるものである。Effects of the Invention According to the present invention, by changing the irradiation position of the electron beam during electron beam drawing, it is possible to easily suppress deterioration of the dimensional accuracy of a minute pattern, and it is possible to perform highly accurate mask drawing. This makes it possible to realize an electron beam lithography apparatus and a highly accurate photomask manufacturing method.
第１図は本発明の一実施例の電子ビーム描画装置を示す
図、第２図は従来の電子ビーム描画装置を示す図、第３
図はビーム径とマスクパターン径との関係を示す図であ
る。
１・・・・・・電子銃、２・・・・・・照射レンズ、３
・・・・・・第一整形アパーチャ、４・・・・・・整形
偏向器、５・・・・・・整形レンズ、６・・・・・・第
二整形アパーチャ、７・・・・・・縮小レンズ、８・・
・・・・投影レンズ、９・・・・・・位置決め偏向器、
１０・・・・・・マスク乾板、１１・・・・・・電子ビ
ーム、１２・・・・・・位置決め偏向器制御回路部。
代理人の氏名 弁理士 粟野重孝 はか１名第１図
１・電子銃
２ ゛頚身１Ｌニス′。
Ｊ・・第１整丑ンアパーチ〒
号ε・・・瞥ｌチＮ―ｈ向鵠２
７−ｍノ１ル〉ズ′
ど・・・才便影しンス“′
り・・イ’ｆｒｊｉ ５丈ａう偏ｔり器７θ・・マスク
佐荻
１１・・・電子ビーム
１２・・・イ立Ｓ決め偏向Ｗｔｌ布ｐ回路部図
７ ↑Ｌ銑
２−ｐ系射し）又
３・・・第１整升〉アバー手ヤ
４・・整形偏向器
り・・整形しシス°′
６ 筋２整形？バーチγ
７°゛請鵠小 しシス゛
８ °°ｔノ形しシス゛
り・・・４ｉｒ直スめ偏向器
７θ°°マスク載抜
７１ 、′：Ｉ−ヒーム
ビー平４
ヒ゛ニムイをＯＡ”）
ピームイ蚕（ハ）FIG. 1 is a diagram showing an electron beam lithography system according to an embodiment of the present invention, FIG. 2 is a diagram showing a conventional electron beam lithography system, and FIG. 3 is a diagram showing a conventional electron beam lithography system.
The figure is a diagram showing the relationship between the beam diameter and the mask pattern diameter. 1...Electron gun, 2...Irradiation lens, 3
...First shaping aperture, 4...Shaping deflector, 5...Shaping lens, 6...Second shaping aperture, 7...・Reduction lens, 8...
...Projection lens, 9...Positioning deflector,
10...Mask dry plate, 11...Electron beam, 12...Positioning deflector control circuit section. Name of agent: Patent attorney Shigetaka Awano (1 person) Figure 1 1 Electron gun 2 ``Neck body 1L varnish''. J...1st aperture 〒No.ε...viewlchiN-hfacing鵠2 7-mノ1ru〉zu' d...saiben shadow"'ri...i'frji 5 Length deflector 7θ...Mask Sase 11...Electron beam 12...S-determining deflection Wtl cloth p circuit part Figure 7 ↑L pigeon 2-p system radiation) Also 3... 1st adjustment> Aber hand 4... shaping deflector... shaping system °' 6 muscle 2 shaping? birch γ 7° angle reduction system 8 °°t shaped system... 4ir Straight deflector 7θ°° mask loading and unloading 71,': I-Heambee 4 Hinimui OA'') Peamui Silkworm (c)
Claims (3)
する照射レンズと、前記照射レンズを通過した前記電子
を整形する整形偏向器と、前記整形偏向器で偏向された
前記電子を集光する整形レンズと、前記電子をマスク乾
板上に偏向させる位置決め偏向器を備え、前記位置決め
偏向器が位置決め偏向器制御回路部に接続されているこ
とを特徴とする電子ビーム描画装置。(1) An electron gun, an irradiation lens that condenses electrons emitted from the electron gun, a shaping deflector that shapes the electrons that have passed through the irradiation lens, and a shaping deflector that shapes the electrons that have been deflected by the shaping deflector. An electron beam lithography apparatus comprising a shaping lens for condensing light and a positioning deflector for deflecting the electrons onto a mask dry plate, the positioning deflector being connected to a positioning deflector control circuit.
記矩形ビームで所定位置を第１の露光量で照射する第２
の工程と、前記矩形ビームで所定位置より短辺方向に少
しずれた位置を前記第１の露光量で照射する第３の工程
と、前記矩形ビームで所定位置より短辺方向で前記第３
の工程と逆方向に少しずれた位置を前記第１の露光量で
照射する第４の工程を備え、前記第３、第４の所定位置
から少しずれた位置の距離が、前記矩形ビームの短辺の
長さより短いことを特徴とするフォトマスク製造方法。(2) A first step of forming a two-dimensional rectangular beam, and a second step of irradiating a predetermined position with the rectangular beam at a first exposure amount.
a third step of irradiating a position slightly shifted in the short side direction from the predetermined position with the first exposure amount using the rectangular beam;
a fourth step of irradiating a position slightly shifted in the opposite direction to the step with the first exposure amount, and the distance of the position slightly shifted from the third and fourth predetermined positions is equal to the short distance of the rectangular beam. A method for manufacturing a photomask, characterized in that the photomask is shorter than the length of the sides.
および第４の工程を少なくとも備えたことを特徴とする
フォトマスク製造方法。(3) In claim 2, the second and third
A photomask manufacturing method comprising at least a fourth step.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2167133A JPH0462830A (en) | 1990-06-25 | 1990-06-25 | Electron beam plotter and method for producing photo mask using it |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2167133A JPH0462830A (en) | 1990-06-25 | 1990-06-25 | Electron beam plotter and method for producing photo mask using it |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0462830A true JPH0462830A (en) | 1992-02-27 |
Family
ID=15844045
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2167133A Pending JPH0462830A (en) | 1990-06-25 | 1990-06-25 | Electron beam plotter and method for producing photo mask using it |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0462830A (en) |
-
1990
- 1990-06-25 JP JP2167133A patent/JPH0462830A/en active Pending
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